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1. 发明申请

US20100096273A1 CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW 失效
标题翻译： CU表面等离子体处理，以改善GAPFILL WINDOW
公开(公告)号：US20100096273A1
公开(公告)日：2010-04-22
申请号：US12256418
申请日：2008-10-22
申请人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
发明人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
IPC分类号： H01L21/288
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。掺杂剂主要并入到场区域上的导电种子层中。导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成在开口。

2. 发明授权

US08764961B2 Cu surface plasma treatment to improve gapfill window 失效
标题翻译： Cu表面等离子体处理改善填缝窗口
公开(公告)号：US08764961B2
公开(公告)日：2014-07-01
申请号：US12256418
申请日：2008-10-22
申请人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
发明人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
IPC分类号： C25D5/34 , C25D7/12
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。掺杂剂主要并入到场区域上的导电种子层中。导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成在开口。

3. 发明授权

US07659204B2 Oxidized barrier layer 失效
标题翻译：氧化屏障层
公开(公告)号：US07659204B2
公开(公告)日：2010-02-09
申请号：US11691302
申请日：2007-03-26
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/0036 , C23C14/0641 , C23C14/083 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
摘要翻译：在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

4. 发明申请

US20050006222A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050006222A1
公开(公告)日：2005-01-13
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768 , C23C14/00 , C23C14/32 , C25B9/00
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

5. 发明授权

US06887786B2 Method and apparatus for forming a barrier layer on a substrate 有权
标题翻译：在基板上形成阻挡层的方法和装置
公开(公告)号：US06887786B2
公开(公告)日：2005-05-03
申请号：US10409406
申请日：2003-04-07
申请人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John C. Forster , Jick M. Yu
发明人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John C. Forster , Jick M. Yu
IPC分类号： C23C14/04 , C23C14/06 , C23C14/18 , C23C14/58 , H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/0641 , C23C14/185 , C23C14/5873 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.
摘要翻译：提供了第一种方法，用于通过在（1）形成在基底上的金属特征的基底上溅射沉积氮化钽层而在衬底上形成阻挡层; （2）形成在所述金属特征上的电介质层; 和（3）形成在电介质层中的通孔以暴露金属特征。通孔具有侧壁和底部，宽度为约0.18微米或更小。氮化钽层沉积在通孔的侧壁和底部以及电介质层的场区上; 并且在场区域具有至少约200埃的厚度。第一种方法还包括在相同的室中在衬底上溅射沉积钽层。该钽层的厚度在场区域上小于约100埃。提供其他方面。

6. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

7. 发明授权

US08668816B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08668816B2
公开(公告)日：2014-03-11
申请号：US11933157
申请日：2007-10-31
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

8. 发明申请

US20050255691A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 审中-公开
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050255691A1
公开(公告)日：2005-11-17
申请号：US11184615
申请日：2005-07-19
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

9. 发明申请

US20120181166A1 PVD PROCESS WITH SYNCHRONIZED PROCESS PARAMETERS AND MAGNET POSITION 审中-公开
标题翻译：具有同步工艺参数和磁体位置的PVD工艺
公开(公告)号：US20120181166A1
公开(公告)日：2012-07-19
申请号：US13007228
申请日：2011-01-14
申请人： QIAN LUO , Ye Xu , Tza-Jing Gung , Xianmin Tang
发明人： QIAN LUO , Ye Xu , Tza-Jing Gung , Xianmin Tang
IPC分类号： C23C14/35
CPC分类号： C23C14/345 , C23C14/3492 , C23C14/35 , H01J37/3455
摘要： Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target.
摘要翻译：本发明的实施方案一般涉及物理气相沉积方法的方法。方法通常包括使处理室条件与磁控管的位置同步。当磁控管在目标的第一区域上被扫描时，腔室内的条件被调整到第一组预定的工艺条件。随着磁控管随后在目标的第二区域上扫描，腔室内的条件被调整到与第一组不同的第二组预定过程条件。目标可分为两个以上的区域。通过将磁控管的位置与不同的工艺条件相关联，可以通过减小中心到边缘的不均匀性来改善膜均匀性，例如当磁控管靠近靶的边缘时可能更高的再溅射速率。

10. 发明授权

US08557094B2 Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
标题翻译：具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射
公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

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