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51. 发明授权

US07693198B2 Laser device 有权
标题翻译：激光设备
公开(公告)号：US07693198B2
公开(公告)日：2010-04-06
申请号：US11742627
申请日：2007-05-01
申请人： Ryota Sekiguchi , Toshihiko Ouchi
发明人： Ryota Sekiguchi , Toshihiko Ouchi
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S1/02 , H01S5/1046 , H01S5/12 , H01S5/3402 , H01S5/343 , H01S2302/02
摘要： A laser device including a gain medium that has a gain, a waveguide for propagating an electromagnetic wave, and a resonant structure comprised of the waveguide. The gain medium extends in the propagation direction, and is sandwiched, at the top and bottom surfaces in the thickness direction thereof, between a first cladding and a second cladding of negative dielectric constant media. The gain medium is provided with a lateral structure adjacent to at least one of the side surfaces thereof in the width direction perpendicular to the propagation direction and the thickness direction. The lateral structure includes a positive dielectric constant medium which is sandwiched, at its top and bottom surfaces in the thickness direction thereof, between the negative dielectric constant media. The waveguide is comprised of the gain medium, the lateral structure, the first cladding and the second cladding.
摘要翻译：包括具有增益的增益介质的激光装置，用于传播电磁波的波导和由波导构成的共振结构。增益介质在传播方向上延伸，并且在其厚度方向的顶表面和底表面处夹在负介电常数介质的第一包层和第二包层之间。增益介质在垂直于传播方向和厚度方向的宽度方向上设置有与其侧表面中的至少一个相邻的横向结构。横向结构包括正介电常数介质，该介电常数介质在其介电常数介质的负介电常数介质之间夹在其厚度方向的顶表面和底表面。波导包括增益介质，横向结构，第一包层和第二包层。

52. 发明授权

US07688870B2 Optical amplifier-integrated super luminescent diode and external cavity laser using the same 有权
标题翻译：光放大器集成超发光二极管和外腔激光器使用相同
公开(公告)号：US07688870B2
公开(公告)日：2010-03-30
申请号：US12182543
申请日：2008-07-30
申请人： Su Hwan Oh , Jung Jin Ju
发明人： Su Hwan Oh , Jung Jin Ju
IPC分类号： H01S3/00 , H01S5/00
CPC分类号： H01S5/141 , H01L33/0045 , H01S5/026 , H01S5/101 , H01S5/1014 , H01S5/16 , H01S5/227 , H01S5/50
摘要： Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD.A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.
摘要翻译：提供了一种超低功耗的超级发光二极管，由于低电流操作的低阈值电流和高输出功率而具有低功耗，适用于外腔激光器。用于外腔激光器的超发光二极管被分为超发光二极管（SLD）区域和半导体光放大器（SOA）区域，以提供具有低阈值电流和近似双输出功率的光源 SLD。超发光二极管集成反射光放大器包括具有超发光二极管（SLD）区域的基板和用于放大从SLD区域产生的光的半导体光放大器（SOA）区域，具有掩埋异质结构的光波导，包括在SLD上延伸的有源层和衬底上的SOA区域并在SOA区域中渐缩的掩埋异质结构; 电流阻挡层，形成在有源层周围，用于阻挡电流流向除有源层以外的层，电流阻挡层包括具有不同导电类型的半导体层的叠层; 以及形成在光波导和电流阻挡层上的覆层。

53. 发明授权

US07666694B2 Method for manufacturing semiconductor laser device and semiconductor laser device 有权
标题翻译：半导体激光器件和半导体激光器件的制造方法
公开(公告)号：US07666694B2
公开(公告)日：2010-02-23
申请号：US11522356
申请日：2006-09-18
申请人： Masahide Kobayashi , Shotaro Kitamura
发明人： Masahide Kobayashi , Shotaro Kitamura
IPC分类号： H01L27/15 , H01S5/22
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/12 , H01S5/1231 , H01S5/124 , H01S5/125 , H01S5/2222 , H01S5/2275 , H01S5/34306
摘要： An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 μm.
摘要翻译：由于可以通过简单且容易的方法消除在外延层中产生的结晶度劣化的影响，并且具有稳定的特性如半导体激光器件，例如阈值电流，斜率效率，器件寿命和可以呈现类似的东西。根据本发明的半导体激光器件的制造方法包括：在半导体衬底的表面或半导体衬底的表面上的膜上部分地形成衍射光栅; 以及通过在衍射光栅的表面上形成外延层来形成多层膜。形成衍射光栅的操作包括形成衍射光栅的操作，使得衍射光栅在与半导体激光器件的空腔方向正交的方向上的宽度被呈现为等于或大于总和的宽度的台面宽度和30μm。

