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1. 发明授权

US07510984B2 Method of forming silicon nitride film and method of manufacturing semiconductor device 有权
标题翻译：形成氮化硅膜的方法和制造半导体器件的方法
公开(公告)号：US07510984B2
公开(公告)日：2009-03-31
申请号：US11057246
申请日：2005-02-15
申请人： Tsuyoshi Saito , Hiromi Itoh , Makiko Kitazoe
发明人： Tsuyoshi Saito , Hiromi Itoh , Makiko Kitazoe
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , C23C16/045 , C23C16/345 , C23C16/44 , H01L21/0217 , H01L21/02277 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L29/7833
摘要： A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.
摘要翻译：形成氮化硅膜的方法包括：通过将含有硅和氮的第一气体和含有氮和氢的第二气体施加到在减压气氛中加热的催化剂来形成氮化硅膜。一种制造半导体器件的方法，包括以下步骤：通过权利要求1所述的方法在具有半导体层的衬底上形成氮化硅膜，选择性地设置在半导体层的主表面上的栅极绝缘膜，以及栅电极设在栅极绝缘膜上; 并且通过在大致垂直于所述主体的方向上蚀刻所述氮化硅膜，在所述半导体层和所述栅电极上除去所述栅极绝缘膜和所述栅电极的侧表面上的包含所述氮化硅膜的侧壁半导体层的表面。一种制造半导体器件的方法，包括以下步骤：通过权利要求1所述的方法在包括半导体层的衬底上形成氮化硅膜; 在所述氮化硅膜上形成层间绝缘层; 在所述层间绝缘层上形成具有开口的层; 并且在氮化硅膜的蚀刻速率大于层间绝缘层的蚀刻速率的条件下，经由开口蚀刻层间绝缘层。

2. 发明申请

US20080050523A1 Unit-Layer Post-Processing Catalyst Chemical-Vapor-Deposition Apparatus and Its Film Forming Method 审中-公开
标题翻译：单层后处理催化剂化学气相沉积装置及其成膜方法
公开(公告)号：US20080050523A1
公开(公告)日：2008-02-28
申请号：US10593444
申请日：2005-03-25
申请人： Makiko Kitazoe , Hiromi Itho , Shin Asari , Kazuya Saito
发明人： Makiko Kitazoe , Hiromi Itho , Shin Asari , Kazuya Saito
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： H01L21/02277 , C23C16/345 , C23C16/44 , C23C16/45523 , H01L21/0217 , H01L21/022 , H01L21/0228 , H01L21/02337 , H01L21/3185
摘要： To provide a unit-layer post-treatment catalyst vapor-deposition apparatus and unit-layer post-treatment film forming method capable of improving in-face uniformity, step coverage, and film quality of a silicon nitride film or the like and forming a thin film by performing surface treatment after forming a film for each unit layer.A thin film post-treated for each unit layer is laminated by using a film forming step of introducing mixed gas of silane gas and ammonia gas into a reactive vessel 2 as a source gas like a rectangular pulse and contacting with and thermal-decomposing the source gas by a catalyst body 8, and forming a silicon nitride film on a substrate 5, one surface treating step of bringing ammonia gas into contact with the catalyst body 8 and then bleaching the ammonia gas on the surface of a silicon nitride film on the substrate 5 and other surface treating step of bleaching hydrogen gas on the surface of the silicon nitride film on the substrate 5 after bringing hydrogen gas into contact with the catalyst body 8 as one cycle and repeating the step of one cycle.
摘要翻译：为了提供能够提高氮化硅膜等的面内均匀性，台阶覆盖率和膜质量的单层后处理催化剂蒸镀装置和单位层后处理膜形成方法，通过在为每个单位层形成膜之后进行表面处理而进行。通过使用将硅烷气体和氨气的混合气体引入作为长方体脉冲的源气体的反应性容器2中的膜形成工序来层压对每个单位层进行后处理的薄膜，并与源极接触并热分解气体，并且在基板5上形成氮化硅膜，将氨气与催化剂体8接触的一个表面处理步骤，然后漂白基板上的氮化硅膜表面上的氨气以及在使氢气与催化剂体8接触一个循环之后，在基板5上的氮化硅膜的表面上漂白氢气的表面处理步骤，并重复一个循环。

