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1. 发明授权

US07666694B2 Method for manufacturing semiconductor laser device and semiconductor laser device 有权
标题翻译：半导体激光器件和半导体激光器件的制造方法
公开(公告)号：US07666694B2
公开(公告)日：2010-02-23
申请号：US11522356
申请日：2006-09-18
申请人： Masahide Kobayashi , Shotaro Kitamura
发明人： Masahide Kobayashi , Shotaro Kitamura
IPC分类号： H01L27/15 , H01S5/22
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/12 , H01S5/1231 , H01S5/124 , H01S5/125 , H01S5/2222 , H01S5/2275 , H01S5/34306
摘要： An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 μm.
摘要翻译：由于可以通过简单且容易的方法消除在外延层中产生的结晶度劣化的影响，并且具有稳定的特性如半导体激光器件，例如阈值电流，斜率效率，器件寿命和可以呈现类似的东西。根据本发明的半导体激光器件的制造方法包括：在半导体衬底的表面或半导体衬底的表面上的膜上部分地形成衍射光栅; 以及通过在衍射光栅的表面上形成外延层来形成多层膜。形成衍射光栅的操作包括形成衍射光栅的操作，使得衍射光栅在与半导体激光器件的空腔方向正交的方向上的宽度被呈现为等于或大于总和的宽度的台面宽度和30μm。

2. 发明申请

US20070064759A1 Method for manufacturing semiconductor laser device and semiconductor laser device 有权
标题翻译：半导体激光器件和半导体激光器件的制造方法
公开(公告)号：US20070064759A1
公开(公告)日：2007-03-22
申请号：US11522356
申请日：2006-09-18
申请人： Masahide Kobayashi , Shotaro Kitamura
发明人： Masahide Kobayashi , Shotaro Kitamura
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/12 , H01S5/1231 , H01S5/124 , H01S5/125 , H01S5/2222 , H01S5/2275 , H01S5/34306
摘要： An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 μm.
摘要翻译：由于可以通过简单且容易的方法消除在外延层中产生的结晶度劣化的影响，并且具有稳定的特性如半导体激光器件，例如阈值电流，斜率效率，器件寿命和可以呈现类似的东西。根据本发明的半导体激光器件的制造方法包括：在半导体衬底的表面或半导体衬底的表面上的膜上部分地形成衍射光栅; 以及通过在衍射光栅的表面上形成外延层来形成多层膜。形成衍射光栅的操作包括形成衍射光栅的操作，使得衍射光栅在与半导体激光器件的空腔方向正交的方向上的宽度被呈现为等于或大于总和的宽度的台面宽度和30 mum。

3. 发明授权

US5770466A Semiconductor optical integrated circuits and method for fabricating the same 失效
标题翻译：半导体光集成电路及其制造方法
公开(公告)号：US5770466A
公开(公告)日：1998-06-23
申请号：US400570
申请日：1995-03-08
申请人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
发明人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/40 , H01L21/20
CPC分类号： H01S5/4031 , H01S5/026 , H01S5/06256 , H01S2304/04 , H01S5/0265 , H01S5/06258 , H01S5/1003 , H01S5/125 , H01S5/2077 , H01S5/2272 , H01S5/4025 , H01S5/4068 , H01S5/4087
摘要： A semiconductor optical monolithic integration device has a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on an entire surface of the passive region by the metal organic vapor phase epitaxy and the epitaxial layers have a mesa structure in the active region and a plane structure in the passive region. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in the active and passive regions. The second mask pattern has a constant width. In the active region, the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer are provided on the plane structure epitaxial layers.
摘要翻译：半导体光学单片集成器件具有包括有源区和被动区的半导体衬底。包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。第一掩模图案沿波导方向具有宽度变化。外延层通过金属有机气相外延在无源区的整个表面上同时且非选择性地生长，并且外延层在有源区中具有台面结构和在被动区中具有平面结构。通过在由有源和无源区域中提供的第二掩模图案限定的第二选择性增长区域上的金属有机气相外延选择性地生长具有脊状结构的覆层。第二掩模图案具有恒定的宽度。在有源区域中，脊状覆层完全嵌入台面结构外延层，并且在无源区域中，脊状覆层设置在平面结构外延层上。

