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1. 发明授权

US08927423B2 Methods for annealing a contact metal layer to form a metal silicidation layer 有权
标题翻译：退火接触金属层以形成金属硅化层的方法
公开(公告)号：US08927423B2
公开(公告)日：2015-01-06
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

2. 发明授权

US08637410B2 Method for metal deposition using hydrogen plasma 失效
标题翻译：使用氢等离子体的金属沉积方法
公开(公告)号：US08637410B2
公开(公告)日：2014-01-28
申请号：US13082968
申请日：2011-04-08
申请人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
发明人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
IPC分类号： H01L21/31
CPC分类号： C23C16/08 , C23C16/45542 , H01L21/28079 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76843 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.
摘要翻译：提供了使用CVD和ALD技术形成和处理纯金属层的方法。在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。还提供了防止氢等离子体渗透金属前体层的方法。

3. 发明申请

US20130316533A1 METHOD FOR REMOVING NATIVE OXIDE AND ASSOCIATED RESIDUE FROM A SUBSTRATE 有权
标题翻译：从基板上去除原有氧化物和相关残留物的方法
公开(公告)号：US20130316533A1
公开(公告)日：2013-11-28
申请号：US13906543
申请日：2013-05-31
申请人： Bo ZHENG , Arvind SUNDARRAJAN , Xinyu FU
发明人： Bo ZHENG , Arvind SUNDARRAJAN , Xinyu FU
IPC分类号： H01L21/768 , H01L21/02
CPC分类号： H01L21/02063 , H01J37/32082 , H01L21/02057 , H01L21/0206 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/743 , H01L21/768
摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.
摘要翻译：通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜，含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

4. 发明授权

US08580630B2 Methods for forming a metal gate structure on a substrate 失效
标题翻译：在基板上形成金属栅极结构的方法
公开(公告)号：US08580630B2
公开(公告)日：2013-11-12
申请号：US13278335
申请日：2011-10-21
申请人： Jianxin Lei , Xinyu Fu , Srinivas Gandikota , Jian Z. Ren
发明人： Jianxin Lei , Xinyu Fu , Srinivas Gandikota , Jian Z. Ren
IPC分类号： H01L21/8238
CPC分类号： H01L21/28088 , H01L29/4966
摘要： Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and depositing a metal gate layer atop dielectric layer.
摘要翻译：本文提供了在基板上形成金属栅极结构的方法。在一些实施例中，在衬底上形成具有介电层的衬底上形成金属栅极结构的方法可以包括沉积金属层，同时提供包含氧的工艺气体，以在电介质层的顶部形成氧掺杂的功函数层; 以及在电介质层顶上沉积金属栅极层。

5. 发明申请

US20130295759A1 Methods For Manufacturing Metal Gates 有权
标题翻译：制造金属门的方法
公开(公告)号：US20130295759A1
公开(公告)日：2013-11-07
申请号：US13865285
申请日：2013-04-18
申请人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
发明人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
IPC分类号： H01L29/66
CPC分类号： H01L29/66477 , H01L21/28088 , H01L21/3221 , H01L21/823821 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
摘要翻译：提供了适用于FinFET结构的金属栅极的方法。本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。可以首先沉积PMOS或NMOS。

6. 发明申请

US20130221445A1 Atomic Layer Deposition Methods For Metal Gate Electrodes 有权
标题翻译：金属栅电极的原子层沉积方法
公开(公告)号：US20130221445A1
公开(公告)日：2013-08-29
申请号：US13771236
申请日：2013-02-20
申请人： Yu Lei , Srinivas Gandikota , Xinyu Fu , Wei Tang , Atif Noori
发明人： Yu Lei , Srinivas Gandikota , Xinyu Fu , Wei Tang , Atif Noori
IPC分类号： H01L21/28 , H01L29/49
CPC分类号： H01L21/28008 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517
摘要： Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.
摘要翻译：提供了利用掺杂有Si，Al，Ga，Ge，In和/或Hf的TiN和/或TaN膜的器件和方法。这种膜可以用作高k电介质盖层，PMOS功函数层，铝屏障层和/或氟屏障。 TiNN，TaSiN，TiAlN，TaAlN，TiGaN，TaGaN，TiGeN，TaGeN，TiInN，TaInN，TiHfN或TaHfN膜可以用于传统上使用TiN和/或TaN膜的场合，或者它们可以与TiN和/ 或TaN。

