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    • 1. 发明申请
    • PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE
    • 带有保护背板的PVD溅射目标
    • US20120199469A1
    • 2012-08-09
    • US13024198
    • 2011-02-09
    • Muhammad M. RASHEEDRongjun WANG
    • Muhammad M. RASHEEDRongjun WANG
    • C23C14/14C23C14/34
    • C23C14/3407C22C9/00C22C9/04C22C19/03C23C14/3414H01J37/3426H01J37/3435
    • Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
    • 本发明的实施例提供了用于物理气相沉积(PVD)的溅射靶和形成这种溅射靶的方法。 在一个实施例中,溅射靶包含设置在背板上的目标层和通常包含镍材料覆盖层并保护背衬板的区域的保护涂层,否则在PVD工艺期间将暴露于等离子体的区域。 在许多实施例中,靶层含有镍 - 铂合金,背板含有铜合金(例如铜 - 锌),保护涂层含有金属镍。 保护涂层消除了形成高度导电的铜污染物,通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。 因此,在PVD工艺期间,PVD室的基板和内表面保持没有这种铜污染物。