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1. 发明申请

US20180158934A1 LATERAL HETEROJUNCTIONS IN TWO-DIMENSIONAL MATERIALS INTEGRATED WITH MULTIFERROIC LAYERS 审中-公开
公开(公告)号：US20180158934A1
公开(公告)日：2018-06-07
申请号：US15819959
申请日：2017-11-21
申请人： The Government of the United States of America, as represented by the Secretary of the Navy
发明人： Berend T. Jonker , Connie H. Li , Kathleen M. McCreary , Olaf M.J. van 't Erve
IPC分类号： H01L29/66 , H01L33/00 , H01L33/04 , H01L33/26 , H01L29/24 , H01L21/02 , H01L29/786 , G01N27/414
CPC分类号： H01L29/66977 , G01N27/4141 , H01L21/02381 , H01L21/0242 , H01L21/02488 , H01L21/02568 , H01L21/0262 , H01L21/02658 , H01L21/187 , H01L29/24 , H01L29/7391 , H01L29/778 , H01L29/78696 , H01L29/861 , H01L33/002 , H01L33/04 , H01L33/26
摘要： The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

2. 发明申请

US20180053879A1 Metallic Contact for Optoelectronic Semiconductor Device 审中-公开
公开(公告)号：US20180053879A1
公开(公告)日：2018-02-22
申请号：US15784905
申请日：2017-10-16
申请人： Sensor Electronic Technology, Inc.
发明人： Alexander Lunev , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC分类号： H01L33/38 , H01L33/14 , H01L31/0224 , H01L33/00 , H01L33/40 , H01L31/00 , H01L33/08 , H01L33/24
CPC分类号： H01L33/40 , H01L29/205 , H01L29/225 , H01L29/267 , H01L31/00 , H01L31/022408 , H01L31/03365 , H01L33/002 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/38 , H01L33/382 , H01L33/405
摘要： A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.

3. 发明申请

US20170271552A1 LIGHT EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
公开(公告)号：US20170271552A1
公开(公告)日：2017-09-21
申请号：US15455464
申请日：2017-03-10
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Dong Chan KIM
IPC分类号： H01L33/06 , H01L33/00 , H01L27/32 , H01L27/15 , H01L27/12 , H01L51/50 , H01L33/26 , H01L33/14
CPC分类号： H01L33/06 , H01L27/1214 , H01L27/156 , H01L27/3244 , H01L27/3248 , H01L33/002 , H01L33/14 , H01L33/26 , H01L51/502 , H01L51/506 , H01L51/5076
摘要： A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and the second electrode, the emission layer including quantum dots. The quantum dots include a core and a shell. Each of the core and the shell includes at least two selected from Mg, Zn, Te, Se, and S. When the quantum dots include Mg, a content of Mg in the shell is greater than a content of Mg in the core.

4. 发明授权

US09705054B2 Light emitting device module 有权
公开(公告)号：US09705054B2
公开(公告)日：2017-07-11
申请号：US14505362
申请日：2014-10-02
申请人： LG Innotek Co., Ltd.
发明人： Jun Seok Park , Ho Jin Lee
IPC分类号： H01L33/54 , H01L33/48 , H01L33/00 , H01L33/44 , H01L33/06 , H01L33/10 , H01L33/52 , H01L33/50 , H01L33/58 , H01L33/62 , H01L33/64
CPC分类号： H01L33/54 , H01L33/002 , H01L33/06 , H01L33/10 , H01L33/44 , H01L33/48 , H01L33/483 , H01L33/507 , H01L33/52 , H01L33/58 , H01L33/62 , H01L33/644 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A light emitting device module including a first and second lead frames, a light emitting device electrically connected to the first and second lead frames, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a resin layer surrounding the light emitting device, a PSR (photo solder resist) layer disposed between the first and second lead frames and the second lead frame and a sidewall disposed at the peripheral area of the light emitting device and including an inclined plane formed on at least one side surface thereof.

5. 发明授权

US09640731B2 Light emitting diode structure 有权
公开(公告)号：US09640731B2
公开(公告)日：2017-05-02
申请号：US14825899
申请日：2015-08-13
申请人： EPISTAR CORPORATION
发明人： Chen Ou , Chun-Hsiang Tu , De-Shan Kuo , Chun-Teng Ko , Po-Shun Chiu , Chia-Liang Hsu
IPC分类号： H01L33/46 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/42
CPC分类号： H01L33/46 , H01L33/002 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

6. 发明授权

US09484489B2 Engineered band gaps 有权
标题翻译：工程带隙
公开(公告)号：US09484489B2
公开(公告)日：2016-11-01
申请号：US14818035
申请日：2015-08-04
申请人： Massachusetts Institute of Technology
发明人： Ju Li , Xiaofeng Qian , Menghao Wu
IPC分类号： H01L31/109 , H01L33/04 , H01L33/00 , H01L31/072 , H01L29/04
CPC分类号： B01J19/127 , H01L21/02568 , H01L21/02609 , H01L29/045 , H01L31/0264 , H01L31/035236 , H01L31/036 , H01L31/072 , H01L31/109 , H01L31/186 , H01L33/002 , H01L33/04 , H01L2933/0033 , Y02E10/50
摘要： An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.
摘要翻译：公开了一种光电子器件及其使用和制造方法。在一个实施例中，光电子器件包括具有对应的第一和第二晶格方向的第一和第二半导体原子薄层。第一和第二半导电原子薄层位于彼此附近，并且第一晶格方向和第二晶格方向之间的角度差在Vicnal的约0.000001°至0.5°之间，或约0.000001°和0.5°之间第一和第二半导电原子薄层的角度。或者或除了上述之外，第一和第二半导体原子薄层可以形成具有在约50nm至3cm之间的周期的激子漏斗的莫尔超晶格。光电子器件还可以包括与半导体原子薄层电连通的电荷载体导体，以注入或提取电荷载体。