4. 发明授权

US5565693A Semiconductor optical integrated circuits 失效
标题翻译：半导体光集成电路
公开(公告)号：US5565693A
公开(公告)日：1996-10-15
申请号：US179049
申请日：1994-01-07
申请人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
发明人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/40 , H01L33/00
CPC分类号： H01S5/4031 , H01S5/026 , H01S5/06256 , H01S2304/04 , H01S5/0265 , H01S5/06258 , H01S5/1003 , H01S5/125 , H01S5/2077 , H01S5/2272 , H01S5/4025 , H01S5/4068 , H01S5/4087
摘要： A semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on the entirety of the passive region by metal organic vapor phase epitaxy and epitaxial layers having a mesa structure in the active region and a plane structure in the passive region are formed. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in both the active and passive regions. The second mask pattern has a constant width. In the active region the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer is provided on the plane structure epitaxial layers.
摘要翻译：半导体光学单片集成器件包括包括有源区和无源区的半导体衬底。包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。第一掩模图案沿波导方向具有宽度变化。外延层通过金属有机气相外延在整个无源区上同时且非选择性地生长，并且在有源区中具有台面结构并形成无源区中的平面结构的外延层。具有脊状结构的包覆层通过金属有机气相外延选择性地生长在由在有源区域和被动区域中提供的第二掩模图案限定的第二选择性增长区域上。第二掩模图案具有恒定的宽度。在有源区域中，脊状覆层完全嵌入台面结构外延层，并且在无源区域中，脊状覆层设置在平面结构外延层上。

5. 发明授权

US5374587A Method of manufacturing optical semiconductor element 失效
标题翻译：光半导体元件的制造方法
公开(公告)号：US5374587A
公开(公告)日：1994-12-20
申请号：US920880
申请日：1992-07-28
申请人： Shotaro Kitamura
发明人： Shotaro Kitamura
IPC分类号： H01L21/20 , H01L27/15 , H01S5/00 , H01S5/227 , H01S5/50
CPC分类号： H01L33/44 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/227 , H01S5/2272 , H01S5/5036 , Y10S148/026
摘要： In a method of manufacturing an optical semiconductor element including at least the steps of forming a mask having a stripe-like gap or interval on a semiconductor substrate, epitaxially growing a semiconductor ridge including an active layer on only an exposed gap portion of the semiconductor substrate, and epitaxially growing a semiconductor cladding layer to cover the ridge, the thickness of the active layer is substantially the same as the width of the active layer.
摘要翻译：在制造光半导体元件的方法中，至少包括在半导体衬底上形成具有条状间隙或间隔的掩模的步骤，仅在半导体衬底的暴露间隙部分上外延生长包括有源层的半导体脊并且外延生长覆盖脊的半导体包覆层时，有源层的厚度基本上与有源层的宽度相同。

6. 发明授权

US6052222A Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US6052222A
公开(公告)日：2000-04-18
申请号：US993749
申请日：1997-12-19
申请人： Shotaro Kitamura
发明人： Shotaro Kitamura
IPC分类号： H01S5/026 , H01S5/062 , H01S5/10 , H01S5/50 , H01L21/20 , G02F1/25 , H01S3/18
CPC分类号： H01S5/50 , H01S5/0265 , H01S5/06213 , H01S5/10 , H01S5/1085 , H01S5/1243
摘要： A semiconductor optical amplifier which has a good extinction ratio and a simple structure includes an optical waveguide having at least a curved portion. The optical waveguide has light input and output ends offset from each other to keep optical fibers out of alignment with each other at respective opposite ends of the optical waveguide.
摘要翻译：具有良好消光比和简单结构的半导体光放大器包括至少具有弯曲部分的光波导。光波导具有彼此偏移的光输入和输出端，以使光纤在光波导的相应相对端处彼此不对准。

7. 发明授权

US5659565A Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask for preventing current from leaking directly from cladding layer to substrate and process of fabrication thereof 失效
标题翻译：具有台面结构的半导体光学器件，其通过绝缘掩模横向包围以防止电流从包覆层直接泄漏到衬底及其制造工艺
公开(公告)号：US5659565A
公开(公告)日：1997-08-19
申请号：US280680
申请日：1994-07-27
申请人： Shotaro Kitamura
发明人： Shotaro Kitamura
IPC分类号： G02F1/025 , H01S5/00 , H01S5/042 , H01S5/10 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/343 , H01S5/50 , H01S3/18
CPC分类号： B82Y20/00 , G02F1/025 , H01S5/227 , H01S5/1085 , H01S5/2201 , H01S5/2272 , H01S5/3202 , H01S5/3211 , H01S5/34306 , H01S5/50
摘要： A semiconductor mesa structure including active, absorbing, or passive guide layer is surrounding laterally by insulating mask, and is buried by a cladding layer which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance.
摘要翻译：包括有源，吸收或被动引导层的半导体台面结构由绝缘掩模横向包围，并被覆在绝缘掩模上的覆层所掩埋，并且注入的电流流过包覆层进入台面结构，而不会从包覆层成为基板，使得半导体光学器件的性能得到改善。

