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1. 发明授权

US08568610B2 Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate 有权
标题翻译：稳定的，可浓缩的化学机械抛光组合物和抛光基材的方法
公开(公告)号：US08568610B2
公开(公告)日：2013-10-29
申请号：US12885748
申请日：2010-09-20
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02
摘要： A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.
摘要翻译：提供了一种化学机械抛光组合物，其包括作为初始组分：水，研磨剂; 根据式（I）的二季物质; 根据式（II）的胍衍生物; 和任选的季铵盐。此外，提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括二氧化硅; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基底之间的界面处产生动态接触; 以及将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物的pH为2至6。

2. 发明授权

US08431490B2 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal 有权
标题翻译：用适于增强氧化硅去除的抛光组合物对衬底进行化学机械抛光的方法
公开(公告)号：US08431490B2
公开(公告)日：2013-04-30
申请号：US12750799
申请日：2010-03-31
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L31/31051
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括氧化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和根据式I的物质，其中R 1，R 2和R 3各自独立地选自C 1-4烷基; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中包括在化学机械抛光组合物中的根据式I的物质提供增强的氧化硅去除速率和改善的抛光缺陷性能; 并且其中所述氧化硅中的至少一些从所述衬底去除。

3. 发明申请

US20120036637A1 Rotating Bed to Reduce the Risk of Developing Pressure Ulcers 审中-公开
标题翻译：旋转床减少发展压力性溃疡的风险
公开(公告)号：US20120036637A1
公开(公告)日：2012-02-16
申请号：US12855949
申请日：2010-08-13
申请人： Hougong Wang , Zhendong Liu
发明人： Hougong Wang , Zhendong Liu
IPC分类号： A61G7/005 , A61G7/008
CPC分类号： A61G7/0573
摘要： Bed-bound patients are at risk for developing pressure ulcers after lying in the same position on a standard home/hospital bed for an extended period of time. In order to prevent pressure ulcers, patients' bodies need to be repositioned at certain time intervals by other personnel. This involves labor-intensive care, and the friction and shear forces during assisted turning often causes skin damage. The rotating bed enables bed-bound patients to reposition their body easily and frequently, thereby reducing external forces such as shearing forces and friction caused by assisted turning, and most importantly reducing the risk of developing pressure ulcers.
摘要翻译：卧床患者在标准家庭/医院病床上躺在相同位置上有长时间的压力性溃疡风险。为了防止压力性溃疡，患者的身体需要由其他人员以一定的时间间隔进行重新定位。这涉及劳动密集型护理，辅助转弯期间的摩擦力和剪切力通常会导致皮肤损伤。旋转床使得床位患者能够容易地和频繁地重新定位身体，从而减少由辅助转动引起的剪切力和摩擦力等外力，最重要的是降低发生压力性溃疡的风险。

4. 发明申请

US20110230049A1 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅和至少一种氧化硅和氮化硅的衬底的方法
公开(公告)号：US20110230049A1
公开(公告)日：2011-09-22
申请号：US12724721
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和无环有机磺酸化合物，其中所述无环有机磺酸化合物具有6至30个碳原子的无环疏水部分和具有10至300个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。

5. 发明授权

US07884032B2 Thin film deposition 有权
标题翻译：薄膜沉积
公开(公告)号：US07884032B2
公开(公告)日：2011-02-08
申请号：US11260899
申请日：2005-10-28
申请人： Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
发明人： Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
IPC分类号： H01L21/469
CPC分类号： H01L21/02046 , C23C14/345 , C23C14/35 , H01L21/28017 , H01L21/2855
摘要： A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
摘要翻译：一种系统，方法和装置能够在衬底上彼此层叠各种材料层，而不会使衬底暴露于周围空气的压力和污染物直到堆叠完成。在一个方面，层叠层可以包括一个或多个绝缘膜的绝缘层和一个或多个导电金属层膜的导电金属层。在另一方面，可以将正电压脉冲和负电压脉冲的偏置信号施加到沉积室的靶，以便以合适的方式沉积目标材料。在另一方面，一个或多个沉积室可以具有与其结合的泵，其将涡轮分子泵和低温泵组合以在该室中产生超高真空。描述和要求保护其他特征。

