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1. 发明申请

US20050218572A1 Closed end type coiled spring with reduced initial deflection 失效
标题翻译：闭合端型螺旋弹簧，初始挠度降低
公开(公告)号：US20050218572A1
公开(公告)日：2005-10-06
申请号：US10502402
申请日：2002-12-27
申请人： Eiichi Soga , Yoshiaki Arai , Keisuke Yokota
发明人： Eiichi Soga , Yoshiaki Arai , Keisuke Yokota
IPC分类号： F16F1/06 , F16F1/13
CPC分类号： F16F1/13
摘要： In a coil spring of closed-end type, the coil spring is characterized in that a coupler is fixedly mounted between: an outer peripheral surface of a terminal convolution of a coil element rod; and, an outer peripheral surface of a subsequent convolution subsequent to the terminal convolution of the coil spring of closed-end type, whereby an amount of initial deflection is decreased.
摘要翻译：在封闭式螺旋弹簧中，螺旋弹簧的特征在于，耦合器固定地安装在线圈元件杆的端部卷绕的外周表面之间; 以及在封闭端型螺旋弹簧的端部卷绕之后的后续卷绕的外周表面，由此初始偏转量减小。

2. 发明授权

US4980015A Method for pulling single crystals 失效
标题翻译：单晶拉丝方法
公开(公告)号：US4980015A
公开(公告)日：1990-12-25
申请号：US360126
申请日：1989-06-01
申请人： Naoki Ono , Michio Kida , Yoshiaki Arai , Kensho Sahira
发明人： Naoki Ono , Michio Kida , Yoshiaki Arai , Kensho Sahira
IPC分类号： C30B15/04 , C30B15/12
CPC分类号： C30B15/04 , C30B15/12 , Y10T117/1052
摘要： In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

3. 发明授权

US4936949A Czochraski process for growing crystals using double wall crucible 失效
标题翻译：使用双壁坩埚生长晶体的Czochraski工艺
公开(公告)号：US4936949A
公开(公告)日：1990-06-26
申请号：US201018
申请日：1988-06-01
申请人： Michio Kida , Yoshiaki Arai , Kensho Sahira
发明人： Michio Kida , Yoshiaki Arai , Kensho Sahira
IPC分类号： C30B15/12
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure. The apparatus also includes at least one fluid passage for permitting the melted material to flow between the inner and outer crucibles when the multi-wall structure is defined by the inner and outer crucibles, a holder for holding the inner crucible, a heater disposed so as to surround the susceptor for heating the material in the crucible assembly, and a drive mechanism operable to move at least one of the holder and the susceptor vertically between a coupled position where the holder is supported by the susceptor in such a manner that the inner crucible is so placed within the outer crucible as to define the multi-wall structure and a released position where the holder is disengaged from the susceptor in such a manner that the inner crucible is released from the outer crucible.There is also provided a process which may be conveniently carried out in the apparatus described above.

4. 发明授权

US5858085A Method for growing a semiconductor single-crystal 失效
标题翻译：生长半导体单晶的方法
公开(公告)号：US5858085A
公开(公告)日：1999-01-12
申请号：US864721
申请日：1997-05-28
申请人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
发明人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
IPC分类号： C30B15/00 , C30B15/12 , C30B15/14 , H01L21/208
CPC分类号： C30B29/06 , C30B15/12 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1084
摘要： A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.
摘要翻译：一种用于生长在熔体附近具有优异的气流引导功能的高质量低碳浓度单晶的系统，其包含1）倒置的锥形导流盖，其位于双壁坩埚的上方并与其同轴，其下端位于熔体表面的正上方，并且在要生长的单晶的外表面与内坩埚的侧壁的内表面之间的空间中; 2）短通道，其包括穿过内坩埚的侧壁在高于熔体高度的位置的孔; 和3）设置在双壁坩埚上方并同轴的导流筒，其下端位于熔体表面的正上方，并且位于内坩埚的侧壁的外表面与内坩埚的内表面之间的空间中外坩埚的侧壁均布置在炉中。

