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1. 发明授权

US06177226B1 Positive photoresist composition and process for forming contact hole 失效
标题翻译：正光致抗蚀剂组合物和形成接触孔的方法
公开(公告)号：US06177226B1
公开(公告)日：2001-01-23
申请号：US09069074
申请日：1998-04-29
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译：一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：多酚化合物的至少一种萘醌二叠氮化物磺酸酯，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链位于其他亚甲基链的间位，并且提供每个苯环具有羟基。根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像方法。

2. 发明授权

US06296992B1 Positive photoresist composition and process for forming contact hole 有权
标题翻译：正光致抗蚀剂组合物和形成接触孔的方法
公开(公告)号：US06296992B1
公开(公告)日：2001-10-02
申请号：US09540539
申请日：2000-03-31
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F730
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译：一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：至少一种多酚化合物的萘醌二叠氮化物，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链位于其他亚甲基链的间位，并且提供每个苯环具有羟基。根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像方法。

3. 发明授权

US06207340B1 Positive photoresist composition and process for forming contact hole 有权
公开(公告)号：US06207340B1
公开(公告)日：2001-03-27
申请号：US09541020
申请日：2000-03-31
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7021
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

4. 发明授权

US6127087A Positive photoresist compositions and multilayer resist materials using same 失效
标题翻译：正光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US6127087A
公开(公告)日：2000-10-03
申请号：US98459
申请日：1998-06-17
申请人： Miki Kobayashi , Kousuke Doi , Sachiko Tamura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Miki Kobayashi , Kousuke Doi , Sachiko Tamura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprises (A) an alkali-soluble resin, and (B) at least one quinonediazide group-containing compound in which part or all of the hydroxyl groups of a compound represented by the following formula (I) are esterified with a quinonediazidesulfonic acid: ##STR1## wherein each of R.sup.1 and R.sup.2 is an alkyl group having 1 to 5 carbon atoms, and "a" is 0 or 1. The present invention provides a positive photoresist composition which can form a resist pattern having high film residual rate, improved development contrast between exposed portions and unexposed portions, and satisfactory definition, exposure margin, focal depth range properties and sectional shape.
摘要翻译：正型光致抗蚀剂组合物包含（A）碱溶性树脂和（B）至少一种含醌二叠氮化物基团的化合物，其中由下式（I）表示的化合物的部分或全部羟基被酯化醌二叠氮化物：其中R 1和R 2各自为具有1至5个碳原子的烷基，“a”为0或1.本发明提供一种正型光致抗蚀剂组合物，其可以形成具有高膜残留率的抗蚀剂图案，暴露部分和未曝光部分之间的对比度，以及令人满意的清晰度，曝光余量，焦点深度范围属性和截面形状。

5. 发明授权

US06440646B1 Positive resist composition suitable for lift-off technique and pattern forming method 有权
公开(公告)号：US06440646B1
公开(公告)日：2002-08-27
申请号：US09782189
申请日：2001-02-14
申请人： Takafumi Ueda , Hideto Kato , Toshihiko Fujii , Miki Kobayashi
发明人： Takafumi Ueda , Hideto Kato , Toshihiko Fujii , Miki Kobayashi
IPC分类号： G03F730
摘要： A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.

6. 发明授权

US08068165B2 Imaging apparatus 有权
标题翻译：成像设备
公开(公告)号：US08068165B2
公开(公告)日：2011-11-29
申请号：US12299711
申请日：2007-05-15
申请人： Miki Kobayashi
发明人： Miki Kobayashi
IPC分类号： G03B13/00 , G02B27/00
CPC分类号： G02B13/16 , G02B27/0927 , G02B27/0966 , H04N5/262 , H04N5/357
摘要： An imaging apparatus where images of good quality can be obtained without being affected by the diffraction phenomenon and without recourse to any polishing. The imaging apparatus is adapted to form a subject image on an imaging plane having light receptor elements arranged on it via an imaging optical system. The imaging optical system has a molded optical element fabricated through a fabrication process in which a periodic streak is produced on an optical surface. When a high-brightness subject light whose brightness value exceeds the saturation sensitivity of each light receptor element enters the imaging optical system, a nonessential light image resulting from the streak on the optical surface based on the high-brightness subject light is formed on the imaging plane and in an area of a subject image from the high-brightness subject light at the time when the optical plane is supposed to be free of the streak.
摘要翻译：可以获得质量好的图像而不受衍射现象的影响并且不需要任何抛光的成像装置。成像装置适于在成像平面上经由成像光学系统在其上布置有光接收元件的物体图像上形成。成像光学系统具有通过制造工艺制造的模制光学元件，其中在光学表面上产生周期性条纹。当亮度值超过每个光接收器元件的饱和灵敏度的高亮度被摄体光进入成像光学系统时，基于高亮度被摄体光从光学表面上的条纹产生的非必要光图像形成在成像并且在光学平面假定为没有条纹时，来自高亮度被摄体光的被摄体图像的区域。

