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1. 发明授权

US10056237B2 Low pressure arc plasma immersion coating vapor deposition and ion treatment 有权
公开(公告)号：US10056237B2
公开(公告)日：2018-08-21
申请号：US13840305
申请日：2013-03-15
申请人： Vapor Technologies, Inc.
发明人： Vladimir Gorokhovsky , William Grant , Edward Taylor , David Humenik
IPC分类号： H01J37/34 , C23C14/32 , C23C14/35 , H01J37/32
CPC分类号： H01J37/3438 , C23C14/32 , C23C14/325 , C23C14/35 , C23C14/355 , H01J37/32055 , H01J37/32357 , H01J37/34 , H01J37/3405 , H01J37/3417
摘要： A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically coupled to the cathode target, and a cathode chamber assembly. The cathode chamber assembly includes a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines an opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension. A primary power supply is connected between the cathode target and the primary anode while a secondary power supply is connected between the cathode target and the remote anode. Characteristically, a linear remote anode dimension and a vapor source short dimension are parallel to a dimension in which an arc spot is steered along the cathode target.

2. 发明申请

US20180218890A1 SPUTTERING COIL PRODUCT AND METHOD OF MAKING 审中-公开
公开(公告)号：US20180218890A1
公开(公告)日：2018-08-02
申请号：US15746647
申请日：2016-07-18
申请人： HONEYWELL INTERNATIONAL INC.
发明人： John A. DUNLOP , Kevin T. HUBERT , Jacob C. RUZICKA , Andrew N.A. WRAGG , Michael D. BLONDELL , William P. JARDEE , Phillip F. JOHN , Edward P. LARA , Wayne D. MEYER , Adam P. DAUB , Scott A. BUCKHART , Travis C. JUNTTILA
IPC分类号： H01J37/34 , H01F7/06 , H01F27/28 , C23C14/35
CPC分类号： H01J37/3458 , C23C14/34 , C23C14/35 , H01F7/06 , H01F27/28 , H01F27/2847 , H01J37/00 , H01J37/3211 , H01J37/32871 , H01J37/3438 , H01J37/3488
摘要： A high surface area coil for use with a physical vapor deposition apparatus comprising a first surface. At least a portion of the first surface has a macrotexture with a surface roughness between about 15 μm and about 150 μm. At least a portion of the first surface has a microtexture with a surface roughness between about 2 μm and 15 μm.

3. 发明申请

US20180197719A1 METHOD OF PROCESSING A SUBSTRATE USING AN ION BEAM AND APPARATUS FOR PERFORMING THE SAME 审中-公开
公开(公告)号：US20180197719A1
公开(公告)日：2018-07-12
申请号：US15606025
申请日：2017-05-26
申请人： Samsung Electronics Co., Ltd.
发明人： Yil-Hyung Lee , Yoo-Chul Kong , Jong-Kyu Kim , Seok-Woo Nam , Jong-Soon Park , Kyoung-Sub Shin
IPC分类号： H01J37/32 , H01J37/34 , C23C14/34 , C23C14/50
CPC分类号： H01J37/32412 , H01J37/32422 , H01J37/3435 , H01J37/3438 , H01J2237/083 , H01J2237/334
摘要： In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

4. 发明申请

US20170342547A1 SPUTTERING APPARATUS AND SPUTTERING METHOD USING THE SAME 审中-公开
公开(公告)号：US20170342547A1
公开(公告)日：2017-11-30
申请号：US15395274
申请日：2016-12-30
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Seungho CHOI , Haeyoung YOO , Kanghee LEE
IPC分类号： C23C14/35 , H01F7/02 , H01J37/32 , H01F7/20 , H01J37/34 , C23C14/34
CPC分类号： C23C14/352 , H01F7/0273 , H01F7/20 , H01J37/32715 , H01J37/3405 , H01J37/3414 , H01J37/3438 , H01J37/3452 , H01J37/3464 , H01J37/3476
摘要： A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage.

5. 发明申请

US20170316924A1 NON-DISAPPEARING ANODE FOR USE WITH DIELECTRIC DEPOSITION 审中-公开
公开(公告)号：US20170316924A1
公开(公告)日：2017-11-02
申请号：US15432590
申请日：2017-02-14
申请人： Applied Materials, Inc.
发明人： Michael S. COX , Lara HAWRYLCHAK , Brian T. WEST
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34 , H01L21/02
CPC分类号： H01J37/3438 , C23C14/34 , C23C14/564 , H01J37/32541 , H01J37/32568 , H01L21/02164 , H01L21/02266
摘要： Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

6. 发明授权

US09536714B2 Sputtering target having increased power compatibility 有权
标题翻译：溅射目标具有增加的功率兼容性
公开(公告)号：US09536714B2
公开(公告)日：2017-01-03
申请号：US14783168
申请日：2014-04-07
申请人： Oerlikon Surface Solutions AG, Trübbach
发明人： Siegfried Krassnitzer , Juerg Hagmann , Joerg Kerschbaumer
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3438 , H01J37/3467 , H01J37/3497
摘要： A plate-centering system that has a plate with a holder, in which the plate is centered in the holder both at room temperature and at higher temperatures, independently of the thermal expansion of the plate and the holder, and the plate can freely expand in the holder at higher temperatures. The invention relates in particular to a target having a frame-shaped target mount, which is very well suited for use in a coating source for high power pulsed magnetron sputtering of the target.
摘要翻译：板对中系统，其具有带有保持器的板，其中板在室温和较高温度下在保持器中居中，独立于板和保持器的热膨胀，并且板可自由地膨胀持有人在较高的温度。本发明具体涉及一种具有框架状目标安装座的靶，其非常适合用于靶材的大功率脉冲磁控溅射用涂层源。

