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1. 发明申请

US20100034233A1 SURFACE-EMISSION TYPE SEMICONDUCTOR LASER 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US20100034233A1
公开(公告)日：2010-02-11
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激发波长λ0的光程长度（L）被给定为0.9×λλ<= L <= 1.1×λ10，并且表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中的光程长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

2. 发明申请

US20100020835A1 SURFACE EMITTING LASER 失效
标题翻译：表面发射激光
公开(公告)号：US20100020835A1
公开(公告)日：2010-01-28
申请号：US12518529
申请日：2007-12-18
申请人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/3095
摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ
摘要翻译：表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。此外，光谐振器单元分别与第一层和第二层接触。谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5lambda

3. 发明授权

US07881358B2 Surface emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US07881358B2
公开(公告)日：2011-02-01
申请号：US12518529
申请日：2007-12-18
申请人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/3095
摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ
摘要翻译：表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。此外，光谐振器单元分别与第一层和第二层接触。谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5λ

4. 发明授权

US07974328B2 Surface-emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US07974328B2
公开(公告)日：2011-07-05
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激光波长λ0的光程长度（L）为0.9×λ0＆nlE; L＆nlE; 1.1×λ0时，表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

5. 发明申请

US20080012388A1 Glass Mounting Structure 审中-公开
标题翻译：玻璃安装结构
公开(公告)号：US20080012388A1
公开(公告)日：2008-01-17
申请号：US11769155
申请日：2007-06-27
申请人： Yuuji Kinoshita , Takeshi Akagawa
发明人： Yuuji Kinoshita , Takeshi Akagawa
IPC分类号： B60J1/00
CPC分类号： B60J1/005 , B60J1/006 , B60J1/02
摘要： The present invention aims to provide a glass mounting structure that enables a glass to be mounted, preventing the breakage thereof.A locking member 52 is provided at a glass 13 closing an opening portion 11a in a cab 11, a mounting portion 54 opposed to the locking member 52 is formed at the opening portion 11a, and a locked member 57 is provided for mounting the glass 13 at the opening portion 11a by locking the locking member 52 to the mounting portion 54. The locked member 57 is held by the locking member 52 in the state where the locking member 52 is movable with respect to the mounting portion 54. The locking member 51 is provided at least at either a lower portion inner surface or an upper portion inner surface in a side portion of the windshield glass 13.
摘要翻译：本发明旨在提供一种能够安装玻璃的玻璃安装结构，防止其破损。锁定构件52设置在玻璃13处，该玻璃13关闭驾驶室11中的开口部11a，在开口部11a形成有与锁定构件52相对的安装部54，并且设有锁定构件57，通过将锁定构件52锁定到安装部分54，在开口部分11a处的玻璃13.锁定构件57在锁定构件52相对于安装部分54可移动的状态下被锁定构件52保持。锁定构件51至少设置在挡风玻璃13的侧部的下部内表面或上部内表面的任一个处。

6. 发明申请

US20070296238A1 Front Structure of Vehicle 审中-公开
标题翻译：车辆前部结构
公开(公告)号：US20070296238A1
公开(公告)日：2007-12-27
申请号：US11769267
申请日：2007-06-27
申请人： Yuuji Kinoshita , Teruyuki Taura , Takeshi Akagawa
发明人： Yuuji Kinoshita , Teruyuki Taura , Takeshi Akagawa
IPC分类号： B60J10/02
CPC分类号： B62D33/06 , B60J10/248 , B60J10/40 , B60J10/70 , B60J10/76 , B60J10/86 , B62D25/04
摘要： It is an object of the present invention to prevent deterioration of the appearance of a front pillar when a side door is open, thanks to surely covering the gap with a hollow-shape portion even if a gap between a molding and the front pillar is changed hollow-shape portion.A front pillar (17) is provided between a side portion of a windshield glass (13) and a front portion of a side door (14), and a molding (27) is fitted into an outer periphery portion of the windshield glass (13). Also, the inner surface of the side portion of the windshield glass (13) is bonded to the front pillar (17), and a hollow-shape portion (28d) to be brought into contact with the front pillar (17) is provided at the molding (27). Moreover, the hollow-shape portion (28d) is constructed to be brought into contact with the front pillar (17) so as to cover the gap between the molding (27) and the front pillar (17).
摘要翻译：本发明的目的是防止侧门打开时前柱的外观劣化，这是由于即使模制件与前柱之间的间隙发生变化，由于可靠地覆盖中空形部分的间隙中空部分。前挡板（17）设置在挡风玻璃（13）的侧部和侧门（14）的前部之间，并且将模制件（27）装配到挡风玻璃（13）的外周部分）。此外，挡风玻璃（13）的侧部的内表面与前柱（17）接合，并且设置与前柱（17）接触的中空部分（28d）在模制（27）。此外，中空部分（28d）被构造成与前柱（17）接触以覆盖模制件（27）和前支柱（17）之间的间隙。

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