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1. 发明授权

US09418890B2 Method for tuning a deposition rate during an atomic layer deposition process 有权
标题翻译：在原子层沉积过程中调整沉积速率的方法
公开(公告)号：US09418890B2
公开(公告)日：2016-08-16
申请号：US14279260
申请日：2014-05-15
申请人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
发明人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
IPC分类号： H01L21/768 , C23C16/455 , C23C16/52
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

2. 发明授权

US09410123B2 Hemangio colony forming cells and non-engrafting hemangio cells 有权
标题翻译：血管瘤集落形成细胞和非移植血管瘤细胞
公开(公告)号：US09410123B2
公开(公告)日：2016-08-09
申请号：US12991096
申请日：2009-05-06
申请人： Robert Lanza , Shi-Jiang Lu
发明人： Robert Lanza , Shi-Jiang Lu
IPC分类号： C12N5/00 , C12N5/0789
CPC分类号： C12N5/0647 , A61K35/12 , A61K35/28 , A61K35/44 , A61K38/13 , A61K45/06 , A61K2035/124 , A61N5/10 , C12N2500/90 , C12N2501/115 , C12N2501/125 , C12N2501/14 , C12N2501/145 , C12N2501/155 , C12N2501/165 , C12N2501/26 , C12N2506/02 , C12N2506/45
摘要： Methods of generating and expanding human hemangio-colony forming cells and non-engrafting hemangio cells in vitro and methods of expanding and using such cells are disclosed. The methods permit the production of large numbers of hemangio-colony forming cells, non-engrafting hemangio cells as well as derivative cells, such as hematopoietic and endothelial cells. The cells obtained by the methods disclosed may be used for a variety of research, clinical, and therapeutic applications. Human non-engrafting hemangio cells are a novel progenitor cell population that is related to but distinct from the hemangioblast and human hemangio-colony forming cells. The invention also provides compositions, preparations, and solutions comprising hemangio-colony forming cells, non-engrafting hemangio cells or cells differentiated therefrom. The compositions, preparations, and solutions include cryopreserved preparations and substantially purified preparations, as well as mixed compositions formulated in combination with related hemangioblast progenitor cell types that can engraft into the bone marrow.
摘要翻译：公开了在体外产生和扩大人血管瘤集落形成细胞和非移植血管瘤细胞的方法以及扩增和使用这些细胞的方法。该方法允许生产大量的血管瘤集落形成细胞，非移植血管瘤细胞以及衍生细胞，如造血细胞和内皮细胞。通过所公开的方法获得的细胞可用于各种研究，临床和治疗应用。人类非移植血管瘤细胞是与成血管细胞和人类血管瘤集落形成细胞相关但不同的新型祖细胞群。本发明还提供包含血管瘤集落形成细胞，非移植血管瘤细胞或与其分化的细胞的组合物，制剂和溶液。组合物，制剂和溶液包括冷冻保存的制剂和基本纯化的制剂，以及与可以移入骨髓的相关成血管细胞祖细胞类型组合配制的混合组合物。

3. 发明授权

US09051641B2 Cobalt deposition on barrier surfaces 有权
标题翻译：阻挡表面上的钴沉积
公开(公告)号：US09051641B2
公开(公告)日：2015-06-09
申请号：US12201976
申请日：2008-08-29
申请人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

4. 发明申请

US20140248772A1 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS 有权
标题翻译：在原子层沉积过程中调节沉积速率的方法
公开(公告)号：US20140248772A1
公开(公告)日：2014-09-04
申请号：US14279260
申请日：2014-05-15
申请人： Paul MA , Joseph F. AUBUCHON , Jiang LU , Mei CHANG
发明人： Paul MA , Joseph F. AUBUCHON , Jiang LU , Mei CHANG
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

