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1. 发明授权

US08309164B2 Metallized substrate and method for producing the same 有权
标题翻译：金属化基板及其制造方法
公开(公告)号：US08309164B2
公开(公告)日：2012-11-13
申请号：US12602828
申请日：2008-06-10
申请人： Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
发明人： Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
IPC分类号： B05D3/10 , B05D5/12 , B05D5/00
CPC分类号： H01L23/498 , B22F7/04 , B22F2998/00 , C22C5/02 , C22C5/04 , C22C19/03 , C22C27/04 , C22C32/0047 , C23C18/32 , C23C18/54 , C25D5/48 , C25D5/50 , H01L21/4853 , H01L23/15 , H01L23/49811 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48227 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15787 , H01L2924/20752 , Y10T428/12889 , H01L2924/00014 , B22F9/04 , H01L2924/00
摘要： A metallized substrate having, disposed in the order mentioned: a ceramics substrate; a high-melting point metal layer; a base nickel plating layer; a layered nickel-phosphorous plating layer; a diffusion-inhibiting plating layer; and a gold plating layer. The base nickel plating layer being any one of a nickel plating layer, a nickel-boron plating layer, or a nickel-cobalt plating layer. The diffusion-inhibiting plating layer being any one of a columnar nickel-phosphorous plating layer, a palladium-phosphorous plating layer, or a palladium plating layer. According to the above composition, even after heating the semiconductor chips in a mounted state, the metallized substrate can make the connection strength of wire bonding favorable.
摘要翻译：金属化基板，具有按照以下顺序设置的陶瓷基板; 高熔点金属层; 基底镍镀层; 层状镍 - 磷电镀层; 扩散抑制镀层; 和镀金层。基底镀镍层是镀镍层，镍 - 硼镀层或镍钴镀层中的任意一种。扩散抑制镀层是柱状镍 - 磷镀层，钯 - 磷镀层或钯镀层中的任一种。根据上述组成，即使在安装状态下加热半导体芯片之后，金属化基板也可以使引线接合的连接强度有利。

2. 发明申请

US20100183898A1 METALLIZED SUBSTRATE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：金属化基板及其制造方法
公开(公告)号：US20100183898A1
公开(公告)日：2010-07-22
申请号：US12602828
申请日：2008-06-10
申请人： Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
发明人： Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
IPC分类号： B32B15/01 , B05D3/02 , C25D5/50 , C25D5/54
CPC分类号： H01L23/498 , B22F7/04 , B22F2998/00 , C22C5/02 , C22C5/04 , C22C19/03 , C22C27/04 , C22C32/0047 , C23C18/32 , C23C18/54 , C25D5/48 , C25D5/50 , H01L21/4853 , H01L23/15 , H01L23/49811 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48227 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15787 , H01L2924/20752 , Y10T428/12889 , H01L2924/00014 , B22F9/04 , H01L2924/00
摘要： A metallized substrate having, disposed in the order mentioned: a ceramics substrate; a high-melting point metal layer; a base nickel plating layer; a layered nickel-phosphorous plating layer; a diffusion-inhibiting plating layer; and a gold plating layer. The base nickel plating layer being any one of a nickel plating layer, a nickel-boron plating layer, or a nickel-cobalt plating layer. The diffusion-inhibiting plating layer being any one of a columnar nickel-phosphorous plating layer, a palladium-phosphorous plating layer, or a palladium plating layer. According to the above composition, even after heating the semiconductor chips in a mounted state, the metallized substrate can make the connection strength of wire bonding favorable.
摘要翻译：金属化基板，具有按照以下顺序设置的陶瓷基板; 高熔点金属层; 基底镍镀层; 层状镍 - 磷电镀层; 扩散抑制镀层; 和镀金层。基底镀镍层是镀镍层，镍 - 硼镀层或镍钴镀层中的任意一种。扩散抑制镀层是柱状镍 - 磷镀层，钯 - 磷镀层或钯镀层中的任一种。根据上述组成，即使在安装状态下加热半导体芯片之后，金属化基板也可以使引线接合的连接强度有利。

