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1. 发明申请

US20130337608A1 SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的工艺
公开(公告)号：US20130337608A1
公开(公告)日：2013-12-19
申请号：US14003404
申请日：2012-03-09
申请人： Takahiro Kotani , Masakatsu Maeda
发明人： Takahiro Kotani , Masakatsu Maeda
IPC分类号： H01L21/56
CPC分类号： H01L21/561 , H01L21/568 , H01L23/29 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/96 , H01L25/0655 , H01L2224/12105 , H01L2224/13024 , H01L2224/96 , H01L2924/01029 , H01L2924/10253 , H01L2924/3511 , H01L2224/19 , H01L2924/00
摘要： According to the present invention, a structure of a semiconductor device in which adhesive deposits are reduced and yield is excellent; and a process for manufacturing the same can be provided. A process for manufacturing a semiconductor device according to the present invention includes: a step of arranging plural semiconductor elements (106) on a main surface of a thermal release adhesive layer (mount film); a step of forming an encapsulant layer (108), which encapsulates the plural semiconductor elements (106) on the main surface of the mount film, using a semiconductor-encapsulating resin composition; and a step of peeling off the mount film to expose a lower surface (30) of the encapsulant layer (108) and lower surfaces (20) of the semiconductor elements (106). A contact angle of the lower surface (30) of the encapsulant layer (108) is less than or equal to 70° when measured using formamide after the step of peeling off the mount film.
摘要翻译：根据本发明，其中粘合剂沉积物减少并且产率优异的半导体器件的结构; 并且可以提供其制造方法。根据本发明的半导体器件的制造方法包括：将多个半导体元件（106）布置在热剥离粘合剂层（安装膜）的主表面上的步骤; 使用半导体封装树脂组合物形成将所述多个半导体元件（106）封装在所述安装膜的主表面上的密封剂层（108）的工序; 以及剥离所述安装膜以暴露所述密封剂层（108）的下表面（30）和所述半导体元件（106）的下表面（20）的步骤。在剥离安装膜的步骤之后，使用甲酰胺测量时，密封剂层（108）的下表面（30）的接触角小于或等于70°。

2. 发明授权

US08309164B2 Metallized substrate and method for producing the same 有权
标题翻译：金属化基板及其制造方法
公开(公告)号：US08309164B2
公开(公告)日：2012-11-13
申请号：US12602828
申请日：2008-06-10
申请人： Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
发明人： Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
IPC分类号： B05D3/10 , B05D5/12 , B05D5/00
CPC分类号： H01L23/498 , B22F7/04 , B22F2998/00 , C22C5/02 , C22C5/04 , C22C19/03 , C22C27/04 , C22C32/0047 , C23C18/32 , C23C18/54 , C25D5/48 , C25D5/50 , H01L21/4853 , H01L23/15 , H01L23/49811 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48227 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15787 , H01L2924/20752 , Y10T428/12889 , H01L2924/00014 , B22F9/04 , H01L2924/00
摘要： A metallized substrate having, disposed in the order mentioned: a ceramics substrate; a high-melting point metal layer; a base nickel plating layer; a layered nickel-phosphorous plating layer; a diffusion-inhibiting plating layer; and a gold plating layer. The base nickel plating layer being any one of a nickel plating layer, a nickel-boron plating layer, or a nickel-cobalt plating layer. The diffusion-inhibiting plating layer being any one of a columnar nickel-phosphorous plating layer, a palladium-phosphorous plating layer, or a palladium plating layer. According to the above composition, even after heating the semiconductor chips in a mounted state, the metallized substrate can make the connection strength of wire bonding favorable.
摘要翻译：金属化基板，具有按照以下顺序设置的陶瓷基板; 高熔点金属层; 基底镍镀层; 层状镍 - 磷电镀层; 扩散抑制镀层; 和镀金层。基底镀镍层是镀镍层，镍 - 硼镀层或镍钴镀层中的任意一种。扩散抑制镀层是柱状镍 - 磷镀层，钯 - 磷镀层或钯镀层中的任一种。根据上述组成，即使在安装状态下加热半导体芯片之后，金属化基板也可以使引线接合的连接强度有利。

