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1. 发明授权

US09051641B2 Cobalt deposition on barrier surfaces 有权
标题翻译：阻挡表面上的钴沉积
公开(公告)号：US09051641B2
公开(公告)日：2015-06-09
申请号：US12201976
申请日：2008-08-29
申请人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

2. 发明授权

US08764961B2 Cu surface plasma treatment to improve gapfill window 失效
标题翻译： Cu表面等离子体处理改善填缝窗口
公开(公告)号：US08764961B2
公开(公告)日：2014-07-01
申请号：US12256418
申请日：2008-10-22
申请人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
发明人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
IPC分类号： C25D5/34 , C25D7/12
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。掺杂剂主要并入到场区域上的导电种子层中。导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成在开口。

3. 发明授权

US5972178A Continuous process for forming improved titanium nitride barrier layers 失效
标题翻译：用于形成改进的氮化钛阻挡层的连续工艺
公开(公告)号：US5972178A
公开(公告)日：1999-10-26
申请号：US481550
申请日：1995-06-07
申请人： Murali K. Narasimhan , Kenny King-Tai Ngan , Nitin Khurana , Bradley O. Stimson
发明人： Murali K. Narasimhan , Kenny King-Tai Ngan , Nitin Khurana , Bradley O. Stimson
IPC分类号： C01G23/00 , C23C14/06 , C23C14/16 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , C23C14/34
CPC分类号： H01L21/76843 , C23C14/0641 , C23C14/0676 , C23C14/165
摘要： A continuous process for the deposition of robust titanium-containing barrier layers comprises sputtering in a single substrate sputtering chamber a first layer of titanium, sputtering a layer of titanium nitride thereover, treating the titanium nitride layer with a plasma containing oxygen while continuing to sputter the titanium target to deposit a thin layer of TiON, and finally sputtering a layer of titanium over the titanium nitride. The latter step removes impurities from the titanium target, preventing poisoning of the target. Thus subsequent substrates can be continuously processed in said chamber without degrading the barrier properties or poisoning the titanium target.
摘要翻译：用于沉积坚固的含钛阻挡层的连续方法包括在单个基板溅射室中溅射第一层钛，在其上溅射氮化钛层，用含有氧的等离子体处理氮化钛层，同时继续溅射钛靶以沉积TiON薄层，最后在钛氮化物上溅射一层钛。后一步从钛靶去除杂质，防止靶物中毒。因此，可以在所述室中连续处理后续的基板，而不会降低阻挡性能或使钛靶中毒。

4. 发明授权

US08642473B2 Methods for contact clean 有权
标题翻译：接触清洁方法
公开(公告)号：US08642473B2
公开(公告)日：2014-02-04
申请号：US13411398
申请日：2012-03-02
申请人： Mei Chang , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali K. Narasimhan
发明人： Mei Chang , Linh Thanh , Bo Zheng , Arvind Sundarrajan , John C. Forster , Umesh M. Kellkar , Murali K. Narasimhan
IPC分类号： H01L21/311
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814 , H01L21/76829
摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.
摘要翻译：提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。此外，该方法和装置还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸。

5. 发明申请

US20090053426A1 COBALT DEPOSITION ON BARRIER SURFACES 有权
标题翻译：铜棒沉积在阻挡层表面上
公开(公告)号：US20090053426A1
公开(公告)日：2009-02-26
申请号：US12201976
申请日：2008-08-29
申请人： JIANG LU , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： JIANG LU , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , B05D3/06
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

6. 发明申请

US20130109172A1 HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS 失效
标题翻译：高温钨钢冶金工艺
公开(公告)号：US20130109172A1
公开(公告)日：2013-05-02
申请号：US13660463
申请日：2012-10-25
申请人： JOSHUA COLLINS , Murali K. Narasimhan , Jingjing Liu , Sang-Hyeob Lee , Kai Wu , Avgerinos V. Gelatos
发明人： JOSHUA COLLINS , Murali K. Narasimhan , Jingjing Liu , Sang-Hyeob Lee , Kai Wu , Avgerinos V. Gelatos
IPC分类号： H01L21/768
CPC分类号： H01L21/76876 , H01L21/743 , H01L21/76814 , H01L21/76841 , H01L21/76843 , H01L21/76861 , H01L21/76864 , H01L21/76877 , H01L23/53266 , H01L27/10885 , H01L27/10891 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.
摘要翻译：本发明的实施方案提供了一种用于沉积含钨材料的改进方法。在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层含有氮化钨和碳。该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料））。随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