5. 发明授权

US5680703A Method of manufacturing pressure regulator 失效
标题翻译：压力调节器的制造方法
公开(公告)号：US5680703A
公开(公告)日：1997-10-28
申请号：US767533
申请日：1996-12-16
申请人： Tomohiro Ono , Shinichi Hagiwara , Yoshiaki Arai
发明人： Tomohiro Ono , Shinichi Hagiwara , Yoshiaki Arai
IPC分类号： F16L55/04 , B23P11/00 , B23P15/00 , F16K17/04 , G05D16/06
CPC分类号： G05D16/0663 , B23P11/005 , B23P15/001 , Y10T137/0497 , Y10T137/7836 , Y10T29/49416 , Y10T29/49423 , Y10T29/49915
摘要： There is disclosed a method of manufacturing, in which a diaphragm not provided with an annular rib is fastened to a housing through a spring casing. The method of manufacturing comprises: a process, in which supports of a supporting slider rested on a floating block through a supporting spring, which is mounted in a receiving chamber of a lower die are made to extend through fluid passing holes of the housing, and the housing is rested on the supporting slider; a process, in which a spring casing is set in a receiving cavity of an upper punch vertically movably disposed at a position upwardly of the lower die, with an end portion of an opening of the spring casing being opposed to the housing; a process, in which the upper is approachingly moved toward the lower die, whereby the diaphragm is pressed through a coil spring for regulating pressure which is assembled in the spring casing so that the outer peripheral portion of the diaphragm is brought into contact with the flange of the housing; and a process, in which the downward movement of the upper punch toward the lower die is continued, whereby the end portion of the opening of the spring casing is bent to an end face of the housing under the cooperation between the upper punch and the lower die so that a staking forming is carried out.
摘要翻译：公开了一种制造方法，其中没有设置有环形肋的隔膜通过弹簧壳体紧固到壳体。制造方法包括：将安装在下模的接收室中的支撑滑块支撑在通过支撑弹簧的浮动块上的过程被制成延伸穿过壳体的流体通过孔，并且壳体搁置在支撑滑块上; 其中弹簧壳体被设置在上冲头的容纳腔中，所述上冲头可以垂直移动地设置在下模的上方的位置处，弹簧壳体的开口的端部与壳体相对; 其中上部面向下模移动，由此隔膜通过用于调节组装在弹簧壳体中的压力的螺旋弹簧压紧，使得隔膜的外周部分与凸缘接触的住房; 以及上冲头朝向下模的向下运动继续的过程，由此弹簧壳的开口的端部在上冲头和下冲头之间的协作下弯曲到壳体的端面模具，从而进行铆钉成形。

