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1. 发明申请

US20050258483A1 Quasi-vertical power semiconductor device on a composite substrate 审中-公开
标题翻译：准垂直功率半导体器件在复合衬底上
公开(公告)号：US20050258483A1
公开(公告)日：2005-11-24
申请号：US10526641
申请日：2003-09-01
申请人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
发明人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
IPC分类号： H01L29/20 , H01L29/24 , H01L29/47 , H01L29/868 , H01L29/872 , H01L29/76
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/868
摘要： The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15). Means (16, 17) of electrically connecting the device are provided, firstly on the epitaxied semiconducting material, and secondly on the second face of the support substrate, an electrical connection through the electrically insulating layer and said electrically conducting means of the support substrate electrically connecting the epitaxied semiconducting material (14, 15) to the electrically connecting means (17) provided on the second face of the support substrate (11).
摘要翻译：本发明涉及由半导体材料制成的功率半导体器件，该半导体材料包括在层叠结构（10）上，包括转移到支撑衬底（11）的第一面上的半导体材料层（13），并通过一个电绝缘层（12），所述支撑衬底包括在所述第一面和第二面之间的导电装置，所述转移的半导体材料层（13）用作所述表面半导体材料（14,15）的外延支撑。提供电连接器件的装置（16,17），首先在表面半导体材料上，其次在支撑衬底的第二面上，通过电绝缘层和支撑衬底的所述导电装置的电连接电将所述表面半导体材料（14,15）连接到设置在所述支撑基板（11）的第二面上的所述电连接装置（17）。

2. 发明申请

US20060125057A1 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage 审中-公开
标题翻译：用于生产包含外延级的复合硅片型基材的方法
公开(公告)号：US20060125057A1
公开(公告)日：2006-06-15
申请号：US10526657
申请日：2003-09-01
申请人： Lea Di Cioccio , Francois Templier , Thierry Billon , Fabrice Letertre
发明人： Lea Di Cioccio , Francois Templier , Thierry Billon , Fabrice Letertre
IPC分类号： H01L31/0312 , H01L29/06
CPC分类号： H01L21/7602 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/2007
摘要： The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.
摘要翻译：本发明涉及一种SiCOI型复合衬底制造方法，包括以下步骤：提供包含Si或SiC载体（1）的初始衬底，所述Si或SiC载体（1）承载SiO 2层（2），其中SiC的薄层（3）被转移，在SiC的薄层（3）上SiC（4）的外延。如果载体（1）由SiC组成，则从1350°C开始，在1450℃的温度下进行外延生长，以在转移的薄6H或4H多型层（3）上分别获得6H或4H多型外延（4）如果载体（1）由Si或SiC由1350℃组成，则在转移的薄3C多型层（3）上获得3C多型外延（4），以获得6H或4H多型外延（4）如果载体（1）由Si组成，则分别转移薄的6H或4H多型层（3）。

3. 发明申请

US20050282358A1 Method for transferring an electrically active thin layer 审中-公开
标题翻译：传递电活性薄层的方法
公开(公告)号：US20050282358A1
公开(公告)日：2005-12-22
申请号：US10519406
申请日：2003-07-15
申请人： Lea Di Cioccio , Fabrice Letertre , Elsa Hugonnard-Bruyere
发明人： Lea Di Cioccio , Fabrice Letertre , Elsa Hugonnard-Bruyere
IPC分类号： C23C14/48 , H01L21/205 , H01L21/76 , H01L21/762 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/7602
摘要： A method for transferring an electrically active thin film from an initial substrate to a target substrate including: ion implantation through one face of the initial substrate to create a buried, embrittled film at a determined depth relative to the implanted face of the initial substrate, thus delimiting a thin film between the implanted face and the buried face; fastening the implanted face of the initial substrate with a face of the target substrate; separating the thin film from the remainder of the initial substrate at the level of the buried film; and thinning down the thin film transferred on the target substrate. The implantation dosage, energy, and current are chosen, during the ion implantation, so that concentration in implantation defects is less than a determined threshold, resulting in, within the thinned down thin film, a number of acceptor defects compatible with desired electrical properties of the thin film.
摘要翻译：一种用于将电活性薄膜从初始衬底转移到目标衬底的方法，包括：通过初始衬底的一个面的离子注入，以相对于初始衬底的注入面在确定的深度产生掩埋的脆化薄膜，因此在植入面和掩埋面之间限定薄膜; 用目标衬底的表面紧固初始衬底的植入面; 将所述薄膜与所述初始衬底的其余部分在所述掩埋膜的水平面分离; 并减薄转移到目标衬底上的薄膜。在离子注入期间选择注入剂量，能量和电流，使得植入缺陷中的浓度小于确定的阈值，导致在薄化的薄膜内的许多受体缺陷与期望的电性能薄膜。

