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1. 发明授权

US07355951B2 High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system 失效
标题翻译：利用电子发射和相变介质的高密度数据记录/再现方法，以及采用该方法的数据记录系统以及该系统的介质
公开(公告)号：US07355951B2
公开(公告)日：2008-04-08
申请号：US10252085
申请日：2002-09-23
申请人： In-kyeong Yoo , Won-bong Choi , Hyun-jung Shin
发明人： In-kyeong Yoo , Won-bong Choi , Hyun-jung Shin
IPC分类号： G11B9/00
CPC分类号： G11B9/10 , B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1463 , G11B11/115
摘要： A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.
摘要翻译：一种快速数据记录/再现方法，采用该记录系统的数据记录系统，用于该系统的介质和跟踪方法，其中记录/再现方法包括制备具有通过电子吸收产生相变的数据记录层的介质在与数据记录层隔开预定间隔的位置处使用电子发生源产生电子，在电子和回旋加速器的移动电子的路径上形成磁场，通过局部熔化和冷却来记录数据电子由数据记录层。在与电子碰撞期间，微尖端不接触数据记录层，因此不会对微尖端造成损伤。本发明允许电子束到达数据记录层的区域最小化，从而最大化数据记录密度。

2. 发明授权

US07239600B2 Storage device based on phase-change modulated luminescence 失效
标题翻译：基于相变调制发光的存储装置
公开(公告)号：US07239600B2
公开(公告)日：2007-07-03
申请号：US10699150
申请日：2003-10-30
申请人： Gary Gibson
发明人： Gary Gibson
IPC分类号： G11B9/00
CPC分类号： G11B9/10 , B82Y10/00 , G11B7/00454 , G11B7/2578 , G11B7/258 , G11B9/14 , G11B9/1463 , G11B11/08 , G11B2005/0021 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25713 , G11B2007/25715 , G11B2007/25716
摘要： A media storage device is provided. The device comprises different configurations of a luminescent layer comprising a luminescent material capable of emitting light while being bombarded by a beam from a beam transmitter, a detector for detecting the light emitted from the luminescent layer, and a phase-change layer located proximate the luminescent layer. The phase-change layer is able to transform from a first phase to a second phase. Light emitted from the luminescent layer and received by the detector materially differs when the phase-change layer transforms from the first phase to the second phase.
摘要翻译：提供了一种媒体存储设备。该装置包括发光层的不同构造，发光层包括能够发射光的发光材料，同时被来自光束发射器的光束轰击，用于检测从发光层发射的光的检测器以及位于发光层附近的相变层层。相变层能够从第一相变换到第二相。当相变层从第一相转变为第二相时，从发光层发射并被检测器接收的光在物质上不同。

3. 发明授权

US07115473B2 Method of fabrication of non-volatile memory 有权
标题翻译：非易失性存储器的制作方法
公开(公告)号：US07115473B2
公开(公告)日：2006-10-03
申请号：US11038034
申请日：2005-01-21
申请人： Hideyuki Tanaka , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Kiyoshi Morimoto
IPC分类号： H01L21/336
CPC分类号： G11C13/0004 , B82Y10/00 , G11B9/04 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1463 , G11B9/149 , G11C11/22 , H01L27/101 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16
摘要： A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.
摘要翻译：一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。其中记录层（12）形成在其上形成无机介电层的一侧。使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

4. 发明申请

US20060062126A1 System and method for storing data 失效
公开(公告)号：US20060062126A1
公开(公告)日：2006-03-23
申请号：US11267073
申请日：2005-11-03
申请人： Gary Gibson
发明人： Gary Gibson
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B9/08 , G11B9/10 , G11B9/14 , G11B9/1463 , G11B11/08 , G11B2005/0021
摘要： A data storage unit is disclosed. The data storage unit can comprise a data storage layer having a plurality of data storage areas. Each data storage area can be configured to carry at least one bit of data. An electron beam emitter can be configured to selectively direct a beam of electrons toward the data storage layer to enable one or more of the data storage areas to be read. The data storage layer can further be configured to filter the beam of electrons directed toward the data storage layer according to a state of the data storage area. The data storage unit further comprises a layer adjacent to the data storage layer (LASL) in which carriers are generated in response to the number of electrons reaching the LASL. A detection region can be in carrier communication with the LASL and configured to measure carrier transport in the detection region to determine the state of the storage area.