7. 发明申请

US20120237693A1 IN-SITU CLEAN PROCESS FOR METAL DEPOSITION CHAMBERS 审中-公开
标题翻译：金属沉积池的现场清洁工艺
公开(公告)号：US20120237693A1
公开(公告)日：2012-09-20
申请号：US13422425
申请日：2012-03-16
申请人： Michael Jackson , Song-Moon Suh , Arvind Sundarajjan , Murali K. Narasimhan , Sriskantharajah Thirunavukarasu
发明人： Michael Jackson , Song-Moon Suh , Arvind Sundarajjan , Murali K. Narasimhan , Sriskantharajah Thirunavukarasu
IPC分类号： B05D3/06 , B05D3/14 , B05D3/04
CPC分类号： C23C16/4405
摘要： Embodiments of the invention include methods for in-situ chamber dry clean for metal deposition chambers. In one embodiment, a method for in-situ chamber dry clean after a metal deposition process includes placing a substrate in a processing chamber, performing a metal deposition process on the substrate in the processing chamber, removing the substrate from the support pedestal, and performing an in-situ cleaning process by supplying a cleaning gas containing H2 to the processing chamber while a dummy substrate is disposed in the processing chamber
摘要翻译：本发明的实施例包括用于金属沉积室的原位室干洗的方法。在一个实施例中，在金属沉积工艺之后的原位室干洗的方法包括将衬底放置在处理室中，在处理室中的衬底上执行金属沉积工艺，从支撑基座移除衬底，以及执行通过在处理室中设置虚设基板的同时向处理室供给含有H 2的清洗气体的原位清洗处理

8. 发明授权

US07050160B1 Process and apparatus for integrating sheet resistance measurements and reflectance measurements of a thin film in a common apparatus 有权
标题翻译：用于在普通设备中集成薄膜电阻测量和薄膜反射测量的方法和装置
公开(公告)号：US07050160B1
公开(公告)日：2006-05-23
申请号：US10407669
申请日：2003-04-03
申请人： Walter H. Johnson , Jagadish Kalyanam , Shankar Krishnan , Murali K. Narasimhan
发明人： Walter H. Johnson , Jagadish Kalyanam , Shankar Krishnan , Murali K. Narasimhan
IPC分类号： G01N21/00
CPC分类号： G01N21/8422 , G01B7/06 , G01B11/0625 , G01N21/55
摘要： A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially. By deriving the resistivity of the thin film from the measured reflectance at any particular region of the thin film surface, the thickness of the thin film, at that region of the film, may be obtained by dividing the derived resistivity by the measured sheet resistance for that same region.
摘要翻译：用于在公共装置中测量诸如金属膜或掺杂半导体的薄膜的反射率和薄层电阻的方法包括：将来自辐射源的辐射束引导到公共装置上的表面的一部分上感测从薄膜表面反射的辐射量，并且在薄膜表面的与或相邻的薄膜的表面的一部分处的薄膜电阻测量装置接触薄膜表面到由辐射束接触的薄膜的部分以测量薄膜的薄层电阻。作为示例，薄层电阻测量装置可以包括4点探针或涡流测量装置。相应的测量可以同时或顺序地进行。通过从薄膜表面的任何特定区域处的测量的反射率导出薄膜的电阻率，可以通过将导电电阻率除以测得的薄层电阻值来获得薄膜的该薄膜的该区域的厚度同一地区。

9. 发明申请

US20110315319A1 PRE-CLEAN CHAMBER WITH REDUCED ION CURRENT 审中-公开
标题翻译：具有降低离子电流的前清洁室
公开(公告)号：US20110315319A1
公开(公告)日：2011-12-29
申请号：US13166213
申请日：2011-06-22
申请人： JOHN C. FORSTER , TAE HONG HA , MURALI K. NARASIMHAN , XINYU FU , ARVIND SUNDARRAJAN , XIAOXI GUO
发明人： JOHN C. FORSTER , TAE HONG HA , MURALI K. NARASIMHAN , XINYU FU , ARVIND SUNDARRAJAN , XIAOXI GUO
IPC分类号： B08B5/00
CPC分类号： H01J37/32082
摘要： Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底处理系统可以包括具有接收等离子体的第一体积和用于处理衬底的第二体积的处理室; 设置在所述第二体积中的基板支撑件; 以及设置在第一体积和第二体积之间的处理室中的等离子体过滤器，使得形成在第一体积中的等离子体仅能够通过等离子体过滤器从第一体积流到第二体积。在一些实施例中，衬底处理系统包括耦合到处理室的处理套件，其中等离子体过滤器设置在处理套件中。

10. 发明申请

US20100096273A1 CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW 失效
标题翻译： CU表面等离子体处理，以改善GAPFILL WINDOW
公开(公告)号：US20100096273A1
公开(公告)日：2010-04-22
申请号：US12256418
申请日：2008-10-22
申请人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
发明人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
IPC分类号： H01L21/288
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。掺杂剂主要并入到场区域上的导电种子层中。导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成在开口。

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