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1. 发明授权

US06379859B2 Positive photoresist composition and process for forming resist pattern using same 失效
公开(公告)号：US06379859B2
公开(公告)日：2002-04-30
申请号：US09322978
申请日：1999-06-01
申请人： Takako Suzuki , Sachiko Tamura , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Sachiko Tamura , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0226 , G03F7/022
摘要： Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

2. 发明授权

US06406827B2 Positive photoresist composition and process for forming resist pattern 失效
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06406827B2
公开(公告)日：2002-06-18
申请号：US09322023
申请日：1999-05-28
申请人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/023 , G03F7/0226
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱溶性树脂，（B）例如双[2,5-二甲基-3-（2-羟基-5-甲基苄基）-4-羟基苯基]甲烷的醌二叠氮化物酯和 /或2,4-双[4-羟基-3-（4-羟基苄基）-5-甲基苄基] -6-环己基苯酚和（C）4,4'-双（二乙基氨基）二苯甲酮。该组合物具有高灵敏度和清晰度，并且改善了焦深范围特性和曝光不足。

3. 发明授权

US6030741A Positive resist composition 失效
标题翻译：正抗蚀剂组成
公开(公告)号：US6030741A
公开(公告)日：2000-02-29
申请号：US919368
申请日：1997-08-28
申请人： Kousuke Doi , Takako Suzuki , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Takako Suzuki , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , G03F7/20 , G03F7/30 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0048 , G03F7/0226
摘要： The present invention provides a positive resist composition and method capable of achieving a resist pattern whose photosensitivity is less variable relative to its thickness, which exhibits small thickness reduction even when the pattern is fine, is capable of coping with irregularities in the exposure value since it has a wide focal-depth range, and exhibits reduced size-deviation from the mask size. The positive resist composition comprises (A) an alkali-soluble resin, (B) a quinonediazide-group-containing compound, and (C) an organic solvent, wherein the ingredient (C) is a mixture solvent containing (i) 2-heptanone, (ii) ethyl lactate, and (iii) a high-boiling organic solvent having a boiling point of 200 to 350.degree. C. The above-described resist pattern can be formed by using the positive resist composition.
摘要翻译：本发明提供一种能够实现光敏性相对于其厚度变化较小的抗蚀剂图案的正型抗蚀剂组合物和方法，即使图案细小也能显示小的厚度减小，因此可以应对曝光值的不规则性具有宽的焦深范围，并且显示出与面罩尺寸的尺寸偏差的减小。正型抗蚀剂组合物包含（A）碱溶性树脂，（B）含醌二叠氮化物基团的化合物和（C）有机溶剂，其中成分（C）是含有（i）2-庚酮，（ii）乳酸乙酯，和（iii）沸点为200〜350℃的高沸点有机溶剂。上述抗蚀剂图案可以通过使用正性抗蚀剂组合物形成。

4. 发明授权

US5702861A Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US5702861A
公开(公告)日：1997-12-30
申请号：US791166
申请日：1997-01-30
申请人： Satoshi Niikura , Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Niikura , Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0226
摘要： A positive photoresist composition comprising: (A) an alkali-soluble resin; (B) a quinone diazide group-containing compound; and (C) at least one compound selected from the polyhydroxy compounds, such as 1,3-bis�2-(5-cyclohexyl-2-methyl-4-hydroxyphenyl)-2-propyl!benzene. The composition of the present invention exhibits excellent image contrast between exposed portions and unexposed portions, and actualizes formation of a resist pattern with excellent resolution, exposure range, and focal depth range.
摘要翻译：一种正性光致抗蚀剂组合物，其包含：（A）碱溶性树脂; （B）含醌二叠氮基的化合物; 和（C）至少一种选自多羟基化合物的化合物，例如1,3-双[2-（5-环己基-2-甲基-4-羟基苯基）-2-丙基]苯。本发明的组合物在曝光部分和未曝光部分之间显示出优异的图像对比度，并且实现了具有优异的分辨率，曝光范围和焦深范围的抗蚀剂图案的形成。

5. 发明授权

US06566031B1 Positive photoresist composition, substrate with a photosensitive film and process for imaging a resist pattern 失效
标题翻译：正性光致抗蚀剂组合物，具有感光膜的基材和用于成像抗蚀剂图案的方法
公开(公告)号：US06566031B1
公开(公告)日：2003-05-20
申请号：US09669589
申请日：2000-09-26
申请人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7021
CPC分类号： G03F7/022 , G03F7/0226 , G03F7/0236 , G03F7/091
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, (B) a photosensitizer including, for example, a quinonediazide ester of bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane, and (C) a compound having a gram absorption coefficient of 5 to 60 with respect to light with a wavelength of 365 nm.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱溶性树脂，（B）光敏剂，其包括例如双[2,5-二甲基-3-（2-羟基-5-甲基苄基）-4- 羟基苯基]甲烷，（C）相对于波长365nm的光，克吸收系数为5〜60的化合物。