5. 发明申请

US20110286978A1 Genetically Intact Induced Pluripotent Cells Or Transdifferentiated Cells And Methods For The Production Thereof 审中-公开
标题翻译：基因完整诱导多能细胞或转分化细胞及其生产方法
公开(公告)号：US20110286978A1
公开(公告)日：2011-11-24
申请号：US12787175
申请日：2010-05-25
申请人： Irina V. Klimanskaya , Shi-Jiang Lu , Robert Lanza , Michael D. West , Karen B. Chapman , Roy Geoffrey Sargent , Raymond Page , Tanja Dominko , Christopher Malcuit
发明人： Irina V. Klimanskaya , Shi-Jiang Lu , Robert Lanza , Michael D. West , Karen B. Chapman , Roy Geoffrey Sargent , Raymond Page , Tanja Dominko , Christopher Malcuit
IPC分类号： A61K35/12 , C12N5/00 , C12N15/01
CPC分类号： C12N5/0696 , C07K2319/10 , C07K2319/60 , C07K2319/71 , C12N2501/602 , C12N2501/603 , C12N2501/604 , C12N2501/605 , C12N2501/606 , C12N2501/608
摘要： The present disclosure relates to methods for dedifferentiating and transdifferentiating recipient cells, preferably human somatic cells. These methods minimize the risk of undesired genome sequence alteration. These methods employ reprogramming factors, which may be used alone or in certain combinations with one another. These methods have application especially in the context of cell-based therapies, establishment of cell lines, and the production of genetically modified cells.
摘要翻译：本公开涉及用于去分化和转分化受体细胞，优选人体细胞的方法。这些方法使不希望的基因组序列改变的风险最小化。这些方法采用重编程因子，其可以单独使用或以某种组合使用。这些方法特别适用于基于细胞的疗法，细胞系的建立以及转基因细胞的生产。

6. 发明授权

US07290723B1 Aerosol splitter for ELSD 失效
标题翻译： ELSD气溶胶分离器
公开(公告)号：US07290723B1
公开(公告)日：2007-11-06
申请号：US10784497
申请日：2004-02-23
申请人： Jiang Lu , Samuel Frederick Azlein
发明人： Jiang Lu , Samuel Frederick Azlein
IPC分类号： B05B1/24 , B05B7/16 , B05B1/26 , B05B1/00 , A62C31/02
CPC分类号： G01N30/84 , G01N30/74 , G01N2030/847 , G01N2030/8494 , G01N21/47
摘要： The present invention is directed to a device for splitting a propelled aerosol cloud. The device utilizes a curved spray chamber and a thermal technique to divert any desired portion of the aerosol to waste. The remainder of the aerosol is made available to an ELSD or similar instrument for analysis.
摘要翻译：本发明涉及一种用于分离推进气溶胶云的装置。该装置使用弯曲的喷雾室和热技术将任何所需部分的气溶胶转移到废物中。气溶胶的其余部分可用于ELSD或类似仪器进行分析。

7. 发明授权

US5147581A Evaporative air cooler 失效
标题翻译：蒸发式空气冷却器
公开(公告)号：US5147581A
公开(公告)日：1992-09-15
申请号：US650209
申请日：1991-02-04
申请人： Qiu-Jiang Lu
发明人： Qiu-Jiang Lu
IPC分类号： F24F6/16
CPC分类号： F24F6/16
摘要： An evaporative air cooler with a rotary fan blowing and evaporating droplets generated by an impeller, which shares the same motor shaft with the rotary fan. The evaporative air cooler comprises a housing (1) having rear inlets (23), front outlets (3), and a motor-supporting plate (6). An electric motor (7) is vertically mounted to the plate with its rotating shaft being directed downward and connected to a rotary fan (9). The rotary fan sucks, blows and evaporate droplets produced by an impeller (14) with blades (11) and a fluid-sucking tube (13).
摘要翻译：具有旋转风扇的蒸发式空气冷却器，其由叶轮产生并与旋转风扇共享相同的电动机轴。蒸发空气冷却器包括具有后入口（23），前出口（3）和马达支撑板（6）的壳体（1）。电动机（7）垂直安装在板上，其旋转轴向下并连接到旋转风扇（9）。旋转风扇用叶片（11）和吸液管（13）吸收，吹动和蒸发由叶轮（14）产生的液滴。