7. 发明授权

US09508532B2 Magnetron plasma apparatus 有权
标题翻译：磁控管等离子体装置
公开(公告)号：US09508532B2
公开(公告)日：2016-11-29
申请号：US14206197
申请日：2014-03-12
申请人： BB PLASMA DESIGN AB
发明人： Ladislav Bardos , Hana Barankova
IPC分类号： C23C14/00 , H01J37/34 , H01J37/32 , C23C14/35
CPC分类号： H01J37/3405 , C23C14/3407 , C23C14/35 , C23C14/352 , H01J37/32596 , H01J37/3402 , H01J37/342 , H01J37/3423 , H01J37/3438 , H01J37/345
摘要： A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas.
摘要翻译：由空心阴极等离子体增强的磁控管等离子体装置包括至少一个电连接的一对第一中空阴极板和第二中空阴极板，该第一空心阴极板和第二中空阴极板以至少0.1mm的间隔距离彼此相对放置，在磁控管靶上形成溅射侵蚀区，使得磁控管磁场在板之间的中空阴极狭缝内形成垂直的磁性部件，并且其中板与磁控管靶一起连接到第一发电机，以产生磁性分散在中空阴极狭缝中的第一工作气体中的至少一个中的增强的空心阴极等离子体以及与在第一工作气体和第二工作气体中的至少一个中产生的磁控管等离子体接触的狭缝外部的第二工作气体。

8. 发明申请

US20160300700A1 Anode Shield 审中-公开
标题翻译：阳极盾
公开(公告)号：US20160300700A1
公开(公告)日：2016-10-13
申请号：US15073552
申请日：2016-03-17
申请人： Vision Ease, LP
发明人： Michael Marshall , Jeff Brown
IPC分类号： H01J37/34
CPC分类号： H01J37/3441 , H01J37/32477 , H01J37/32871 , H01J37/34 , H01J37/3438 , H01J37/3447 , H01J37/345 , H01J2237/026 , H01J2237/3323
摘要： A sputter system and an anode and anode shield assembly that provide for improved grounding for extended sputter cycles.
摘要翻译：溅射系统和阳极和阳极屏蔽组件，其提供用于延长溅射循环的改进的接地。

9. 发明授权

US09406487B2 Plasma enhanced chemical vapor deposition (PECVD) source 有权
标题翻译：等离子体增强化学气相沉积（PECVD）源
公开(公告)号：US09406487B2
公开(公告)日：2016-08-02
申请号：US14138833
申请日：2013-12-23
申请人： Sputtering Components, Inc.
发明人： Daniel Theodore Crowley , Patrick Lawrence Morse , William A. Meredith, Jr. , John Robert German , Michelle Lynn Neal
IPC分类号： H01J7/24 , H05B31/26 , H01J37/34
CPC分类号： H01J37/3405 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01J37/345
摘要： One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.
摘要翻译：一个实施例涉及一种等离子体源，包括其中形成空腔的主体和设置在空腔内的至少两个独立的磁控管组件。磁控管组件彼此电气隔离并与主体相互隔离。在这种实施例的一个实现中，独立的磁控管组件包括闭合漂移磁控管组件。公开了其他实施例。

10. 发明申请

US20160115585A1 APPARATUS FOR DIRECT-WRITE SPUTTER DEPOSITION AND METHOD THEREFOR 审中-公开
标题翻译：直接写入溅射剂沉积的方法及其方法
公开(公告)号：US20160115585A1
公开(公告)日：2016-04-28
申请号：US14920293
申请日：2015-10-22
申请人： Case Western Reserve University
发明人： Edwin D. Burwell , Andrew C. Barnes , Christian A. Zorman , Philip X.L. Feng , R. Mohan Sankaran
IPC分类号： C23C14/35 , C23C14/34 , C23C14/14
CPC分类号： C23C14/35 , C23C14/04 , C23C14/14 , C23C14/3414 , H01J37/32596 , H01J37/34 , H01J37/3402 , H01J37/3438
摘要： A microplasma sputter deposition system suitable for directly writing two-dimensional and three-dimensional structures on a substrate is disclosed. Deposition systems in accordance with the present invention include a magnetic-field generator that provides a magnetic field that is aligned with the arrangement of an anode and a wire target. This results in a plasma discharge within a region between a wire target and an anode that is substantially a uniform sheet, which gives rise to the deposition of material on the substrate in highly uniform and radially symmetric fashion.
摘要翻译：公开了一种适用于在基板上直接写入二维和三维结构的微量溅射沉积系统。根据本发明的沉积系统包括提供与阳极和线靶的布置对准的磁场的磁场发生器。这导致在线材靶和阳极之间的区域内的等离子体放电，其基本上是均匀的片材，这导致材料以高度均匀和径向对称的方式沉积在衬底上。

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