3. 发明授权

US08071187B2 Method for fabricating metallized ceramics substrate, metallized ceramics substrate fabricated by the method, and package 有权
标题翻译：用于制造金属化陶瓷衬底的方法，通过该方法制造的金属化陶瓷衬底和封装
公开(公告)号：US08071187B2
公开(公告)日：2011-12-06
申请号：US12161193
申请日：2007-01-23
申请人： Yasuyuki Yamamoto , Osamu Yatabe , Masakatsu Maeda
发明人： Yasuyuki Yamamoto , Osamu Yatabe , Masakatsu Maeda
IPC分类号： B29D22/00 , B32B7/02 , H01L23/15 , H05K5/06 , H05K7/02
CPC分类号： H01L23/15 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H05K1/092 , H05K3/4667 , H05K2201/0266 , H05K2201/0352 , Y10T428/131 , Y10T428/24355 , Y10T428/24917 , Y10T428/24926 , Y10T428/24942 , Y10T428/31 , H01L2924/00
摘要： A fabrication method for metallized a ceramics substrate including the steps of: forming a first conductive paste layer containing metallic powder on a sintered ceramics substrate; forming a second conductive paste layer containing metallic powder of which average particle diameter is different from that of metallic powder constituting the first conductive paste layer; and forming a first conductive layer and a second conductive paste layer. The surface roughness of the first conductive layer and the second conductive layer is different. By this method, it is possible to secure airtightness of the metallized ceramics substrate even if it is a multilayered substrate having a plurality of metallized layers.
摘要翻译：一种金属化陶瓷基板的制造方法，包括以下步骤：在烧结陶瓷基板上形成含有金属粉末的第一导电浆料层; 形成含有与构成第一导电糊层的金属粉末的平均粒径不同的金属粉末的第二导电膏层; 以及形成第一导电层和第二导电糊层。第一导电层和第二导电层的表面粗糙度不同。通过这种方法，即使是具有多个金属化层的多层基板，也可以确保金属化陶瓷基板的气密性。

4. 发明申请

US20100178461A1 METHOD FOR FABRICATING METALLIZED CERAMICS SUBSTRATE, METALLIZED CERAMICS SUBSTRATE FABRICATED BY THE METHOD, AND PACKAGE 有权
标题翻译：金属化陶瓷基板的制造方法，由该方法制成的金属化陶瓷基板和封装
公开(公告)号：US20100178461A1
公开(公告)日：2010-07-15
申请号：US12161193
申请日：2007-01-23
申请人： Yasuyuki Yamamoto , Osamu Yatabe , Masakatsu Maeda
发明人： Yasuyuki Yamamoto , Osamu Yatabe , Masakatsu Maeda
IPC分类号： B32B3/02 , B05D3/02
CPC分类号： H01L23/15 , H01L23/10 , H01L2924/0002 , H01L2924/01079 , H05K1/092 , H05K3/4667 , H05K2201/0266 , H05K2201/0352 , Y10T428/131 , Y10T428/24355 , Y10T428/24917 , Y10T428/24926 , Y10T428/24942 , Y10T428/31 , H01L2924/00
摘要： A fabrication method for metallized a ceramics substrate including the steps of: forming a first conductive paste layer containing metallic powder on a sintered ceramics substrate; forming a second conductive paste layer containing metallic powder of which average particle diameter is different from that of metallic powder constituting the first conductive paste layer; and forming a first conductive layer and a second conductive paste layer. The surface roughness of the first conductive layer and the second conductive layer is different. By this method, it is possible to secure airtightness of the metallized ceramics substrate even if it is a multilayered substrate having a plurality of metallized layers.
摘要翻译：一种金属化陶瓷基板的制造方法，包括以下步骤：在烧结陶瓷基板上形成含有金属粉末的第一导电浆料层; 形成含有与构成第一导电糊层的金属粉末的平均粒径不同的金属粉末的第二导电膏层; 以及形成第一导电层和第二导电糊层。第一导电层和第二导电层的表面粗糙度不同。通过这种方法，即使是具有多个金属化层的多层基板，也可以确保金属化陶瓷基板的气密性。