5. 发明申请

US20060030068A1 Fabrication method for phase change diode memory cells 失效
公开(公告)号：US20060030068A1
公开(公告)日：2006-02-09
申请号：US11253233
申请日：2005-10-17
申请人： Gary Ashton , Gary Gibson , Robert Bicknell-Tassius
发明人： Gary Ashton , Gary Gibson , Robert Bicknell-Tassius
IPC分类号： H01L21/06
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1463 , G11B9/149 , G11B11/002 , G11B11/08
摘要： A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

6. 发明授权

US06942914B2 Dielectric recording medium, and method of and apparatus for producing the same 失效
标题翻译：介电记录介质及其制造方法和装置
公开(公告)号：US06942914B2
公开(公告)日：2005-09-13
申请号：US10354102
申请日：2003-01-30
申请人： Atsushi Onoe , Yasuo Cho
发明人： Atsushi Onoe , Yasuo Cho
IPC分类号： G01Q60/46 , G01Q60/50 , G01Q80/00 , G11B9/00 , G11B9/02 , B32B3/02
CPC分类号： G11B9/1463 , G11B9/02 , G11B9/1472 , Y10T428/219 , Y10T428/231 , Y10T428/24777
摘要： The dielectric material is, for example, a ferroelectric single crystal having a uniform thickness, and its one surface is used for a recording and reproducing surface on which a probe for recording and reproducing works. LiTaO3 is used as the dielectric material. The conductive thin film, which is, for example, about 1000 to 2000 Å thick, is placed on a surrounding portion of a recording and reproducing surface, a back surface, and a side surface of the dielectric material. This conductive thin film, to which aluminum is added by a method of deposition, is connected to a common electrode of a recording and reproducing apparatus. The substrate is intended to preserve the dielectric material, which is thin, and it uses silicon or the like in a predetermined thickness, for example. A conductive paste is a material for sticking to the substrate the dielectric material having the conductive thin film thereon, and indium and silver paste are used for it.
摘要翻译：介电材料例如是具有均匀厚度的铁电单晶，其一个表面用于记录和再现工作用的记录和再现表面。 LiTaO 3 3用作电介质材料。导电薄膜例如为约1000〜2000，被放置在电介质材料的记录再现表面，背表面和侧表面的周围部分上。通过沉积方法将铝加入的导电薄膜连接到记录和再现装置的公共电极。该衬底用于保持薄的电介质材料，例如使用预定厚度的硅等。导电膏是用于将其上具有导电薄膜的电介质材料粘贴到基底上的材料，并且使用铟和银膏。

7. 发明授权

US06819588B2 Memory element, method for structuring a surface, and storage device 失效
标题翻译：存储元件，构造表面的方法和存储设备
公开(公告)号：US06819588B2
公开(公告)日：2004-11-16
申请号：US10299480
申请日：2002-11-19
申请人： Bettina Baumeister , Thomas A. Jung , Ernst Meyer , Christoph Walter , Laura Heyderman
发明人： Bettina Baumeister , Thomas A. Jung , Ernst Meyer , Christoph Walter , Laura Heyderman
IPC分类号： G11C1136
CPC分类号： G11B9/14 , B82Y10/00 , G11B5/00 , G11B5/74 , G11B9/1409 , G11B9/1463 , G11B9/1472 , G11B9/149 , G11B11/03 , G11B13/02 , G11C17/14 , G11C23/00 , Y10S977/947
摘要： The invention is essentially characterized in that in a first step a substrate is provided, which is coated with defined pattern of protrusions of a coating layer of a different material, so that an interface is defined between the substrate and the coating layer. As an example, the patterned coating layer can be applied by first forming an essentially homogeneous coating layer, which is then partially removed by means of photolithographic and etching techniques, leaving nanometer sized protrusions in that layer. As a next step, the surface provided with these structures is modified by selectively removing protrusions by means of a micro-device. Such a micro-device can be formed in a similar way to a scanning probe microscope (SPM) tip. The presence or absence of a protrusion represents a readable data bit information.
摘要翻译：本发明的基本特征在于，在第一步骤中，提供了衬底，其涂覆有不同材料的涂层的突出物的限定图案，使得在衬底和涂层之间界定界面。作为示例，可以通过首先形成基本均匀的涂层来施加图案化涂层，然后通过光刻和蚀刻技术将其部分地去除，在该层中留下纳米尺寸的突起。作为下一步骤，具有这些结构的表面通过借助于微型装置选择性地去除突起而被修改。这样的微器件可以以与扫描探针显微镜（SPM）尖端类似的方式形成。突起的存在或不存在表示可读数据位信息。