3. 发明申请

US20120174390A1 METHOD FOR MANUFACTURING METALLIZED CERAMIC SUBSTRATE CHIP 审中-公开
标题翻译：用于制造金属化陶瓷衬底芯片的方法
公开(公告)号：US20120174390A1
公开(公告)日：2012-07-12
申请号：US13423616
申请日：2012-03-19
申请人： Yasuyuki YAMAMOTO , Kouichi YAMAMOTO , Masakatsu MAEDA
发明人： Yasuyuki YAMAMOTO , Kouichi YAMAMOTO , Masakatsu MAEDA
IPC分类号： H01R43/00
CPC分类号： H05K3/0052 , H01L23/13 , H01L2924/0002 , H05K1/0306 , H05K2201/09036 , H05K2201/0909 , H05K2203/0228 , Y10T29/49117 , Y10T29/49124 , H01L2924/00
摘要： The present invention provides a method for manufacturing a substrate chip including the steps of: setting the thickness of at least a part of a metal wiring pattern unit provided on the raw substrate to be 0.1 μm to 5 μm; forming a groove for creating at least a crack in the surface of the ceramic substrate along a planned cutting line which passes through the part of the metal wiring pattern unit by using a cutting wheel having a cutter blade being formed into substantially V shape in cross section along the circumferential portion of the disk rotating wheel; and cutting the raw substrate by giving load from just behind of the groove.
摘要翻译：本发明提供一种制造衬底芯片的方法，包括以下步骤：将设置在原始衬底上的金属布线图案单元的至少一部分的厚度设定为0.1μm至5μm; 形成用于沿着规划的切割线在陶瓷基板的表面中至少形成裂纹的槽，该切割线穿过金属布线图案单元的一部分，通过使用具有切割刀的切割轮，该切割轮具有大致V形截面沿着盘旋转轮的圆周部分; 并通过从凹槽的后面施加载荷来切割原始基底。

4. 发明授权

US08008180B2 Method of forming an OHMIC contact on a P-type 4H-SIC substrate 有权
标题翻译：在P型4H-SIC基板上形成OHMIC接触的方法
公开(公告)号：US08008180B2
公开(公告)日：2011-08-30
申请号：US12530901
申请日：2008-03-13
申请人： Yasuo Takahashi , Masakatsu Maeda , Akinori Seki , Akira Kawahashi , Masahiro Sugimoto
发明人： Yasuo Takahashi , Masakatsu Maeda , Akinori Seki , Akira Kawahashi , Masahiro Sugimoto
IPC分类号： H01L21/44
CPC分类号： H01L29/7813 , H01L21/0485 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/732 , Y10S438/931
摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
摘要翻译：提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。

5. 发明授权

US07993699B2 Process for producing metallized aluminum nitride substrate 有权
标题翻译：金属化氮化铝基板的制造方法
公开(公告)号：US07993699B2
公开(公告)日：2011-08-09
申请号：US11667603
申请日：2005-11-10
申请人： Yasuyuki Yamamoto , Masakatsu Maeda
发明人： Yasuyuki Yamamoto , Masakatsu Maeda
IPC分类号： B05D5/12 , B05D3/00
CPC分类号： C04B41/5133 , B22F7/02 , C04B41/009 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/90 , C04B2111/00844 , C22C32/0047 , C23C24/08 , C23C30/005 , H01L23/15 , H01L2924/0002 , H05K1/092 , H05K2201/0209 , Y10T29/49789 , Y10T428/12063 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5063 , C04B41/4564 , C04B41/5116 , C04B41/5144 , C04B35/581 , H01L2924/00
摘要： A metallized aluminum substrate for mounting a semiconductor device such as LD or LED is provided and a metallized aluminum nitride substrate having excellent dimensional accuracy and high bonding strength of a wiring pattern. An intermediate material substrate is provided, comprising a sintered aluminum nitride substrate having on its surface a wiring pattern constituted of a conductor layer composed of a composition containing at least high-melting point metal powder, aluminum nitride powder and a sintering auxiliary agent for aluminum nitride is prepared. Then, the intermediate material substrate is fired while the sintered aluminum nitride obtained by sintering using a sintering auxiliary agent of the same kind as that of the sintering auxiliary agent contained in the composition is placed so as to be brought into contact with the conductor layer on the surface of the intermediate material substrate or so as to be present in the vicinity of the conductor layer.
摘要翻译：提供了用于安装诸如LD或LED的半导体器件的金属化铝基板和具有优异的尺寸精度和布线图案的高粘结强度的金属化的氮化铝基板。提供了一种中间材料基板，其包括烧结的氮化铝基板，其表面上具有由至少含有高熔点金属粉末，氮化铝粉末和氮化铝的烧结助剂的组成的导体层构成的布线图案准备好了然后，烧结中间材料基板，同时通过使用与组合物中所含的与烧结助剂相同种类的烧结助剂进行烧结而获得的烧结氮化铝被放置成与导体层接触，中间材料基板的表面，或者存在于导体层附近。

