会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • SCAN FLIP-FLOP CIRCUITS AND SCAN TEST CIRCUITS INCLUDING THE SAME
    • 扫描FLOP-FLOP电路和扫描测试电路,包括它们
    • US20130241594A1
    • 2013-09-19
    • US13890517
    • 2013-05-09
    • Hoi-Jin LEEBai-Sun KONG
    • Hoi-Jin LEEBai-Sun KONG
    • H03K19/003
    • H03K19/003H03K3/356182
    • A scan flip-flop circuit includes an input unit and an output unit. The data output unit is configured to provide a data output terminal with a data output signal in response to a data input signal and a first control signal in a first operation mode, and the data output unit is configured to prohibit the data output terminal from being provided with a power supply voltage and a ground voltage applied to the scan flip-flop circuit in response to the data input signal and the first control signal in a second operation mode. The scan output unit is configured to provide a scan output terminal with a scan output signal in response to a scan input signal and a second control signal in the second operation mode.
    • 扫描触发器电路包括输入单元和输出单元。 数据输出单元被配置为在第一操作模式中响应于数据输入信号和第一控制信号向数据输出端提供数据输出信号,并且数据输出单元被配置为禁止数据输出端 在第二操作模式中响应于数据输入信号和第一控制信号,提供施加到扫描触发器电路的电源电压和接地电压。 扫描输出单元被配置为在第二操作模式中响应于扫描输入信号和第二控制信号向扫描输出端提供扫描输出信号。
    • 5. 发明申请
    • Charge pump circuit
    • 电荷泵电路
    • US20090134937A1
    • 2009-05-28
    • US12287620
    • 2008-10-10
    • Joung-Yeal KimYoung-Hyun JunBai-Sun Kong
    • Joung-Yeal KimYoung-Hyun JunBai-Sun Kong
    • G05F1/10
    • G11C5/145
    • A charge pump circuit includes initialization units, each of which initializes a boost node to an initialization voltage. Boosting units each boost the boost node to a higher voltage than the initialization voltage in response to an input voltage. First and second pump circuits each include a transfer unit for transferring a voltage of the boost node to an output node and sharing the output node. The transfer unit of the first pump circuit includes two transfer transistors that are switched in response to a voltage of a control node of the first pump circuit and the voltage of the boost node of the second pump circuit. The transfer unit of the second pump circuit includes two transfer transistors that are switched in response to a voltage of a control node of the second pump circuit and the voltage of the boost node of the first pump circuit.
    • 电荷泵电路包括初始化单元,每个初始化单元将升压节点初始化为初始化电压。 升压单元各自将升压节点升压到比初始化电压高的电压以响应于输入电压。 第一和第二泵电路各自包括用于将升压节点的电压传送到输出节点并共享输出节点的传送单元。 第一泵电路的传送单元包括响应于第一泵电路的控制节点的电压和第二泵电路的升压节点的电压而被切换的两个传输晶体管。 第二泵电路的传送单元包括响应于第二泵电路的控制节点的电压和第一泵电路的升压节点的电压而被切换的两个传输晶体管。
    • 6. 发明申请
    • Semiconductor devices and methods of fabricating the same
    • 半导体器件及其制造方法
    • US20080023761A1
    • 2008-01-31
    • US11819606
    • 2007-06-28
    • Mu-Kyeng JungXiao Quan WangBai-Sun Kong
    • Mu-Kyeng JungXiao Quan WangBai-Sun Kong
    • H01L29/78H01L21/336
    • H01L29/7835H01L21/26586H01L29/1045H01L29/66659
    • Semiconductor devices and methods of fabricating the same are provided. According to an example embodiment, a semiconductor device may include an active region disposed in a substrate and having first conductivity type impurity ions, a gate electrode crossing on the active region, a source region disposed within the active region at one a first side of the gate electrode, a drain region disposed within the active region at the a second side of the gate electrode, a source lightly doped drain (LDD) region disposed within the active region, extending toward the gate electrode from the source region, and having second conductivity type impurity ions, a drain LDD region disposed within the active region, extending toward the gate electrode from the drain region, and having the second conductivity type impurity ions in a concentration higher than the source LDD region, and a first halo region disposed within the active region, surrounding the source LDD region, and having the first conductivity type impurity ions.