8. 发明申请

US20040085861A1 Assembly and method for recording high density data in phase-change media and phase-change media structures adapted for recording high density data 有权
标题翻译：用于记录适合于记录高密度数据的相变介质和相变介质结构中的高密度数据的装配和方法
公开(公告)号：US20040085861A1
公开(公告)日：2004-05-06
申请号：US10284259
申请日：2002-10-31
申请人： International Business Machines Corporation
发明人： Hendrik F. Hamann , Yves C. Martin , Hemantha K. Wickramasinghe
IPC分类号： G11B011/00
CPC分类号： G11B9/14 , B82Y10/00 , G11B7/1387 , G11B7/24 , G11B9/1409 , G11B9/1463 , G11B9/149
摘要： An assembly and method for recording and/or reading high-density data includes a phase change media, an antenna placed adjacent the phase change media, and a source of electromagnetic radiation.
摘要翻译：用于记录和/或读取高密度数据的组件和方法包括相变介质，放置在相变介质附近的天线和电磁辐射源。

9. 发明申请

US20030206512A1 Atomic resolution storage device 有权
标题翻译：原子分辨率存储设备
公开(公告)号：US20030206512A1
公开(公告)日：2003-11-06
申请号：US10137784
申请日：2002-05-02
发明人： Gary R. Ashton
IPC分类号： G11B009/10
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1463 , G11B11/007
摘要： A storage device and a storage system employing the storage device. In one embodiment, the storage devices include an electron emitter and a storage medium in close proximity to the electron emitter. The storage medium includes a phase change material. A read signal detector capable of detecting light is provided in communication with the storage medium.
摘要翻译：存储装置和采用存储装置的存储系统。在一个实施例中，存储装置包括电子发射器和靠近电子发射器的存储介质。存储介质包括相变材料。提供与存储介质通信的能够检测光的读信号检测器。

10. 发明授权

US06449240B1 System, method and information medium for storing and reading information as a difference in a surface potential or a surface charge density 失效
标题翻译：用于存储和读取作为表面电位或表面电荷密度差的信息的系统，方法和信息介质
公开(公告)号：US06449240B1
公开(公告)日：2002-09-10
申请号：US09536619
申请日：2000-03-28
申请人： Takashi Kikukawa , Hajime Utsunomiya , Takuya Tsukagoshi
发明人： Takashi Kikukawa , Hajime Utsunomiya , Takuya Tsukagoshi
IPC分类号： G11B724
CPC分类号： B82Y10/00 , G11B9/08 , G11B9/14 , G11B9/1409 , G11B9/1463 , G11B9/149 , G11B11/08 , Y10S977/947 , Y10T428/21
摘要： An information medium capable of recording the information at a high density in a convenient manner is provided. Also provided is a method capable of readily reproducing the information recorded at such high density, and a system which can be used therefor. In the present invention, the information is read by reading difference in crystallographic state, crystallographic phase or constituent material as a difference in surface potential or surface charge density.
摘要翻译：提供能够以便利的方式以高密度记录信息的信息介质。还提供了能够容易地再现以这种高密度记录的信息的方法，以及可以使用的方法。在本发明中，作为表面电位或表面电荷密度的差异，通过读取晶体状态，结晶相或构成材料的差异来读取信息。

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