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1. 发明申请

US20160064014A1 METHOD OF PRODUCING A DATA STORAGE MEDIUM 有权
公开(公告)号：US20160064014A1
公开(公告)日：2016-03-03
申请号：US14840087
申请日：2015-08-31
申请人： International Business Machines Corporation
发明人： Urs T. Duerig , Bernd W. Gotsmann , Armin W. Knoll
IPC分类号： G11B3/70 , C09D165/00 , G11B3/72
CPC分类号： G11B3/705 , B05D1/286 , B29C33/60 , B29C43/00 , B82Y10/00 , C09D165/00 , G11B3/72 , G11B9/1472 , G11B9/149 , G11B11/002
摘要： The present invention relates a method of producing a data storage medium comprising the steps of: a) coating a layer comprising a polymer material onto at least a part of a template surface thereby to obtain a modified template surface; b) clamping the modified template surface produced in step (a) with a target surface thereby to obtain an assembly; and c) introducing a liquid to an environment of the assembly obtained in step (b) thereby to transfer the layer comprising the polymer material of the modified template surface onto at least an adjacent region on the target surface.

2. 发明申请

US20140301178A1 METHOD AND DEVICE FOR HIGH DENSITY DATA STORAGE 有权
标题翻译：用于高密度数据存储的方法和装置
公开(公告)号：US20140301178A1
公开(公告)日：2014-10-09
申请号：US14244099
申请日：2014-04-03
申请人： International Business Machines Corporation
发明人： Urs T. DUERIG , Bernd W. GOTSMANN , Armin W. KNOLL , David S. PIRES
IPC分类号： G11B9/14 , G11B11/00
CPC分类号： C08G8/28 , B82Y10/00 , C08G73/10 , G11B9/14 , G11B9/1472 , G11B9/149 , G11B11/007 , Y10T428/21 , Y10T428/24355 , Y10T428/24612 , Y10T428/265 , Y10T428/31623 , Y10T428/31721
摘要： A local probe storage array is provided that includes a substrate, and a polymeric layer over the substrate, the polymeric layer comprising a crosslinking agent that has been cured, the crosslinking agent comprising at least three alkyne groups.
摘要翻译：提供了本地探针存储阵列，其包括基底和在基底上的聚合物层，所述聚合物层包含已固化的交联剂，所述交联剂包含至少三个炔基。

3. 发明授权

US08642155B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium 有权
标题翻译：使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
公开(公告)号：US08642155B2
公开(公告)日：2014-02-04
申请号：US13533717
申请日：2012-06-26
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： G11B7/24
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

4. 发明授权

US08488436B2 High density data storage medium, method and device 失效
公开(公告)号：US08488436B2
公开(公告)日：2013-07-16
申请号：US13365408
申请日：2012-02-03
申请人： Richard Anthony DiPietro , Urs T. Duerig , Jane Elizabeth Frommer , Bernd Walter Gotsmann , Erik Christopher Hagberg , James Lupton Hedrick , Armin W. Knoll , Teddie Peregrino Magbitang , Robert Dennis Miller , Russell Clayton Pratt , Charles-Gordon Wade
发明人： Richard Anthony DiPietro , Urs T. Duerig , Jane Elizabeth Frommer , Bernd Walter Gotsmann , Erik Christopher Hagberg , James Lupton Hedrick , Armin W. Knoll , Teddie Peregrino Magbitang , Robert Dennis Miller , Russell Clayton Pratt , Charles-Gordon Wade
IPC分类号： G11B3/00 , B05D3/00 , B05D5/00
CPC分类号： G11B9/149 , B82Y10/00 , C08G65/4012 , C08G65/46 , G11B9/1472 , G11B11/007
摘要： A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone copolymers, each of the one or more polyaryletherketone copolymers comprising (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a first phenylethynyl moiety, each of the one or more polyaryletherketone copolymers having two terminal ends, each terminal end having a phenylethynyl moiety the same as or different from the first phenylethynyl moiety. The one or more polyaryletherketone copolymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layer in an atomic force data storage device.

