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1. 发明申请

US20100330363A1 RESIN SUBSTRATE 审中-公开
标题翻译：树脂基材
公开(公告)号：US20100330363A1
公开(公告)日：2010-12-30
申请号：US12667021
申请日：2008-06-27
申请人： Tetsushi Fujinaga , Makiko Takagi , Masanori Hashimoto , Shin Asari , Ryuji Oyama
发明人： Tetsushi Fujinaga , Makiko Takagi , Masanori Hashimoto , Shin Asari , Ryuji Oyama
IPC分类号： B32B27/06 , C23C16/34
CPC分类号： C23C16/345 , Y10T428/269
摘要： A resin substrate of the present invention has a resin layer and a surface layer formed on a surface of the resin layer, wherein the surface layer is a layer comprising silicon nitride as a main component and deposited by the chemical vapor deposition method, and at the interface between the resin layer and the surface layer, at the interface between the resin layer and the surface layer, an interfacial region over which a percentage changes from 80% to 20% has a thickness of not more than 25 nm, wherein the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%. The surface layer has an average surface roughness (Ra) of not more than 1 nm. The resin substrate has properties of water vapor barrier and surface flatness.
摘要翻译：本发明的树脂基板具有树脂层和在树脂层的表面上形成的表面层，其中表面层是以氮化硅为主要成分并通过化学气相沉积法沉积的层，在树脂层和表面层之间的界面处，在树脂层和表面层之间的界面处，百分比从80％变化到20％的界面区域具有不大于25nm的厚度，其中，表层中的最大氮浓度和树脂层中的稳态氮浓度为100％。表面层的平均表面粗糙度（Ra）不大于1nm。树脂基板具有水蒸气阻隔性和表面平坦性。

2. 发明申请

US20070209677A1 Self-Cleaning Catalytic Chemical Vapor Deposition Apparatus And Cleaning Method Thereof 审中-公开
标题翻译：自清洁催化化学气相沉积装置及其清洗方法
公开(公告)号：US20070209677A1
公开(公告)日：2007-09-13
申请号：US10591905
申请日：2005-03-10
申请人： Makiko Kitazoe , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
发明人： Makiko Kitazoe , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
IPC分类号： C23C16/00 , B08B5/00 , B08B3/12
CPC分类号： C23C16/4405
摘要： Provided is a self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. With conductors 5a, 5b which supply a constant current to a catalytic body 4 within a reaction chamber 2 from a heating power supply 6 and terminals 6a, 6b of the heating power supply 6 kept electrically insulated from the reaction chamber 2, a cleaning gas containing halogen elements is introduced into the reaction chamber 2 which has been evacuated, and the catalytic body 4 is heated by the energization from the heating power supply 6. An active species generated by this heating is caused to react with an adhering film which adheres to the interior of the reaction chamber 2, whereby the adhering film is removed. During this removal of the adhering film, a DC bias voltage having an appropriate polarity and an appropriate value is applied from a constant-voltage power supply 8 to the conductor 5b of the heating power supply 6.
摘要翻译：提供了一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化剂体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。利用从加热电源6向加热电源6的反应室2内的催化体4供给恒定电流的导体5a，5b与加热电源6的端子6a，6b保持与反应室2电绝缘，将含有卤素元素的清洁气体引入已经被抽真空的反应室2中，并且通过来自加热电源6的激励来加热催化剂体4.通过该加热产生的活性物质与粘合膜反应其粘附到反应室2的内部，由此去除粘附膜。在去除粘合膜期间，从恒压电源8向加热电源6的导体5b施加具有适当极性和适当值的DC偏置电压。

3. 发明授权

US4661420A Optical magnetic recording member 失效
标题翻译：光磁记录元件
公开(公告)号：US4661420A
公开(公告)日：1987-04-28
申请号：US698480
申请日：1985-02-05
申请人： Kyuzo Nakamura , Yoshifumi Ota , Shin Asari , Tsutomu Asaka
发明人： Kyuzo Nakamura , Yoshifumi Ota , Shin Asari , Tsutomu Asaka
IPC分类号： G11B5/72 , G11B5/73 , G11B11/105 , G11B7/24
CPC分类号： G11B5/7325 , G11B11/10586 , G11B5/72 , Y10S428/90
摘要： An enhancement of the Kerr rotation angle is obtained in a magnetic recording member by providing an amorphous layer of Si, Ge, or alloy thereof. Such layer may further contain any of the following additional elements: H, C, F, N and O.
摘要翻译：通过提供Si，Ge或其合金的非晶层，在磁记录部件中获得克尔旋转角的增强。该层可以进一步包含以下任何附加元素：H，C，F，N和O.

