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1. 发明授权

US08642367B2 Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same 失效
标题翻译：具有改进的可制造性的薄膜晶体管和用于制造包含它的显示面板的方法
公开(公告)号：US08642367B2
公开(公告)日：2014-02-04
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

2. 发明授权

US08608971B2 Method of manufacturing a display substrate 失效
标题翻译：制造显示基板的方法
公开(公告)号：US08608971B2
公开(公告)日：2013-12-17
申请号：US12862580
申请日：2010-08-24
申请人： Hong-Kee Chin , Sang-Gab Kim , Min-Seok Oh
发明人： Hong-Kee Chin , Sang-Gab Kim , Min-Seok Oh
IPC分类号： B29D11/00 , C30B33/00
CPC分类号： H01L27/1288 , G02F1/136204 , H01L27/1244
摘要： A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion. Therefore, excessive etching of the stepped portion may be prevented, so that a short-circuit defect between a metallic pattern and a pixel electrode may be prevented
摘要翻译：一种制造显示基板的方法包括在基底基板上形成包括栅极和存储导体的第一金属图案和开关器件的栅电极，形成栅极绝缘层，形成第二金属图案和包括源极线的沟道部分开关器件的源极和漏极，在第二金属图案上形成钝化层和光致抗蚀剂膜，图案化光致抗蚀剂膜以形成对应于栅极和源极导体和开关器件的第一图案部分，以及第二图案形成在存储线上的部分，蚀刻钝化层和栅极绝缘层，以及使用第一图案部分形成像素电极。因此，可以防止阶梯部分的过度蚀刻，从而可以防止金属图案和像素电极之间的短路缺陷

3. 发明授权

US07982223B2 Display apparatus and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07982223B2
公开(公告)日：2011-07-19
申请号：US12372212
申请日：2009-02-17
申请人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Hong-Kee Chin , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Sang-Gab Kim , Hong-Kee Chin , Yu-Gwang Jeong
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L27/124 , G02F1/136286 , G02F2001/136222 , G02F2001/136295 , H01L27/1248 , H01L27/1288
摘要： In a display apparatus and a method of manufacturing the display apparatus, a first insulating layer having a trench and a second insulating layer having a via hole corresponding to the trench are formed on an array substrate. After forming a seed layer in the trench, a conductive layer is formed on the seed layer through a plating process, thereby forming the gate line, the gate electrode and the storage line accommodated in the trench and the via hole.
摘要翻译：在显示装置和显示装置的制造方法中，在阵列基板上形成具有沟槽的第一绝缘层和具有与沟槽对应的通路孔的第二绝缘层。在沟槽中形成晶种层之后，通过电镀工艺在晶种层上形成导电层，从而形成栅极线，栅极电极和容纳在沟槽和通孔中的存储线。

4. 发明申请

US20090152635A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 有权
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20090152635A1
公开(公告)日：2009-06-18
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

5. 发明授权

US07405425B2 Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus 有权
标题翻译：薄膜晶体管，其制造方法，具有该薄膜晶体管的显示装置和制造该显示装置的方法
公开(公告)号：US07405425B2
公开(公告)日：2008-07-29
申请号：US11232306
申请日：2005-09-20
申请人： Sang-Gab Kim , Shi-Yul Kim , Hong-Sick Park , Hee-Hwan Choe , Hong-Kee Chin , Min-Seok Oh
发明人： Sang-Gab Kim , Shi-Yul Kim , Hong-Sick Park , Hee-Hwan Choe , Hong-Kee Chin , Min-Seok Oh
IPC分类号： H01L29/04
CPC分类号： H01L29/66765 , G02F1/1368 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.
摘要翻译：薄膜晶体管包括衬底上的栅电极，衬底上的栅极绝缘层，沟道图案，源电极和漏电极。沟道图案包括形成在栅电极上并覆盖栅电极的半导体图案以及形成在半导体图案上并彼此间隔开的第一和第二导电粘合剂图案。源电极包括顺序地形成在第一导电粘合剂图案上的第一阻挡图案，源图案和第一封盖图案。漏电极包括顺序地形成在第二导电粘合剂图案上的第二阻挡图案，漏极图案和第二封盖图案。第一和第二导电粘合剂图案的蚀刻部分具有基本垂直的轮廓，以防止源极和漏极的暴露，从而改善薄膜晶体管的特性。