6. 发明申请

US20100112906A1 Chemical mechanical polishing composition and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US20100112906A1
公开(公告)日：2010-05-06
申请号：US12264928
申请日：2008-11-05
申请人： Zhendong Liu
发明人： Zhendong Liu
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ≦50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.
摘要翻译：一种使用包含水的化学机械抛光组合物的包含锗 - 锑 - 碲硫族化物相变合金的基底的化学机械抛光的方法; 1〜40重量％的平均粒径为＆amp; NEE的胶体二氧化硅磨料颗粒; 50nm; 和0-5重量％的季铵化合物; 其中化学机械抛光组合物不含氧化剂和螯合剂; 并且其中所述化学机械抛光组合物的pH> 6至12。

7. 发明申请

US20070095650A1 Protective offset sputtering 失效
标题翻译：保护性偏移溅射
公开(公告)号：US20070095650A1
公开(公告)日：2007-05-03
申请号：US11262193
申请日：2005-10-28
申请人： Mengqi Ye , Zhendong Liu , Peijun Ding
发明人： Mengqi Ye , Zhendong Liu , Peijun Ding
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/35 , C23C14/225 , C23C14/505 , H01J37/3408 , H01J37/3423 , H01J37/3455
摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，在物理气相沉积（PVD）室中的溅射可以利用相对于衬底的横向偏移和倾斜的目标。另一方面，可以减小目标功率以增强膜保护。在另一方面，磁控管磁体可以相对较强并且平衡良好以增强膜保护。在另一方面，可以提供快门以在启动条件下保护基板。描述和要求保护其他实施例。

8. 发明申请

US20070039246A1 Method for preparing polishing slurry 审中-公开
标题翻译：抛光浆料的制备方法
公开(公告)号：US20070039246A1
公开(公告)日：2007-02-22
申请号：US11493450
申请日：2006-07-26
申请人： Zhendong Liu
发明人： Zhendong Liu
IPC分类号： B24D3/02
CPC分类号： C09G1/02
摘要： The method for manufacturing polishing slurries is useful for polishing electronic substrates. The method includes preparing an aqueous intermediate dispersion, the aqueous intermediate dispersion containing solid particles; and introducing an azole compound into the aqueous intermediate dispersion to prevent biological activity and to form a stable intermediate dispersion. Then storing the stable intermediate dispersion; and introducing additional components to the stable intermediate dispersion to form a final polishing slurry.
摘要翻译：抛光浆料的制造方法对于研磨电子基板是有用的。该方法包括制备含水中间体分散体，含有固体颗粒的水性中间体分散体; 并将唑类化合物引入水性中间体分散体中以防止生物活性并形成稳定的中间体分散体。然后储存稳定的中间体分散体; 并将另外的组分引入到稳定的中间体分散体中以形成最终的研磨浆料。

9. 发明申请

US20050066585A1 High-rate barrier polishing composition 有权
标题翻译：高阻挡抛光组合物
公开(公告)号：US20050066585A1
公开(公告)日：2005-03-31
申请号：US10670534
申请日：2003-09-25
申请人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew VanHanehem
发明人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew VanHanehem
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321 , B24D3/02
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
摘要翻译：该解决方案可用于从半导体衬底去除阻挡材料。该溶液包含0.01-25重量％的氧化剂，0至15的有色金属抑制剂，0至15份磨料，0至20种有色金属络合剂，0.01至12种屏障去除剂和余量水。屏障去除剂选自亚胺衍生物化合物，肼衍生物化合物及其混合物。

10. 外观设计

USD1037599S1 Kayak roller with suction cup 有权
公开(公告)号：USD1037599S1
公开(公告)日：2024-07-30
申请号：US29927057
申请日：2024-02-02
申请人： Zhendong Liu
设计人： Zhendong Liu
摘要： FIG. 1 is a front perspective view of a kayak roller with suction cup, showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof; and,
FIG. 8 is another perspective view show in the kayak roller with suction cup in another state of use.
The broken lines in the drawings illustrate the portions of the kayak roller with suction cup, which form no part of the claimed design.

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