8. 发明申请

US20170140646A1 IN-VEHICLE GARAGE DOOR MONITOR 审中-公开
公开(公告)号：US20170140646A1
公开(公告)日：2017-05-18
申请号：US15340738
申请日：2016-11-01
申请人： Jiang Lu , Fangqin Liu
发明人： Jiang Lu , Fangqin Liu
IPC分类号： G08G1/0962
CPC分类号： G08B21/18 , E05F15/77
摘要： An in-vehicle garage door monitoring system. An example monitoring system includes a sensor mounted near a garage door to determine a status of the garage door. The example monitoring system also includes a transmitter mounted near the garage door and communicatively coupled with the sensor, the transmitter issuing a signal corresponding to the status of the garage door. The example monitoring system also includes a receiver at the vehicle to receive the signal from the transmitter, the receiver issuing at least one notification to an occupant of the vehicle indicating the status of the garage door.

9. 发明申请

US20170021767A1 LASER GUIDED PARKING ASSISTANCE DEVICE 审中-公开
标题翻译：激光导向停车辅助装置
公开(公告)号：US20170021767A1
公开(公告)日：2017-01-26
申请号：US15216987
申请日：2016-07-22
申请人： Jiang Lu , Fangqin Liu
发明人： Jiang Lu , Fangqin Liu
IPC分类号： B60Q9/00 , F21S9/03 , F21V23/04 , G05D1/02 , H05B37/02
CPC分类号： B60Q9/004 , B62D15/027 , G05D1/024 , H05B33/0806 , H05B33/0842
摘要： A laser guided parking assistance device and methods of operation are disclosed. An example laser guided parking assistance device includes a tilt switch to detect a vertical orientation of a horizontal orientation. The laser guided parking assistance device also includes a laser to emit a laser light beam in response to the tilt switch detecting the horizontal orientation. In an example, a laser guided parking assistance device is configured as a circuit including a battery power source, a laser diode connected in series with the battery power source, and a first tilt switch connected between the battery power source and the laser diode. The tilt switch opens in a vertical position to cut electrical power from the battery power source to the laser diode The first tilt switch closes in a horizontal position to connect electrical power from the battery power source to the laser diode.
摘要翻译：公开了一种激光引导停车辅助装置和操作方法。示例性激光引导停车辅助装置包括用于检测水平取向的垂直取向的倾斜开关。激光引导停车辅助装置还包括激光器，响应于倾斜开关检测水平方向而发射激光束。在一个示例中，激光引导停车辅助装置被配置为包括电池电源，与电池电源串联的激光二极管和连接在电池电源和激光二极管之间的第一倾斜开关的电路。倾斜开关处于垂直位置，以将电力从电池电源切割到激光二极管。第一倾斜开关处于水平位置，以将来自电池电源的电力连接到激光二极管。

10. 发明申请

US20130023079A1 FABRICATION OF LIGHT EMITTING DIODES (LEDS) USING A DEGAS PROCESS 审中-公开
标题翻译：使用DEGAS工艺制造发光二极管（LED）
公开(公告)号：US20130023079A1
公开(公告)日：2013-01-24
申请号：US13552344
申请日：2012-07-18
申请人： Sang Won Kang , Jiang Lu , Hua Chung , Juno Yu-Ting Huang , Wei-Yung Hsu
发明人： Sang Won Kang , Jiang Lu , Hua Chung , Juno Yu-Ting Huang , Wei-Yung Hsu
IPC分类号： H01L33/04
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02656 , H01L33/0095
摘要： Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.
摘要翻译：描述了使用脱气工艺制造发光二极管的方法。例如，一种方法包括提供LED的部分形成的III-V族材料层堆叠。通过脱气工艺将污染物从部分形成的III-V族材料层堆中除去。然后完成LED的III-V族材料层堆叠的形成。

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