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1. 发明授权

US09018666B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09018666B2
公开(公告)日：2015-04-28
申请号：US12728853
申请日：2010-03-22
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

2. 发明授权

US08809893B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08809893B2
公开(公告)日：2014-08-19
申请号：US13127847
申请日：2009-11-16
申请人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/62
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.
摘要翻译：本发明涉及一种用于半导体的垂直/水平发光二极管。本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

3. 发明授权

US08309970B2 Vertical structure LED device and method of manufacturing the same 有权
标题翻译：垂直结构LED装置及其制造方法
公开(公告)号：US08309970B2
公开(公告)日：2012-11-13
申请号：US12767324
申请日：2010-04-26
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

4. 发明授权

US07968893B2 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07968893B2
公开(公告)日：2011-06-28
申请号：US12210472
申请日：2008-09-15
申请人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
发明人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
IPC分类号： H01L31/0256 , H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32
摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要翻译：公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性器件的低压工作及其制造方法。半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

5. 发明申请

US20100200867A1 VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直结构LED器件及其制造方法
公开(公告)号：US20100200867A1
公开(公告)日：2010-08-12
申请号：US12767324
申请日：2010-04-26
申请人： Myong Soo CHO , Ki Yeol PARK , Sang Yeob SONG , Si Hyuk LEE , Pun Jae CHOI
发明人： Myong Soo CHO , Ki Yeol PARK , Sang Yeob SONG , Si Hyuk LEE , Pun Jae CHOI
IPC分类号： H01L33/30
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

6. 发明申请

US20100109035A1 COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：化合物半导体发光装置及其制造方法
公开(公告)号：US20100109035A1
公开(公告)日：2010-05-06
申请号：US12418149
申请日：2009-04-03
申请人： Myong Soo CHO , Ki Yeol PARK , Pun Jae Choi
发明人： Myong Soo CHO , Ki Yeol PARK , Pun Jae Choi
IPC分类号： H01L33/00 , H01L21/363
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

7. 发明申请

US20100109026A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100109026A1
公开(公告)日：2010-05-06
申请号：US12266300
申请日：2008-11-06
申请人： Grigory ONUSHKIN , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory ONUSHKIN , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20 , H01L33/385
摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

8. 发明申请

US20070145382A1 Semiconductor light emitting diode and method for manufacturing the same 失效
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20070145382A1
公开(公告)日：2007-06-28
申请号：US11594758
申请日：2006-11-09
申请人： Pun Jae Choi , Sang Yeob Song , Suk Youn Hong
发明人： Pun Jae Choi , Sang Yeob Song , Suk Youn Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/24
摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.
摘要翻译：提供一种高效半导体发光二极管及其制造方法。半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型氮化物半导体层，其依次形成在导电基板上。在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

9. 发明授权

US08916402B2 Semiconductor light emitting device including substrate having protection layers providing protection against chemicals and method for manufacturing the same 有权
标题翻译：包括具有提供防止化学品保护的保护层的基板的半导体发光器件及其制造方法
公开(公告)号：US08916402B2
公开(公告)日：2014-12-23
申请号：US13460486
申请日：2012-04-30
申请人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
IPC分类号： H01L21/00 , H01L33/00 , H01L33/40 , H01L33/38
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

10. 发明申请

US20120211795A1 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING SUBSTRATE HAVING PROTECTION LAYERS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：包括具有保护层的衬底的半导体发光器件及其制造方法
公开(公告)号：US20120211795A1
公开(公告)日：2012-08-23
申请号：US13460486
申请日：2012-04-30
申请人： Myong Soo CHO , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo CHO , Ki Yeol Park , Pun Jae Choi
IPC分类号： H01L33/36 , H01L33/60 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

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