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1. 发明申请

US20140252437A1 DEPTH PIXEL INCLUDED IN THREE-DIMENSIONAL IMAGE SENSOR AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME 有权
标题翻译：深度像素包括在三维图像传感器和包括其中的三维图像传感器
公开(公告)号：US20140252437A1
公开(公告)日：2014-09-11
申请号：US14077602
申请日：2013-11-12
申请人： Min-Seok OH , Hae-Kyung KONG , Tae Chan KIM , Jung Chak AHN , Moo Sup LIM
发明人： Min-Seok OH , Hae-Kyung KONG , Tae Chan KIM , Jung Chak AHN , Moo Sup LIM
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14641
摘要： A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.
摘要翻译：深度像素包括光检测区域，第一和第二光栅以及第一和第二浮动扩散区域。光检测区域根据由物体反射的光来收集照片费用。所收集的光电荷基于光检测区域中的内部电场在与第一方向不同的第一方向和第二方向漂移。响应于第一光控制信号激活第一光栅。如果第一光栅被激活，则第一浮动扩散区积累在第一方向漂移的第一光电荷。响应于第一光控制信号激活第二光栅。如果第二光栅被激活，则第二浮动扩散区积累在第二方向漂移的第二光电荷。

2. 发明授权

US08802972B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08802972B2
公开(公告)日：2014-08-12
申请号：US12476645
申请日：2009-06-02
申请人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
发明人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
IPC分类号： H01L31/0224 , H01L31/0376 , H01L31/0368 , H01L31/068 , H01L31/078
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022466 , H01L31/02363 , H01L31/03682 , H01L31/03762 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/078 , H01L31/182 , Y02E10/52 , Y02E10/547 , Y02E10/548
摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
摘要翻译：这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层，第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上第一非单晶半导体层。

3. 发明授权

US08729678B2 Image sensor for stabilizing a black level 有权
标题翻译：用于稳定黑色电平的图像传感器
公开(公告)号：US08729678B2
公开(公告)日：2014-05-20
申请号：US13615451
申请日：2012-09-13
申请人： Eun-Sub Shim , Jung-Chak Ahn , Moo-Sup Lim , Hyung-Jin Bae , Min-Seok Oh
发明人： Eun-Sub Shim , Jung-Chak Ahn , Moo-Sup Lim , Hyung-Jin Bae , Min-Seok Oh
IPC分类号： H01L23/552
CPC分类号： H01L27/14623 , H01L27/1463
摘要： An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.
摘要翻译：图像传感器包括第一像素，第二像素和深沟槽。第一像素形成在半导体衬底的有源区中，并且被配置为测量对应于入射光的光电荷。第二像素形成在半导体衬底的黑 - 黑区域中，并被配置为测量黑色电平。深沟槽在光学黑色区域的边界区域中垂直形成，其中边界区域与有源区域相邻，并且被配置为阻挡来自有源区域的泄漏光和扩散载流子。

4. 发明授权

US08642367B2 Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same 失效
标题翻译：具有改进的可制造性的薄膜晶体管和用于制造包含它的显示面板的方法
公开(公告)号：US08642367B2
公开(公告)日：2014-02-04
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

5. 发明申请

US20140002636A1 METHOD AND DEVICE OF MEASURING THE DISTANCE TO AN OBJECT 有权
标题翻译：测量对象距离的方法和设备
公开(公告)号：US20140002636A1
公开(公告)日：2014-01-02
申请号：US13893812
申请日：2013-05-14
申请人： Han-Soo Lee , Hae-Kyung Kong , Kyung-IL Kim , Min-Seok Oh , Tae-Chan Kim , Moo-Sup Lim
发明人： Han-Soo Lee , Hae-Kyung Kong , Kyung-IL Kim , Min-Seok Oh , Tae-Chan Kim , Moo-Sup Lim
IPC分类号： G01C3/08
CPC分类号： G01S17/36 , G01C3/08
摘要： To measure the distance to points on an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object, a first photo-detection control signal is generated to control the radiation of the optical signal. A mask signal is generated such that the mask signal is activated at least during a shuttering duration for resetting the voltage level at a sensing node (associated with an operation of a previous frame). A second photo-detection control signal is generated based on the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.
摘要翻译：为了通过向对象辐射周期性幅度调制的光信号并检测辐射光信号与来自对象的反射光信号之间的相位差来测量物体上与点的距离，产生第一光检测控制信号控制光信号的辐射。产生掩模信号，使得至少在用于复位感测节点处的电压电平（与先前帧的操作相关联）的快门持续时间期间激活屏蔽信号。基于第一光检测信号和掩模信号产生第二光检测控制信号，使得至少在快门持续时间期间第二光检测信号被去激活或屏蔽。

