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1. 发明授权

US08619829B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08619829B2
公开(公告)日：2013-12-31
申请号：US12813235
申请日：2010-06-10
申请人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
发明人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译：本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。

2. 发明授权

US08619826B2 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US08619826B2
公开(公告)日：2013-12-31
申请号：US12797111
申请日：2010-06-09
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino , Eiji Takase , Yuta Yoshida
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino , Eiji Takase , Yuta Yoshida
IPC分类号： H01S3/00
CPC分类号： H01S5/4031 , H01S5/0421 , H01S5/0425 , H01S5/22
摘要： A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.
摘要翻译：激光二极管包括：多个彼此平行布置的条形激光器结构，并且包括下包层，有源层和上覆层; 多个条形上电极单独地形成在各个激光器结构的顶面上，并且电连接到上包层; 多个布线层至少单独并电连接到各个上电极之一; 以及多个焊盘电极，其形成在与所述多个激光结构的区域不同的区域中，并且其间布线层电连接到各个上电极之一。各个布线层的各个布线层与上部电极接触的区域的端部不同。

3. 发明申请

US20120107972A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20120107972A1
公开(公告)日：2012-05-03
申请号：US13348501
申请日：2012-01-11
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
IPC分类号： H01L33/36
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译：提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。

4. 发明授权

US07915625B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07915625B2
公开(公告)日：2011-03-29
申请号：US12208855
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/16 , H01S5/1064 , H01S5/2201 , H01S5/221 , H01S5/2222 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3432
摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.
摘要翻译：本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成，掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与第三化合物半导体层中的杂质的取代位置。

5. 发明申请

US20110002354A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110002354A1
公开(公告)日：2011-01-06
申请号：US12813235
申请日：2010-06-10
申请人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
发明人： Yuta Yoshida , Sachio Karino , Takahiro Yokoyama , Makoto Nakashima , Eiji Takase
IPC分类号： H01S5/026 , H01S5/22
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译：本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。

6. 发明申请

US20100047947A1 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing 失效
标题翻译：半导体发光元件，其制造方法，背衬上形成的凸部和用于背衬的凸部形成方法
公开(公告)号：US20100047947A1
公开(公告)日：2010-02-25
申请号：US12461409
申请日：2009-08-11
申请人： Kiyotaka Yashima , Yoshinari Kiwaki , Kamada Michiru , Sachio Karino , Hironobu Narui , Nobukata Okano
发明人： Kiyotaka Yashima , Yoshinari Kiwaki , Kamada Michiru , Sachio Karino , Hironobu Narui , Nobukata Okano
IPC分类号： H01L21/306
CPC分类号： H01S5/227 , H01L33/24 , H01S5/22 , H01S5/223 , H01S5/3202
摘要： A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).
摘要翻译：在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

7. 发明申请

US20090245313A1 MULTI-BEAM SEMICONDUCTOR LASER 有权
标题翻译：多光子半导体激光器
公开(公告)号：US20090245313A1
公开(公告)日：2009-10-01
申请号：US12398498
申请日：2009-03-05
申请人： Sachio KARINO
发明人： Sachio KARINO
IPC分类号： H01S5/24
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/0425 , H01S5/2086 , H01S5/2201 , H01S5/2213 , H01S5/227 , H01S5/2272 , H01S2301/14
摘要： An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.
摘要翻译：边缘发射多光束半导体激光器包括数量为N的并置条状发光部分（其中N> = 2），其中将发光部分彼此电分离的分离槽设置在发光部分，部分不连续的第一凹部设置在第一发光部分的外侧，部分不连续的第二凹部设置在第N发光部分的外侧。

8. 发明申请

US20090072253A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER 失效
标题翻译：半导体发光器件，其制造方法和形成下层的方法
公开(公告)号：US20090072253A1
公开(公告)日：2009-03-19
申请号：US12208776
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/24 , H01S5/0207 , H01S5/2201 , H01S5/2222 , H01S5/2226 , H01S5/2227 , H01S5/227 , H01S5/3203 , H01S2304/04
摘要： Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
摘要翻译：本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并且通过外延生长形成在衬底的主表面上，下层沿平行于衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

9. 发明授权

US08802458B2 Laser diode and method of manufacturing the same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08802458B2
公开(公告)日：2014-08-12
申请号：US13348501
申请日：2012-01-11
申请人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
发明人： Makoto Nakashima , Takahiro Yokoyama , Sachio Karino
IPC分类号： H01L33/36
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译：提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。

10. 发明申请

US20120122257A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, FABRICATION METHOD THEREOF, CONVEX PART FORMED ON BACKING, AND CONVEX PART FORMATION METHOD FOR BACKING 有权
标题翻译：半导体发光元件，其制造方法，背面形成的凸部，以及用于支撑的凸起部分形成方法
公开(公告)号：US20120122257A1
公开(公告)日：2012-05-17
申请号：US13356202
申请日：2012-01-23
申请人： Kiyotaka Yashima , Yoshinari Kiwaki , Kamada Michiru , Sachio Karino , Hironobu Narui , Nobukata Okano
发明人： Kiyotaka Yashima , Yoshinari Kiwaki , Kamada Michiru , Sachio Karino , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/14 , H01L33/16
CPC分类号： H01S5/227 , H01L33/24 , H01S5/22 , H01S5/223 , H01S5/3202
摘要： A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).
摘要翻译：在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

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