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1. 发明申请

US20150221843A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法和使用其的半导体发光器件封装
公开(公告)号：US20150221843A1
公开(公告)日：2015-08-06
申请号：US14615116
申请日：2015-02-05
申请人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
发明人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
IPC分类号： H01L33/62 , H01L33/56 , H01L33/44 , H01L33/10 , H01L33/36
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
摘要翻译：提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

2. 发明授权

US08525227B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08525227B2
公开(公告)日：2013-09-03
申请号：US12964218
申请日：2010-12-09
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/66
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/15 , H01L29/2003 , H01L29/41766 , H01L29/51 , H01L29/518 , H01L29/7787 , H01L29/812
摘要： There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench.
摘要翻译：提供了一种包括基底的半导体器件; 半导体层，形成在所述基底基板上，并且具有包括接收槽的台面突起; 源电极和漏电极，设置成在半导体层上彼此间隔开，源电极具有源极脚，漏电极具有排放支路; 以及与源电极和漏电极绝缘并且具有容纳在接收槽中的凹部的栅电极。台面突起具有超晶格结构，其包括分别在台面突起和源电极之间以及台面突起和漏电极之间的界面处的至少一个沟槽，并且源极腿和排出支路分别容纳在沟槽中。

3. 发明申请

US20120267642A1 Nitride semicondutor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267642A1
公开(公告)日：2012-10-25
申请号：US13137311
申请日：2011-08-04
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/12 , H01L21/335 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/475 , H01L29/66462
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，其中源电极与漏电极间隔开; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

4. 发明授权

US08188496B2 Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same 有权
标题翻译：包括具有保护层的基板的半导体发光器件及其制造方法
公开(公告)号：US08188496B2
公开(公告)日：2012-05-29
申请号：US12418149
申请日：2009-04-03
申请人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

5. 发明申请

US20110254057A1 NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF THE SAME 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20110254057A1
公开(公告)日：2011-10-20
申请号：US12842303
申请日：2010-07-23
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/205 , H01L21/20 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.
摘要翻译：本文公开了一种氮化物基半导体器件。氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。

6. 发明申请

US20110241066A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
标题翻译：半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装
公开(公告)号：US20110241066A1
公开(公告)日：2011-10-06
申请号：US13163107
申请日：2011-06-17
申请人： Pun Jae CHOI , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae CHOI , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

7. 发明申请

US20110233520A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233520A1
公开(公告)日：2011-09-29
申请号：US12964218
申请日：2010-12-09
申请人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/15 , H01L29/2003 , H01L29/41766 , H01L29/51 , H01L29/518 , H01L29/7787 , H01L29/812
摘要： There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench.
摘要翻译：提供了一种包括基底的半导体器件; 半导体层，形成在所述基底基板上，并且具有包括接收槽的台面突起; 源电极和漏电极，设置成在半导体层上彼此间隔开，源电极具有源极脚，漏电极具有排放支路; 以及与源电极和漏电极绝缘并且具有容纳在接收槽中的凹部的栅电极。台面突起具有超晶格结构，其包括分别在台面突起和源电极之间以及台面突起和漏电极之间的界面处的至少一个沟槽，并且源极腿和排出支路分别容纳在沟槽中。

8. 发明授权

US07964881B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US07964881B2
公开(公告)日：2011-06-21
申请号：US12189428
申请日：2008-08-11
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

9. 发明申请

US20110139961A1 LOW-LUMINANCE IMAGING DEVICE USING SILICON PHOTOMULTIPLIER 有权
标题翻译：低照度成像设备使用硅光电子器件
公开(公告)号：US20110139961A1
公开(公告)日：2011-06-16
申请号：US12753743
申请日：2010-04-02
申请人： Sung Yong An , Ki Yeol Park , Dong Sik Yoo
发明人： Sung Yong An , Ki Yeol Park , Dong Sik Yoo
IPC分类号： H01L31/167 , H01L31/0232
CPC分类号： H01L27/14601
摘要： Disclosed is a low-luminance imaging device using a silicon photomultiplier, which includes a first optical portion for collecting incident light, the silicon photomultiplier including a plurality of microcells so that photons of collected light are converted into photoelectrons which are then multiplied, a phosphor screen for converting the multiplied photoelectrons into photons, a second optical portion for transferring the converted photons, and an image sensor for picking-up the transferred photons thus obtaining an image, so that the imaging device has a high photomultiplication factor thereby obtaining an image having good image quality even at low luminance and achieving a low bias voltage and a small size.
摘要翻译：公开了一种使用硅光电倍增管的低亮度成像装置，该光电倍增管包括用于收集入射光的第一光学部分，所述硅光电倍增管包括多个微细胞，使得所收集的光的光子被转换成光电子，然后被乘以荧光屏用于将倍增的光电子转换成光子，用于传送转换的光子的第二光学部分和用于拾取所转移的光子的图像传感器，从而获得图像，使得成像装置具有高的光电倍增因子，从而获得具有良好的图像即使在低亮度下也能获得图像质量并实现低偏压和小尺寸。

10. 发明申请

US20110057257A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057257A1
公开(公告)日：2011-03-10
申请号：US12654942
申请日：2010-01-08
申请人： Ki Yeol Park , Jung Hee Lee , Jong Bong Ha , Young Hwan Park , Woo Chul Jeon
发明人： Ki Yeol Park , Jung Hee Lee , Jong Bong Ha , Young Hwan Park , Woo Chul Jeon
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4236 , H01L29/0657 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a recess structure formed thereon; a gate structure covering the recess structure; a source electrode and a drain electrode which are disposed to be spaced apart from each other with respect to the gate structure interposed therebetween, on the semiconductor layer, wherein the semiconductor layer having an upper layer whose thickness is increased toward a first direction facing the drain electrode from the gate structure.
摘要翻译：本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有形成在其上的凹部结构; 覆盖所述凹部结构的栅极结构; 源极电极和漏极电极，被设置成相对于介于它们之间的栅极结构彼此间隔开，在半导体层上，其中半导体层的厚度朝着面向漏极的第一方向上增加电极从栅极结构。

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