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1. 发明授权

US07811411B2 Thermal management of inductively coupled plasma reactors 有权
标题翻译：电感耦合等离子体反应器的热管理
公开(公告)号：US07811411B2
公开(公告)日：2010-10-12
申请号：US11200431
申请日：2005-08-09
申请人： Siqing Lu , Qiwei Liang , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh , Muhammad M. Rasheed
发明人： Siqing Lu , Qiwei Liang , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh , Muhammad M. Rasheed
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32522 , H01J37/321
摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.
摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。框架适于将RF线圈支撑在适当位置。界面材料设置在框架和处理室的侧壁之间并与之热接触。界面材料的导热率为4.0W / mK以上。

2. 发明授权

US07651587B2 Two-piece dome with separate RF coils for inductively coupled plasma reactors 失效
标题翻译：具有用于电感耦合等离子体反应器的单独RF线圈的两片式圆顶
公开(公告)号：US07651587B2
公开(公告)日：2010-01-26
申请号：US11202043
申请日：2005-08-11
申请人： Siqing Lu , Qiwei Liang , Canfeng Lai , Robert T. Chen , Jason T. Bloking , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh
发明人： Siqing Lu , Qiwei Liang , Canfeng Lai , Robert T. Chen , Jason T. Bloking , Irene Chou , Steven H. Kim , Young S. Lee , Ellie Y. Yieh
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/321 , H01J37/32431 , H01J37/32458
摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.
摘要翻译：衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。壳体包括侧壁和位于侧壁上方的圆顶。圆顶具有物理分离和不连续的部分。气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。高密度等离子体产生系统与处理室可操作地耦合。衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。控制器控制气体输送系统和高密度等离子体发生系统。

3. 发明申请

US20070029046A1 Methods and systems for increasing substrate temperature in plasma reactors 审中-公开
标题翻译：在等离子体反应器中提高衬底温度的方法和系统
公开(公告)号：US20070029046A1
公开(公告)日：2007-02-08
申请号：US11196850
申请日：2005-08-04
申请人： Shijian Li , Siqing Lu , Irene Chou , Young Lee , Tetsuya Ishikawa
发明人： Shijian Li , Siqing Lu , Irene Chou , Young Lee , Tetsuya Ishikawa
IPC分类号： C23F1/00 , H01L21/20 , C23C16/00
CPC分类号： C23C16/4581 , C23C16/505 , H01J37/321 , H01J37/32706 , H01J2237/2001 , H01J2237/3321 , H01L21/67069 , H01L21/67248 , H01L21/68742 , H01L21/6875 , H01L21/68757
摘要： A substrate processing system is provided. A housing defines a processing chamber. A plasma-generating system is operatively coupled to the processing chamber. A substrate support member is disposed within the processing chamber and configured to hold a substrate during substrate processing. A ceramic insert is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.
摘要翻译：提供了基板处理系统。壳体限定处理室。等离子体产生系统可操作地耦合到处理室。衬底支撑构件设置在处理室内并且构造成在衬底处理期间保持衬底。陶瓷插入件设置在衬底支撑构件上方，使得陶瓷插入件在衬底处理期间设置在衬底支撑构件和衬底之间。气体输送系统构造成将气体引入处理室。控制器控制等离子体产生系统和气体输送系统。

4. 发明申请

US20060075967A1 Magnetic-field concentration in inductively coupled plasma reactors 审中-公开
标题翻译：电感耦合等离子体反应堆中的磁场浓度
公开(公告)号：US20060075967A1
公开(公告)日：2006-04-13
申请号：US10963030
申请日：2004-10-12
申请人： Siqing Lu , Canfeng Lai , Qiwei Liang , Maolin Long , Irene Chou , Jason Bloking , Steven Kim , Ellie Yieh
发明人： Siqing Lu , Canfeng Lai , Qiwei Liang , Maolin Long , Irene Chou , Jason Bloking , Steven Kim , Ellie Yieh
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01J37/321 , C23C16/045 , C23C16/401 , C23C16/507 , H05B6/26
摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.
摘要翻译：衬底处理系统设置有限定处理室的壳体。衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。气体输送系统构造成将气体引入处理室。提供压力控制系统以保持处理室内的选定压力。高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

5. 发明申请

US20050218115A1 Anti-clogging nozzle for semiconductor processing 审中-公开
标题翻译：防堵塞喷嘴用于半导体加工
公开(公告)号：US20050218115A1
公开(公告)日：2005-10-06
申请号：US11080387
申请日：2005-03-14
申请人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Irene Chou , David Sun
发明人： Lawrence Lei , Siqing Lu , Steven Gianoulakis , Irene Chou , David Sun
IPC分类号： G01L21/30 , H01L21/302
CPC分类号： C23C16/45563
摘要： Embodiments of the present invention are directed to reducing clogging of nozzles and to reducing flow variance through the nozzles in a semiconductor processing chamber. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply. The nozzle includes a nozzle opening at a distal end. The nozzle includes a nozzle passage extending from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber; and choking the gas flow through the nozzle passage at a choke location which is spaced away from the distal end.
摘要翻译：本发明的实施例涉及减少喷嘴堵塞和减少半导体处理室中的喷嘴的流动变化。在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分半导体处理室的内部。喷嘴包括与气体供应连接的近端。喷嘴包括在远端的喷嘴开口。喷嘴包括从近端延伸到远端的喷嘴通道。该方法还包括使气体从气体供应通过喷嘴的近端，喷嘴通道和喷嘴开口流入半导体处理室的内部; 并且在与远端间隔开的扼流位置处阻塞气体流过喷嘴通道。

6. 发明申请

US20070037397A1 Two-piece dome with separate RF coils for inductively coupled plasma reactors 失效
标题翻译：具有用于电感耦合等离子体反应器的单独RF线圈的两片式圆顶
公开(公告)号：US20070037397A1
公开(公告)日：2007-02-15
申请号：US11202043
申请日：2005-08-11
申请人： Siqing Lu , Qiwei Liang , Canfeng Lai , Robert Chen , Jason Bloking , Irene Chou , Steven Kim , Young Lee , Ellie Yieh
发明人： Siqing Lu , Qiwei Liang , Canfeng Lai , Robert Chen , Jason Bloking , Irene Chou , Steven Kim , Young Lee , Ellie Yieh
IPC分类号： H01L21/302
CPC分类号： H01J37/3244 , H01J37/321 , H01J37/32431 , H01J37/32458
摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.
摘要翻译：衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。壳体包括侧壁和位于侧壁上方的圆顶。圆顶具有物理分离和不连续的部分。气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。高密度等离子体产生系统与处理室可操作地耦合。衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。控制器控制气体输送系统和高密度等离子体发生系统。

7. 发明申请

US20070034153A1 Thermal management of inductively coupled plasma reactors 有权
标题翻译：电感耦合等离子体反应器的热管理
公开(公告)号：US20070034153A1
公开(公告)日：2007-02-15
申请号：US11200431
申请日：2005-08-09
申请人： Siqing Lu , Qiwei Liang , Irene Chou , Steven Kim , Young Lee , Ellie Yieh , Muhammad Rasheed
发明人： Siqing Lu , Qiwei Liang , Irene Chou , Steven Kim , Young Lee , Ellie Yieh , Muhammad Rasheed
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32522 , H01J37/321
摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.
摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。框架适于将RF线圈支撑在适当位置。界面材料设置在框架和处理室的侧壁之间并与之热接触。界面材料的导热率为4.0W / mK以上。

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