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    • 3. 发明授权
    • Thin film transistor array panel and method for manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US08329486B2
    • 2012-12-11
    • US12472979
    • 2009-05-27
    • Yun-Seok LeeYoung-Je ChoSung-Hoon Kim
    • Yun-Seok LeeYoung-Je ChoSung-Hoon Kim
    • H01L21/00
    • H01L27/1288G02F1/133707G02F1/134336G02F2001/134345G02F2001/136222G02F2001/136236H01L27/1214H01L27/1248
    • The present disclosure relates to a thin film transistor array panel and a manufacturing method thereof. The method comprises: forming a thin film transistor on a substrate; forming a color filter adjacent to the thin film transistor and over the same substrate; depositing a first passivation layer on the color filter; coating a photosensitive film on the first passivation layer and exposing the photosensitive film to light using a first photomask to form a first photosensitive film pattern that comprises a first portion and a second portion that is thicker than the first portion, the first photosensitive film pattern exposing the first passivation layer around a circumference of the second portion; removing the exposed first passivation layer using the first photosensitive film pattern as an etch mask; blanket etching a whole surface of the first photosensitive film pattern until the first portion is removed to form a second photosensitive film pattern; depositing a conductive layer on the second photosensitive film pattern; and removing the second photosensitive film pattern to thereby selectively lift off portions of the conductive layer where a left behind portion forms a pixel electrode.
    • 本公开涉及一种薄膜晶体管阵列面板及其制造方法。 该方法包括:在衬底上形成薄膜晶体管; 形成与所述薄膜晶体管相邻并且在相同基板上的滤色器; 在滤色器上沉积第一钝化层; 在第一钝化层上涂覆感光膜,并使用第一光掩模将感光膜曝光,以形成第一感光膜图案,其包括比第一部分厚的第一部分和第二部分,第一感光膜图案曝光 所述第一钝化层围绕所述第二部分的圆周; 使用第一感光膜图案去除暴露的第一钝化层作为蚀刻掩模; 毯式地蚀刻第一感光膜图案的整个表面,直到第一部分被去除以形成第二感光膜图案; 在第二感光膜图案上沉积导电层; 并且去除第二感光膜图案,从而选择性地剥离左后部分形成像素电极的导电层的部分。