6. 发明授权

US08608971B2 Method of manufacturing a display substrate 失效
标题翻译：制造显示基板的方法
公开(公告)号：US08608971B2
公开(公告)日：2013-12-17
申请号：US12862580
申请日：2010-08-24
申请人： Hong-Kee Chin , Sang-Gab Kim , Min-Seok Oh
发明人： Hong-Kee Chin , Sang-Gab Kim , Min-Seok Oh
IPC分类号： B29D11/00 , C30B33/00
CPC分类号： H01L27/1288 , G02F1/136204 , H01L27/1244
摘要： A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion. Therefore, excessive etching of the stepped portion may be prevented, so that a short-circuit defect between a metallic pattern and a pixel electrode may be prevented
摘要翻译：一种制造显示基板的方法包括在基底基板上形成包括栅极和存储导体的第一金属图案和开关器件的栅电极，形成栅极绝缘层，形成第二金属图案和包括源极线的沟道部分开关器件的源极和漏极，在第二金属图案上形成钝化层和光致抗蚀剂膜，图案化光致抗蚀剂膜以形成对应于栅极和源极导体和开关器件的第一图案部分，以及第二图案形成在存储线上的部分，蚀刻钝化层和栅极绝缘层，以及使用第一图案部分形成像素电极。因此，可以防止阶梯部分的过度蚀刻，从而可以防止金属图案和像素电极之间的短路缺陷

7. 发明授权

US08539287B2 Method for transmitting control information in wireless communication system 有权
标题翻译：在无线通信系统中发送控制信息的方法
公开(公告)号：US08539287B2
公开(公告)日：2013-09-17
申请号：US12864820
申请日：2009-02-05
申请人： Young Sub Lee , Suk Woo Lee , Min Seok Oh
发明人： Young Sub Lee , Suk Woo Lee , Min Seok Oh
IPC分类号： G06F11/00
CPC分类号： H04L1/0072 , H03M13/13 , H03M13/23 , H03M13/2707 , H03M13/2906 , H03M13/2957 , H03M13/6356 , H03M13/6544 , H04L1/0041 , H04L1/0065 , H04L1/0071 , H04L1/08
摘要： A method for transmitting control information in a wireless communication system is provided. A codeword is generated by performing forward error correction (FEC) encoding on control information to generate. An interleaved code is generated by interleaving the codeword. A combined code is generated by combining the codeword and the interleaved code. A transport block is generated by repeating the combined code and is transmitted.
摘要翻译：提供一种在无线通信系统中发送控制信息的方法。通过对控制信息执行前向纠错（FEC）编码来生成码字以产生码字。通过交织码字来生成交错码。通过组合码字和交错码来产生组合码。传输块通过重复组合的代码并被发送来产生。

8. 发明申请

US20130133729A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130133729A1
公开(公告)日：2013-05-30
申请号：US13562751
申请日：2012-07-31
申请人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Young-Su KIM , Young-Sang PARK
发明人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Young-Su KIM , Young-Sang PARK
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.
摘要翻译：太阳能电池在半导体衬底上包括半导体衬底，第一本征半导体层和第二本征半导体层，第一本征半导体层和第二本征半导体层彼此间隔开，第一导电半导体层和第二本征半导体层分别设置在第一本征半导体层和第二本征半导体层上的导电半导体层以及分别包括在第一导电半导体层和第二导电半导体层上的底层的第一电极和第二电极，底层包括透明导电氧化物和底层上的中间层，中间层包括铜。

9. 发明申请

US20130113059A1 PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US20130113059A1
公开(公告)日：2013-05-09
申请号：US13569142
申请日：2012-08-07
申请人： Nam-Kyu Song , Min-Seok Oh , Yun-Seok Lee , Cho-Young Lee
发明人： Nam-Kyu Song , Min-Seok Oh , Yun-Seok Lee , Cho-Young Lee
IPC分类号： H01L31/0376 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0747 , H01L31/18 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.
摘要翻译：光电器件包括半导体衬底; 在所述半导体衬底的第一表面的第一区域上并含有第一杂质的非晶体第一导电半导体层; 在所述半导体衬底的所述第一表面的第二区域上并含有第二杂质的无定形第二导电半导体层; 以及位于半导体衬底上的第一区域和第二区域之间的间隙钝化层，其中第一导电半导体层也在间隙钝化层上。

10. 发明申请

US20130112253A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20130112253A1
公开(公告)日：2013-05-09
申请号：US13565828
申请日：2012-08-03
申请人： Min-Seok OH , Doo-Youl Lee , Young-Jin KIM , Min PARK , Yun-Seok LEE , Nam-Kyu SONG , Dong-Seop KIM , Cho-Young LEE , Chan-Bin MO , Young-Su KIM , Hoon-Ha JEON , Yeon-Ik JANG , Jun-Ki HONG , Young-Sang PARK , Chan-Yoon JUNG
发明人： Min-Seok OH , Doo-Youl Lee , Young-Jin KIM , Min PARK , Yun-Seok LEE , Nam-Kyu SONG , Dong-Seop KIM , Cho-Young LEE , Chan-Bin MO , Young-Su KIM , Hoon-Ha JEON , Yeon-Ik JANG , Jun-Ki HONG , Young-Sang PARK , Chan-Yoon JUNG
IPC分类号： H01L31/076
CPC分类号： H01L31/03529 , H01L31/0224 , H01L31/022408 , H01L31/022425 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
摘要翻译：一种太阳能电池，包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层，所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。

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