4. 发明申请

US20120252162A1 METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS 有权
标题翻译：用于结合涉及退火工艺的半导体结构的方法以及使用这种方法形成的结合的半导体结构
公开(公告)号：US20120252162A1
公开(公告)日：2012-10-04
申请号：US13076840
申请日：2011-03-31
申请人： Mariam Sadaka , Ionut Radu , Didier Landru , Lea Di Cioccio
发明人： Mariam Sadaka , Ionut Radu , Didier Landru , Lea Di Cioccio
IPC分类号： H01L21/50
CPC分类号： H01L24/03 , H01L24/05 , H01L24/08 , H01L24/80 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03614 , H01L2224/03616 , H01L2224/0384 , H01L2224/03848 , H01L2224/0401 , H01L2224/05546 , H01L2224/05571 , H01L2224/05647 , H01L2224/08121 , H01L2224/08146 , H01L2224/8001 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/81948 , H01L2924/00014 , H01L2924/12042 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods.
摘要翻译：将半导体结构结合在一起的方法包括退火第一半导体结构上的第一金属特征，将第一金属特征结合到第二半导体结构的第二金属特征，以形成包含第一金属特征和第二金属特征，并对结合的金属结构进行退火。退火第一金属特征可以包括使第一金属特征经受预结合热预算，并且对接合的金属结构进行退火可以包括使结合的金属结构经受低于预粘合热预算的后粘合热预算。使用这种方法制造粘合的半导体结构。

5. 发明申请

US20120097296A1 METHOD FOR MODIFYING THE CRYSTALLINE STRUCTURE OF A COPPER ELEMENT 有权
标题翻译：一种修复铜元件结晶结构的方法
公开(公告)号：US20120097296A1
公开(公告)日：2012-04-26
申请号：US13380633
申请日：2010-07-01
申请人： Lea Di Cioccio , Pierric Gueguen , Maurice Rivoire
发明人： Lea Di Cioccio , Pierric Gueguen , Maurice Rivoire
IPC分类号： C22F1/08 , C23F1/00
CPC分类号： H01L21/76886 , H01L21/31053 , H01L21/321 , H01L21/3212 , H01L21/7684 , H01L21/76883
摘要： A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing.
摘要翻译：一种用于改变具有平坦表面的铜元件的晶体结构的方法，包括：a）制备具有大晶粒的铜标准，其中标准包括平面表面，b）将平坦表面的粗糙度减小到小于1的粗糙度 nm，c）清洁平面，d）使两个平面接触，e）退火。

6. 发明申请

US20080271835A1 Method for Relaxing a Stressed Thin Film 有权
标题翻译：松弛强化薄膜的方法
公开(公告)号：US20080271835A1
公开(公告)日：2008-11-06
申请号：US12158178
申请日：2006-12-26
申请人： Lea Di Cioccio , Damien Bordel , Genevieve Grenet , Philippe Regreny
发明人： Lea Di Cioccio , Damien Bordel , Genevieve Grenet , Philippe Regreny
IPC分类号： B32B7/04
CPC分类号： H01L21/76251 , H01L21/6835 , H01L2221/68359 , H01L2221/68368 , H01L2224/83894 , H01L2924/01079 , Y10S438/977
摘要： A method relaxing a strained thin film, secured via a first main face of an initial support, the second main face of the thin film being a contact face. The method supplies an intermediate support including a polymer layer having a main free contact face, the polymer's thermal expansion coefficient being greater than that of the thin film, adhesively brings into contact the contact face of the strained thin film with the contact face of the polymer layer, eliminates the initial support, realizing relaxation of the thin film through formation of wrinkles and revealing the first main face of the thin film, increases the polymer layer temperature to stretch the relaxed thin film and eliminate the wrinkles, secures the first main face of the thin film with one face of a receiving substrate, and eliminates the intermediate support to obtain a relaxed thin film integral with the receiving substrate.
摘要翻译：一种通过初始支撑件的第一主面固定的应变薄膜的方法，薄膜的第二主面是接触面。该方法提供包括具有主自由接触面的聚合物层的中间支撑体，聚合物的热膨胀系数大于薄膜的热膨胀系数，粘合地使应变薄膜的接触面与聚合物的接触面接触消除初始支持，通过形成皱纹实现薄膜的松弛并显露薄膜的第一主面，增加聚合物层温度以拉伸松弛薄膜并消除皱纹，确保第一主面该薄膜具有接收基板的一个面，并且消除了中间支撑以获得与接收基板成一体的松弛薄膜。

7. 发明申请

US20110104829A1 METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE 有权
标题翻译：通过微电子基板传输的方法
公开(公告)号：US20110104829A1
公开(公告)日：2011-05-05
申请号：US12936582
申请日：2009-04-03
申请人： Jean-Sebastien Moulet , Lea Di Cioccio , Marion Migette
发明人： Jean-Sebastien Moulet , Lea Di Cioccio , Marion Migette
IPC分类号： H01L43/12
CPC分类号： H01L21/187 , Y10S414/135 , Y10S414/141
摘要： A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.
摘要翻译：一种执行将一个或多个第一部件或第一层转移到第二基板上的方法，包括：a）通过静电效应将一个或多个第一部件或第一层施加并保持在第一基板，由铁电材料制成，带电，b）直接或通过分子粘附接触，并将部件或层转移到第二基板上，以及c）拆除第一基板，留下至少一个部分的第二基板上的部件或层。

