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    • 4. 发明授权
    • Thin film transistor array panel and method of manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07758760B2
    • 2010-07-20
    • US11544987
    • 2006-10-06
    • Seung-Ha ChoiMin-Seok OhHong-Kee ChinSang-Gab KimYu-Gwang Jeong
    • Seung-Ha ChoiMin-Seok OhHong-Kee ChinSang-Gab KimYu-Gwang Jeong
    • B44C1/22
    • H01L27/124H01L27/1288H01L29/458H01L29/4908
    • A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O2) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.
    • 提供薄膜晶体管(TFT)阵列面板及其制造方法。 该方法包括在栅极线上形成半导体层和欧姆接触层,在欧姆接触层上形成导电层,在导电层上形成第一感光层图案,使用第一感光层图案蚀刻导电层,作为 蚀刻掩模,使用第一感光层图案作为蚀刻掩模,通过含氟气体,含氯气体和氧(O 2)气蚀刻欧姆接触层和半导体层,将第一感光层图案去除 预定厚度以形成第二感光层图案,并且使用第二感光层图案蚀刻导电层作为蚀刻掩模以暴露欧姆接触层的一部分。