7. 发明授权

US06210855B1 Positive resist composition suitable for lift-off technique and pattern forming method 有权
公开(公告)号：US06210855B1
公开(公告)日：2001-04-03
申请号：US09459876
申请日：1999-12-14
申请人： Takafumi Ueda , Hideto Kato , Toshihiko Fujii , Miki Kobayashi
发明人： Takafumi Ueda , Hideto Kato , Toshihiko Fujii , Miki Kobayashi
IPC分类号： G03F7023
CPC分类号： G03F7/0226 , G03F7/0233
摘要： A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.

8. 外观设计

USD558754S1 Personal computer 有权
标题翻译：个人电脑
公开(公告)号：USD558754S1
公开(公告)日：2008-01-01
申请号：US29266539
申请日：2006-09-22
申请人： Hirofumi Takemasa , Miki Kobayashi
设计人： Hirofumi Takemasa , Miki Kobayashi

9. 发明授权

US07196080B2 Phenylpyridinecarbonylpiperazinederivative 失效
标题翻译：苯基吡啶羰基哌嗪基化
公开(公告)号：US07196080B2
公开(公告)日：2007-03-27
申请号：US10480543
申请日：2002-06-13
申请人： Masahiro Iwata , Noriyuki Kawano , Hiroyuki Kaizawa , Tomofumi Takuwa , Issei Tsukamoto , Ryushi Seo , Kiyoshi Yahiro , Miki Kobayashi , Makoto Takeuchi
发明人： Masahiro Iwata , Noriyuki Kawano , Hiroyuki Kaizawa , Tomofumi Takuwa , Issei Tsukamoto , Ryushi Seo , Kiyoshi Yahiro , Miki Kobayashi , Makoto Takeuchi
IPC分类号： A61K31/496 , C07D401/06 , C07D401/14 , C07D413/14 , C07D213/79
CPC分类号： C07D213/79 , A61K31/439 , A61K31/4418 , A61K31/4427 , A61K31/443 , A61K31/4433 , A61K31/4436 , A61K31/4439 , A61K31/444 , A61K31/4545 , A61K31/4709 , A61K31/4725 , A61K31/496 , A61K31/506 , A61K31/5355 , A61K31/5377 , A61K31/55 , C07D213/81 , C07D213/89 , C07D401/12 , C07D405/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/08
摘要： The present invention relates to a compound which is represented by the following general formula and has type 4 phosphodiesterase inhibitory action, and uses and an intermediate compound thereof. (wherein R1, R2: hydrogen, a halogen, a lower alkyl, a lower alkoxy, or the like, R3, R4: hydrogen, a (substituted) lower alkyl, a halogen, or the like, R5: hydrogen, a lower alkyl, a lower alkoxycarbonyl, or the like, and n: 0 or 1).
摘要翻译：本发明涉及由以下通式表示的具有4型磷酸二酯酶抑制作用的化合物及其用途及其中间体化合物。

10. 发明申请

US20070167450A1 Agent for treating chronic pelvic pain syndrome 审中-公开
标题翻译：治疗慢性盆腔疼痛综合征的药物
公开(公告)号：US20070167450A1
公开(公告)日：2007-07-19
申请号：US10580417
申请日：2004-11-18
申请人： Miki Kobayashi , Satoshi Kubo
发明人： Miki Kobayashi , Satoshi Kubo
IPC分类号： A61K31/5377 , A61K31/4745
CPC分类号： C07D213/81 , A61K31/277 , A61K31/4375 , A61K31/4409 , A61K31/5377 , A61K2300/00
摘要： This invention relates to an agent for preventing or treating chronic pelvic pain syndromes (chronic abacterial prostatitis, chronic pelvic pain syndrome in a narrow sense and interstitial cystitis), which comprises various phosphodiesterase 4 (PDE 4) inhibitors such as cilomilast and roflumilast as an active ingredient.
摘要翻译：本发明涉及预防或治疗慢性盆腔疼痛综合征（慢性非细菌性前列腺炎，狭义和间质性膀胱炎的慢性盆腔疼痛综合征）的药剂，其包含各种磷酸二酯酶4（PDE 4）抑制剂，例如西洛司特和罗氟司特作为活性物质成分。

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