6. 发明授权

US07876053B2 Nitride sintered body and method for manufacturing thereof 有权
标题翻译：氮化物烧结体及其制造方法
公开(公告)号：US07876053B2
公开(公告)日：2011-01-25
申请号：US11630630
申请日：2005-06-20
申请人： Yasuyuki Yamamoto , Yukihiro Kanechika , Masakatsu Maeda
发明人： Yasuyuki Yamamoto , Yukihiro Kanechika , Masakatsu Maeda
IPC分类号： H01J17/16
CPC分类号： C04B35/64 , C04B35/581 , C04B35/62625 , C04B35/6264 , C04B35/6303 , C04B2235/3205 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/656 , C04B2235/658 , C04B2235/77 , C04B2235/85 , C04B2235/9607 , C04B2235/9646 , Y10T428/249921 , Y10T428/268
摘要： An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
摘要翻译：高导热性和光反射率高的绝缘材料，以及用于安装其上的LED元件的高散热性的基座，能够提高光利用率并快速散发由元件产生的热量。例如，用作基座的基板材料是具有350nm至800nm的波长区域中的光的反射率为50％以上的氮化物烧结体，波长为700nm的光的反射率为60nm 通过在含有特定量的惰性气氛中烧结由含有100质量份氮化铝粉末的组合物和0.5〜10质量份含有碱土金属如3CaO×Al 2 O 3的化合物组成的预成型体而获得的％的碳蒸气，或者通过将施加在具有预定温度的耐热性的基底上的氮化物糊的烧成。

7. 发明授权

US07718456B2 Package for housing light-emitting element and method for manufacturing package for housing light-emitting element 失效
标题翻译：用于容纳发光元件的封装和用于制造用于容纳发光元件的封装的方法
公开(公告)号：US07718456B2
公开(公告)日：2010-05-18
申请号：US11664181
申请日：2005-09-29
申请人： Masakatsu Maeda , Yasuyuki Yamamoto
发明人： Masakatsu Maeda , Yasuyuki Yamamoto
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/486 , H01L24/73 , H01L33/46 , H01L33/62 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/0102 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/15153 , H01L2924/00 , H01L2924/00012 , H01L2224/0401
摘要： A package for housing a light-emitting element wherein a via hole for wiring provided so as to pass through an insulating substrate is arranged in such a manner that it is positioned under a reflector frame; a method for manufacturing the above package for housing a light-emitting element which comprises the steps of separately providing a green sheet for the substrate and a green sheet for the frame, causing a paste containing a ceramic powder to be present between the two green sheets to bind them, and subjecting them to degreasing and sintering, to thereby integrate them.
摘要翻译：一种用于容纳发光元件的封装，其中设置为穿过绝缘基板的布线用通孔布置成使其位于反射器框架下方; 一种用于制造用于容纳发光元件的上述封装的方法，包括以下步骤：分别提供用于基板的生片和用于框架的生片，使得包含陶瓷粉末的糊剂存在于两个生片之间结合它们，并对其进行脱脂和烧结，从而将它们整合。

8. 发明申请

US20100015468A1 METHOD FOR MANUFACTURING METALLIZED ALUMINUM NITRIDE SUBSTRATE 审中-公开
标题翻译：制造金属化氮化铝衬底的方法
公开(公告)号：US20100015468A1
公开(公告)日：2010-01-21
申请号：US12519571
申请日：2007-12-21
申请人： Yasuyuki Yamamoto , Masakatsu Maeda , Osamu Yatabe
发明人： Yasuyuki Yamamoto , Masakatsu Maeda , Osamu Yatabe
IPC分类号： B32B15/04 , B05D3/02
CPC分类号： H05K3/38 , C04B41/009 , C04B41/52 , C04B41/90 , C04B2111/00844 , H01L21/4867 , H01L23/3735 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H05K1/092 , H05K3/248 , H05K2201/0347 , H05K2201/035 , Y10T428/12576 , C04B35/581 , C04B41/4517 , C04B41/4539 , C04B41/5133 , C04B41/4541 , C04B41/5144 , C04B41/5127 , C04B41/522 , C04B41/5116 , H01L2924/00
摘要： A method for manufacturing metallized aluminum nitride substrate. The method includes: Step A for forming a high-melting point metal layer over a sintered aluminum nitride substrate; Step B for forming over the high-melting point metal layer an intermediate metal layer of at least one selected from the group of: nickel, copper, copper-silver, copper-tin, and gold by plate processing; and Step C for forming a surface metal layer containing silver as a main component over the intermediate metal layer by coating a silver paste whose glass component content is 1 mass % or less and firing under nonoxidizing atmosphere. By this method, it is capable of forming a glass component-free silver layer which is adhered at a high degree of adhesion strength onto the high-melting point metal layer formed over the aluminum nitride substrate as a top face by thick-film method using a silver paste which makes thick-membrane forming easier.
摘要翻译：金属化氮化铝基板的制造方法。该方法包括：步骤A，用于在烧结的氮化铝衬底上形成高熔点金属层; 步骤B，通过板加工在高熔点金属层上形成选自镍，铜，铜 - 银，铜 - 锡和金中的至少一种的中间金属层; 以及步骤C，通过涂覆玻璃成分含量为1质量％以下的银膏，在非氧化性气氛下进行烧成，在中间金属层上形成含有银为主要成分的表面金属层。通过该方法，能够通过厚膜法以高膜法形成以高粘合强度粘附在形成在氮化铝基板上的高熔点金属层上的无玻璃成分的银层，使得较厚膜形成更容易的银糊。

