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1. 发明申请

US20150372038A1 IMAGE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME 有权
标题翻译：图像传感器和图像处理系统，包括它们
公开(公告)号：US20150372038A1
公开(公告)日：2015-12-24
申请号：US14741740
申请日：2015-06-17
申请人： Ji Won LEE , Seung Sik KIM , Young Chan KIM , Tae Han KIM , Eun Sub SHIM , Dong Joo YANG , Min Seok OH , Moo Sup LIM
发明人： Ji Won LEE , Seung Sik KIM , Young Chan KIM , Tae Han KIM , Eun Sub SHIM , Dong Joo YANG , Min Seok OH , Moo Sup LIM
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H04N5/3592 , H04N5/3696 , H04N5/378
摘要： An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.
摘要翻译：提供能够提高浮动扩散节点的电压的图像传感器。图像传感器包括位于半导体衬底中的浮动扩散节点和存储元件。图像传感器包括形成在浮动扩散节点上的第一遮光材料和形成在存储二极管上的第二遮光材料。第二遮光材料与第一遮光材料分离。图像传感器还包括被配置为向第一遮光材料施加第一电压的第一电压供给线和被配置为将低于第一电压的第二电压施加到第二遮光材料的第二电压供给线。

2. 发明申请

US20130201167A1 THREE-DIMENSIONAL IMAGE SENSOR AND MOBILE DEVICE INCLUDING SAME 有权
标题翻译：三维图像传感器和包括它们的移动设备
公开(公告)号：US20130201167A1
公开(公告)日：2013-08-08
申请号：US13615860
申请日：2012-09-14
申请人： Min Seok OH , Hae Kyung KONG , Tae Chan KIM , Jung Chak AHN , Moo Sup LIM
发明人： Min Seok OH , Hae Kyung KONG , Tae Chan KIM , Jung Chak AHN , Moo Sup LIM
IPC分类号： G06F3/038 , H01L27/148
CPC分类号： H04N13/271 , G01S7/4863 , H01L27/14656 , H04N5/37452
摘要： A 3D image sensor includes a depth pixel that includes; a photo detector generating photo-charge, first and second floating diffusion regions, a first transfer transistor transferring photo-charge to the first floating diffusion region during a first transfer period in response to a first transfer gate signal, a second transfer transistor transferring photo-charge to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and an overflow transistor that discharges surplus photo-charge in response to a drive gate signal. Control logic unit controlling operation of the depth pixel includes a first logic element providing the first transfer gate signal, a second logic element providing the second transfer gate signal, and another logic element providing the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period.
摘要翻译： 3D图像传感器包括深度像素，其包括：产生光电荷，第一和第二浮动扩散区域的光电检测器，响应于第一传输栅极信号在第一传输周期期间将光电荷传输到第一浮动扩散区域的第一传输晶体管，响应于第二传输门信号在第二传送周期期间向第二浮动扩散区域充电;以及溢流晶体管，其响应于驱动栅极信号而放电剩余的光电荷。控制逻辑单元控制深度像素的操作包括提供第一传输门信号的第一逻辑元件，提供第二传输门信号的第二逻辑元件，以及当第一传输周期至少部分地与第二转移期重叠。

3. 发明申请

US20130062500A1 IMAGE SENSOR APPARATUS USING SHADED PHOTODETECTOR FOR TIME OF FLIGHT DETERMINATION 有权
标题翻译：图像传感器设备使用阴影照相机进行飞行时间测定
公开(公告)号：US20130062500A1
公开(公告)日：2013-03-14
申请号：US13612904
申请日：2012-09-13
申请人： Min-Seok Oh , Moo-Sup LIM , Jung-Chak AHN , Eun-Sub SHIM
发明人： Min-Seok Oh , Moo-Sup LIM , Jung-Chak AHN , Eun-Sub SHIM
IPC分类号： H01L31/0232 , H01L27/146 , H01L27/148 , H01L31/02
CPC分类号： G01S17/89 , G01S7/4816 , G01S7/4865 , H04N5/341 , H04N5/361 , H04N5/3745
摘要： A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.
摘要翻译：图像传感器的单位像素包括积累电路，其被配置为通过在飞行时间（TOF）期间累积与暗电流相对应的电荷来产生累积的暗电流，所述累积电路被光学遮蔽以产生暗电流，输出电压产生电路，被配置为基于与累积暗电流相对应的电荷来产生和输出与TOF对应的输出电压;控制电路，被配置为基于输入到所述暗电流的光信号来控制所述输出电压产生电路的操作被物体反射后的单位像素，光信号由光源发射，以及初始化电路，被配置为以预定周期初始化累积电路。