8. 发明授权

US08477819B2 Semiconductor laser diode device and method of fabrication thereof 有权
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US08477819B2
公开(公告)日：2013-07-02
申请号：US12951820
申请日：2010-11-22
申请人： Shotaro Kitamura
发明人： Shotaro Kitamura
IPC分类号： H01S5/00
CPC分类号： H01S5/1209 , B82Y20/00 , H01S5/028 , H01S5/1206 , H01S5/1225 , H01S5/1231 , H01S5/124 , H01S5/2222 , H01S5/227 , H01S5/34306
摘要： Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods.
摘要翻译：公开了一种能够在确保令人满意的单模振荡的稳定性的情况下以高的前后光功率的输出进行工作的分布式反馈半导体激光二极管装置。分布式反馈半导体激光二极管器件被配置为包括在其光波导中形成的衍射光栅。在光波导的部分区域中，形成具有分布折射率特性的光栅部分和具有均匀折射率特性的无光栅空间部分的交替重复图案。具有均匀折射率特性的无光栅空间部分具有激光振荡波长的一半的光程长度，具有分布折射率特性的光栅部分至少包括五个光栅周期。

9. 发明授权

US07633986B2 Distributed feedback laser diode 失效
标题翻译：分布式反馈激光二极管
公开(公告)号：US07633986B2
公开(公告)日：2009-12-15
申请号：US11754861
申请日：2007-05-29
申请人： Shotaro Kitamura , Yasutaka Sakata
发明人： Shotaro Kitamura , Yasutaka Sakata
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01S5/028 , H01S5/124
摘要： A distributed feedback laser diode comprises a phase-shifting portion in diffraction gratings. The magnitude of a phase shift in the phase-shifting portion is 8Λ/40 to 9Λ/40, Λ representing twice the distance between the diffraction gratings. A main mode stands on a lower wavelength side than the center of a stop band when an injected current is of a level of a threshold current, whereas the main mode is shifted to the center of the stop band and a sub mode is suppressed from growing when the injected current is of a level of an operating current.
摘要翻译：分布反馈激光二极管包括衍射光栅中的相移部分。相移部分中的相移幅度为8λ/ 40至9λ/ 40，Lambda表示衍射光栅之间距离的两倍。当注入电流为阈值电流的电平时，主模式位于比阻带的中心更低的波长侧，而主模式转移到阻带的中心，并且抑制子模式增长当注入电流是工作电流的电平时。

10. 发明申请

US20070280321A1 DISTRIBUTED FEEDBACK LASER DIODE 失效
标题翻译：分布式反馈激光二极管
公开(公告)号：US20070280321A1
公开(公告)日：2007-12-06
申请号：US11754861
申请日：2007-05-29
申请人： Shotaro Kitamura , Yasutaka Sakata
发明人： Shotaro Kitamura , Yasutaka Sakata
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/12 , H01S5/028 , H01S5/124
摘要： A distributed feedback laser diode comprises a phase-shifting portion in diffraction gratings. The magnitude of a phase shift in the phase-shifting portion is 8 Λ/40 to 9 Λ/40, Λ representing twice the distance between the diffraction gratings. A main mode stands on a lower wavelength side than the center of a stop band when an injected current is of a level of a threshold current, whereas the main mode is shifted to the center of the stop band and a sub mode is suppressed from growing when the injected current is of a level of an operating current.
摘要翻译：分布反馈激光二极管包括衍射光栅中的相移部分。相移部分中的相移幅度为8λ/ 40至9λ/ 40，λλ表示衍射光栅之间距离的两倍。当注入电流为阈值电流的电平时，主模式位于比阻带的中心更低的波长侧，而主模式转移到阻带的中心，并且抑制子模式增长当注入电流是工作电流的电平时。

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