9. 发明授权

US07587180B2 FM modulator 失效
标题翻译： FM调制器
公开(公告)号：US07587180B2
公开(公告)日：2009-09-08
申请号：US11583176
申请日：2006-10-19
申请人： Masakatsu Maeda , Kaoru Ishida
发明人： Masakatsu Maeda , Kaoru Ishida
IPC分类号： H04B1/04
CPC分类号： H03C3/0925 , H03C3/0941 , H03C3/095 , H03C3/0966 , H03C3/0983
摘要： An FM modulator measuring an f-V characteristic of a voltage controlled oscillator in a reduced time period. In the FM modular a characteristic measurement time control section 110 notifies a correction section 108 of a time at which a measurement of the f-V characteristic of a voltage controlled oscillator 103 is to start and a time at which the measurement of the f-V characteristic of the voltage controlled oscillator 103 is to and while a carrier wave frequency is being changed to a predetermined frequency. Thus, the correction section 108 measures the f-V characteristic of the voltage controlled oscillator 103 in a reduced time period.
摘要翻译：在缩短的时间周期内测量压控振荡器的f-V特性的FM调制器。在FM模块中，特性测量时间控制部分110向校正部分108通知压控振荡器103的fV特性的测量开始的时间和电压的fV特性的测量的时间受控振荡器103正在将载波频率改变为预定频率。因此，校正部分108在减小的时间段内测量压控振荡器103的f-V特性。

10. 发明申请

US20090115466A1 SEMICONDUCTOR APPARATUS AND RADIO CIRCUIT APPARATUS USING THE SAME 失效
标题翻译：使用其的半导体装置和无线电电路装置
公开(公告)号：US20090115466A1
公开(公告)日：2009-05-07
申请号：US11994542
申请日：2006-06-27
申请人： Masakatsu Maeda
发明人： Masakatsu Maeda
IPC分类号： H03B19/00
CPC分类号： H04B1/30 , H03L7/183
摘要： A semiconductor apparatus includes a signal source 7 that outputs a signal of predetermined frequency, a frequency divider 15 that receives the output signal of the signal source and is capable of switching the output signal to two or more frequency division ratios, a delta-sigma modulator 16 that controls the frequency division ratio of the frequency divider, and a bandpass filter 17 that receives an output of the frequency divider. The frequency of the input signal of the frequency divider is divided by the frequency division ratio controlled by the delta-sigma modulator, and quantization noise appearing in the output of the frequency divider generated by the delta-sigma modulator is attenuated with the bandpass filter. The semiconductor apparatus easily can convert a signal output by a single signal source to a signal of predetermined frequency and supply a plurality of signals of predetermined frequency using a simple configuration with reduced chip size.
摘要翻译：半导体装置包括输出预定频率的信号的信号源7，接收信号源的输出信号并且能够将输出信号切换到两个或更多个分频比的分频器15，Δ-Σ调制器 16，其控制分频器的分频比，以及带通滤波器17，其接收分频器的输出。分频器的输入信号的频率除以由Δ-Σ调制器控制的分频比，并且由Δ-Σ调制器产生的分频器的输出中出现的量化噪声被带通滤波器衰减。半导体装置可以容易地将由单个信号源输出的信号转换为预定频率的信号，并且使用具有减小的芯片尺寸的简单配置来提供预定频率的多个信号。

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