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71. 发明授权

US5180653A Electron beam-curable resist composition and method for fine patterning using the same 失效
标题翻译：电子束固化型抗蚀剂组合物及使用其的精细图案化方法
公开(公告)号：US5180653A
公开(公告)日：1993-01-19
申请号：US693664
申请日：1991-04-30
申请人： Masanori Miyabe , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masanori Miyabe , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08K5/3492 , C08L61/06
CPC分类号： C08K5/3492 , C08L61/06 , Y10S430/143
摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.
摘要翻译：提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层，线图案的正交横截面轮廓。组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。

72. 发明授权

US5057397A Electron beam-curable resist composition and method for fine patterning using the same 失效
标题翻译：电子束可固化电阻组合物和使用其的精细图案的方法
公开(公告)号：US5057397A
公开(公告)日：1991-10-15
申请号：US438334
申请日：1989-11-16
申请人： Masanori Miyabe , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masanori Miyabe , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/038 , C08F2/46 , C08K5/3492 , C08L61/06 , C08L61/08 , G03F7/004 , H01L21/027
CPC分类号： C08K5/3492 , C08L61/06 , Y10S430/121 , Y10S430/128 , Y10S430/143
摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.
摘要翻译：提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层，线图案的正交横截面轮廓。组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。

73. 发明授权

US4997748A Developer solution for positive-working resist composition 失效
标题翻译：正性抗蚀剂组合物的显影剂溶液
公开(公告)号：US4997748A
公开(公告)日：1991-03-05
申请号：US394586
申请日：1989-08-16
申请人： Yasuyuki Takeda , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Yasuyuki Takeda , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The developer solution of the invention is suitable for use to develop a positive-working resist composition comprising an alkali-soluble novolac resin and a naphthoquinone diazide compound and capable of giving a patterned image of the resist layer with a high contrast and increasing the effective depth of focus. The characteristic ingredient in the inventive developer solution is an alkali-soluble organic cyclic nitrogen compound such as N-hydroxyethyl piperazine, N-methyl-4-piperidone, 1,3-dimethyl-2-imidazolidinone and the like added in a specified concentration to a conventional developer solution containing tetramethyl ammonium hydroxide or choline as the water-soluble alkaline compound.
摘要翻译：本发明的显影剂溶液适用于开发包含碱溶性酚醛清漆树脂和萘醌二叠氮化合物的正性抗蚀剂组合物，能够以高对比度提供抗蚀剂层的图案化图像并增加有效深度的焦点。本发明的显影剂溶液中的特征成分是以特定浓度添加的碱溶性有机环状氮化合物，例如N-羟乙基哌嗪，N-甲基-4-哌啶酮，1,3-二甲基-2-咪唑啉酮等，包含四甲基氢氧化铵或胆碱作为水溶性碱性化合物的常规显影剂溶液。

74. 发明授权

US4804612A Highly heat-resistant positive-working o-quinone diazide containing photoresist composition with novolac resin made from phenol with ethylenic unsaturation 失效
标题翻译：含酚酚醛树脂制成的具有烯键式不饱和度的高耐热正性邻醌醌二叠氮化物
公开(公告)号：US4804612A
公开(公告)日：1989-02-14
申请号：US62954
申请日：1987-06-16
申请人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： G03C1/72 , C08G8/08 , G03C1/10 , G03F7/023 , G03F7/22 , H01L21/027 , G03C1/60 , G03C1/495
CPC分类号： C08G8/08 , G03F7/0236
摘要： Although the positive-working photoresist composition comprises a phenolic novolac resin as the film-forming component and a known photosensitizing compound as in conventional compositions, the novolac resin is prepared from a specific mixture of two classes of phenolic compounds including, one, phenol, cresols and/or resorcinol and, the other, one or more of the phenolic compounds having a nucleus-substituting group selected from allyloxy, allyloxymethyl, allyl dimethyl silyl, 2-(allyl dimethyl silyl) ethoxy, cinnamoyl, acryloyl and methacryloyl groups. By virtue of this unique combination to give the phenolic moiety in the novolac resin, the photoresist composition has markedly improved heat resistance as well as stability against plasma in dry etching so that the composition can give a patterned photoresist layer with extreme fineness having high fidelity to the mask pattern.
摘要翻译：尽管正性光致抗蚀剂组合物包含作为成膜组分的酚醛酚醛树脂和常规组合物中已知的光敏化合物，但酚醛清漆树脂由两类酚类化合物的特定混合物制备，包括一种酚类，甲酚和/或间苯二酚，另一种，一种或多种具有选自烯丙氧基，烯丙氧基甲基，烯丙基二甲基甲硅烷基，2-（烯丙基二甲基甲硅烷基）乙氧基，肉桂酰基，丙烯酰基和甲基丙烯酰基的取代基的酚类化合物。由于这种独特的组合使得酚醛部分在酚醛清漆树脂中，光致抗蚀剂组合物在干蚀刻中具有显着改善的耐热性以及抗等离子体的稳定性，使得组合物可以给出具有高保真度的极细度的图案化光致抗蚀剂层掩模图案。

