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1. 发明授权

US10020638B2 Optical semiconductor device, semiconductor laser module, and optical fiber amplifier 有权
公开(公告)号：US10020638B2
公开(公告)日：2018-07-10
申请号：US15454444
申请日：2017-03-09
申请人： FURUKAWA ELECTRIC CO., LTD.
发明人： Junji Yoshida , Hirokazu Itoh , Satoshi Irino , Yuichiro Irie , Taketsugu Sawamura
IPC分类号： H01S5/00 , H01S5/32 , H01S5/022 , H01S3/067 , H01S5/20 , H01S5/343 , H01S5/10 , H01S5/22 , H01S5/227 , H01S3/04
CPC分类号： H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

2. 发明申请

US20170277065A1 LIGHT EMITTING COMPONENT, PRINT HEAD, AND IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20170277065A1
公开(公告)日：2017-09-28
申请号：US15460828
申请日：2017-03-16
申请人： FUJI XEROX CO., LTD.
发明人： Takashi KONDO
IPC分类号： B41J2/385 , H01L29/74 , H01L29/20 , H01L33/06 , H01L33/30 , H01L33/10 , H01S5/22 , H01L27/15 , H01L33/14
CPC分类号： H01S5/2205 , G03G15/04054 , H01L27/15 , H01L27/153 , H01L29/201 , H01L29/74 , H01L29/8605 , H01L33/06 , H01L33/105 , H01L33/145 , H01L33/30 , H01S5/0261 , H01S5/0427 , H01S5/18308 , H01S5/2222 , H01S5/3095 , H01S5/3216 , H01S5/4031 , H01S5/423
摘要： A light emitting component includes plural transfer elements, plural setting thyristors, and plural light emitting elements. The transfer elements are configured to be sequentially brought into an ON state. The setting thyristors are connected to the transfer elements, respectively. The setting thyristors are configured to be brought into a state where the setting thyristors are capable of changing to the ON state when the transfer elements are brought into the ON state. The light emitting elements are stacked on the setting thyristors through tunnel junctions, respectively. The light emitting elements are configured to emit light of increase a light emission amount when the setting thyristors are brought into the ON state.

3. 发明申请

US20170187168A1 OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER MODULE, AND OPTICAL FIBER AMPLIFIER 审中-公开
公开(公告)号：US20170187168A1
公开(公告)日：2017-06-29
申请号：US15454444
申请日：2017-03-09
申请人： FURUKAWA ELECTRIC CO., LTD.
发明人： Junji YOSHIDA , Hirokazu ITOH , Satoshi IRINO , Yuichiro IRIE , Taketsugu SAWAMURA
IPC分类号： H01S5/32 , H01S3/067 , H01S5/227 , H01S5/343 , H01S5/10 , H01S5/22 , H01S5/022 , H01S5/20
CPC分类号： H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

4. 发明授权

US09601905B2 Optical semiconductor device, semiconductor laser module, and optical fiber amplifier 有权
公开(公告)号：US09601905B2
公开(公告)日：2017-03-21
申请号：US14795387
申请日：2015-07-09
申请人： FURUKAWA ELECTRIC CO., LTD.
发明人： Junji Yoshida , Hirokazu Itoh , Satoshi Irino , Yuichiro Irie , Taketsugu Sawamura
IPC分类号： H01S5/00 , H01S5/32 , H01S5/227 , H01S3/067 , H01S5/34 , B82Y20/00 , H01S5/20 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/022 , H01S5/028 , H01S5/10 , H01S5/14 , H01S5/22 , H01S5/343 , H01S3/04 , H01S5/024
CPC分类号： H01S5/3216 , B82Y20/00 , H01S3/04 , H01S3/0675 , H01S3/06754 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/02284 , H01S5/02288 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/1064 , H01S5/146 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/2222 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