5. 发明申请

US20100015468A1 METHOD FOR MANUFACTURING METALLIZED ALUMINUM NITRIDE SUBSTRATE 审中-公开
标题翻译：制造金属化氮化铝衬底的方法
公开(公告)号：US20100015468A1
公开(公告)日：2010-01-21
申请号：US12519571
申请日：2007-12-21
申请人： Yasuyuki Yamamoto , Masakatsu Maeda , Osamu Yatabe
发明人： Yasuyuki Yamamoto , Masakatsu Maeda , Osamu Yatabe
IPC分类号： B32B15/04 , B05D3/02
CPC分类号： H05K3/38 , C04B41/009 , C04B41/52 , C04B41/90 , C04B2111/00844 , H01L21/4867 , H01L23/3735 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H05K1/092 , H05K3/248 , H05K2201/0347 , H05K2201/035 , Y10T428/12576 , C04B35/581 , C04B41/4517 , C04B41/4539 , C04B41/5133 , C04B41/4541 , C04B41/5144 , C04B41/5127 , C04B41/522 , C04B41/5116 , H01L2924/00
摘要： A method for manufacturing metallized aluminum nitride substrate. The method includes: Step A for forming a high-melting point metal layer over a sintered aluminum nitride substrate; Step B for forming over the high-melting point metal layer an intermediate metal layer of at least one selected from the group of: nickel, copper, copper-silver, copper-tin, and gold by plate processing; and Step C for forming a surface metal layer containing silver as a main component over the intermediate metal layer by coating a silver paste whose glass component content is 1 mass % or less and firing under nonoxidizing atmosphere. By this method, it is capable of forming a glass component-free silver layer which is adhered at a high degree of adhesion strength onto the high-melting point metal layer formed over the aluminum nitride substrate as a top face by thick-film method using a silver paste which makes thick-membrane forming easier.
摘要翻译：金属化氮化铝基板的制造方法。该方法包括：步骤A，用于在烧结的氮化铝衬底上形成高熔点金属层; 步骤B，通过板加工在高熔点金属层上形成选自镍，铜，铜 - 银，铜 - 锡和金中的至少一种的中间金属层; 以及步骤C，通过涂覆玻璃成分含量为1质量％以下的银膏，在非氧化性气氛下进行烧成，在中间金属层上形成含有银为主要成分的表面金属层。通过该方法，能够通过厚膜法以高膜法形成以高粘合强度粘附在形成在氮化铝基板上的高熔点金属层上的无玻璃成分的银层，使得较厚膜形成更容易的银糊。

6. 发明授权

US08633101B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US08633101B2
公开(公告)日：2014-01-21
申请号：US13499652
申请日：2010-09-02
申请人： Masahiro Sugimoto , Akinori Seki , Akira Kawahashi , Yasuo Takahashi , Masakatsu Maeda
发明人： Masahiro Sugimoto , Akinori Seki , Akira Kawahashi , Yasuo Takahashi , Masakatsu Maeda
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44 , H01L21/302 , H01L21/461 , H01L21/31
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.
摘要翻译：提供了包括对氮化物半导体具有低接触电阻的电极的半导体器件的制造方法。制造方法包括在氮化物半导体层上形成含有碳的含碳层的含碳层形成工序和在含碳层上形成含有钛的含钛层的含钛层形成工序。在含钛层和氮化物半导体层之间形成TiN和TiC的完全固溶Ti（C，N）层。结果，含钛层在其间的整个边界处与氮化物半导体层欧姆接触。

