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    • 3. 发明申请
    • RESIN SUBSTRATE
    • 树脂基材
    • US20100330363A1
    • 2010-12-30
    • US12667021
    • 2008-06-27
    • Tetsushi FujinagaMakiko TakagiMasanori HashimotoShin AsariRyuji Oyama
    • Tetsushi FujinagaMakiko TakagiMasanori HashimotoShin AsariRyuji Oyama
    • B32B27/06C23C16/34
    • C23C16/345Y10T428/269
    • A resin substrate of the present invention has a resin layer and a surface layer formed on a surface of the resin layer, wherein the surface layer is a layer comprising silicon nitride as a main component and deposited by the chemical vapor deposition method, and at the interface between the resin layer and the surface layer, at the interface between the resin layer and the surface layer, an interfacial region over which a percentage changes from 80% to 20% has a thickness of not more than 25 nm, wherein the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%. The surface layer has an average surface roughness (Ra) of not more than 1 nm. The resin substrate has properties of water vapor barrier and surface flatness.
    • 本发明的树脂基板具有树脂层和在树脂层的表面上形成的表面层,其中表面层是以氮化硅为主要成分并通过化学气相沉积法沉积的层, 在树脂层和表面层之间的界面处,在树脂层和表面层之间的界面处,百分比从80%变化到20%的界面区域具有不大于25nm的厚度,其中, 表层中的最大氮浓度和树脂层中的稳态氮浓度为100%。 表面层的平均表面粗糙度(Ra)不大于1nm。 树脂基板具有水蒸气阻隔性和表面平坦性。