4. 发明申请

US20100301339A1 METHOD OF PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR 有权
标题翻译：生产薄膜晶体管和薄膜晶体管的方法
公开(公告)号：US20100301339A1
公开(公告)日：2010-12-02
申请号：US12808397
申请日：2008-12-12
申请人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
发明人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02675 , H01L27/1285 , H01L29/66765
摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.
摘要翻译：本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上，从而改善流动性。由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

5. 发明申请

US20120145184A1 SELF-CLEANING CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS AND CLEANING METHOD THEREOF 审中-公开
标题翻译：自清洁催化剂蒸气沉积装置及其清洗方法
公开(公告)号：US20120145184A1
公开(公告)日：2012-06-14
申请号：US13398594
申请日：2012-02-16
申请人： Makiko KITAZOE , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
发明人： Makiko KITAZOE , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
IPC分类号： B08B3/10 , B08B7/04 , B08B5/00
CPC分类号： C23C16/4405
摘要： A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply.
摘要翻译：一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。导体从加热电源向反应室内的催化体提供恒定电流。加热电源的端子与反应室电绝缘。将含有卤元素的清洁气体引入抽空的反应室中。催化剂体被加热电源加热。通过该加热产生的活性物质与粘附到反应室内部的粘附膜反应，其被除去。在该移除期间，从恒定电压电源向加热电源的导体施加具有适当极性和适当值的DC偏置电压。

6. 发明申请

US20110180402A1 Vacuum Processing Apparatus 审中-公开
标题翻译：真空处理设备
公开(公告)号：US20110180402A1
公开(公告)日：2011-07-28
申请号：US13122584
申请日：2009-10-07
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Shin Asari , Kazuya Saito , Shigemitsu Sato , Masashi Kikuchi
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Shin Asari , Kazuya Saito , Shigemitsu Sato , Masashi Kikuchi
IPC分类号： C23C14/34 , B05C11/00 , B05C13/00 , C23C16/44 , H01L21/336 , C23C14/08
CPC分类号： H01L21/67161 , C23C14/568 , C23C16/54 , H01L21/67748 , H01L21/6776 , H01L27/1225 , H01L29/7869
摘要： To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved.
摘要翻译：提供一种能够通过适合每个处理步骤中的处理内容的方法来支撑和输送基板并且能够抑制处理室内提供的各种机构受到不利影响的真空处理设备。更具体地，装置的CVD室被配置为水平的，因此可以解决上述问题。此外，通过将溅射装置构成为垂直型处理装置，可以解决异常放电的问题。

7. 发明申请

US20120034731A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：光电转换装置制造系统和光电转换装置的制造方法
公开(公告)号：US20120034731A1
公开(公告)日：2012-02-09
申请号：US13262758
申请日：2010-04-06
申请人： Takafumi Noguchi , Hideyuki Ogata , Katsuhiko Mori , Yasuo Shimizu , Hiroto Uchida , Shin Asari
发明人： Takafumi Noguchi , Hideyuki Ogata , Katsuhiko Mori , Yasuo Shimizu , Hiroto Uchida , Shin Asari
IPC分类号： H01L31/18 , H01L31/105
CPC分类号： H01L31/1876 , H01L21/67173 , H01L21/67207 , H01L21/6776 , H01L31/076 , H01L31/18 , H01L31/1824 , H01L31/202 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequentially layered on a transparent-electroconductive film formed on a substrate in the photoelectric conversion device. The system includes: an i-layer-formation reaction chamber comprising at least a first film formation section, a second film formation section, and a third film formation section, the i-layer-formation reaction chamber forming the i-type semiconductor layer, the first film formation section, the second film formation section, and the third film formation section being sequentially arranged along a transfer direction in which the substrate is transferred; and a plurality of door valves separating the first film formation section, the second film formation section, and the third film formation section so that the length of the second film formation section is greater than the lengths of the first film formation section and the third film formation section in the transfer direction.
摘要翻译：制造光电转换元件的光电转换元件制造系统包括p型半导体层，i型半导体层和n型半导体层的光电转换元件，其依次层叠在透明导电性膜形成在光电转换装置的基板上。该系统包括：i层形成反应室，至少包括第一成膜部分，第二成膜部分和第三成膜部分，形成i型半导体层的i层形成反应室，所述第一成膜部，所述第二成膜部和所述第三成膜部沿着所述基板的转移方向依次配置; 以及分隔第一成膜部分，第二成膜部分和第三成膜部分的多个门阀，使得第二成膜部分的长度大于第一成膜部分和第三膜片的长度形成部分在传送方向。

