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1. 发明授权

US09222172B2 Surface treated aluminum nitride baffle 有权
标题翻译：表面处理的氮化铝挡板
公开(公告)号：US09222172B2
公开(公告)日：2015-12-29
申请号：US12195127
申请日：2008-08-20
申请人： Muhammad M. Rasheed , Dmitry Lubomirsky
发明人： Muhammad M. Rasheed , Dmitry Lubomirsky
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译：本文提供了与氮化铝挡板相关的方法和装置。在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于身体。在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

2. 发明授权

US07811411B2 Thermal management of inductively coupled plasma reactors 有权
标题翻译：电感耦合等离子体反应器的热管理
公开(公告)号：US07811411B2
公开(公告)日：2010-10-12
申请号：US11200431
申请日：2005-08-09
申请人： Siqing Lu , Qiwei Liang , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh , Muhammad M. Rasheed
发明人： Siqing Lu , Qiwei Liang , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh , Muhammad M. Rasheed
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32522 , H01J37/321
摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.
摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。框架适于将RF线圈支撑在适当位置。界面材料设置在框架和处理室的侧壁之间并与之热接触。界面材料的导热率为4.0W / mK以上。

3. 发明申请

US20090266299A1 LOW PROFILE PROCESS KIT 有权
标题翻译：低配置工艺包
公开(公告)号：US20090266299A1
公开(公告)日：2009-10-29
申请号：US12109187
申请日：2008-04-24
申请人： MUHAMMAD M. RASHEED , TERUKI IWASHITA , HIROSHI OTAKE , YUKI KOGA , KAZUTOSHI MAEHARA , XINGLONG CHEN , SUDHIR GONDHALEKAR , DMITRY LUBOMIRSKY
发明人： MUHAMMAD M. RASHEED , TERUKI IWASHITA , HIROSHI OTAKE , YUKI KOGA , KAZUTOSHI MAEHARA , XINGLONG CHEN , SUDHIR GONDHALEKAR , DMITRY LUBOMIRSKY
IPC分类号： C23C16/448
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

4. 发明申请

US20100252416A1 Sputtering Target for PVD Chamber 有权
标题翻译： PVD室的溅射靶
公开(公告)号：US20100252416A1
公开(公告)日：2010-10-07
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

5. 发明申请

US20220344134A1 PROCESS KIT FOR A SUBSTRATE SUPPORT 有权
公开(公告)号：US20220344134A1
公开(公告)日：2022-10-27
申请号：US17861324
申请日：2022-07-11
申请人： Muhannad MUSTAFA , Muhammad M. RASHEED , Yu LEI , Avgerinos V. GELATOS , Vikash BANTHIA , Victor H. CALDERON , Shi Wei TOH , Yung-Hsin LEE , Anindita SEN
发明人： Muhannad MUSTAFA , Muhammad M. RASHEED , Yu LEI , Avgerinos V. GELATOS , Vikash BANTHIA , Victor H. CALDERON , Shi Wei TOH , Yung-Hsin LEE , Anindita SEN
IPC分类号： H01J37/32
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

6. 发明授权

US09087679B2 Uniformity tuning capable ESC grounding kit for RF PVD chamber 有权
标题翻译：用于RF PVD室的均匀调谐ESC接地套件
公开(公告)号：US09087679B2
公开(公告)日：2015-07-21
申请号：US13365876
申请日：2012-02-03
申请人： Muhammad M. Rasheed , Rongjun Wang , Thanh X. Nguyen , Alan A. Ritchie
发明人： Muhammad M. Rasheed , Rongjun Wang , Thanh X. Nguyen , Alan A. Ritchie
IPC分类号： C23C14/34 , H01J37/34 , H01J37/32
CPC分类号： H01J37/34 , H01J37/32082 , H01J37/3441
摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

7. 发明申请

US20120199469A1 PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE 有权
标题翻译：带有保护背板的PVD溅射目标
公开(公告)号：US20120199469A1
公开(公告)日：2012-08-09
申请号：US13024198
申请日：2011-02-09
申请人： Muhammad M. RASHEED , Rongjun WANG
发明人： Muhammad M. RASHEED , Rongjun WANG
IPC分类号： C23C14/14 , C23C14/34
CPC分类号： C23C14/3407 , C22C9/00 , C22C9/04 , C22C19/03 , C23C14/3414 , H01J37/3426 , H01J37/3435
摘要： Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
摘要翻译：本发明的实施例提供了用于物理气相沉积（PVD）的溅射靶和形成这种溅射靶的方法。在一个实施例中，溅射靶包含设置在背板上的目标层和通常包含镍材料覆盖层并保护背衬板的区域的保护涂层，否则在PVD工艺期间将暴露于等离子体的区域。在许多实施例中，靶层含有镍 - 铂合金，背板含有铜合金（例如铜 - 锌），保护涂层含有金属镍。保护涂层消除了形成高度导电的铜污染物，通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。因此，在PVD工艺期间，PVD室的基板和内表面保持没有这种铜污染物。

8. 发明授权

US08022377B2 Method and apparatus for excimer curing 有权
标题翻译：准分子固化的方法和装置
公开(公告)号：US08022377B2
公开(公告)日：2011-09-20
申请号：US12107281
申请日：2008-04-22
申请人： Dmitry Lubomirsky , Muhammad M. Rasheed , Ellie Y. Yieh
发明人： Dmitry Lubomirsky , Muhammad M. Rasheed , Ellie Y. Yieh
IPC分类号： G21G5/00
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的装置。该装置包括具有壳体壁的壳体。电极配置在外壳内。管状体在电极周围。管状体包括外壁和内壁。至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

9. 发明申请

US20110209995A1 Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit 审中-公开
标题翻译：物理气相沉积与可变电容调谐器和反馈电路
公开(公告)号：US20110209995A1
公开(公告)日：2011-09-01
申请号：US12823893
申请日：2010-06-25
申请人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
发明人： Muhammad M. Rasheed , Ronald D. DeDore , Michael S. Cox , Keith A. Miller , Donny Young , John C. Forster , Adolph M. Allen , Lara Hawrylchak
IPC分类号： C23C14/34
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

10. 发明申请

US20110036709A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：US20110036709A1
公开(公告)日：2011-02-17
申请号：US12850312
申请日：2010-08-04
申请人： Lara Hawrylchak , Kirankumar Savandaiah , Muhammad M. Rasheed , Rongjun Wang , Adolph Miller Allen , Zhigang Xie
发明人： Lara Hawrylchak , Kirankumar Savandaiah , Muhammad M. Rasheed , Rongjun Wang , Adolph Miller Allen , Zhigang Xie
IPC分类号： C23C14/34
CPC分类号： H01L21/67017 , C23C14/34 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

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