75. 发明授权

US4731319A Positive-working naphthoquinone diazide photoresist composition with two cresol novolac resins 失效
标题翻译：具有两种甲酚酚醛清漆树脂的正性萘醌二叠氮化合物光致抗蚀剂组合物
公开(公告)号：US4731319A
公开(公告)日：1988-03-15
申请号：US886839
申请日：1986-07-18
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama
IPC分类号： G03C1/72 , G03F7/022 , G03F7/023 , H01L21/027 , G03C1/54 , G03C1/60
CPC分类号： G03F7/0236
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.
摘要翻译：适用于制造半导体器件的精细图案化的正性光致抗蚀剂组合物，例如，提出了高保真的VLSI。该组合物包含甲酚酚醛清漆树脂和萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分特征是两种不同甲酚酚醛清漆树脂的组合，其重均分子量分别为大，一小的，并且用于制备酚醛清漆的甲酚和m-异构体的m-和p-异构体的重量比例，其中一个富含m-异构体和另一个富含p-异构体的重量比例，这样组合的甲酚酚醛清漆树脂中的甲酚和对甲酚部分也应在特定的范围内。

76. 发明授权

US06815151B2 Rinsing solution for lithography and method for processing substrate with the use of the same 有权
标题翻译：用于光刻的冲洗溶液和使用它的基板处理方法
公开(公告)号：US06815151B2
公开(公告)日：2004-11-09
申请号：US09877124
申请日：2001-06-11
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F742
CPC分类号： G03F7/42 , G03F7/425
摘要： The present invention provides a rinsing solution for lithography with which finely processed parts of a resist pattern can be well rinsed without corroding a metallic film made of Al, Al—Si, Al—Si—Cu, etc. and which is economically advantageous and has a high safety; and a method for processing a substrate with the use of the same. The rinsing solution contains at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and ethyl lactate.
摘要翻译：本发明提供了一种用于光刻的冲洗溶液，其中抗蚀剂图案的精细加工部分可以很好地冲洗而不腐蚀由Al，Al-Si，Al-Si-Cu等制成的金属膜，并且在经济上有利并具有安全性高以及使用该方法处理基板的方法。冲洗溶液含有选自乙二醇单甲醚，乙二醇单乙醚，丙二醇单甲醚，丙二醇单乙醚和乳酸乙酯中的至少一种。

77. 发明授权

US06300033B1 Positive photoresist composition and process for forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06300033B1
公开(公告)日：2001-10-09
申请号：US09318601
申请日：1999-05-26
申请人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/2002 , G03F7/022
摘要： In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.
摘要翻译：在包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物中，成分（B）含有（B-1）例如双[2,5-二甲基-3-（2 - 羟基-5-甲基苄基）-4-羟基苯基]甲烷或2,4-双[4-羟基-3-（4-羟基苄基）-5-甲基苄基] -6-环己基苯酚和（B-2）醌二叠氮化物例如没食子酸甲酯或2,2-双（2,3,4-三羟基苯基）丙烷。该组合物具有高灵敏度和清晰度，改善了焦深范围特性和曝光不足。

78. 发明授权

US06291142B1 Photoresist stripping liquid compositions and a method of stripping photoresists using the same 有权
标题翻译：光刻胶剥离液体组合物和使用其剥离光致抗蚀剂的方法
公开(公告)号：US06291142B1
公开(公告)日：2001-09-18
申请号：US09599729
申请日：2000-06-23
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03C1124
CPC分类号： G03F7/425
摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.
摘要翻译：本发明涉及光致抗蚀剂剥离液体组合物，其包含（a）2-30重量％的羟胺，（b）2-35重量％的水，（c）25-40重量％的至少一种选自单乙醇胺和二乙醇胺，（d）20-32重量％的二甲基亚砜和（e）2-20重量％的芳族羟基化合物，以及使用它们剥离光致抗蚀剂的方法。本发明提供了光刻胶剥离液体组合物，即使在更高的处理温度下，剥离光致抗蚀剂膜和改性膜的性能也是优异的，并且有效地防止了否则会发生在覆盖有Al或Al合金层的基材中的腐蚀，或者 Ti层，以及通过使用它们剥离光致抗蚀剂的方法。

79. 发明授权

US06214104B1 Coating solution for forming silica coating and method of forming silica coating 失效
标题翻译：用于形成二氧化硅涂层的涂层溶液和形成二氧化硅涂层的方法
公开(公告)号：US06214104B1
公开(公告)日：2001-04-10
申请号：US08692005
申请日：1996-08-02
申请人： Hiroyuki Iida , Hiroki Endo , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Hiroyuki Iida , Hiroki Endo , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： B05D712
CPC分类号： C09D4/00 , C08G77/04
摘要： A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.
摘要翻译：在第一旋转模式中以低速旋转涂布溶液滴落到其上的基板，然后在第二旋转模式中以高速度在一段时间之后旋转。在第一旋转模式结束时，将涂布溶液涂覆到基板上的不规则部分上的厚度大于给定厚度，例如双图案和全局图案，涂布溶液的涂布厚度小于给定厚度在双胞胎之间。随后，在第二旋转模式开始时，涂覆在双模式上的涂布溶液和全局图案流入这些图案之间的空间。在第二旋转模式结束时，两个图案上的涂布溶液的厚度几乎为零，并且全局图案上的涂布溶液的厚度整体上小，但是其中心区域全球格局。

80. 发明授权

US06207340B1 Positive photoresist composition and process for forming contact hole 有权
公开(公告)号：US06207340B1
公开(公告)日：2001-03-27
申请号：US09541020
申请日：2000-03-31
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7021
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

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