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1. 发明授权

US08643012B2 Display substrate and method for manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08643012B2
公开(公告)日：2014-02-04
申请号：US12952744
申请日：2010-11-23
申请人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/13439 , G02F2201/50
摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.
摘要翻译：形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

2. 发明授权

US08273612B2 Display panel and method of manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US08273612B2
公开(公告)日：2012-09-25
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
发明人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

3. 发明授权

US07888675B2 Thin film transistor array panel and fabrication 有权
标题翻译：薄膜晶体管阵列和制造
公开(公告)号：US07888675B2
公开(公告)日：2011-02-15
申请号：US12099718
申请日：2008-04-08
申请人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
发明人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , G02F2001/13629 , H01L29/458
摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要翻译：本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

4. 发明授权

US07758760B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07758760B2
公开(公告)日：2010-07-20
申请号：US11544987
申请日：2006-10-06
申请人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
IPC分类号： B44C1/22
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O2) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.
摘要翻译：提供薄膜晶体管（TFT）阵列面板及其制造方法。该方法包括在栅极线上形成半导体层和欧姆接触层，在欧姆接触层上形成导电层，在导电层上形成第一感光层图案，使用第一感光层图案蚀刻导电层，作为蚀刻掩模，使用第一感光层图案作为蚀刻掩模，通过含氟气体，含氯气体和氧（O 2）气蚀刻欧姆接触层和半导体层，将第一感光层图案去除预定厚度以形成第二感光层图案，并且使用第二感光层图案蚀刻导电层作为蚀刻掩模以暴露欧姆接触层的一部分。

5. 发明申请

US20090174834A1 LIQUID CRYSTAL DISPLAY AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20090174834A1
公开(公告)日：2009-07-09
申请号：US12188934
申请日：2008-08-08
申请人： Seung-Ha CHOI , Min-Seok Oh , Yu-Gwang Jeong , Hong-Kee Chin , Shin-II Choi , Sang-Gab Kim , Kap-Soo Yoon , Doo-Hee Jung
发明人： Seung-Ha CHOI , Min-Seok Oh , Yu-Gwang Jeong , Hong-Kee Chin , Shin-II Choi , Sang-Gab Kim , Kap-Soo Yoon , Doo-Hee Jung
IPC分类号： G02F1/1343 , G02F1/1368
CPC分类号： G02F1/136227 , G02F1/136213 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1288
摘要： One or more embodiments provide a liquid crystal display (LCD) including a thin-film transistor (TFT) with improved performance and a method of fabricating the LCD. In one embodiment, the LCD includes a gate electrode which is formed on an insulating substrate; an active layer which is formed on the gate electrode; an organic layer which is formed on the active layer and includes a first hole that exposes a source region and a second hole that exposes a drain region; a source electrode which fills the first hole; and a drain electrode which fills the second hole.
摘要翻译：一个或多个实施例提供了包括具有改进性能的薄膜晶体管（TFT）的液晶显示器（LCD）和制造LCD的方法。在一个实施例中，LCD包括形成在绝缘基板上的栅电极; 形成在栅电极上的有源层; 有机层，其形成在有源层上，并且包括露出源极区域的第一孔和露出漏极区域的第二孔; 源电极填充第一孔; 以及填充第二孔的漏电极。

6. 发明授权

US07371621B2 Thin film transistor array panel and fabrication 有权
标题翻译：薄膜晶体管阵列和制造
公开(公告)号：US07371621B2
公开(公告)日：2008-05-13
申请号：US11486330
申请日：2006-07-12
申请人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
发明人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , G02F2001/13629 , H01L29/458
摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要翻译：本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

7. 发明申请

US20070012967A1 Thin film transistor array panel and fabrication 有权
标题翻译：薄膜晶体管阵列和制造
公开(公告)号：US20070012967A1
公开(公告)日：2007-01-18
申请号：US11486330
申请日：2006-07-12
申请人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
发明人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
IPC分类号： H01L31/113
CPC分类号： H01L27/124 , G02F2001/13629 , H01L29/458
摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要翻译：本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

8. 发明申请

US20060192906A1 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060192906A1
公开(公告)日：2006-08-31
申请号：US11356853
申请日：2006-02-17
申请人： Hye-Young Ryu , Jang-Soo Kim , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Hee-Hwan Choe , Shi-Yul Kim
发明人： Hye-Young Ryu , Jang-Soo Kim , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Hee-Hwan Choe , Shi-Yul Kim
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/133345 , G02F1/1362 , G02F2001/136222 , G02F2202/02
摘要： A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
摘要翻译：提供薄膜晶体管阵列面板，其包括栅极线，与栅极线相交的数据线，与栅极和数据线分开的存储电极，连接到栅极和数据线并具有漏极的薄膜晶体管连接到漏电极的像素电极，薄膜晶体管上的第一绝缘层，并且设置在像素电极下方;第二绝缘层，设置在第一绝缘层上，并且具有使存储电极上的第一绝缘层露出的开口。

9. 发明申请

US20060131581A1 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060131581A1
公开(公告)日：2006-06-22
申请号：US11255801
申请日：2005-10-21
申请人： Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Jeong-Min Park , Shi-Yul Kim , Hee-Hwan Choe
发明人： Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Jeong-Min Park , Shi-Yul Kim , Hee-Hwan Choe
IPC分类号： H01L29/04
CPC分类号： H01L29/458 , G02F2001/136236 , H01L27/124 , H01L27/1288
摘要： A method for manufacturing a TFT array panel including forming a gate line having a gate electrode on a insulating layer, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, an ohmic contact on the semiconductor, a data line having a source electrode and a drain electrode apart form the source electrode on the ohmic contact, a passivation layer having a contact hole to expose the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. The drain electrode and the source electrode are formed by a photolithography using a negative photoresist pattern. The negative photoresist pattern includes a first portion having a first thickness corresponding to a channel area, a second portion having a second thickness corresponding to a data line area, and a third portion having a third thickness corresponding to another area.
摘要翻译：一种TFT阵列板的制造方法，包括在绝缘层上形成具有栅电极的栅极线，栅极线上的栅极绝缘层，栅极绝缘层上的半导体，半导体上的欧姆接触，数据线，源电极和漏电极分开形成欧姆接触上的源电极，具有露出漏电极的接触孔的钝化层和通过接触孔连接到漏电极的像素电极。漏电极和源电极通过使用负光致抗蚀剂图案的光刻形成。负型光致抗蚀剂图案包括具有对应于沟道区域的第一厚度的第一部分，具有对应于数据线区域的第二厚度的第二部分和具有对应于另一区域的第三厚度的第三部分。

10. 发明授权

US08642367B2 Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same 失效
标题翻译：具有改进的可制造性的薄膜晶体管和用于制造包含它的显示面板的方法
公开(公告)号：US08642367B2
公开(公告)日：2014-02-04
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

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