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    • 1. 发明授权
    • Coating solution for forming silica coating and method of forming silica coating
    • 用于形成二氧化硅涂层的涂层溶液和形成二氧化硅涂层的方法
    • US06214104B1
    • 2001-04-10
    • US08692005
    • 1996-08-02
    • Hiroyuki IidaHiroki EndoHideya KobariYoshio HagiwaraToshimasa Nakayama
    • Hiroyuki IidaHiroki EndoHideya KobariYoshio HagiwaraToshimasa Nakayama
    • B05D712
    • C09D4/00C08G77/04
    • A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.
    • 在第一旋转模式中以低速旋转涂布溶液滴落到其上的基板,然后在第二旋转模式中以高速度在一段时间之后旋转。 在第一旋转模式结束时,将涂布溶液涂覆到基板上的不规则部分上的厚度大于给定厚度,例如双图案和全局图案,涂布溶液的涂布厚度小于给定厚度 在双胞胎之间。 随后,在第二旋转模式开始时,涂覆在双模式上的涂布溶液和全局图案流入这些图案之间的空间。 在第二旋转模式结束时,两个图案上的涂布溶液的厚度几乎为零,并且全局图案上的涂布溶液的厚度整体上小,但是其中心区域 全球格局。
    • 3. 发明授权
    • Coating solution for silica-based coating film and method for the
preparation thereof
    • 二氧化硅系涂膜用涂布液及其制备方法
    • US5762697A
    • 1998-06-09
    • US749845
    • 1996-11-15
    • Yoshinori SakamotoYoshio HagiwaraToshimasa Nakayama
    • Yoshinori SakamotoYoshio HagiwaraToshimasa Nakayama
    • C08G77/06C08J3/09C09D183/04H01L21/316C09D183/06
    • C08J3/095C08G77/06C09D183/04C08J2383/04
    • Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.
    • 提出了用于在半导体器件的制造工艺中使用的基板表面上形成二氧化硅基涂膜的涂布溶液以及涂布溶液的方法,其表现出优异的储存稳定性而没有凝胶化,并且能够 形成即使当涂膜具有相对较大的厚度时也由于诸如裂纹形成等气体的析出而无法解决的二氧化硅系涂膜。 通过加入特定量的水,然后除去由三烷氧基硅烷的水解反应形成的醇,通过溶解在规定浓度的丙二醇二甲醚中的三烷氧基硅烷如三乙氧基硅烷等水解反应制备涂布溶液, 蒸馏到使涂布溶液中的醇的含量不超过10重量%,优选3重量%的程度。
    • 10. 发明授权
    • Composition for forming antireflective coating film and method for forming resist pattern using same
    • 用于形成抗反射涂膜的组合物和使用其形成抗蚀剂图案的方法
    • US06268108B1
    • 2001-07-31
    • US09116460
    • 1998-07-16
    • Etsuko IguchiMasakazu KobayashiHiroshi KomanoToshimasa Nakayama
    • Etsuko IguchiMasakazu KobayashiHiroshi KomanoToshimasa Nakayama
    • G03F7004
    • G03F7/091
    • The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent. The method for forming a resist pattern comprises applying the composition for forming an antireflective coating film to a semiconductor substrate, drying the composition coated, irradiating the entire surface of the coated material with actinic rays so that it undergoes crosslinking reaction to form an antireflective coating film thereon, applying a resist composition to the antireflective coating film, drying the coated material, and then subjecting the coated material to lithographic processing to form a resist pattern thereon.
    • 本发明提供了一种用于形成不易于在抗蚀剂组合物层和抗反射涂层之间混合的抗反射涂膜的组合物和形成具有优异的尺寸精度和截面形状的抗蚀剂图案的方法。 组合物由(A)在光化射线照射时产生酸的化合物,(B)在酸存在下进行交联反应的化合物,(C)染料和(D)有机溶剂。 形成抗蚀剂图案的方法包括将用于形成抗反射涂膜的组合物施加到半导体衬底上,干燥涂覆的组合物,用光化射线照射涂覆材料的整个表面,使其经历交联反应以形成抗反射涂膜 在其上涂布抗蚀剂组合物到抗反射涂膜上,干燥涂覆的材料,然后对涂覆材料进行光刻处理以在其上形成抗蚀剂图案。