6. 发明申请

US20080017884A1 DISPLAY SUBSTRATE, DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE DISPLAY APPARATUS 审中-公开
标题翻译：显示基板，具有显示基板的显示装置及制造显示装置的方法
公开(公告)号：US20080017884A1
公开(公告)日：2008-01-24
申请号：US11766329
申请日：2007-06-21
申请人： Chang-Oh Jeong , Sang-Gab Kim , Jun-Hyung Souk , Hong-Gyun Kim , In-Sun Hwang , Min-Seok Oh , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi , Hi-Kuk Lee , Shi-Yul Kim
发明人： Chang-Oh Jeong , Sang-Gab Kim , Jun-Hyung Souk , Hong-Gyun Kim , In-Sun Hwang , Min-Seok Oh , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi , Hi-Kuk Lee , Shi-Yul Kim
IPC分类号： H01L27/13 , H01L21/3205 , H01L23/48
CPC分类号： G02F1/133528 , G02F1/134336 , G02F2001/133548 , H01L27/12
摘要： A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.
摘要翻译：显示装置包括第一基板，形成在第一基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，形成在半导体层上的数据线，并且包括源极面对源电极的漏电极，与漏电极电连接的第一电极，与第一衬底相对的第二衬底，形成在第二衬底上的第二电极，以及设置在第一电极和第二电极之间的液晶层电极。第一和第二电极中的至少一个包括使入射光偏振的多个线图案。

7. 发明授权

US08643012B2 Display substrate and method for manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08643012B2
公开(公告)日：2014-02-04
申请号：US12952744
申请日：2010-11-23
申请人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Min-Seok Oh , Bong-Kyu Shin , Sang-Gab Kim , Eun-Guk Lee , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/13439 , G02F2201/50
摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.
摘要翻译：形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

8. 发明授权

US08273612B2 Display panel and method of manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US08273612B2
公开(公告)日：2012-09-25
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
发明人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

9. 发明授权

US07888675B2 Thin film transistor array panel and fabrication 有权
标题翻译：薄膜晶体管阵列和制造
公开(公告)号：US07888675B2
公开(公告)日：2011-02-15
申请号：US12099718
申请日：2008-04-08
申请人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
发明人： Sang-Gab Kim , Woo-Geun Lee , Shi-Yul Kim , Jin-Ho Ju , Jang-Soo Kim , Sang-Woo Whangbo , Min-Seok Oh , Hye-Young Ryu , Hong-Kee Chin
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , G02F2001/13629 , H01L29/458
摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要翻译：本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

10. 发明授权

US07758760B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07758760B2
公开(公告)日：2010-07-20
申请号：US11544987
申请日：2006-10-06
申请人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
发明人： Seung-Ha Choi , Min-Seok Oh , Hong-Kee Chin , Sang-Gab Kim , Yu-Gwang Jeong
IPC分类号： B44C1/22
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O2) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.
摘要翻译：提供薄膜晶体管（TFT）阵列面板及其制造方法。该方法包括在栅极线上形成半导体层和欧姆接触层，在欧姆接触层上形成导电层，在导电层上形成第一感光层图案，使用第一感光层图案蚀刻导电层，作为蚀刻掩模，使用第一感光层图案作为蚀刻掩模，通过含氟气体，含氯气体和氧（O 2）气蚀刻欧姆接触层和半导体层，将第一感光层图案去除预定厚度以形成第二感光层图案，并且使用第二感光层图案蚀刻导电层作为蚀刻掩模以暴露欧姆接触层的一部分。

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