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1. 发明授权

US08847266B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08847266B2
公开(公告)日：2014-09-30
申请号：US12003886
申请日：2008-01-03
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

2. 发明授权

US08263987B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US08263987B2
公开(公告)日：2012-09-11
申请号：US13163107
申请日：2011-06-17
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

3. 发明授权

US07985976B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
公开(公告)号：US07985976B2
公开(公告)日：2011-07-26
申请号：US12757557
申请日：2010-04-09
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

4. 发明授权

US07935974B2 White light emitting device 有权
标题翻译：白色发光装置
公开(公告)号：US07935974B2
公开(公告)日：2011-05-03
申请号：US12399619
申请日：2009-03-06
申请人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Myong Soo Cho
发明人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.
摘要翻译：本发明涉及使用晶片接合或金属接合的单片白光发光器件。在本发明中，提供导电基座。第一发光体通过金属层粘合在导电基座上。在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。此外，在导电基板的局部区域上形成第二发光体。在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。

5. 发明申请

US20080135859A1 Vertical structure led device and method of manufacturing the same 有权
标题翻译：垂直结构led器件及其制造方法
公开(公告)号：US20080135859A1
公开(公告)日：2008-06-12
申请号：US11987712
申请日：2007-12-04
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

6. 发明授权

US09018666B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09018666B2
公开(公告)日：2015-04-28
申请号：US12728853
申请日：2010-03-22
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

7. 发明授权

US08309970B2 Vertical structure LED device and method of manufacturing the same 有权
标题翻译：垂直结构LED装置及其制造方法
公开(公告)号：US08309970B2
公开(公告)日：2012-11-13
申请号：US12767324
申请日：2010-04-26
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

8. 发明申请

US20100200867A1 VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直结构LED器件及其制造方法
公开(公告)号：US20100200867A1
公开(公告)日：2010-08-12
申请号：US12767324
申请日：2010-04-26
申请人： Myong Soo CHO , Ki Yeol PARK , Sang Yeob SONG , Si Hyuk LEE , Pun Jae CHOI
发明人： Myong Soo CHO , Ki Yeol PARK , Sang Yeob SONG , Si Hyuk LEE , Pun Jae CHOI
IPC分类号： H01L33/30
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

9. 发明申请

US20100109035A1 COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：化合物半导体发光装置及其制造方法
公开(公告)号：US20100109035A1
公开(公告)日：2010-05-06
申请号：US12418149
申请日：2009-04-03
申请人： Myong Soo CHO , Ki Yeol PARK , Pun Jae Choi
发明人： Myong Soo CHO , Ki Yeol PARK , Pun Jae Choi
IPC分类号： H01L33/00 , H01L21/363
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译：本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。

10. 发明申请

US20100109026A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100109026A1
公开(公告)日：2010-05-06
申请号：US12266300
申请日：2008-11-06
申请人： Grigory ONUSHKIN , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory ONUSHKIN , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20 , H01L33/385
摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

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