专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120015473A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM, AND METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置，光电转换装置制造系统及使用光电转换装置制造系统的方法
公开(公告)号：US20120015473A1
公开(公告)日：2012-01-19
申请号：US13146624
申请日：2010-01-29
申请人： Hiroto Uchida , Tetsushi Fujinaga , Masafumi Wakai , Tadamasa Kobayashi , Yoshinobu Ue , Kyuzo Nakamura , Shin Asari , Kazuya Saito , Koichi Matsumoto , Yasuo Shimizu , Katsuhiko Mori
发明人： Hiroto Uchida , Tetsushi Fujinaga , Masafumi Wakai , Tadamasa Kobayashi , Yoshinobu Ue , Kyuzo Nakamura , Shin Asari , Kazuya Saito , Koichi Matsumoto , Yasuo Shimizu , Katsuhiko Mori
IPC分类号： H01L31/0352
CPC分类号： C23C16/54 , C23C16/24 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.
摘要翻译：光电转换装置的制造方法制造光电转换装置，其中第一光电转换单元和第二光电转换单元依次层叠在形成于基板上的透明导电膜上。该方法包括：在多个第一等离子体CVD反应室中形成第一p型半导体层，第一i型半导体层，第一n型半导体层和第二p型半导体层; 将第二p型半导体层暴露于空气气氛中; 在形成第二i型半导体层之前，将第二等离子体CVD反应室内的p型杂质气体供给; 在第二等离子体CVD反应室中在暴露于空气气氛的第二p型半导体层上形成第二i型半导体层; 以及在第二i型半导体层上形成第二n型半导体层。

2. 发明申请

US20110204466A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置和光电转换装置制造系统
公开(公告)号：US20110204466A1
公开(公告)日：2011-08-25
申请号：US13061018
申请日：2009-08-28
申请人： Shinichi Asahina , Hirota Uchida , Shin Asari , Masanori Hashimoto , Tetsushi Fujinaga , Tadamasa Kobayashi , Masafumi Wakai , Kenichi Imakita , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
发明人： Shinichi Asahina , Hirota Uchida , Shin Asari , Masanori Hashimoto , Tetsushi Fujinaga , Tadamasa Kobayashi , Masafumi Wakai , Kenichi Imakita , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L31/105 , H01L31/18 , C23C16/22 , C23C16/50
CPC分类号： H01L31/077 , C23C16/24 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.
摘要翻译：一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层，型半导体层构成第二光电转换单元，在彼此不同的减压室中; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二光电转换单元的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层，在同一减压室内。

3. 发明申请

US20110155232A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM 审中-公开
标题翻译：光电转换装置制造方法，光电转换装置和光电转换装置制造系统
公开(公告)号：US20110155232A1
公开(公告)日：2011-06-30
申请号：US13061020
申请日：2009-08-28
申请人： Hirota Uchida , Tetsushi Fujinaga , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
发明人： Hirota Uchida , Tetsushi Fujinaga , Yoshinobu Ue , Kazuya Saito , Kyuzo Nakamura
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/077 , C23C16/24 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere.
摘要翻译：一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层，型半导体层，其在减压气氛中构成由结晶硅系薄膜构成的第二光电转换单元; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层。

4. 发明申请

US20100330363A1 RESIN SUBSTRATE 审中-公开
标题翻译：树脂基材
公开(公告)号：US20100330363A1
公开(公告)日：2010-12-30
申请号：US12667021
申请日：2008-06-27
申请人： Tetsushi Fujinaga , Makiko Takagi , Masanori Hashimoto , Shin Asari , Ryuji Oyama
发明人： Tetsushi Fujinaga , Makiko Takagi , Masanori Hashimoto , Shin Asari , Ryuji Oyama
IPC分类号： B32B27/06 , C23C16/34
CPC分类号： C23C16/345 , Y10T428/269
摘要： A resin substrate of the present invention has a resin layer and a surface layer formed on a surface of the resin layer, wherein the surface layer is a layer comprising silicon nitride as a main component and deposited by the chemical vapor deposition method, and at the interface between the resin layer and the surface layer, at the interface between the resin layer and the surface layer, an interfacial region over which a percentage changes from 80% to 20% has a thickness of not more than 25 nm, wherein the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%. The surface layer has an average surface roughness (Ra) of not more than 1 nm. The resin substrate has properties of water vapor barrier and surface flatness.
摘要翻译：本发明的树脂基板具有树脂层和在树脂层的表面上形成的表面层，其中表面层是以氮化硅为主要成分并通过化学气相沉积法沉积的层，在树脂层和表面层之间的界面处，在树脂层和表面层之间的界面处，百分比从80％变化到20％的界面区域具有不大于25nm的厚度，其中，表层中的最大氮浓度和树脂层中的稳态氮浓度为100％。表面层的平均表面粗糙度（Ra）不大于1nm。树脂基板具有水蒸气阻隔性和表面平坦性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式