6. 发明授权

US5474022A Double crucible for growing a silicon single crystal 失效
标题翻译：用于生长硅单晶的双坩埚
公开(公告)号：US5474022A
公开(公告)日：1995-12-12
申请号：US420350
申请日：1995-04-11
申请人： Keisei Abe , Hisashi Furuya , Norihisa Machida , Yoshiaki Arai
发明人： Keisei Abe , Hisashi Furuya , Norihisa Machida , Yoshiaki Arai
IPC分类号： C30B15/00 , C30B15/12 , C30B35/00
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1052 , Y10T117/1056
摘要： There is provided a double crucible for growing a silicon single crystal in which the partition wall 17 in the shape of ring is concentric with the main crucible 6 in the shape of bottomed cylinder and the lower end of the partition wall 17 is fixed on the inner bottom of the main crucible, and thus the outer crucible 18 and the inner crucible 19 are formed inside the main crucible. The partition wall 17 is uniform in thickness and has introducing holes 20 in its lower part which link the outer crucible with the inner crucible. The partition wall is made so that the inner diameter of its lower part may be smaller than the inner diameter of its upper part. Supposing that A is the diameter of the partition wall at a level of molten silicon, h is a depth from the surface of the molten silicon to the introducing holes, V(out) is an amount of molten silicon stored in the outer crucible, and V(in) is an amount of molten stored in the inner crucible, the relation of D/A=1.5 to 3, 2h/A>1, and V(out)/V(in)=0.4 to 0.9, is satisfied. The invention reduces the number of coarse COPs of 0.3 .mu.m or greater in diameter generated after Sc-1 cleaning on the surface of a silicon wafer made of a single crystal bar grown without making larger in size the furnace of a silicon single crystal continuously growing apparatus.
摘要翻译：提供了一种用于生长硅单晶的双坩埚，其中环形分隔壁17与主坩埚6同心，为有底圆筒形，分隔壁17的下端固定在内部主坩埚的底部，因此外坩埚18和内坩埚19形成在主坩埚的内部。分隔壁17的厚度均匀，并且在其下部具有连接外坩埚与内坩埚的引入孔20。分隔壁被制成使得其下部的内径可以小于其上部的内径。假设A是在熔融硅水平处的分隔壁的直径，h是从熔融硅表面到引入孔的深度，V（out）是存储在外坩埚中的熔融硅的量， V（in）是存储在内坩埚中的熔融量，D / A = 1.5〜3,2h / A> 1，V（out）/ V（in）= 0.4〜0.9的关系成立。本发明减少了在不增加尺寸的单晶棒制成的硅晶片的表面上在Sc-1清洁之后产生的直径为0.3μm或更大的粗大COP的数量，硅单晶的炉连续生长仪器。

7. 发明授权

US5009862A Apparatus and process for growing crystals of semiconductor materials 失效
标题翻译：用于生长半导体材料晶体的装置和工艺
公开(公告)号：US5009862A
公开(公告)日：1991-04-23
申请号：US527887
申请日：1990-05-23
申请人： Michio Kida , Yoshiaki Arai , Kensho Sahira
发明人： Michio Kida , Yoshiaki Arai , Kensho Sahira
IPC分类号： C30B15/12
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure. The apparatus also includes at least one fluid passage for permitting the melted material to flow between the inner and outer crucibles when the multi-wall structure is defined by the inner and outer crucibles, a holder for holding the inner crucible, a heater disposed so as to surround the susceptor for heating the material in the crucible assembly, and a drive mechanism operable to move at least one of the holder and the susceptor vertically between a coupled position where the holder is supported by the susceptor in such a manner that the inner crucible is so placed within the outer crucible as to define the multi-wall structure and a released position where the holder is disengaged from the susceptor in such a manner that the inner crucible is released from the outer crucible.There is also provided a process which may be conveniently carried out in the apparatus described above.

8. 发明授权

US4882260A Positive-working photosensitive quinone diazide composition with alkali insoluble dye and alkali soluble dye 失效
标题翻译：正色光敏醌二叠氮化合物与碱不溶性染料和碱溶性染料
公开(公告)号：US4882260A
公开(公告)日：1989-11-21
申请号：US059556
申请日：1987-06-05
申请人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
发明人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
IPC分类号： G03C1/00 , C09D161/08 , G03C1/72 , G03F7/004 , G03F7/022 , G03F7/025 , G03F7/04 , G03F7/09 , H01L21/027 , H01L21/30
CPC分类号： G03F7/091
摘要： The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.
摘要翻译：在制造半导体器件的精细图案化中适合作为光致抗蚀剂材料的光敏组合物包含作为光敏剂的碱不溶性染料和碱溶性染料的组合，其中每种具有光吸收性的染料波长范围为230〜500nm，以规定的量和它们之间的规定比例。由于组合染料的配制，基板表面上的下面的铝涂层的不期望的卤化现象大大降低，使得用该组合物获得的图案化抗蚀剂层即使在亚微米中也是原始图案的高保真再现图案线的横截面形状的良好矩形度的细度范围。