7. 发明授权

US08508303B2 Digital frequency/phase locked loop 有权
标题翻译：数字频率/锁相环
公开(公告)号：US08508303B2
公开(公告)日：2013-08-13
申请号：US13256748
申请日：2010-02-05
申请人： Masakatsu Maeda
发明人： Masakatsu Maeda
IPC分类号： H03L7/099
CPC分类号： H03L7/107 , H03L7/093 , H03L7/099 , H03L7/1075 , H03L2207/06 , H03L2207/50
摘要： A digital FLL/PLL is provided which is capable of converging an oscillation frequency from a VCO to a desired frequency at a high speed even without setting a damping factor corresponding to each VCO gain. A digital FLL/PLL of the present invention includes: a comparator for comparing a channel signal to a loopback signal having an oscillation frequency to generate a signal error; a digital loop filter for generating a control voltage that determines the oscillation frequency, on the basis of the signal error; a VCO for controlling an oscillation frequency on the basis of the control voltage; a loopback path through which the oscillation frequency generated by the VCO is outputted as the loopback signal to the comparator; and a control section for monitoring the signal error, and controlling the digital loop filter such that the oscillation frequency of the VCO becomes a stationary state, when detecting that the signal error meets a predetermined condition after the channel signal is switched.
摘要翻译：提供了一种数字FLL / PLL，其能够以高速将VCO的振荡频率收敛到期望的频率，而不设置对应于每个VCO增益的阻尼因子。本发明的数字FLL / PLL包括：比较器，用于将信道信号与具有振荡频率的环回信号进行比较以产生信号误差; 数字环路滤波器，用于基于信号误差产生确定振荡频率的控制电压; 用于基于所述控制电压来控制振荡频率的VCO; 由VCO产生的振荡频率作为环回信号输出到比较器的环回路径; 以及用于监视信号误差的控制部分，并且当在信道信号被切换之后检测到信号误差满足预定条件时，控制数字环路滤波器使得VCO的振荡频率变为静止状态。

8. 发明授权

US08477870B2 Transmitter including polar modulation circuit 有权
标题翻译：发射机包括极性调制电路
公开(公告)号：US08477870B2
公开(公告)日：2013-07-02
申请号：US13380947
申请日：2010-04-09
申请人： Masakatsu Maeda
发明人： Masakatsu Maeda
IPC分类号： H04L27/00
CPC分类号： H03F1/0205 , H03F3/24 , H03F2200/324 , H03F2200/336
摘要： Provided is a transmitter including a polar modulation circuit which adjusts a timing lag between an amplitude component and a phase component more accurately than a conventional art. The polar modulation circuit includes: a first calculator for performing an exclusive OR logical operation between the amplitude component before and after being inputted to the first processing section; a second calculator for performing an exclusive OR logical operation between the phase component before and after being inputted to the second processing section; and a delay fluctuation detection/compensation section for obtaining a delay time of the amplitude component based on an amount of output accumulation of the first calculator; obtaining a delay time of the phase component based on an amount of output accumulation of the second calculator; detecting an amount of delay fluctuation by using the delay times; and adjusting timings of the amplitude component and the phase component.
摘要翻译：提供了一种发射器，其包括极限调制电路，其比常规技术更准确地调节幅度分量和相位分量之间的定时滞后。极坐标调制电路包括：第一计算器，用于在输入到第一处理部分之前和之后的幅度分量之间执行异或逻辑运算; 第二计算器，用于在输入到第二处理部分之前和之后的相位分量之间执行异或逻辑运算; 以及延迟波动检测/补偿部分，用于基于第一计算器的输出累积量来获得振幅分量的延迟时间; 基于第二计算器的输出累积量获得相位分量的延迟时间; 通过使用延迟时间检测延迟波动量; 并调整振幅分量和相位分量的定时。