54. 发明申请

US20100034233A1 SURFACE-EMISSION TYPE SEMICONDUCTOR LASER 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US20100034233A1
公开(公告)日：2010-02-11
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激发波长λ0的光程长度（L）被给定为0.9×λλ<= L <= 1.1×λ10，并且表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中的光程长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

55. 发明授权

US07655485B2 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 有权
标题翻译：通过选择性沉积形成的半导体层和用于沉积半导体层的方法
公开(公告)号：US07655485B2
公开(公告)日：2010-02-02
申请号：US11937921
申请日：2007-11-09
申请人： Akitaka Kimura
发明人： Akitaka Kimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/145 , H01S5/227 , H01S5/2272 , H01S5/32341 , Y10T428/24273
摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.
摘要翻译：在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即，提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

56. 发明申请

US20100019255A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100019255A1
公开(公告)日：2010-01-28
申请号：US12311916
申请日：2008-05-20
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/145 , H01S5/2201 , H01S5/2222 , H01S5/2223 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3077 , H01S5/3211 , H01S5/3432
摘要： There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion (20) composed of a first compound semiconductor layer (abbreviated as a layer hereinafter) (21) having a first conductivity type, an active layer (23), and a second layer (22) having a second conductivity type, and (B) a current-blocking layer (40) in contact with the side of the light-emitting portion and composed of a third layer (43) having the first conductivity type and a fourth layer (44) having the second conductivity type, wherein the impurity for imparting the first conductivity type to the first layer (21) includes an impurity in the first layer (21) at a substitution site which is uncompetitive with a substitution site of the impurity in the second layer (22), for imparting the second conductivity type to the second layer (22), and the impurity for imparting the first conductivity type to the third layer (43) includes an impurity in the third layer (43) at a substitution site which is competitive with a substitution site of the impurity in the fourth layer (44), for imparting the second conductivity type to the fourth layer (44).
摘要翻译：提供一种半导体发光器件，其能够进一步减小电流阻挡层中的漏电流，并且包括（A）由第一化合物半导体层（简称为层）构成的发光部（20）（21），具有第一导电类型的有源层（23）和具有第二导电类型的第二层（22），和（B）与所述第二导电类型的侧面接触的电流阻挡层（40）发光部分，并且由具有第一导电类型的第三层（43）和具有第二导电类型的第四层（44）组成，其中用于赋予第一层（21）的第一导电类型的杂质包括杂质在与第二层（22）中的杂质的取代部位不具竞争力的取代位置处的第一层（21）中，用于将第二导电类型赋予第二层（22），并且用于赋予第一层导电类型到th 第三层（43）在与第四层（44）中的杂质的取代位置竞争的取代位置处包含在第三层（43）中的杂质，用于将第二导电类型赋予第四层（44））。

57. 发明授权

US07627009B2 Light-emitting device on n-type InP substrate heavily doped with sulfur 有权
标题翻译：在n型InP衬底上重掺杂硫的发光器件
公开(公告)号：US07627009B2
公开(公告)日：2009-12-01
申请号：US11907135
申请日：2007-10-09
申请人： Tomokazu Katsuyama , Michio Murata
发明人： Tomokazu Katsuyama , Michio Murata
IPC分类号： H01S5/20 , H01S5/00 , H01L33/00
CPC分类号： H01S5/305 , H01L33/30 , H01S5/06226 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/3054 , H01S5/3211
摘要： The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer. The substrate of the invention is highly doped with sulfur (S) to obtain high quality surface whose etch pit density (EPD) is less than 100 cm−2. The device includes such substrate, an optical guiding portion with an active layer, and a current blocking portion provided so as to bury the guiding portion. This current blocking portion includes, from the side of the substrate, a p-type layer, an n-type layer and another p-type layer. The device of the invention provides an n-type layer that is moderately doped with silicon between the n-type substrate and the p-type current blocking layer to prevent the inter diffusion of impurities from the substrate to the p-type layer.
摘要翻译：本发明提供了防止杂质从高掺杂n型InP衬底到p型电流阻挡层的相互扩散的发光器件的结构。本发明的衬底高度掺杂有硫（S）以获得蚀刻坑密度（EPD）小于100cm-2的高质量表面。该装置包括这种基板，具有有源层的光引导部分和设置成埋入引导部分的电流阻挡部分。该电流阻挡部分包括从衬底侧的p型层，n型层和另一p型层。本发明的器件提供了在n型衬底和p型电流阻挡层之间适度掺杂硅的n型层，以防止杂质从衬底到p型层的相互扩散。

