专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130297329A1 Method for Brokering Purchases of Procedural Services 审中-公开
标题翻译：中介程序服务采购方法
公开(公告)号：US20130297329A1
公开(公告)日：2013-11-07
申请号：US13672508
申请日：2012-11-08
申请人： Vikash Banthia , Vishal Banthia
发明人： Vikash Banthia , Vishal Banthia
IPC分类号： G06Q50/22
CPC分类号： G06Q30/0615 , G06Q10/1095 , G06Q30/08 , G06Q50/22
摘要： A method for brokering purchases of procedural services between a buyer and at least one professional service provider is a software-based system that negotiates transactions between potential clients and professional service providers by receiving, verifying, and negotiating appointment availabilities and appointment offers while providing privacy to both parties until a transaction is conducted. The system comprises the steps of receiving and indexing appointment openings from providers, receiving and indexing appointment offers from buyers, matching appointment opening with appointment offers, anonymizing appointment offers, and negotiating the exchange of personal information between both parties when a transaction is conducted, as well as provide ancillary product suggestions. The system provides functionality to match a submitted appointment offer anonymously with at least one professional service provider. Additionally, the system provides automated features that improve matching of the appointment opening and the appointment offer by user submitted parameters of system derived value optimums.
摘要翻译：买方和至少一个专业服务提供者间接购买程序服务的方法是一种基于软件的系统，通过接收，验证和协商潜在客户和专业服务提供商之间的交易，同时提供隐私权双方直到进行交易。该系统包括以下步骤：接收和索引提供者的约会开放，接收和索引来自买方的约会提议，匹配约会开放与约会提议，匿名约会提供，以及在进行交易时双方交流个人信息，作为以及提供配套产品建议。该系统提供了与至少一个专业服务提供商匿名提交的约会提供的功能。此外，该系统提供自动化功能，可改善用户提交的系统派生值最优参数的约会开放和约会提供的匹配。

2. 发明申请

US20070212847A1 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL 审中-公开
标题翻译：薄膜薄膜多层退化和改良胶圈
公开(公告)号：US20070212847A1
公开(公告)日：2007-09-13
申请号：US11697105
申请日：2007-04-05
申请人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
发明人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L21/67115
摘要： A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.
摘要翻译：一种退火衬底的方法，该衬底具有包含形成在介电材料和衬底之间的氮化硅层上的电介质材料的沟槽，其中所述方法包括在第一温度为约800℃或更高的第一温度下退火衬底包含含氧气体的气氛，并在不含氧气的第二气氛中在大约800℃至大约1400℃的第二温度下退火所述基板。

3. 发明申请

US20110151676A1 METHODS OF THIN FILM PROCESS 审中-公开
标题翻译：薄膜工艺方法
公开(公告)号：US20110151676A1
公开(公告)日：2011-06-23
申请号：US13039724
申请日：2011-03-03
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/31
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

4. 发明授权

US07642171B2 Multi-step anneal of thin films for film densification and improved gap-fill 有权
标题翻译：用于膜致密化和改善间隙填充的薄膜的多步退火
公开(公告)号：US07642171B2
公开(公告)日：2010-01-05
申请号：US10990002
申请日：2004-11-16
申请人： Nitin K. Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali J. L. Forstner , Rong Pan
发明人： Nitin K. Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali J. L. Forstner , Rong Pan
IPC分类号： H01L21/76
CPC分类号： H01L21/324 , H01L21/02164 , H01L21/02271 , H01L21/02337 , H01L21/31612 , H01L21/31662 , H01L21/67115 , H01L21/76224 , H01L21/76283
摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
摘要翻译：一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底，含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

5. 发明申请

US20080182382A1 METHODS OF THIN FILM PROCESS 有权
标题翻译：薄膜工艺方法
公开(公告)号：US20080182382A1
公开(公告)日：2008-07-31
申请号：US11947674
申请日：2007-11-29
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/762
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

6. 发明授权

US07456116B2 Gap-fill depositions in the formation of silicon containing dielectric materials 失效
标题翻译：在形成含硅介电材料时的间隙填充沉积
公开(公告)号：US07456116B2
公开(公告)日：2008-11-25
申请号：US11018381
申请日：2004-12-20
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/45523 , C23C16/52
摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
摘要翻译：一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS，和TOMCATS。该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

7. 发明申请

US20070000897A1 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL 审中-公开
标题翻译：薄膜薄膜多层退化和改良胶圈
公开(公告)号：US20070000897A1
公开(公告)日：2007-01-04
申请号：US11423651
申请日：2006-06-12
申请人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
发明人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
IPC分类号： H01L21/324 , H05B3/00
CPC分类号： H01L21/324 , H01L21/02164 , H01L21/02271 , H01L21/02337 , H01L21/31612 , H01L21/31662 , H01L21/67115 , H01L21/76224 , H01L21/76283
摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
摘要翻译：一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底，含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

8. 发明申请

US20220344134A1 PROCESS KIT FOR A SUBSTRATE SUPPORT 有权
公开(公告)号：US20220344134A1
公开(公告)日：2022-10-27
申请号：US17861324
申请日：2022-07-11
申请人： Muhannad MUSTAFA , Muhammad M. RASHEED , Yu LEI , Avgerinos V. GELATOS , Vikash BANTHIA , Victor H. CALDERON , Shi Wei TOH , Yung-Hsin LEE , Anindita SEN
发明人： Muhannad MUSTAFA , Muhammad M. RASHEED , Yu LEI , Avgerinos V. GELATOS , Vikash BANTHIA , Victor H. CALDERON , Shi Wei TOH , Yung-Hsin LEE , Anindita SEN
IPC分类号： H01J37/32
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

9. 发明申请

US20080115726A1 GAP-FILL DEPOSITIONS INTRODUCING HYDROXYL-CONTAINING PRECURSORS IN THE FORMATION OF SILICON CONTAINING DIELECTRIC MATERIALS 审中-公开
标题翻译： GAP-FILL沉积物介绍含羟基的前驱体在形成含硅介质材料
公开(公告)号：US20080115726A1
公开(公告)日：2008-05-22
申请号：US11941793
申请日：2007-11-16
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
IPC分类号： B05C11/00
CPC分类号： H01L21/76837 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/76224
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

10. 发明授权

US07335609B2 Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials 有权
标题翻译：在含硅介电材料的形成中引入含羟基的前体的间隙填充沉积
公开(公告)号：US07335609B2
公开(公告)日：2008-02-26
申请号：US11213612
申请日：2005-08-26
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
IPC分类号： H01L21/31 , H01L21/76
CPC分类号： H01L21/76837 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/76224
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式