9. 发明申请

US20120105111A1 TRANSMITTER INCLUDING POLAR MODULATION CIRCUIT 有权
标题翻译：发射机，包括极性调制电路
公开(公告)号：US20120105111A1
公开(公告)日：2012-05-03
申请号：US13380947
申请日：2010-04-09
申请人： Masakatsu Maeda
发明人： Masakatsu Maeda
IPC分类号： H03C1/00 , H03B21/00
CPC分类号： H03F1/0205 , H03F3/24 , H03F2200/324 , H03F2200/336
摘要： Provided is a transmitter including a polar modulation circuit which adjusts a timing lag between an amplitude component and a phase component more accurately than a conventional art. The polar modulation circuit includes: an extraction section for extracting an amplitude component and a phase component from an input signal; a first processing section for performing a first signal process on the amplitude component; a second processing section for performing a second signal processing on the phase component; an amplifier for synthesizing an output of the first processing section and an output of the second processing section and amplifying the synthesized outputs; a first calculator for performing an exclusive OR logical operation between the amplitude component before being inputted to the first processing section and the amplitude component after having been inputted to the first processing section; a first accumulation section for accumulating outputs of the first calculator; a second calculator for performing an exclusive OR logical operation between the phase component before being inputted to the second processing section and the phase component after having been inputted to the second processing section; a second accumulation section for accumulating outputs of the second calculator; and a delay fluctuation detection/compensation section for obtaining a delay time of the amplitude component based on an amount of accumulation of the first accumulation section; obtaining a delay time of the phase component based on an amount of accumulation of the second accumulation section; detecting an amount of delay fluctuation by using the delay times; and adjusting timings of the amplitude component and the phase component.
摘要翻译：提供了一种发射器，其包括极限调制电路，其比常规技术更准确地调节幅度分量和相位分量之间的定时滞后。极坐标调制电路包括：提取部分，用于从输入信号中提取振幅分量和相位分量; 第一处理部分，用于对振幅分量执行第一信号处理; 第二处理部，对相位成分进行第二信号处理; 用于合成第一处理部分的输出和第二处理部分的输出并放大合成输出的放大器; 第一计算器，用于在输入到第一处理部分之前的幅度分量和已经被输入到第一处理部分之后的幅度分量之间执行异或逻辑运算; 第一累积部分，用于累积第一计算器的输出; 第二计算器，用于在输入到第二处理部分之前的相位分量和被输入到第二处理部分之后的相位分量之间执行异或逻辑运算; 第二累积部分，用于累积第二计算器的输出; 以及延迟波动检测/补偿部分，用于基于第一累积部分的累积量获得振幅分量的延迟时间; 基于第二累积部分的累积量获得相位分量的延迟时间; 通过使用延迟时间检测延迟波动量; 并调整振幅分量和相位分量的定时。

10. 发明授权

US08138428B2 Lead-embedded metallized ceramics substrate and package 失效
标题翻译：铅嵌入式金属化陶瓷基板和封装
公开(公告)号：US08138428B2
公开(公告)日：2012-03-20
申请号：US12279073
申请日：2007-02-07
申请人： Masakatsu Maeda , Yasuyuki Yamamoto
发明人： Masakatsu Maeda , Yasuyuki Yamamoto
IPC分类号： H05K1/11
CPC分类号： H01L23/10 , H01L23/15 , H01L24/48 , H01L33/483 , H01L33/56 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01004 , H01L2924/01012 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H05K1/0306 , H05K3/3447 , H05K3/3452 , H05K2201/09909 , H05K2201/10106 , H05K2201/10303 , Y10T29/49139 , Y10T29/49165 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A metallized ceramics substrate including: a ceramics body; a wiring pattern formed on one surface of the ceramics body; and a lead electrically-connected to the wiring pattern. The ceramics body has a through-hole, the lead penetrates the through-hole and sticks out from another surface of the ceramics body, and the lead is fixed by filling an electroconductive filler between the lead and the through-hole for keeping airtightness. The metallized ceramics substrate does not cause a problem of interlayer peeling and is excellent in airtightness and electric conductivity.
摘要翻译：一种金属化陶瓷基板，包括：陶瓷体; 形成在陶瓷体的一个表面上的布线图案; 以及电连接到布线图案的引线。陶瓷体具有通孔，引线穿透通孔并从陶瓷体的另一表面伸出，并且通过在引线和通孔之间填充导电填料来固定引线，以保持气密性。金属化陶瓷基板不会产生层间剥离的问题，气密性和导电性优异。

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