8. 发明申请

US20120015473A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM, AND METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置，光电转换装置制造系统及使用光电转换装置制造系统的方法
公开(公告)号：US20120015473A1
公开(公告)日：2012-01-19
申请号：US13146624
申请日：2010-01-29
申请人： Hiroto Uchida , Tetsushi Fujinaga , Masafumi Wakai , Tadamasa Kobayashi , Yoshinobu Ue , Kyuzo Nakamura , Shin Asari , Kazuya Saito , Koichi Matsumoto , Yasuo Shimizu , Katsuhiko Mori
发明人： Hiroto Uchida , Tetsushi Fujinaga , Masafumi Wakai , Tadamasa Kobayashi , Yoshinobu Ue , Kyuzo Nakamura , Shin Asari , Kazuya Saito , Koichi Matsumoto , Yasuo Shimizu , Katsuhiko Mori
IPC分类号： H01L31/0352
CPC分类号： C23C16/54 , C23C16/24 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.
摘要翻译：光电转换装置的制造方法制造光电转换装置，其中第一光电转换单元和第二光电转换单元依次层叠在形成于基板上的透明导电膜上。该方法包括：在多个第一等离子体CVD反应室中形成第一p型半导体层，第一i型半导体层，第一n型半导体层和第二p型半导体层; 将第二p型半导体层暴露于空气气氛中; 在形成第二i型半导体层之前，将第二等离子体CVD反应室内的p型杂质气体供给; 在第二等离子体CVD反应室中在暴露于空气气氛的第二p型半导体层上形成第二i型半导体层; 以及在第二i型半导体层上形成第二n型半导体层。

9. 发明申请

US20080050523A1 Unit-Layer Post-Processing Catalyst Chemical-Vapor-Deposition Apparatus and Its Film Forming Method 审中-公开
标题翻译：单层后处理催化剂化学气相沉积装置及其成膜方法
公开(公告)号：US20080050523A1
公开(公告)日：2008-02-28
申请号：US10593444
申请日：2005-03-25
申请人： Makiko Kitazoe , Hiromi Itho , Shin Asari , Kazuya Saito
发明人： Makiko Kitazoe , Hiromi Itho , Shin Asari , Kazuya Saito
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： H01L21/02277 , C23C16/345 , C23C16/44 , C23C16/45523 , H01L21/0217 , H01L21/022 , H01L21/0228 , H01L21/02337 , H01L21/3185
摘要： To provide a unit-layer post-treatment catalyst vapor-deposition apparatus and unit-layer post-treatment film forming method capable of improving in-face uniformity, step coverage, and film quality of a silicon nitride film or the like and forming a thin film by performing surface treatment after forming a film for each unit layer.A thin film post-treated for each unit layer is laminated by using a film forming step of introducing mixed gas of silane gas and ammonia gas into a reactive vessel 2 as a source gas like a rectangular pulse and contacting with and thermal-decomposing the source gas by a catalyst body 8, and forming a silicon nitride film on a substrate 5, one surface treating step of bringing ammonia gas into contact with the catalyst body 8 and then bleaching the ammonia gas on the surface of a silicon nitride film on the substrate 5 and other surface treating step of bleaching hydrogen gas on the surface of the silicon nitride film on the substrate 5 after bringing hydrogen gas into contact with the catalyst body 8 as one cycle and repeating the step of one cycle.
摘要翻译：为了提供能够提高氮化硅膜等的面内均匀性，台阶覆盖率和膜质量的单层后处理催化剂蒸镀装置和单位层后处理膜形成方法，通过在为每个单位层形成膜之后进行表面处理而进行。通过使用将硅烷气体和氨气的混合气体引入作为长方体脉冲的源气体的反应性容器2中的膜形成工序来层压对每个单位层进行后处理的薄膜，并与源极接触并热分解气体，并且在基板5上形成氮化硅膜，将氨气与催化剂体8接触的一个表面处理步骤，然后漂白基板上的氮化硅膜表面上的氨气以及在使氢气与催化剂体8接触一个循环之后，在基板5上的氮化硅膜的表面上漂白氢气的表面处理步骤，并重复一个循环。

10. 发明授权

US08673705B2 Method of producing thin film transistor and thin film transistor 有权
标题翻译：薄膜晶体管和薄膜晶体管的制造方法
公开(公告)号：US08673705B2
公开(公告)日：2014-03-18
申请号：US12808397
申请日：2008-12-12
申请人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
发明人： Taro Morimura , Toru Kikuchi , Masanori Hashimoto , Shin Asari , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L21/84
CPC分类号： H01L21/02532 , H01L21/02422 , H01L21/02675 , H01L27/1285 , H01L29/66765
摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.
摘要翻译：本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上，从而改善流动性。由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

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