5. 发明授权

US09564737B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US09564737B2
公开(公告)日：2017-02-07
申请号：US14887558
申请日：2015-10-20
申请人： Mitsubishi Electric Corporation
发明人： Go Sakaino
IPC分类号： H01S5/227 , H01S5/026 , H01S5/12 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/343
CPC分类号： H01S5/2275 , H01S5/026 , H01S5/12 , H01S5/2222 , H01S5/2224 , H01S5/3054 , H01S5/3211 , H01S5/34306 , H01S5/34366 , H01S2301/17
摘要： An upper cladding layer includes a first low carrier concentration layer having a lower carrier concentration than the p-type cladding layer and a first Fe-doped semiconductor layer formed on the first low carrier concentration layer. The leakage current suppression layer includes a second Fe-doped semiconductor layer disposed on a side of the p-type semiconductor layer. The first low carrier concentration layer has a side wall part that is in contact with a side face of the p-type cladding layer. The first Fe-doped semiconductor layer is disposed on a side of the p-type cladding layer via the side wall part of the first low carrier concentration layer and is not in contact with the p-type cladding layer.
摘要翻译：上包层包括具有比p型包覆层低的载流子浓度的第一低载流子浓度层和形成在第一低载流子浓度层上的第一Fe掺杂半导体层。泄漏电流抑制层包括设置在p型半导体层一侧的第二掺Fe半导体层。第一低载流子浓度层具有与p型覆层的侧面接触的侧壁部。第一Fe掺杂半导体层经由第一低载流子浓度层的侧壁部配置在p型覆层的一侧，并且不与p型覆层接触。

6. 发明申请

US20160329684A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20160329684A1
公开(公告)日：2016-11-10
申请号：US15070669
申请日：2016-03-15
申请人： Mitsubishi Electric Corporation
发明人： Hitoshi SAKUMA
IPC分类号： H01S5/227 , H01S5/02
CPC分类号： H01S5/2275 , H01S5/0201 , H01S5/2222 , H01S5/323 , H01S2301/176
摘要： A method of manufacturing a semiconductor device, includes a step of forming, on a semiconductor substrate, a mesa stripe including an active layer, and a semiconductor layer covering the mesa stripe, a masking step of forming, on the semiconductor layer, a mask pattern through which the semiconductor layer is exposed on opposite sides of the mesa stripe, an isotropic etching step of performing isotropic etching on the semiconductor layer exposed through the mask pattern so that concaves having a circular-arc sectional shape are formed in the semiconductor layer, and an anisotropic etching step of performing anisotropic etching on the semiconductor layer through the mask pattern after the isotropic etching step so that etching progresses to the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成包括有源层的台面条和覆盖台面条的半导体层的步骤，在半导体层上形成掩模图案的掩模步骤半导体层通过其暴露在台面条的相对侧上，各向同性蚀刻步骤对通过掩模图案曝光的半导体层进行各向同性蚀刻，使得在半导体层中形成具有圆弧截面形状的凹部，以及各向异性蚀刻步骤，在各向同性蚀刻步骤之后通过掩模图案在半导体层上进行各向异性蚀刻，以使蚀刻进行到半导体衬底。

7. 发明授权

US09246307B1 Thermal compensation for burst-mode laser wavelength drift 有权
标题翻译：突发模式激光波长漂移的热补偿
公开(公告)号：US09246307B1
公开(公告)日：2016-01-26
申请号：US14509662
申请日：2014-10-08
申请人： Futurewei Technologies, Inc.
发明人： Xuejin Yan , Jianmin Gong , Hongbing Lei , Jianhe Gao
IPC分类号： H01S3/04 , H01S5/06 , H01S5/026 , H01S5/12 , H01S5/323
CPC分类号： H01S5/0612 , H01S5/024 , H01S5/0261 , H01S5/0425 , H01S5/06213 , H01S5/06216 , H01S5/068 , H01S5/12 , H01S5/22 , H01S5/2222 , H01S5/223 , H01S5/227 , H01S5/323 , H01S2301/176
摘要： An apparatus comprising a burst-mode laser comprising an active layer and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer based on timing of the burst period.
摘要翻译：一种包括突发模式激光器的装置，包括有源层并且被配置为在突发周期期间发射光信号，其中突发模式激光器的温度变化导致光信号在波长上移位，并且加热器热耦合到有源层，并且被配置为基于突发周期的定时，在突发周期期间通过向有源层施加热来减少光信号的波长偏移。