7. 发明申请

US20160072008A1 SURFACE-PASSIVATED SILICON QUANTUM DOT PHOSPHORS 审中-公开
标题翻译：表面钝化硅量子点磷光体
公开(公告)号：US20160072008A1
公开(公告)日：2016-03-10
申请号：US14933547
申请日：2015-11-05
申请人： University of Washington through its Center for Commercialization
发明人： Chang-Ching Tu , Guozhong Cao , Lih Y. Lin
IPC分类号： H01L33/06 , H01L33/50 , H01L33/56 , H01L33/00
CPC分类号： H01L33/06 , C09K11/02 , C09K11/025 , C09K11/59 , H01L33/002 , H01L33/0054 , H01L33/44 , H01L33/50 , H01L33/56
摘要： Phosphors formed using silicon nanoparticles are provided. The phosphors exhibit bright fluorescence and high quantum yield, making them ideal for lighting applications. Methods for making the silicon phosphors are also provided, along with lighting devices that incorporate the silicon phosphors.
摘要翻译：提供了使用硅纳米颗粒形成的荧光体。荧光体表现出明亮的荧光和高的量子产率，使其成为照明应用的理想选择。还提供了制造硅磷光体的方法以及掺入硅磷光体的照明装置。

8. 发明申请

US20160071969A1 HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM NITRIDE LAYER 有权
标题翻译：具有硝酸盐层的高电子移动晶体管
公开(公告)号：US20160071969A1
公开(公告)日：2016-03-10
申请号：US14931009
申请日：2015-11-03
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Chen-Hao CHIANG , Po-Chun LIU , Chi-Ming CHEN , Min-Chang CHING , Chung-Yi YU , Chia-Shiung TSAI , Ru-Liang LEE
IPC分类号： H01L29/778 , H01L23/31 , H01L29/205 , H01L29/20 , H01L29/45
CPC分类号： H01L29/7784 , H01L21/18 , H01L21/182 , H01L21/2258 , H01L21/3245 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/452 , H01L29/66431 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L31/18 , H01L31/1848 , H01L33/002 , H01L33/0025 , H01L2924/0002 , H01L2924/10323 , H01L2924/10344 , H01L2924/00
摘要： A semiconductor device includes a substrate, a first layer over the substrate, a second layer over the first layer, and a third layer over the second layer. The third layer has a first portion and a second portion. The first portion of the third layer is separated from the second portion of the third layer. The semiconductor device also includes a first blended region beneath the first portion of the third layer. The first blended region includes aluminum atoms drawn from the first layer into at least the second layer. The semiconductor device further includes a second blended region beneath the second portion of the third layer. The second blended region includes aluminum atoms drawn from the first layer into at least the second layer. The semiconductor device also includes a source contact and a drain contact.
摘要翻译：半导体器件包括衬底，衬底上的第一层，第一层上的第二层和第二层上的第三层。第三层具有第一部分和第二部分。第三层的第一部分与第三层的第二部分分离。半导体器件还包括在第三层的第一部分下方的第一混合区域。第一共混区域包括从第一层吸收到至少第二层的铝原子。半导体器件还包括在第三层的第二部分下方的第二混合区域。第二共混区域包括从第一层被抽吸到至少第二层的铝原子。半导体器件还包括源极接触和漏极接触。

9. 发明申请

US20160035932A1 NANO-STRUCTURED LIGHT-EMITTING DEVICE AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：纳米结构发光装置及其制造方法
公开(公告)号：US20160035932A1
公开(公告)日：2016-02-04
申请号：US14879013
申请日：2015-10-08
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Nam-goo CHA , Dong-ho KIM , Geon-wook YOO , Dong-hoon LEE
IPC分类号： H01L33/00 , H01L33/44 , H01L33/46 , H01L33/06 , H01L33/24
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/002 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/44 , H01L33/46 , H01L2933/0025
摘要： A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
摘要翻译：一种纳米结构的发光器件，包括第一半导体层; 形成在第一半导体层上的纳米结构。纳米结构包括纳米孔，以及形成在纳米孔的表面上并且其表面被平坦化的有源层和第二半导体层。导电层包围纳米结构的侧面，第一电极电连接到第一半导体层，第二电极电连接到导电层。

10. 发明授权

US09209352B2 Surface-passivated silicon quantum dot phosphors 有权
标题翻译：表面钝化硅量子点荧光粉
公开(公告)号：US09209352B2
公开(公告)日：2015-12-08
申请号：US14361955
申请日：2012-11-30
申请人： University of Washington through its Center for Commercialization
发明人： Chang-Ching Tu , Guozhong Cao , Lih Y. Lin
IPC分类号： H01J1/62 , H01J63/04 , H01L33/06 , C09K11/02 , C09K11/59 , H01L33/00 , H01L33/44 , H01L33/56 , H01L33/50
CPC分类号： H01L33/06 , C09K11/02 , C09K11/025 , C09K11/59 , H01L33/002 , H01L33/0054 , H01L33/44 , H01L33/50 , H01L33/56
摘要： Phosphors formed using silicon nanoparticles are provided. The phosphors exhibit bright fluorescence and high quantum yield, making them ideal for lighting applications. Methods for making the silicon phosphors are also provided, along with lighting devices that incorporate the silicon phosphors.
摘要翻译：提供了使用硅纳米颗粒形成的荧光体。荧光体表现出明亮的荧光和高的量子产率，使其成为照明应用的理想选择。还提供了制造硅磷光体的方法以及掺入硅磷光体的照明装置。

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