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    • 2. 发明申请
    • High Performance CMOS Device Design
    • 高性能CMOS器件设计
    • US20090090935A1
    • 2009-04-09
    • US12330961
    • 2008-12-09
    • Chih-Hao WangShang-Chih ChenChing-Wei TsaiTa-Wei WangPang-Yen Tsai
    • Chih-Hao WangShang-Chih ChenChing-Wei TsaiTa-Wei WangPang-Yen Tsai
    • H01L29/78
    • H01L21/823807H01L21/823814H01L29/1054H01L29/66553H01L29/66636
    • A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate. The semiconductor device may further include a semiconductor-capping layer between the buffer layer and the gate dielectric, wherein the semiconductor-capping layer has a smaller lattice constant then the buffer layer.
    • 半导体器件包括栅极,栅极包括位于栅极电极下方的栅极电极和栅极电介质,形成在栅极电极和栅极电介质的侧壁上的间隔物,缓冲层,其具有位于栅极电介质下方的第一部分和间隔物 以及与间隔物相邻的第二部分,其中缓冲层的第二部分的顶表面在缓冲层的第一部分的顶表面下方凹陷,并且基本上与间隔物对准的源极/漏极区域。 缓冲层优选具有比下面的半导体衬底更大的晶格常数。 半导体器件还可以包括在缓冲层和栅极电介质之间的半导体覆盖层,其中半导体覆盖层具有比缓冲层更小的晶格常数。
    • 5. 发明申请
    • Semiconductor device and method for high-K gate dielectrics
    • 用于高K栅极电介质的半导体器件和方法
    • US20060131675A1
    • 2006-06-22
    • US11020377
    • 2004-12-22
    • Chih-Hao WangChing-Wei TsaiShang-Chih Chen
    • Chih-Hao WangChing-Wei TsaiShang-Chih Chen
    • H01L29/94
    • H01L29/517H01L21/28194H01L21/28202H01L29/1054H01L29/513H01L29/518H01L29/78
    • A semiconductor device and process including a high-k gate dielectric is described. A substrate is provided, and a high-k gate dielectric material, preferably amorphous HfSiON, is deposited over the substrate. In preferred embodiments, the high-k dielectric material includes nitrogen. In a preferred embodiment, a silicon nitride layer is deposited using jet vapor deposition (JVD) on the high-k dielectric material. When the JVD nitride layer is deposited according to preferred embodiments, the layer has a low density of charge traps, it maintains comparable carrier mobility and provides better EOT compared to oxide or oxynitride. A second nitrogen-containing layer formed between the high-k dielectric and the gate electrode acts as a diffusion barrier. It also reduces problems relating to oxygen vacancy formation in high-k dielectric and therefore minimizes Fermi-level pinning.
    • 描述了包括高k栅极电介质的半导体器件和工艺。 提供衬底,并且在衬底上沉积高k栅介质材料,优选无定形HfSiON。 在优选实施例中,高k电介质材料包括氮。 在优选实施例中,使用喷射气相沉积(JVD)在高k电介质材料上沉积氮化硅层。 当根据优选实施方案沉积JVD氮化物层时,该层具有低密度的电荷陷阱,与氧化物或氧氮化物相比,其维持可比较的载流子迁移率并提供更好的EOT。 形成在高k电介质和栅电极之间的第二含氮层用作扩散阻挡层。 它还减少了在高k电介质中与氧空位形成有关的问题,从而使费米能级钉扎最小化。
    • 6. 发明授权
    • Barbecue grill with an adjustable grid
    • 烧烤架可​​调网格
    • US06845705B1
    • 2005-01-25
    • US10816437
    • 2004-03-31
    • Shang-Chih Chen
    • Shang-Chih Chen
    • A47J37/07A47J37/00A23L1/00
    • A47J37/0704A47J2037/0795
    • A barbecue grill has a stand, a body, a grid and an adjusting device. The body is attached to the top of the stand. The grid is adjustably mounted on the body with the adjusting device. The adjusting device has a shaft and a positioning device. The shaft is moveably extended through the body and is rotatably connected to the grid. The positioning device is mounted between the body and the grid and is connected to the shaft to hold the shaft at a desired position. Accordingly, the grid can be rotated away from the body when the user want to add charcoal into the body or pick the roasted food from the grid. The use of the barbecue grill is convenient and versatile.
    • 烧烤架有一个立场,一个身体,一个网格和一个调整装置。 身体附着在支架的顶部。 网格可调节装置可调节地安装在身体上。 调节装置具有轴和定位装置。 轴可移动地延伸通过主体并且可旋转地连接到电网。 定位装置安装在主体和格栅之间,并连接到轴以将轴保持在期望的位置。 因此,当用户想要将木炭添加到身体中或从电网中挑取烤食物时,网格可以远离身体旋转。 使用烧烤架是方便和多才多艺的。
    • 7. 发明授权
    • Suction head and transporting machine applying the same
    • 吸头和运输机应用它
    • US08256813B2
    • 2012-09-04
    • US12722777
    • 2010-03-12
    • Jung-Lin HsiehShang-Chih ChenHung-Tsung Chung
    • Jung-Lin HsiehShang-Chih ChenHung-Tsung Chung
    • B25J15/06B25J11/00B66C1/02
    • B25J15/0616B25J15/0095B25J17/0208
    • A suction head including a first transmission part, a second transmission part and a suction nozzle is provided. The second transmission part is magnetically attracted by the first transmission part to permit a displacement of the second transmission part relative to the first transmission part. The suction nozzle is disposed on the second transmission part and transmitted by the first transmission part via the second transmission part. Additionally, a transporting machine including a shuttle, a transporting mechanism and the aforementioned suction nozzle is provided. The shuttle is capable of carrying an object being transported, and the suction head is driven by the transporting mechanism to take the object being transported. The suction head and the transporting machine applying the same provide high transporting efficiency and ensuring a normal operation in transporting process.
    • 提供了包括第一传动部分,第二传递部分和吸嘴的吸头。 第二传动部分由第一传动部分磁吸引,以允许第二传动部分相对于第一传动部分的位移。 吸嘴设置在第二传动部分上,并经第二传动部分由第一传动部分传送。 此外,提供了包括梭子,输送机构和上述吸嘴的输送机械。 梭子能够携带被运送的物体,并且吸引头由运送机构驱动以取出运送物体。 吸头和运送机运送效率高,运输过程中正常运转。