8. 发明授权

US09184566B2 Method for manufacturing semiconductor laser element 有权
标题翻译：制造半导体激光元件的方法
公开(公告)号：US09184566B2
公开(公告)日：2015-11-10
申请号：US14530873
申请日：2014-11-03
申请人： Mitsubishi Electric Corporation
发明人： Kazumasa Kishimoto
IPC分类号： H01L21/28 , H01S5/227 , H01S5/02 , H01S5/22 , H01S5/20
CPC分类号： H01S5/2275 , H01S5/0207 , H01S5/2086 , H01S5/209 , H01S5/2222
摘要： A method for manufacturing a semiconductor laser element includes forming an etching end point detection layer on part of a substrate, forming an substrate exposed portion and forming a lower cladding layer, an active layer, and an upper cladding layer on the etching end point detection layer and on the exposed portion, forming an insulating film pattern at a distance corresponding to a clearance region, from directly above a boundary between the substrate exposed portion and the etching end point detection layer, etching the upper clad layer, the active layer, and the lower cladding layer using the insulating film pattern as a mask and stopping etching at a time when the etching end point detection layer is exposed or after a predetermined time duration after the time.
摘要翻译：一种半导体激光元件的制造方法，在基板的一部分上形成刻蚀终点检测层，在蚀刻终点检测层上形成基板露出部，形成下包层，有源层和上包覆层并且在暴露部分上形成距离对应于间隙区域的距离处的绝缘膜图案，从衬底暴露部分和蚀刻终点检测层之间的边界的正上方蚀刻上覆盖层，有源层和使用绝缘膜图案作为掩模的下包层，并且在蚀刻终点检测层暴露时或在时间之后的预定持续时间之后停止蚀刻。

9. 发明授权

US09153942B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09153942B2
公开(公告)日：2015-10-06
申请号：US14247309
申请日：2014-04-08
申请人： Mitsubishi Electric Corporation
发明人： Daisuke Tsunami , Hiroyuki Kawahara , Takashi Nagira
IPC分类号： H01L23/52 , H01S5/343 , H01S5/042 , H01S5/026 , H01S5/10
CPC分类号： H01S5/34313 , G02B6/122 , H01S5/026 , H01S5/0265 , H01S5/0421 , H01S5/1007 , H01S5/101 , H01S5/1014 , H01S5/1028 , H01S5/2086 , H01S5/2201 , H01S5/2222 , H01S5/2275 , H01S5/3202 , H01S5/34306
摘要： A method of manufacturing a semiconductor device, includes forming a laser section on a portion of a substrate, the laser section including an active layer, an upper semiconductor layer on the active layer, and a mask on the upper semiconductor layer; forming a compound semiconductor layer of an indium-containing material in contact with a side of the laser section, the compound semiconductor layer having a projection immediately adjacent the laser section; and wet etching and removing the projection with an etchant containing hydrobromic acid and acetic acid, planarizing the compound semiconductor layer, and producing a (111)A surface in the upper semiconductor layer, under the mask.
摘要翻译：一种制造半导体器件的方法，包括在衬底的一部分上形成激光器部分，激光器部分包括有源层，有源层上的上半导体层和上半导体层上的掩模; 形成与所述激光部分的一侧接触的含铟材料的化合物半导体层，所述化合物半导体层具有紧邻所述激光部分的突起; 并用含有氢溴酸和乙酸的蚀刻剂湿式蚀刻和去除突起，平坦化化合物半导体层，并在掩模下面在上半导体层中制备（111）A表面。

10. 发明申请

US20150180198A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：制造半导体激光元件的方法
公开(公告)号：US20150180198A1
公开(公告)日：2015-06-25
申请号：US14530873
申请日：2014-11-03
申请人： Mitsubishi Electric Corporation
发明人： Kazumasa Kishimoto
IPC分类号： H01S5/00 , H01S5/22 , H01S5/30
CPC分类号： H01S5/2275 , H01S5/0207 , H01S5/2086 , H01S5/209 , H01S5/2222
摘要： A method for manufacturing a semiconductor laser element includes forming an etching end point detection layer on part of a substrate, forming an substrate exposed portion and forming a lower cladding layer, an active layer, and an upper cladding layer on the etching end point detection layer and on the exposed portion, forming an insulating film pattern at a distance corresponding to a clearance region, from directly above a boundary between the substrate exposed portion and the etching end point detection layer, etching the upper clad layer, the active layer, and the lower cladding layer using the insulating film pattern as a mask and stopping etching at a time when the etching end point detection layer is exposed or after a predetermined time duration after the time.
摘要翻译：一种半导体激光元件的制造方法，在基板的一部分上形成刻蚀终点检测层，在蚀刻终点检测层上形成基板露出部，形成下包层，有源层和上包覆层并且在暴露部分上形成距离对应于间隙区域的距离处的绝缘膜图案，从衬底暴露部分和蚀刻终点检测层之间的边界的正上方蚀刻上覆盖层，有源层和使用绝缘膜图案作为掩模的下包层，并且在蚀刻终点检测层暴露时或在时间之后的预定持续时间之后停止蚀刻。

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