5. 发明授权

US08410540B2 Non-volatile memory device including a stacked structure and voltage application portion 有权
标题翻译：包括堆叠结构和电压施加部分的非易失性存储器件
公开(公告)号：US08410540B2
公开(公告)日：2013-04-02
申请号：US12886079
申请日：2010-09-20
申请人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
发明人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
IPC分类号： H01L29/792
CPC分类号： G11B9/1472 , B82Y10/00 , G11B5/746 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要翻译：根据一个实施例，非易失性存储器件包括堆叠结构，其包括存储器部分和具有面向存储器部分的表面的电极; 以及电压施加部分，用于向存储器部分施加电压以改变电阻。表面包括第一和第二区域。第一区域包含第一非金属元素和金属元素Si，Ga和As的至少一种元素。第二区域包含第二非金属元素和至少一个元素。第二区域的第二非金属元素的含量比率高于第一区域。第二非金属元素与至少一种元素之间的电负性的差异大于第一非金属元素与至少一种元素之间的电负性。第一和第二区域中的至少一个具有各向异性形状。

6. 发明授权

US08337954B2 Thermally reversible cross-linked poly (aryl ether ketone) media and method for high density data storage 失效
标题翻译：热可逆交联聚（芳醚酮）介质和高密度数据存储方法
公开(公告)号：US08337954B2
公开(公告)日：2012-12-25
申请号：US12058937
申请日：2008-03-31
申请人： Richard Anthony DiPietro , Urs T. Duerig , Jane Elizabeth Frommer , Bernd Walter Gotsmann , James Lupton Hedrick , Armin W. Knoll , Teddie Peregrino Magbitang , Robert Dennis Miller , Russell Clayton Pratt
发明人： Richard Anthony DiPietro , Urs T. Duerig , Jane Elizabeth Frommer , Bernd Walter Gotsmann , James Lupton Hedrick , Armin W. Knoll , Teddie Peregrino Magbitang , Robert Dennis Miller , Russell Clayton Pratt
IPC分类号： B05D3/02
CPC分类号： G11B9/149 , B82Y10/00 , G11B9/1472 , G11B11/007
摘要： A composition and a method. The method including: heating one or more poly(aryl ether ketone) copolymers to form a poly(aryl ether ketone) resin, said poly(aryl ether ketone) resin covalently cross-linked by cyclo-addition reactions of said phenylethynyl moieties; and wherein each of said one or more poly(aryl ether ketone) copolymers comprises (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a hydrogen bonding cross-linking moiety, said moiety capable of forming two or more hydrogen bonds at room temperature, each of said one or more poly(aryl ether ketone) copolymers having two terminal ends, each terminal end having a phenylethynyl moiety.
摘要翻译：组合物和方法。该方法包括：加热一种或多种聚（芳基醚酮）共聚物以形成聚（芳基醚酮）树脂，所述聚（芳基醚酮）树脂通过所述苯基乙炔基部分的环加成反应共价交联; 并且其中所述一种或多种聚（芳醚酮）共聚物中的每一种包含（a）包含芳基醚酮的第一单体和（b）包含芳基醚酮和氢键交联部分的第二单体，所述部分能够在室温下形成两个或多个氢键，所述一种或多种聚（芳基醚酮）共聚物中的每一个具有两个末端，每个末端具有苯基乙炔基部分。

7. 发明授权

US07848213B2 Data storage device 失效
标题翻译：数据存储设备
公开(公告)号：US07848213B2
公开(公告)日：2010-12-07
申请号：US12185530
申请日：2008-08-04
申请人： Peter Baechtold , Johannes G. Bednorz , Gerd K. Binnig , Giovanni Cherubini , Evangelos S. Eleftheriou , Michel Despont
发明人： Peter Baechtold , Johannes G. Bednorz , Gerd K. Binnig , Giovanni Cherubini , Evangelos S. Eleftheriou , Michel Despont
IPC分类号： G11B9/00
CPC分类号： G11B11/007 , B82Y10/00 , G11B9/1472
摘要： A storage device including a storage medium for storing data in the form of topographic or magnetic marks. At least one probe is mounted on a common frame, the common frame and the storage medium designed for moving relative to each other for creating or detecting said marks. Each probe includes a tip facing the storage medium, a read sensing element, a write element and a capacitive platform, that forms a first electrode and is designed for a voltage potential applied to it independent from a control signal for said read sensing element and for said voltage potential applied to said capacitive platform being independent from a control signal for said write heating element. It further comprises a second electrode arranged in a fixed position relative to the storage medium forming a first capacitor together wherein said first electrode and a medium between the first and second electrode.
摘要翻译：一种存储装置，包括用于以地形或磁标记的形式存储数据的存储介质。至少一个探针安装在公共框架上，公共框架和存储介质被设计用于相对于彼此移动以创建或检测所述标记。每个探针包括面向存储介质的尖端，读取感测元件，写入元件和电容平台，其形成第一电极，并被设计用于独立于用于所述读取感测元件的控制信号的施加于其的电压电位，并且为施加到所述电容平台的所述电压电位独立于用于所述写入加热元件的控制信号。它还包括布置在相对于存储介质固定位置的第二电极，形成第一电容器，其中所述第一电极和第一和第二电极之间的介质。