    • 提供半导体器件及其制造方法。 根据示例性实施例,半导体器件可以包括设置在衬底中并具有第一导电类型杂质离子的有源区,在有源区上交叉的栅电极,设置在有源区的第一侧的源极区 栅电极,设置在所述栅电极的第二侧的有源区内的漏极区,设置在所述有源区内的源极轻掺杂漏极(LDD)区,从所述源极区朝向所述栅电极延伸,并具有第二导电性 设置在有源区内的漏极LDD区域,从漏区延伸到栅电极,并且具有浓度高于源极LDD区域的第二导电型杂质离子,以及设置在该源极LDD区域内的第一晕圈区域 有源区,围绕源LDD区,并具有第一导电类型的杂质离子。
    • 7. 发明授权
    • Asynchronous sensing differential logic (ASDL) circuit
    • 异步感应差分逻辑(ASDL)电路
    • US06211704B1
    • 2001-04-03
    • US09371836
    • 1999-08-11
    • Bai-Sun Kong
    • Bai-Sun Kong
    • A03K19096
    • G06F7/505G06F7/501G06F7/503G06F7/507G06F2207/3872G06F2207/3884G11C11/412H03K3/356147H03K19/0019H03K19/0963H03K19/1738H03K19/215
    • An asynchronous sensing differential logic circuit using a charge-recycling technique includes a control block carrying out a logical operation on a request signal from a preceding stage and a request signal for a succeeding stage, and outputting a first or second input enable signal and a first or second clock signal, a functional block carrying out an operation on an input data according to the first or second input enable signals and the first or second clock signals from the control block, and outputting a first or second output enable signal and an output data, and a latch block triggered by an acknowledge signal from the succeeding stage, and outputting a request signal for the succeeding stage and a final output data by carrying out an operation on the first or second output enable signals and the output data from the functional block.
    • 使用电荷再循环技术的异步感测差分逻辑电路包括对来自前级的请求信号执行逻辑运算的控制块和后级的请求信号,以及输出第一或第二输入使能信号和第一 或第二时钟信号,根据第一或第二输入使能信号和来自控制块的第一或第二时钟信号对输入数据执行操作的功能块,并输出第一或第二输出使能信号和输出数据 以及由来自后级的确认信号触发的锁存块,并且通过对来自功能块的第一或第二输出使能信号和输出数据执行操作来输出后级的请求信号和最终输出数据 。
    • 9. 发明申请
    • Semiconductor device for charge pumping
    • 用于电荷泵浦的半导体器件
    • US20100026373A1
    • 2010-02-04
    • US12458533
    • 2009-07-15
    • Joung-Yeal KimYoung-hyun JunBai-sun Kong
    • Joung-Yeal KimYoung-hyun JunBai-sun Kong
    • G05F1/10
    • H02M3/07
    • Provided is a semiconductor device for performing charge pumping. The semiconductor device may include a first pumping unit, a second pumping unit, and a controller. The first pumping unit may be configured to output a boosted voltage via an output node by using a first input signal and the initial voltage, where the boosted voltage is greater than an initial voltage. The second pumping unit may be configured to output the boosted voltage via the output node by using a second input signal and the initial voltage. The controller may be configured to control the first and second pumping units. Each of the first and second pumping units may include an initialization unit, a boosting unit, and a transmission unit. The initialization unit may be configured to control a voltage of a boosting node to be equal to the initial voltage during an initialization operation. The boosting unit may be configured to boost the voltage of the boosting node based on the first and second input signals. Also, the transmission unit may be configured to control output of the boosted voltage.
    • 提供一种用于进行电荷泵送的半导体器件。 半导体器件可以包括第一泵送单元,第二泵送单元和控制器。 第一泵单元可以被配置为通过使用第一输入信号和初始电压经由输出节点输出升压电压,其中升压电压大于初始电压。 第二泵送单元可以被配置为通过使用第二输入信号和初始电压经由输出节点输出升压电压。 控制器可以被配置为控制第一和第二泵送单元。 第一和第二泵送单元中的每一个可以包括初始化单元,升压单元和传输单元。 初始化单元可以被配置为在初始化操作期间将升压节点的电压控制为等于初始电压。 升压单元可以被配置为基于第一和第二输入信号来升压升压节点的电压。 此外,传输单元可以被配置为控制升压电压的输出。