3. 发明申请

US20120145184A1 SELF-CLEANING CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS AND CLEANING METHOD THEREOF 审中-公开
标题翻译：自清洁催化剂蒸气沉积装置及其清洗方法
公开(公告)号：US20120145184A1
公开(公告)日：2012-06-14
申请号：US13398594
申请日：2012-02-16
申请人： Makiko KITAZOE , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
发明人： Makiko KITAZOE , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
IPC分类号： B08B3/10 , B08B7/04 , B08B5/00
CPC分类号： C23C16/4405
摘要： A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply.
摘要翻译：一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。导体从加热电源向反应室内的催化体提供恒定电流。加热电源的端子与反应室电绝缘。将含有卤元素的清洁气体引入抽空的反应室中。催化剂体被加热电源加热。通过该加热产生的活性物质与粘附到反应室内部的粘附膜反应，其被除去。在该移除期间，从恒定电压电源向加热电源的导体施加具有适当极性和适当值的DC偏置电压。

4. 发明申请

US20050196977A1 Method of forming silicon nitride film and method of manufacturing semiconductor device 有权
标题翻译：形成氮化硅膜的方法和制造半导体器件的方法
公开(公告)号：US20050196977A1
公开(公告)日：2005-09-08
申请号：US11057246
申请日：2005-02-15
申请人： Tsuyoshi Saito , Hiromi Itoh , Makiko Kitazoe
发明人： Tsuyoshi Saito , Hiromi Itoh , Makiko Kitazoe
IPC分类号： H01L21/318 , H01L21/4763 , H01L29/78
CPC分类号： H01L21/76829 , C23C16/045 , C23C16/345 , C23C16/44 , H01L21/0217 , H01L21/02277 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L29/7833
摘要： A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.
摘要翻译：形成氮化硅膜的方法包括：通过将含有硅和氮的第一气体和含有氮和氢的第二气体施加到在减压气氛中加热的催化剂来形成氮化硅膜。一种制造半导体器件的方法，包括以下步骤：通过权利要求1所述的方法在具有半导体层的衬底上形成氮化硅膜，选择性地设置在半导体层的主表面上的栅极绝缘膜，以及栅电极设在栅极绝缘膜上; 并且通过在大致垂直于所述主体的方向上蚀刻所述氮化硅膜，在所述半导体层和所述栅电极上除去所述栅极绝缘膜和所述栅电极的侧表面上的包含所述氮化硅膜的侧壁半导体层的表面。一种制造半导体器件的方法，包括以下步骤：通过权利要求1所述的方法在包括半导体层的衬底上形成氮化硅膜; 在所述氮化硅膜上形成层间绝缘层; 在所述层间绝缘层上形成具有开口的层; 并且在氮化硅膜的蚀刻速率大于层间绝缘层的蚀刻速率的条件下，经由开口蚀刻层间绝缘层。

5. 发明申请

US20070209677A1 Self-Cleaning Catalytic Chemical Vapor Deposition Apparatus And Cleaning Method Thereof 审中-公开
标题翻译：自清洁催化化学气相沉积装置及其清洗方法
公开(公告)号：US20070209677A1
公开(公告)日：2007-09-13
申请号：US10591905
申请日：2005-03-10
申请人： Makiko Kitazoe , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
发明人： Makiko Kitazoe , Shuji Osono , Hiromi Itoh , Kazuya Saito , Shin Asari
IPC分类号： C23C16/00 , B08B5/00 , B08B3/12
CPC分类号： C23C16/4405
摘要： Provided is a self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. With conductors 5a, 5b which supply a constant current to a catalytic body 4 within a reaction chamber 2 from a heating power supply 6 and terminals 6a, 6b of the heating power supply 6 kept electrically insulated from the reaction chamber 2, a cleaning gas containing halogen elements is introduced into the reaction chamber 2 which has been evacuated, and the catalytic body 4 is heated by the energization from the heating power supply 6. An active species generated by this heating is caused to react with an adhering film which adheres to the interior of the reaction chamber 2, whereby the adhering film is removed. During this removal of the adhering film, a DC bias voltage having an appropriate polarity and an appropriate value is applied from a constant-voltage power supply 8 to the conductor 5b of the heating power supply 6.
摘要翻译：提供了一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化剂体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。利用从加热电源6向加热电源6的反应室2内的催化体4供给恒定电流的导体5a，5b与加热电源6的端子6a，6b保持与反应室2电绝缘，将含有卤素元素的清洁气体引入已经被抽真空的反应室2中，并且通过来自加热电源6的激励来加热催化剂体4.通过该加热产生的活性物质与粘合膜反应其粘附到反应室2的内部，由此去除粘附膜。在去除粘合膜期间，从恒压电源8向加热电源6的导体5b施加具有适当极性和适当值的DC偏置电压。

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