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1. 发明申请

US20150221843A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法和使用其的半导体发光器件封装
公开(公告)号：US20150221843A1
公开(公告)日：2015-08-06
申请号：US14615116
申请日：2015-02-05
申请人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
发明人： Pun Jae CHOI , Jae In SIM , Seok Min HWANG , Jin Hyun LEE , Myong Soo CHO , Ki Yeol PARK
IPC分类号： H01L33/62 , H01L33/56 , H01L33/44 , H01L33/10 , H01L33/36
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
摘要翻译：提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

2. 发明申请

US20100200867A1 VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直结构LED器件及其制造方法
公开(公告)号：US20100200867A1
公开(公告)日：2010-08-12
申请号：US12767324
申请日：2010-04-26
申请人： Myong Soo CHO , Ki Yeol PARK , Sang Yeob SONG , Si Hyuk LEE , Pun Jae CHOI
发明人： Myong Soo CHO , Ki Yeol PARK , Sang Yeob SONG , Si Hyuk LEE , Pun Jae CHOI
IPC分类号： H01L33/30
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

3. 发明申请

US20100109035A1 COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：化合物半导体发光装置及其制造方法
公开(公告)号：US20100109035A1
公开(公告)日：2010-05-06
申请号：US12418149
申请日：2009-04-03
申请人： Myong Soo CHO , Ki Yeol PARK , Pun Jae Choi
发明人： Myong Soo CHO , Ki Yeol PARK , Pun Jae Choi
IPC分类号： H01L33/00 , H01L21/363
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

4. 发明申请

US20120211795A1 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING SUBSTRATE HAVING PROTECTION LAYERS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：包括具有保护层的衬底的半导体发光器件及其制造方法
公开(公告)号：US20120211795A1
公开(公告)日：2012-08-23
申请号：US13460486
申请日：2012-04-30
申请人： Myong Soo CHO , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo CHO , Ki Yeol Park , Pun Jae Choi
IPC分类号： H01L33/36 , H01L33/60 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

5. 发明申请

US20110297992A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20110297992A1
公开(公告)日：2011-12-08
申请号：US13213988
申请日：2011-08-19
申请人： Pun Jae CHOI , Ki Yeol Park , Sang Bum LEE , Seon Young MYOUNG , Myong Soo CHO
发明人： Pun Jae CHOI , Ki Yeol Park , Sang Bum LEE , Seon Young MYOUNG , Myong Soo CHO
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

6. 发明申请

US20100187548A1 LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME AND MONOLITHIC LIGHT EMITTING DIODE ARRAY 有权
标题翻译：发光装置，其制造方法和单光发光二极管阵列
公开(公告)号：US20100187548A1
公开(公告)日：2010-07-29
申请号：US12725970
申请日：2010-03-17
申请人： Grigory ONUSHKIN , Jin Hyun LEE , Myong Soo CHO , Pun Jae CHOI
发明人： Grigory ONUSHKIN , Jin Hyun LEE , Myong Soo CHO , Pun Jae CHOI
IPC分类号： H01L33/62
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.
摘要翻译：一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

7. 发明申请

US20090173955A1 WHITE LIGHT EMITTING DEVICE 有权
标题翻译：白光发光装置
公开(公告)号：US20090173955A1
公开(公告)日：2009-07-09
申请号：US12399619
申请日：2009-03-06
申请人： Min Ho KIM , Masayoshi KOIKE , Kyeong Ik MIN , Myong Soo CHO
发明人： Min Ho KIM , Masayoshi KOIKE , Kyeong Ik MIN , Myong Soo CHO
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.
摘要翻译：本发明涉及使用晶片接合或金属接合的单片白光发光器件。在本发明中，提供导电基座。第一发光体通过金属层粘合在导电基座上。在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。此外，在导电基板的局部区域上形成第二发光体。在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。

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