4. 发明申请

US20110018042A1 UNIT PIXEL, AND CMOS IMAGE SENSOR HAVING THE SAME 失效
标题翻译：单元像素和CMOS图像传感器
公开(公告)号：US20110018042A1
公开(公告)日：2011-01-27
申请号：US12820787
申请日：2010-06-22
申请人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
发明人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
IPC分类号： H01L27/146 , H01L31/0232
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L27/14627
摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.
摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

5. 发明申请

US20100123771A1 Pixel circuit, photoelectric converter, and image sensing system including the pixel circuit and the photoelectric converter 审中-公开
标题翻译：像素电路，光电转换器和图像感测系统，包括像素电路和光电转换器
公开(公告)号：US20100123771A1
公开(公告)日：2010-05-20
申请号：US12591197
申请日：2009-11-12
申请人： Kyoung Sik Moon , Jung Chak Ahn , Moo Sup Lim , Sung-Ho Choi , Kang-Sun Lee
发明人： Kyoung Sik Moon , Jung Chak Ahn , Moo Sup Lim , Sung-Ho Choi , Kang-Sun Lee
IPC分类号： H04N13/02 , G01C3/08
CPC分类号： H04N5/341 , G01C3/08 , G01S7/4816 , G01S17/89 , H04N5/3696 , H04N5/3745
摘要： Provided are a pixel circuit, a photoelectric converter, and an image sensing system thereof. The pixel circuit includes a photodiode and an output unit. The photodiode generates a first photo charge to detect the distance from an object and a second photo charge to detect the color of the object. The output unit generates at least one depth signal used to detect the distance based on the first photo charge generated by the photodiode, and a color signal used to detect the color of the object based on the second photo charge.
摘要翻译：提供像素电路，光电转换器及其图像感测系统。像素电路包括光电二极管和输出单元。光电二极管产生第一光电荷以检测与物体的距离和第二照相电荷以检测物体的颜色。输出单元基于由光电二极管产生的第一光电荷产生用于检测距离的至少一个深度信号，以及用于基于第二照相电荷检测对象的颜色的颜色信号。

6. 发明申请

US20160249002A1 IMAGE SENSOR HAVING DIFFERENT SUBSTRATE BIAS VOLTAGES 有权
标题翻译：具有不同基板偏移电压的图像传感器
公开(公告)号：US20160249002A1
公开(公告)日：2016-08-25
申请号：US14989055
申请日：2016-01-06
申请人： Seung-sik KIM , Moo-sup LIM , Ji-won LEE
发明人： Seung-sik KIM , Moo-sup LIM , Ji-won LEE
IPC分类号： H04N5/3745 , H04N5/232 , H01L27/146
CPC分类号： H04N5/3745 , H01L27/14612 , H01L27/14654 , H04N5/3559 , H04N5/3591
摘要： An image sensor having different bias voltages is provided. The image sensor may include a plurality of pixels configured to output pixel signals based on a received optical signal, and logic circuits configured to output the pixels signals as image data. The pixels may be formed on a first region of a semiconductor substrate, the first region being substrate biased to a first voltage. The logic circuits may be formed on a second region of the semiconductor substrate different from the first region, the second region being substrate biased to a second voltage different from the first voltage. A full-well capacitance (FWC) of the photodiode may be increased by applying the first voltage, which is a negative (−) voltage, to a photodiode of a pixel to reduce (or, alternatively prevent) a blooming effect.
摘要翻译：提供具有不同偏置电压的图像传感器。图像传感器可以包括被配置为基于接收到的光信号输出像素信号的多个像素，以及被配置为将像素信号作为图像数据输出的逻辑电路。像素可以形成在半导体衬底的第一区域上，第一区域被衬底偏压到第一电压。逻辑电路可以形成在与第一区域不同的半导体衬底的第二区域上，第二区域被衬底偏压到与第一电压不同的第二电压。可以通过将作为负（ - ）电压的第一电压施加到像素的光电二极管来减少（或备选地防止）起霜效应来增加光电二极管的全阱电容（FWC）。

