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    • 3. 发明授权
    • Charge recycling differential logic (CRDL) circuit having true
single-phase clocking scheme
    • 充电回收差分逻辑(CRDL)电路具有真正的单相时钟方案
    • US6028453A
    • 2000-02-22
    • US950973
    • 1997-10-15
    • Bai-Sun Kong
    • Bai-Sun Kong
    • H03K19/20G06F1/28G06F7/50G06F7/507G11C11/412H03K19/00H03K19/096H03K19/173H03K19/21H03K19/094
    • G06F7/507G06F7/501G06F7/503G06F7/505G11C11/412H03K19/0019H03K19/0963H03K19/1738H03K19/215G06F2207/3872G06F2207/3884
    • A novel logic family, called Charge Recycling Differential Logic (CRDL) circuit, reduces power consumption by utilizing a charge recycling technique and has a speed comparable to those of conventional dynamic logic circuits. The CRDL circuit also has improved noise margin due to inherently static operation. An 8-bit Manchester carry chain and full adders were fabricated using a 0.8 .mu.m single-poly double-metal n-well CMOS technology. The measurement results indicate about 16-48% improvements in power-delay product are obtained compared with Differential Cascode Voltage Switch (DCVS) circuit. Further, a circuit operating under a true single-phase clock signal includes a plurality of pipelined stages having a plurality of function blocks to implement a prescribed function. The function blocks are implemented using the novel CRDL circuit. An adder based on the CRDL circuit provided improved performance and reduced power consumption compared to an adder based on the DCVS circuit.
    • 称为电荷回收差分逻辑(CRDL)电路的新型逻辑系列通过利用电荷回收技术降低功耗,并且具有与常规动态逻辑电路相当的速度。 由于固有的静态操作,CRDL电路还具有改善的噪声容限。 使用0.8μm单多晶双金属n阱CMOS技术制造了8位曼彻斯特携带链和全加法器。 测量结果表明,与差分串联电压开关(DCVS)电路相比,获得了功率延迟产品的16-48%的改进。 此外,在真正的单相时钟信号下工作的电路包括具有多个功能块的多个流水线级,以实现规定的功能。 功能块使用新颖的CRDL电路实现。 与基于DCVS电路的加法器相比,基于CRDL电路的加法器提供了改进的性能和降低的功耗。
    • 6. 发明授权
    • Self-timed latch circuit for high-speed very large scale integration
(VLSI)
    • 用于高速非常大规模集成(VLSI)的自定时锁存电路
    • US6163193A
    • 2000-12-19
    • US217201
    • 1998-12-22
    • Bai-Sun Kong
    • Bai-Sun Kong
    • H03K3/012H03K3/356H03K3/037
    • H03K3/356113H03K3/012H03K3/356182
    • A self-timed latch circuit according to the present invention includes a first inverter for inverting a set signal, a second inverter for inverting a reset signal, a first main driver driven by an output signal from the second inverter and the set signal, a second main driver driven by an output signal from the first inverter and the reset signal and a static latch cross-coupled with first and second output terminals of the first and second main drivers. The self-timed latch circuit according to the present invention reduces the power consumption and increases the operation speed of the circuit by removing a back-to-back connection and a serial connection of transistors applied to the conventional art. Further, since the static latch consists of cross-coupled inverters, the self-timed latch circuit according to the present invention prevents signal fighting during the logic transition of output signals and also reduces a leakage current generated during the operation of the circuit.
    • 根据本发明的自定时锁存电路包括用于反转设置信号的第一反相器,用于反转复位信号的第二反相器,由来自第二反相器的输出信号驱动的第一主驱动器和设定信号,第二反相器 由第一反相器的输出信号和复位信号驱动的主驱动器和与第一和第二主驱动器的第一和第二输出端交叉耦合的静态锁存器。 根据本发明的自定时锁存电路通过去除应用于传统技术的晶体管的背靠背连接和串联连接来降低功耗并增加电路的操作速度。 此外,由于静态锁存器由交叉耦合的反相器组成,所以根据本发明的自定时锁存电路防止在输出信号的逻辑转换期间的信号消除,并且还减少在电路操作期间产生的漏电流。
    • 7. 发明授权
    • Charge recycling differential logic (CRDL) circuit and storage elements
and devices using the same
    • 电荷回收差分逻辑(CRDL)电路和存储元件及使用其的器件
    • US5903169A
    • 1999-05-11
    • US775951
    • 1997-01-03
    • Bai-Sun Kong
    • Bai-Sun Kong
    • G11C11/41G11C7/00G11C11/412H03K3/356H03K19/00H03K19/0944H03K19/096H03K19/173H03K19/21
    • G11C11/412H03K19/0019H03K19/0963H03K19/1738H03K19/215H03K3/356147G06F2207/3884
    • A storage element for a semiconductor device in accordance with preferred embodiments exhibit less noise and consumes less power with faster speed. A first circuit maintains a first storage node at a same signal level of a previous state when an input signal at an input electrode transits from one of (i) first signal level to second signal level and (ii) third signal level to second signal level. The first circuit includes a first plurality of transistors coupled to the input electrode, and a first pair of transistors coupled to said first plurality of transistors and coupled to each other at the first storage node. A second circuit, coupled to said first circuit, changes a condition of said first storage node to one of (i) first signal level when the input signal transits from the second signal level to the first signal level and (ii) third signal level when the input signal transits from the second signal level to the third signal level.
