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1. 发明申请

US20130070518A1 ANTIFERROMAGNETIC STORAGE DEVICE 有权
标题翻译：抗真菌储存装置
公开(公告)号：US20130070518A1
公开(公告)日：2013-03-21
申请号：US13234073
申请日：2011-09-15
申请人： Donald M. Eigler , Andreas J. Heinrich , Sebastian Loth , Christopher P. Lutz
发明人： Donald M. Eigler , Andreas J. Heinrich , Sebastian Loth , Christopher P. Lutz
IPC分类号： G11C11/00 , H01F1/04 , G11B5/64 , B82Y25/00
CPC分类号： G11C11/161 , B82Y10/00 , B82Y25/00 , G11B5/64 , G11B5/66 , G11B9/1472 , G11B9/149 , G11C11/1673 , G11C11/1675 , H01F1/0009 , H01F10/002 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08 , Y10S977/838 , Y10S977/935 , Y10S977/943
摘要： An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.
摘要翻译：根据一个实施方案的反铁磁性纳米结构包括具有至少两个具有至少两个磁状态的阵列，所述至少两个磁状态即使在与外部结构不相互作用的情况下，对于至少一皮秒是稳定的，该阵列具有净磁矩为零或约零，其中该阵列沿其最长尺寸具有100个原子或更小。根据一个实施例的原子尺度结构具有零或约零的净磁矩; 两个或多个稳定的磁状态; 并且具有具有沿着一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。这种结构可用于以超高密度存储数据。

2. 发明授权

US5166919A Atomic scale electronic switch 失效
标题翻译：原子电子开关
公开(公告)号：US5166919A
公开(公告)日：1992-11-24
申请号：US728447
申请日：1991-07-11
申请人： Donald M. Eigler
发明人： Donald M. Eigler
IPC分类号： G11C11/00 , G01Q30/00 , G01Q60/40 , G01Q60/42 , G11B9/00 , G11B11/00 , G11C11/56 , G11C13/02 , H03K17/51 , H03K17/54 , H03K17/56 , H03K19/00 , H03K19/02
CPC分类号： G11C13/0014 , B82Y10/00 , G11B11/002 , G11B9/14 , G11B9/1463 , G11C11/5664 , G11C13/02 , H03K17/51 , H03K17/545 , H03K19/02 , G11C13/025 , G11C13/04 , Y10S977/936 , Y10S977/947 , Y10T307/826 , Y10T307/839
摘要： The present invention relate to an atomic scale electronic switch wherein the position of one or more atoms (12, 20) or molecules is varied to control the state of the switch. Terminals (10, 11, 21-23) may be tips of scanning tunneling microscopes or STMs. A change in position of the switch will result in a change in conductance between the spaced apart terminals. Voltage or current pulses cause the switching element (12) to change positions.
摘要翻译：本发明涉及一种原子级电子开关，其中一个或多个原子（12,20）或分子的位置被改变以控制开关的状态。端子（10,11,21-23）可能是扫描隧道显微镜或STM的技巧。开关位置的变化将导致间隔开的端子之间的电导的变化。电压或电流脉冲使开关元件（12）改变位置。

3. 发明授权

US08724376B2 Antiferromagnetic storage device 有权
标题翻译：反铁磁存储装置
公开(公告)号：US08724376B2
公开(公告)日：2014-05-13
申请号：US13234073
申请日：2011-09-15
申请人： Donald M. Eigler , Andreas J. Heinrich , Sebastian Loth , Christopher P. Lutz
发明人： Donald M. Eigler , Andreas J. Heinrich , Sebastian Loth , Christopher P. Lutz
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , B82Y10/00 , B82Y25/00 , G11B5/64 , G11B5/66 , G11B9/1472 , G11B9/149 , G11C11/1673 , G11C11/1675 , H01F1/0009 , H01F10/002 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08 , Y10S977/838 , Y10S977/935 , Y10S977/943
摘要： An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.
摘要翻译：根据一个实施方案的反铁磁性纳米结构包括具有至少两个具有至少两个磁状态的阵列，所述至少两个磁状态即使在与外部结构不相互作用的情况下，对于至少一皮秒是稳定的，该阵列具有净磁矩为零或约零，其中该阵列沿其最长尺寸具有100个原子或更小。根据一个实施例的原子尺度结构具有零或约零的净磁矩; 两个或多个稳定的磁状态; 并且具有具有沿着一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。这种结构可用于以超高密度存储数据。