9. 发明申请

US20080142354A1 Carbonizing Apparatus, Carbonizing System and Carbonizing Method 审中-公开
标题翻译：碳化装置，碳化系统和碳化方法
公开(公告)号：US20080142354A1
公开(公告)日：2008-06-19
申请号：US10566905
申请日：2004-07-30
申请人： Keiichi Yokoyama , Masaaki Fujiwara , Sadatoshi Ueda , Yoshiaki Arai , Tatsushi Kudo , Shigeru Miyahara
发明人： Keiichi Yokoyama , Masaaki Fujiwara , Sadatoshi Ueda , Yoshiaki Arai , Tatsushi Kudo , Shigeru Miyahara
IPC分类号： C10B35/00 , C10B31/00
CPC分类号： C10B53/02 , C10B49/04 , C10J3/482 , C10J2300/0956 , Y02E50/14 , Y02P20/129
摘要： To make it easier to carbonize the processing target material to a desired carbonized condition and also to make installment within a limited installment space possible. A carbonizing apparatus includes a carbonizing furnace having a feeding portion for a processing target material, a takeout portion for a carbonized material, a blowout portion for combustion air and an exhausting portion for combustion exhaust gas and a stirring device capable of stirring the processing target material inside the carbonizing furnace. The blowout amount of the combustion air is adjustable. The apparatus is operable to carbonize the processing target material fed from the feeding portion, with stirring, spontaneously combusting and moving the material while moving this material toward the takeout portion and subsequently to take out the resultant carbonized material from the takeout portion. The carbonizing furnace is constructed as a vertical type including the feeding portion and the exhausting portion at an upper section of the furnace and including the takeout portion and the blowout portion at a lower section of the furnace, so that the processing target material can be moved by the deadweight thereof toward the takeout portion, a takeout speed of the carbonized material from the takeout portion being adjustable. The stirring device includes a stirring member capable of swiveling about a vertical axis X.
摘要翻译：为了使处理目标材料碳化成期望的碳化状态并且还可以在有限的安装空间内进行安装。碳化装置包括碳化炉，其具有用于加工对象材料的进料部分，用于碳化材料的取出部分，用于燃烧空气的吹出部分和用于燃烧废气的排出部分，以及能够搅拌处理目标材料的搅拌装置在碳化炉内。燃烧空气的喷出量是可调节的。该装置可操作地将从进料部分供给的处理目标材料碳化，同时搅拌，自动燃烧和移动材料，同时将该材料朝向取出部分移动，然后从取出部分取出生成的碳化材料。碳化炉构成为在炉的上部具有供给部和排气部的垂直型，在炉的下部具有取出部和吹出部，能够移动加工对象物通过其自重朝向取出部分，来自取出部分的碳化材料的取出速度是可调节的。搅拌装置包括能够围绕垂直轴线X旋转的搅拌构件。

10. 发明授权

US07213802B2 Closed end type coiled spring with reduced initial deflection 失效
标题翻译：闭合端型螺旋弹簧，初始挠度降低
公开(公告)号：US07213802B2
公开(公告)日：2007-05-08
申请号：US10502402
申请日：2002-12-27
申请人： Eiichi Soga , Yoshiaki Arai , Keisuke Yokota , Yasuhiro Saito
发明人： Eiichi Soga , Yoshiaki Arai , Keisuke Yokota , Yasuhiro Saito
IPC分类号： F16F1/12
CPC分类号： F16F1/13
摘要： In a coil spring of closed-end type, the coil spring is characterized in that a coupler is fixedly mounted between: an outer peripheral surface of a terminal convolution of a coil element rod; and, an outer peripheral surface of a subsequent convolution subsequent to the terminal convolution of the coil spring of closed-end type, whereby an amount of initial deflection is decreased.
摘要翻译：在封闭式螺旋弹簧中，螺旋弹簧的特征在于，耦合器固定地安装在线圈元件杆的端部卷绕的外周表面之间; 以及在封闭端型螺旋弹簧的端部卷绕之后的后续卷绕的外周表面，由此初始偏转量减小。

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