6. 发明授权

US06300033B1 Positive photoresist composition and process for forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06300033B1
公开(公告)日：2001-10-09
申请号：US09318601
申请日：1999-05-26
申请人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Takako Suzuki , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/2002 , G03F7/022
摘要： In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.
摘要翻译：在包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物中，成分（B）含有（B-1）例如双[2,5-二甲基-3-（2 - 羟基-5-甲基苄基）-4-羟基苯基]甲烷或2,4-双[4-羟基-3-（4-羟基苄基）-5-甲基苄基] -6-环己基苯酚和（B-2）醌二叠氮化物例如没食子酸甲酯或2,2-双（2,3,4-三羟基苯基）丙烷。该组合物具有高灵敏度和清晰度，改善了焦深范围特性和曝光不足。

7. 发明授权

US06939926B2 Phenol novolak resin, production process thereof, and positive photoresist composition using the same 有权
标题翻译：苯酚酚醛清漆树脂，其制备方法和使用其的正性光致抗蚀剂组合物
公开(公告)号：US06939926B2
公开(公告)日：2005-09-06
申请号：US10773294
申请日：2004-02-09
申请人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G8/10 , C08G14/04 , G03F7/023 , C08G8/28
CPC分类号： G03F7/0236 , C08G14/04
摘要： A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected by 13C-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 μm and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.
摘要翻译：苯酚酚醛清漆树脂在每个分子量分数基本上不变的树脂结构中具有邻 - 邻键（oo）/邻 - 对键（op）/对 - 对位键（pp）的峰强度比，并具有重均分子量分子量（Mw）为聚苯乙烯换算为3000〜20000，通过13 C-NMR分析检测出峰强度比。苯酚酚醛清漆树脂可以形成具有不大于0.35μm的精细抗蚀剂图案的良好形状的致密图案和隔离图案，并且具有令人满意的灵敏度，定义和焦深范围性质，并且具有均匀的树脂组合物每个分子量分数。还提供了一种制备苯酚酚醛清漆树脂的方法和使用该树脂的正性光致抗蚀剂组合物。

8. 发明授权

US06417317B1 Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin 失效
标题翻译：酚醛清漆树脂前体，酚醛清漆树脂和含有酚醛清漆树脂的正性光致抗蚀剂组合物
公开(公告)号：US06417317B1
公开(公告)日：2002-07-09
申请号：US09459606
申请日：1999-12-13
申请人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G1404
CPC分类号： G03F7/0236
摘要： A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.
摘要翻译：酚醛清漆树脂前体由键合的酚部分组成，相对于每个酚部分的羟基的邻位或对位中的氢原子之一被具有1至3个碳原子的烷基或烯基取代，并且其他两个氢原子通过亚甲基键键合。邻位键合的含量相对于总亚甲基的数量为30〜70％，前体的重均分子量为300〜10000。从该前体获得酚醛清漆树脂，正性光致抗蚀剂组合物包含该酚醛清漆树脂。本发明提供一种正光致抗蚀剂组合物，其包含较少的双核化合物，抑制浮渣形成，在定义和涂布性能方面优异，并提供具有令人满意的耐热性的抗蚀剂图案。

9. 发明授权

US06312863B1 Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06312863B1
公开(公告)日：2001-11-06
申请号：US09618723
申请日：2000-07-18
申请人： Shinichi Hidesaka , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Shinichi Hidesaka , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱溶性树脂和（B）包含1,2-萘醌二叠氮化物化合物的酯与下式（I）的化合物的光敏剂。这种正性光致抗蚀剂组合物具有令人满意的灵敏度，定义和深度聚焦性能，可以在形成混合抗蚀剂图案时形成具有良好形状的致密图案和隔离图案，并且可以最小化反转锥形形成由隔离焦点深度为负侧。

10. 发明授权

US06296992B1 Positive photoresist composition and process for forming contact hole 有权
标题翻译：正光致抗蚀剂组合物和形成接触孔的方法
公开(公告)号：US06296992B1
公开(公告)日：2001-10-02
申请号：US09540539
申请日：2000-03-31
申请人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Masaki Kurihara , Satoshi Niikura , Miki Kobayashi , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F730
CPC分类号： G03F7/022 , G03F7/0226
摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
摘要翻译：一种用于形成接触孔的正性光致抗蚀剂组合物，其包含（A）碱溶性树脂; （B）含萘醌二叠氮化物基团的化合物; 和（C）溶剂，其中成分（B）包括：至少一种多酚化合物的萘醌二叠氮化物，其中所述多酚化合物由4-6个苯环组成，各自通过亚甲基键键合，每个亚甲基链位于其他亚甲基链的间位，并且提供每个苯环具有羟基。根据本发明，可以提供正性光致抗蚀剂组合物和用于形成接触孔的方法，其中每一种都在使用相移的接触孔形成技术中精确地根据没有凹坑形成的掩模图案给出接触孔图案图像方法。

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