4. 发明授权

US5323376A Atomic scale electronic switch 失效
标题翻译：原子电子开关
公开(公告)号：US5323376A
公开(公告)日：1994-06-21
申请号：US918752
申请日：1992-07-27
申请人： Donald M. Eigler
发明人： Donald M. Eigler
IPC分类号： G11C11/00 , G01Q30/00 , G01Q60/40 , G01Q60/42 , G11B9/00 , G11B11/00 , G11C11/56 , G11C13/02 , H03K17/51 , H03K17/54 , H03K17/56 , H03K19/00 , H03K19/02 , H01J37/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11B11/002 , G11B9/14 , G11B9/1463 , G11C11/5664 , G11C13/02 , H03K17/51 , H03K17/545 , H03K19/02 , G11C13/025 , G11C13/04 , Y10S977/936 , Y10S977/947 , Y10T307/826 , Y10T307/839
摘要： The present invention relates to an atomic scale electronic switch; wherein the position of one or more atoms or molecules is or are varied to control the state of the switch. The switch includes a plurality of fixed terminals approximately separated less than 100 .ANG.. Controlling the state of the switch is accomplished by applying a voltage or current to the terminals, thereby moving at least one atoms toward a desired terminal.
摘要翻译：本发明涉及一种原子级电子开关; 其中一个或多个原子或分子的位置是或被改变以控制开关的状态。开关包括大致分开的多个固定端子小于100安培。通过向端子施加电压或电流来实现控制开关的状态，从而将至少一个原子移向期望的端子。

5. 发明授权

US5144148A Process for repositioning atoms on a surface using a scanning tunneling microscope 失效
标题翻译：使用扫描隧道显微镜在表面上记录表面的方法
公开(公告)号：US5144148A
公开(公告)日：1992-09-01
申请号：US569270
申请日：1990-08-17
申请人： Donald M. Eigler
发明人： Donald M. Eigler
IPC分类号： C23C26/00 , B82B3/00 , C07B61/00 , G01Q60/12 , G01Q80/00 , G11B9/00 , G11B9/14 , H01J37/28 , H01J37/30 , H01L21/02 , H01L21/20 , H01L51/00
CPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , C07B61/00 , G11B9/14 , G11B9/1436 , H01L51/00 , B82Y10/00 , Y10S977/858
摘要： A method and structure in which an adsorbate atom or molecule is repositioned on a substrate surface by moving the tip of an STM to a position adjacent to the atom to be moved and causing the atom to be attracted to the tip. While the atom remains bound to the surface (or, alternatively, is lifted), the tip is moved laterally to drag (or carry) the atom to a desired position at which it is bound to the surface.The atom may be repositioned in close proximity to an atom of the same or another type on the same or a different substrate to create a desired multi-atom structure or synthesize a molecule, or an atom may be removed to cleave a multi-atom structure, or a change in state of a multi-atom structure may be effected.Atoms may also be repositioned to write indicia on a storage medium by dragging or carrying atoms into the desired information-bearing pattern, for example, by dragging or carrying selected atoms out of a respective one of a plurality of parallel atom rows using the tip of an STM to thereby write indicia at locations denoted by the removed atoms.

6. 发明授权

US4987312A Process for repositioning atoms on a surface using a scanning tunneling microscope 失效
标题翻译：使用扫描隧道显微镜重新定位表面上的原子的方法
公开(公告)号：US4987312A
公开(公告)日：1991-01-22
申请号：US432657
申请日：1989-11-07
申请人： Donald M. Eigler
发明人： Donald M. Eigler
IPC分类号： B82B3/00 , C07B61/00 , G11B9/00 , H01L51/00
CPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , C07B61/00 , G11B9/14 , G11B9/1436 , H01L51/00 , B82Y10/00 , Y10S977/858
摘要： A method is disclosed for repositioning an adsorbate atom or molecule on a substrate surface by moving the tip of a STM to a position adjacent the atom to be moved and subsequently increasing the attraction between the tip and atom by moving the tip closer to the substrate, and then, while the atom remains bound to the surface, moving the tip laterally to drag the atom to a desired position on the surface. The tip is then moved away from the substrate, reducing the attraction between the atom and tip and leaving the atom bound at the desired position.The atom may be repositioned in close proximity to an atom of the same or another type on the same or a different substrate to create a desired multi-atom structure or synthesize a molecule.Atoms may also be repositioned to write indicia on a storage medium by dragging atoms into the desired information bearing pattern, for example, by dragging selected atoms out of a respective one of a plurality of parallel atom rows using the tip of a STM to thereby write indicia at locations denoted by the removed atoms.
摘要翻译：公开了一种通过将STM的尖端移动到邻近待移动原子的位置并随后通过将尖端更靠近基底而增加尖端和原子之间的吸引力来重新定位基底表面上的被吸附物原子或分子的方法，然后，当原子保持结合到表面时，侧向移动尖端以将原子拖动到表面上的期望位置。然后将尖端从衬底移开，减少原子和尖端之间的吸引力，并使原子结合在所需位置。原子可以重新定位在相同或不同底物上的相同或另一类型的原子附近，以产生所需的多原子结构或合成分子。原子也可以被重新定位以通过将原子拖动到期望的信息承载模式中而在存储介质上写入标记，例如通过使用STM的尖端从多个并行原子行中的相应一个原子行中拖出所选择的原子，从而写入标记在由去除的原子表示的位置。

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