8. 发明授权

US07792011B2 Storage device and method for scanning a storage medium 有权
标题翻译：用于扫描存储介质的存储装置和方法
公开(公告)号：US07792011B2
公开(公告)日：2010-09-07
申请号：US12138607
申请日：2008-06-13
申请人： Thomas Albrecht , Gerd K. Binnig , Evangelos S. Eleftheriou , Charalampos Pozidis , Sri M. Sri-Jayantha , Peter Vettiger
发明人： Thomas Albrecht , Gerd K. Binnig , Evangelos S. Eleftheriou , Charalampos Pozidis , Sri M. Sri-Jayantha , Peter Vettiger
IPC分类号： G11B7/00
CPC分类号： G11B27/102 , B82Y10/00 , G11B9/14 , G11B9/1418 , G11B9/1454 , G11B9/1472 , G11B2005/0021
摘要： A storage device and a method for scanning a storage medium. A storage medium for storing data in the form of marks is scanned by an array of probes for mark detecting purposes in a scanning mode. The storage medium has fields with each field to be scanned by an associated one of the probes. At least one of the fields has marks representing operational data for operating the scanning mode. Scanning parameters are computed from the operational data and the scanning mode is adjusted according to the computed parameters.
摘要翻译：存储装置和扫描存储介质的方法。用于以标记形式存储数据的存储介质通过用于扫描模式的用于标记检测目的的探针阵列扫描。存储介质具有场，其中每个场被相关联的一个探针扫描。至少一个字段具有表示用于操作扫描模式的操作数据的标记。根据运算数据计算扫描参数，根据计算参数调整扫描模式。

9. 发明授权

US07738351B2 Signal processing circuit and reproducing apparatus 失效
标题翻译：信号处理电路和再现装置
公开(公告)号：US07738351B2
公开(公告)日：2010-06-15
申请号：US11887375
申请日：2006-03-31
申请人： Takanori Maeda
发明人： Takanori Maeda
IPC分类号： G11B9/00 , G01R31/02
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/1472
摘要： A signal processing circuit is provided with a signal input layer having a plurality of signal input sections which receive signal input; a plurality of signal processing layers whereupon a plurality of signal processing sections, which are arranged corresponding to each of the signal input sections and processes in parallel signals from the signal input sections, are dispersed; and connecting lines for associating and connecting the signal input sections with the signal processing sections, respectively. The size of a region occupied by each of the signal processing sections on the signal processing layers is larger than the arrangement intervals between the signal input sections on the signal input layers.
摘要翻译：信号处理电路设置有具有接收信号输入的多个信号输入部分的信号输入层; 多个信号处理层，其中分散对应于每个信号输入部分并且处理来自信号输入部分的并行信号的多个信号处理部分; 以及用于将信号输入部分与信号处理部分相关联并连接的连接线。信号处理层上的每个信号处理部分占据的区域的大小大于信号输入层上的信号输入部分之间的排列间隔。

10. 发明授权

US07729231B2 Recording device with a porous heat barrier 失效
标题翻译：具有多孔隔热层的记录装置
公开(公告)号：US07729231B2
公开(公告)日：2010-06-01
申请号：US11597626
申请日：2005-05-24
申请人： Gilles Gaudin , Emmanuelle Algre , Jean-Pierre Nozieres , Ahmad Bsiesy
发明人： Gilles Gaudin , Emmanuelle Algre , Jean-Pierre Nozieres , Ahmad Bsiesy
IPC分类号： G11B7/00
CPC分类号： G11B9/1472 , B82Y10/00 , G11B5/743 , G11B5/82 , G11B5/855 , G11B9/061 , G11B9/062 , G11B9/063 , G11B9/065 , G11B2005/0021 , H01L2924/0002 , H01L2924/00
摘要： This invention relates to a recording medium comprising: a substrate (21) made of a material, provided with pads, a layer of recording material (23) deposited on top of the pads, thermal insulation zones (22a) in at least one part of the pads and/or substrate.
摘要翻译：本发明涉及一种记录介质，包括：由材料制成的基板（21），设置有焊盘，沉积在焊盘顶部的记录材料层（23），至少一部分中的绝热区（22a）垫和/或基底。

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