7. 发明申请

US20160204150A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20160204150A1
公开(公告)日：2016-07-14
申请号：US14990112
申请日：2016-01-07
申请人： Min-Seok Oh , Young-chan Kim , Moo-sup Lim
发明人： Min-Seok Oh , Young-chan Kim , Moo-sup Lim
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14645
摘要： Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.
摘要翻译：示例性实施例涉及支持用于最小化图像失真的全局快门的图像传感器。示例性图像传感器包括具有彼此相对的第一表面和第二表面的半导体层; 形成在靠近第一表面的半导体层中的光敏器件，并且基于经由第二表面入射的光累积电荷; 电荷存储装置，其形成在靠近第一表面的半导体层中，并临时存储由感光装置累积的电荷; 第一透射晶体管，其将由感光器件积累的电荷传输到电荷存储器件，并且包括形成在半导体层的第一表面上的第一栅极; 并且形成在第二表面附近的半导体层中的泄漏光生电荷漏极区域与电荷存储装置分离，并且被布置在电荷存储装置的上方。

8. 发明申请

US20160035784A9 UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR INCLUDING THE SAME AND METHOD OF MANUFACTURING IMAGE SENSOR 有权
公开(公告)号：US20160035784A9
公开(公告)日：2016-02-04
申请号：US14660570
申请日：2015-03-17
申请人： Yong-Chan KIM , Seung-Sik KIM , Eun-Sub SHIM , Moo-Sup LIM
发明人： Yong-Chan KIM , Seung-Sik KIM , Eun-Sub SHIM , Moo-Sup LIM
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14683 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14689 , H01L27/14806 , H04N5/3559
摘要： Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

9. 发明申请

US20160013227A1 PIXEL ARRAYS OF IMAGE SENSORS, AND IMAGE SENSORS INCLUDING THE PIXEL ARRAYS 有权
标题翻译：图像传感器的像素阵列和包含像素阵列的图像传感器
公开(公告)号：US20160013227A1
公开(公告)日：2016-01-14
申请号：US14792862
申请日：2015-07-07
申请人： Seung-Sik KIM , Young-Chan KIM , Eun-Sub Shim , Min-Seok OH , Ji-Won LEE , Moo-Sup LIM , Tae-Han KIM , Dong-Joo YANG
发明人： Seung-Sik KIM , Young-Chan KIM , Eun-Sub Shim , Min-Seok OH , Ji-Won LEE , Moo-Sup LIM , Tae-Han KIM , Dong-Joo YANG
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14623 , H01L27/14641
摘要： Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.
摘要翻译：提供了包括与第一像素相邻的第一像素和第二像素的图像传感器的像素阵列。第一像素可以包括第一光电转换装置，第一电荷存储装置，第一浮动扩散节点和第一传输门。第二像素可以包括第二光电转换装置，第二电荷存储装置，第二浮动扩散节点和第二传输门。像素阵列还可以包括在第一电荷存储装置和第二电荷存储装置两者上的存储栅极。存储门可以具有整体结构。

10. 发明授权

US08614470B2 Unit pixel of a CMOS image sensor 失效
标题翻译： CMOS图像传感器的单位像素
公开(公告)号：US08614470B2
公开(公告)日：2013-12-24
申请号：US13541343
申请日：2012-07-03
申请人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
发明人： Kyung-Ho Lee , Dong-Yoon Jang , Jung-Chak Ahn , Moo-Sup Lim
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14621 , H01L27/14627
摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.
摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。光电二极管具有基于半导体衬底中的光的入射角的倾斜形状。

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