58. 发明申请

US20090279828A1 WAVELENGTH LOCKING AND POWER CONTROL SYSTEMS FOR MULTI-CHANNEL PHOTONIC INTEGRATED CIRCUITS (PICs) 有权
标题翻译：用于多通道光电集成电路的波长锁定和功率控制系统（PIC）
公开(公告)号：US20090279828A1
公开(公告)日：2009-11-12
申请号：US12507763
申请日：2009-07-22
申请人： Alan C. Nilsson , Robert W. Smith , Yishai Kagan , Paul N. Freeman
发明人： Alan C. Nilsson , Robert W. Smith , Yishai Kagan , Paul N. Freeman
IPC分类号： G02B6/12 , H01S3/10 , H01S3/13
CPC分类号： H01S5/0687 , B82Y20/00 , G02B6/12004 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/12033 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/25 , H04B10/2914 , H04B10/50 , H04B10/572 , H04J14/02
摘要： A transmissive active channel element is provided in each signal channel of a monolithic multi-channel TxPIC where each channel also includes a modulated source. The active channel element functions both as a power control element for both monitoring and regulating the output channel signal level of each signal channel and as a modulator for channel wavelength tagging or labeling to provide for wavelength locking the modulated sources. The power regulating function is also employed to control the channel signal power outputs of each channel to be uniform across the channel signal array. All of these functions are carried out by a feedback loop utilizing digital signal processing.
摘要翻译：在单片多通道TxPIC的每个信号通道中提供透射有源通道元件，其中每个通道还包括调制源。有源通道元件既用作监视和调节每个信号通道的输出通道信号电平的功率控制元件，也用作用于通道波长标签或标签的调制器，以提供波长锁定调制源。功率调节功能也用于控制每个通道的通道信号功率输出在通道信号阵列上是均匀的。所有这些功能都通过利用数字信号处理的反馈回路进行。

59. 发明申请

US20090268772A1 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US20090268772A1
公开(公告)日：2009-10-29
申请号：US12385735
申请日：2009-04-17
申请人： Hideo Arimoto , Masahiro Aoki
发明人： Hideo Arimoto , Masahiro Aoki
IPC分类号： H01S5/026 , H01S3/08
CPC分类号： H01S5/141 , H01S5/02248 , H01S5/02284 , H01S5/0267 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/227 , H01S5/4087
摘要： A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.
摘要翻译：可以通过在AlN基座上布置增益芯片，标准具滤波器和第五反射镜并纵向积分其中集成45°反射镜和透镜的增益芯片来实现尺寸比常规小的波长可变激光器，标准具过滤器。激光腔具有光从通过增益芯片的端面实现的第一反射镜穿过有源层的结构，被45°反射镜以90°的角度反射，然后通过透镜。通过透镜的光被转换为平行光，通过标准具过滤器并到达第五反射镜，然后被反射。反射光通过相同的光路返回并到达由增益芯片的端面实现的第一反射镜。

60. 发明授权

US07550304B2 Method for manufacturing semiconductor laser element 有权
标题翻译：制造半导体激光元件的方法
公开(公告)号：US07550304B2
公开(公告)日：2009-06-23
申请号：US11624722
申请日：2007-01-19
申请人： Takashi Nagira , Chikara Watatani
发明人： Takashi Nagira , Chikara Watatani
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2086 , H01S5/2201 , H01S5/2206 , H01S5/2222 , H01S5/2275 , H01S5/34306
摘要： A method for manufacturing a semiconductor laser element includes forming a semiconductor laminated structure, having an active layer, on a substrate; etching the semiconductor laminated structure to form a mesa; exposing the mesa to an oxygen-containing ambient forming an oxide layer on the mesa; removing a first part of the oxide layer from the mesa at a temperature lower than a critical temperature at which bonds between atoms of the oxide layer become stronger, by etching with a gas; removing the remainder of the oxide layer from the mesa at a temperature higher than the critical temperature by etching with a gas; and forming a burying layer coating the mesa.
摘要翻译：一种制造半导体激光元件的方法包括在衬底上形成具有有源层的半导体叠层结构; 蚀刻半导体层叠结构以形成台面; 将台面暴露于在台面上形成氧化物层的含氧环境; 通过用气体蚀刻，在低于氧化物层的原子之间的键合变得更强的临界温度的温度下从台面去除第一部分氧化物层; 在高于临界温度的温度下通过用气体蚀刻从台面去除剩余的氧化物层; 并形成涂覆台面的掩埋层。

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