    • 根据优选实施例的用于半导体器件的存储元件表现出较小的噪声并且以更快的速度消耗更少的功率。 当输入电极的输入信号从(i)第一信号电平之一转换到第二信号电平时,第一电路将先前状态的第一存储节点维持在相同的信号电平,以及(ii)第三信号电平转换到第二信号电平 。 第一电路包括耦合到输入电极的第一多个晶体管,以及耦合到所述第一多个晶体管并在第一存储节点处彼此耦合的第一对晶体管。 当所述输入信号从所述第二信号电平转换到所述第一信号电平时,耦合到所述第一电路的第二电路将所述第一存储节点的状态改变为(i)第一信号电平之一,以及(ii)第三信号电平, 输入信号从第二信号电平转换到第三信号电平。
    • 8. 发明申请
    • Scan Flip-Flop Circuits And Scan Test Circuits Including The Same
    • 扫描触发电路和包括其的扫描测试电路
    • US20110304353A1
    • 2011-12-15
    • US13154731
    • 2011-06-07
    • Hoi-Jin LeeBai-Sun Kong
    • Hoi-Jin LeeBai-Sun Kong
    • H03K19/003
    • H03K19/003H03K3/356182
    • A scan flip-flop circuit includes an input unit and an output unit. The input unit selects one of a data input signal and a scan input signal depending on an operation mode and generates an intermediate signal based on the selected signal. The output unit generates an output signal based on the intermediate signal and selects one of a data output terminal and a scan output terminal depending on the operation mode to provide the output signal through the selected output terminal. A voltage level at the selected output terminal bidirectionally transitions between a first voltage level and a second voltage level. A voltage level at a non-selected output terminal unidirectionally transitions between the first voltage level and the second voltage level.
    • 扫描触发器电路包括输入单元和输出单元。 输入单元根据操作模式选择数据输入信号和扫描输入信号之一,并基于所选择的信号产生中间信号。 输出单元基于中间信号产生输出信号,并根据操作模式选择数据输出端和扫描输出端之一,以通过所选择的输出端提供输出信号。 所选择的输出端子处的电压电平在第一电压电平和第二电压电平之间双向转换。 未选择的输出端子处的电压电平在第一电压电平和第二电压电平之间单向转变。
    • 9. 发明授权
    • Charge pump circuit
    • 电荷泵电路
    • US07724073B2
    • 2010-05-25
    • US12287620
    • 2008-10-10
    • Joung-Yeal KimYoung-Hyun JunBai-Sun Kong
    • Joung-Yeal KimYoung-Hyun JunBai-Sun Kong
    • G05F3/02
    • G11C5/145
    • A charge pump circuit includes initialization units, each of which initializes a boost node to an initialization voltage. Boosting units each boost the boost node to a higher voltage than the initialization voltage in response to an input voltage. First and second pump circuits each include a transfer unit for transferring a voltage of the boost node to an output node and sharing the output node. The transfer unit of the first pump circuit includes two transfer transistors that are switched in response to a voltage of a control node of the first pump circuit and the voltage of the boost node of the second pump circuit. The transfer unit of the second pump circuit includes two transfer transistors that are switched in response to a voltage of a control node of the second pump circuit and the voltage of the boost node of the first pump circuit.
    • 电荷泵电路包括初始化单元,每个初始化单元将升压节点初始化为初始化电压。 升压单元各自将升压节点升压到比初始化电压高的电压以响应于输入电压。 第一和第二泵电路各自包括用于将升压节点的电压传送到输出节点并共享输出节点的传送单元。 第一泵电路的传送单元包括响应于第一泵电路的控制节点的电压和第二泵电路的升压节点的电压而被切换的两个传输晶体管。 第二泵电路的传送单元包括响应于第二泵电路的控制节点的电压和第一泵电路的升压节点的电压而被切换的两个传输晶体管。