7. 发明授权

US08168543B2 Methods of forming a layer for barrier applications in an interconnect structure 有权
标题翻译：在互连结构中形成屏障应用层的方法
公开(公告)号：US08168543B2
公开(公告)日：2012-05-01
申请号：US12562607
申请日：2009-09-18
申请人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
发明人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
IPC分类号： H01L21/311
CPC分类号： H01L21/76846 , C23C14/0057 , C23C14/5853 , H01L21/2855 , H01L21/76856
摘要： Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.
摘要翻译：提供形成阻挡层的方法。在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）室中，将至少两种反应性气体和惰性气体供应到PVD室中，在存在的情况下从设置在处理室中的靶溅射源材料的由所述气体混合物形成的等离子体，并且从所述源材料在所述衬底上形成含金属的电介质层。在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

8. 发明申请

US20110315319A1 PRE-CLEAN CHAMBER WITH REDUCED ION CURRENT 审中-公开
标题翻译：具有降低离子电流的前清洁室
公开(公告)号：US20110315319A1
公开(公告)日：2011-12-29
申请号：US13166213
申请日：2011-06-22
申请人： JOHN C. FORSTER , TAE HONG HA , MURALI K. NARASIMHAN , XINYU FU , ARVIND SUNDARRAJAN , XIAOXI GUO
发明人： JOHN C. FORSTER , TAE HONG HA , MURALI K. NARASIMHAN , XINYU FU , ARVIND SUNDARRAJAN , XIAOXI GUO
IPC分类号： B08B5/00
CPC分类号： H01J37/32082
摘要： Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底处理系统可以包括具有接收等离子体的第一体积和用于处理衬底的第二体积的处理室; 设置在所述第二体积中的基板支撑件; 以及设置在第一体积和第二体积之间的处理室中的等离子体过滤器，使得形成在第一体积中的等离子体仅能够通过等离子体过滤器从第一体积流到第二体积。在一些实施例中，衬底处理系统包括耦合到处理室的处理套件，其中等离子体过滤器设置在处理套件中。

9. 发明授权

US07615489B1 Method for forming metal interconnects and reducing metal seed layer overhang 失效
标题翻译：用于形成金属互连和还原金属种子层悬垂的方法
公开(公告)号：US07615489B1
公开(公告)日：2009-11-10
申请号：US12256243
申请日：2008-10-22
申请人： Xinyu Fu
发明人： Xinyu Fu
IPC分类号： H01L23/522
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76804 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L23/53223 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method for forming metal interconnects on a substrate is described. A substrate with a dielectric layer is positioned within a processing chamber. A first barrier layer is deposited on the dielectric layer and within a plurality of vias of the dielectric layer, wherein the first barrier layer includes beveled edges extending from a field of the substrate to a sidewall surface of each via. The first barrier layer and the dielectric layer are etched to form a recess at each beveled edge. A second barrier layer is deposited over the recess. A metal seed layer deposited over the first barrier layer, the second barrier layer, and within the recess.
摘要翻译：描述了在基板上形成金属互连的方法。具有电介质层的衬底位于处理室内。第一阻挡层沉积在电介质层上并且在电介质层的多个通孔内，其中第一阻挡层包括从衬底的场延伸到每个通孔的侧壁表面的斜边。蚀刻第一阻挡层和电介质层以在每个斜边处形成凹部。第二阻挡层沉积在凹部上。沉积在第一阻挡层，第二阻挡层和凹部内的金属籽晶层。

10. 发明申请

US20090227105A1 METHODS OF FORMING A LAYER FOR BARRIER APPLICATIONS IN AN INTERCONNECT STRUCTURE 有权
标题翻译：在互连结构中形成障碍物应用层的方法
公开(公告)号：US20090227105A1
公开(公告)日：2009-09-10
申请号：US12041804
申请日：2008-03-04
申请人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
发明人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
IPC分类号： H01L21/44 , H01L21/285
CPC分类号： H01L21/76846 , C23C14/0057 , C23C14/5853 , H01L21/2855 , H01L21/76856
摘要： Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD processing chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.
摘要翻译：提供形成阻挡层的方法。在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）腔室中，将至少两种反应性气体和惰性气体供应到PVD处理腔室中，将来自设置在处理室中的靶的源材料溅射在存在由气体混合物形成的等离子体，并且从源材料在衬底上形成含金属的电介质层。在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

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