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1. 发明申请

US20110201150A1 Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
标题翻译：溅射装置，薄膜形成方法和场效应晶体管的制造方法
公开(公告)号：US20110201150A1
公开(公告)日：2011-08-18
申请号：US13123728
申请日：2009-10-09
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
IPC分类号： H01L21/36 , C23C14/34 , C23C14/08
CPC分类号： C23C14/352 , C23C14/568 , H01J37/32752 , H01J37/3408
摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] The sputtering apparatus 100 includes a conveying mechanism, a first target Tc1, a second target (Tc2 to Tc5), and a sputtering means. The conveying mechanism conveys a supporting portion, which is arranged in an inside of a vacuum chamber and supports a substrate, linearly along a conveying surface parallel to the surface to be processed of the substrate. The first target Tc1 is opposed to the conveying surface with a first space therebetween. The second target (Tc2 to Tc5) is arranged on a downstream side in a conveying direction of the substrate with respect to the first target Tc1, and is opposed to the conveying surface with a second space smaller than the first space therebetween. The sputtering means sputters each target. According to this sputtering apparatus 100, the damage received by the base layer is small, and hence it is possible to form a thin-film having good film-forming properties.
摘要翻译：本发明提供能够降低基底层损伤的溅射装置，薄膜形成方法和场效晶体管的制造方法。 [解决方案]溅射装置100包括传送机构，第一目标Tc1，第二目标（Tc2至Tc5）和溅射装置。传送机构传送支撑部分，其布置在真空室的内部并且沿着平行于待处理基板的表面的输送表面线性地支撑基板。第一目标Tc1与其间具有第一空间的输送表面相对。第二靶（Tc2〜Tc5）相对于第一靶Tc1布置在基板的输送方向的下游侧，并且与输送面相对，第二空间小于第一空间。溅射意味着喷射每个目标。根据该溅射装置100，由基底层接收的损伤小，因此可以形成具有良好成膜性能的薄膜。

2. 发明申请

US20110198213A1 Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
标题翻译：溅射装置，薄膜形成方法和场效应晶体管的制造方法
公开(公告)号：US20110198213A1
公开(公告)日：2011-08-18
申请号：US13123720
申请日：2009-10-09
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C23C14/352 , H01J37/32091 , H01J37/3408 , H01J37/3426
摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] The sputtering apparatus according to the present invention sputters target portions Tc1 to Tc5, which are arranged in an inside of a vacuum chamber, along the arrangement direction thereof in sequence, to thereby form a thin-film on a surface of a substrate 10. With this, rate at which sputtered particles enter the surface of the substrate in a direction oblique to the surface of the substrate is increased, and hence it is possible to achieve a reduction of the damage of the base layer.
摘要翻译：本发明提供能够降低基底层损伤的溅射装置，薄膜形成方法和场效晶体管的制造方法。本发明的溅射装置沿着排列方向依次排列配置在真空室内的目标部分Tc1〜Tc5，从而在其表面上形成薄膜由此，溅射粒子沿着与衬底表面倾斜的方向进入衬底表面的速率增加，因此可以实现基底层的损伤的降低。

3. 发明申请

US20110195562A1 Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
标题翻译：溅射装置，薄膜形成方法和场效应晶体管的制造方法
公开(公告)号：US20110195562A1
公开(公告)日：2011-08-11
申请号：US13123727
申请日：2009-10-14
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Kazuya Saito
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/083 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] A sputtering apparatus according to an embodiment of the present invention is a sputtering apparatus for forming a thin-film on a surface to be processed of a substrate 10, and includes a vacuum chamber 61, a supporting portion 93, a target 80, and a magnet 83. The magnet 83 generates plasma forming a region to be sputtered 80a, and moves the region to be sputtered 80abetween a first position in which the region to be sputtered 80a is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed. With this, it is possible to weaken incident energy of sputtered particles incident on the surface to be processed of the substrate 10 from the region to be sputtered 80a, and to protect the base layer.
摘要翻译：本发明提供能够降低基底层损伤的溅射装置，薄膜形成方法和场效晶体管的制造方法。本发明的实施方式的溅射装置是在基板10的被处理面上形成薄膜的溅射装置，具有真空室61，支撑部93，靶 80和磁体83.磁体83产生等离子体，形成要溅射的区域80a，并且在要溅射的区域80a与待处理的表面不相对的第一位置之间移动要溅射的区域80，第二位置，其中要溅射的区域与待处理的表面相对。由此，可以从入射到被溅射区域80a上的入射到待处理基板10的表面上的溅射粒子的入射能量减弱，从而保护基底层。

4. 发明申请

US20110180402A1 Vacuum Processing Apparatus 审中-公开
标题翻译：真空处理设备
公开(公告)号：US20110180402A1
公开(公告)日：2011-07-28
申请号：US13122584
申请日：2009-10-07
申请人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Shin Asari , Kazuya Saito , Shigemitsu Sato , Masashi Kikuchi
发明人： Takaomi Kurata , Junya Kiyota , Makoto Arai , Yasuhiko Akamatsu , Satoru Ishibashi , Shin Asari , Kazuya Saito , Shigemitsu Sato , Masashi Kikuchi
IPC分类号： C23C14/34 , B05C11/00 , B05C13/00 , C23C16/44 , H01L21/336 , C23C14/08
CPC分类号： H01L21/67161 , C23C14/568 , C23C16/54 , H01L21/67748 , H01L21/6776 , H01L27/1225 , H01L29/7869
摘要： To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved.
摘要翻译：提供一种能够通过适合每个处理步骤中的处理内容的方法来支撑和输送基板并且能够抑制处理室内提供的各种机构受到不利影响的真空处理设备。更具体地，装置的CVD室被配置为水平的，因此可以解决上述问题。此外，通过将溅射装置构成为垂直型处理装置，可以解决异常放电的问题。

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