8. 发明申请

US20110033976A1 SELF-ASSEMBLY OF CHIPS ON A SUBSTRATE 有权
标题翻译：基板上的自组装
公开(公告)号：US20110033976A1
公开(公告)日：2011-02-10
申请号：US12936765
申请日：2009-04-07
申请人： Lea Di Cioccio , Francois Grossi , Pierric Gueguen , Laurent Vandroux
发明人： Lea Di Cioccio , Francois Grossi , Pierric Gueguen , Laurent Vandroux
IPC分类号： H01L21/50
CPC分类号： H01L24/83 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/82 , H01L24/90 , H01L24/95 , H01L25/50 , H01L2224/0401 , H01L2224/08235 , H01L2224/16 , H01L2224/16235 , H01L2224/24011 , H01L2224/24226 , H01L2224/2919 , H01L2224/32145 , H01L2224/80004 , H01L2224/80143 , H01L2224/81136 , H01L2224/81143 , H01L2224/81801 , H01L2224/81894 , H01L2224/83002 , H01L2224/83141 , H01L2224/83143 , H01L2224/83192 , H01L2224/8385 , H01L2224/83894 , H01L2224/9202 , H01L2224/95085 , H01L2224/95146 , H01L2225/06562 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/07802 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15192 , H01L2924/0665 , H01L2924/00
摘要： A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.
摘要翻译：在衬底的表面上形成至少一个亲水附着区域的方法，用于自组装组件或芯片，其中产生界定亲水附着区域的疏水区域。

9. 发明申请

US20080009123A1 Method for Bonding Two Free Surfaces, Respectively of First and Second Different Substrates 审中-公开
标题翻译：分别接合第一和第二不同基板的两个自由表面的方法
公开(公告)号：US20080009123A1
公开(公告)日：2008-01-10
申请号：US11667919
申请日：2005-12-06
申请人： Marek Kostrzewa , Lea Di Cioccio , Guillaume Delapierre
发明人： Marek Kostrzewa , Lea Di Cioccio , Guillaume Delapierre
IPC分类号： H01L21/30
CPC分类号： C09J5/02
摘要： A method for bonding two free surfaces, respectively of first and second different substrates, includes a formation step, on the free surface of the first substrate, of a self-assembled mono-molecular layer consisting of a thiol compound of the SH—R—X type, where —R is a carbonaceous chain and —X is a group selected from the group consisting in —H, —OH and —COOH, at least said free surface of the first substrate being formed by a material able to form molecular bonds with the —SH group of the thiol compound. The method also includes preparing the free surface of the second substrate consisting in saturating the free surface of the second substrate with —H groups if —X is a —H group or with —OH groups if —X is selected from the group consisting in —OH and —COOH, and placing the two free surfaces in contact.
摘要翻译：分别用于接合第一和第二不同基板的两个自由表面的方法包括在第一基板的自由表面上形成由SH-RX型硫醇化合物组成的自组装单分子层的形成步骤，其中-R是碳质链，-X是选自-H，-OH和-COOH的基团，所述第一基底的至少所述自由表面由能够与所述第一基底形成分子键的材料形成 -SH组的硫醇化合物。该方法还包括制备第二衬底的自由表面，其组成为：如果-X为-H基团则用-H基团饱和第二衬底的自由表面，如果-X选自 - OH和-COOH，并将两个自由表面接触。

10. 发明申请

US20070117258A1 Method for the molecular bonding of microelectronic components to a polymer film 有权
标题翻译：微电子元件分子结合到聚合物膜上的方法
公开(公告)号：US20070117258A1
公开(公告)日：2007-05-24
申请号：US10581111
申请日：2004-12-06
申请人： Hubert Moriceau , Christophe Morales , Lea Di Cioccio
发明人： Hubert Moriceau , Christophe Morales , Lea Di Cioccio
IPC分类号： H01L21/00 , H01L23/02
CPC分类号： H01L25/50 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L2224/08145 , H01L2224/08225 , H01L2224/8001 , H01L2224/80012 , H01L2224/80896 , H01L2224/80948 , H01L2924/0002
摘要： A method for direct molecular adhesion of an electronic compound (6) on a polymer (4) is described. The polymer (4) is coated with a bonding layer (5), for example silicon oxide, which enables the problems caused by the presence of hydrocarbons to be overcome. The method makes it possible to produce adhesive-free three-dimensional structures (10).
摘要翻译：描述了电子化合物（6）在聚合物（4）上直接分子粘合的方法。聚合物（4）涂覆有结合层（5），例如氧化硅，其能够克服由烃的存在引起的问题。该方法使得可以生产无粘合剂的三维结构（10）。

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