专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100019255A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100019255A1
公开(公告)日：2010-01-28
申请号：US12311916
申请日：2008-05-20
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/145 , H01S5/2201 , H01S5/2222 , H01S5/2223 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3077 , H01S5/3211 , H01S5/3432
摘要： There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion (20) composed of a first compound semiconductor layer (abbreviated as a layer hereinafter) (21) having a first conductivity type, an active layer (23), and a second layer (22) having a second conductivity type, and (B) a current-blocking layer (40) in contact with the side of the light-emitting portion and composed of a third layer (43) having the first conductivity type and a fourth layer (44) having the second conductivity type, wherein the impurity for imparting the first conductivity type to the first layer (21) includes an impurity in the first layer (21) at a substitution site which is uncompetitive with a substitution site of the impurity in the second layer (22), for imparting the second conductivity type to the second layer (22), and the impurity for imparting the first conductivity type to the third layer (43) includes an impurity in the third layer (43) at a substitution site which is competitive with a substitution site of the impurity in the fourth layer (44), for imparting the second conductivity type to the fourth layer (44).
摘要翻译：提供一种半导体发光器件，其能够进一步减小电流阻挡层中的漏电流，并且包括（A）由第一化合物半导体层（简称为层）构成的发光部（20）（21），具有第一导电类型的有源层（23）和具有第二导电类型的第二层（22），和（B）与所述第二导电类型的侧面接触的电流阻挡层（40）发光部分，并且由具有第一导电类型的第三层（43）和具有第二导电类型的第四层（44）组成，其中用于赋予第一层（21）的第一导电类型的杂质包括杂质在与第二层（22）中的杂质的取代部位不具竞争力的取代位置处的第一层（21）中，用于将第二导电类型赋予第二层（22），并且用于赋予第一层导电类型到th 第三层（43）在与第四层（44）中的杂质的取代位置竞争的取代位置处包含在第三层（43）中的杂质，用于将第二导电类型赋予第四层（44））。

2. 发明申请

US20120009711A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER 审中-公开
标题翻译：半导体发光器件，其制造方法和形成下层的方法
公开(公告)号：US20120009711A1
公开(公告)日：2012-01-12
申请号：US13238590
申请日：2011-09-21
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L33/20 , H01L33/24 , H01S5/0207 , H01S5/2201 , H01S5/2222 , H01S5/2226 , H01S5/2227 , H01S5/227 , H01S5/3203 , H01S2304/04
摘要： A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
摘要翻译：一种制造半导体发光器件的方法，包括：（A）构造成在具有{100}面作为主表面的基底的主表面上形成的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并通过外延生长形成在衬底的主表面上，下层沿平行于衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

3. 发明授权

US08058660B2 Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer 失效
标题翻译：半导体发光器件及其制造方法以及底层形成方法
公开(公告)号：US08058660B2
公开(公告)日：2011-11-15
申请号：US12208776
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/24 , H01S5/0207 , H01S5/2201 , H01S5/2222 , H01S5/2226 , H01S5/2227 , H01S5/227 , H01S5/3203 , H01S2304/04
摘要： Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
摘要翻译：本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并通过外延生长形成在衬底的主表面上，下层沿平行于衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

4. 发明授权

US07915625B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07915625B2
公开(公告)日：2011-03-29
申请号：US12208855
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/16 , H01S5/1064 , H01S5/2201 , H01S5/221 , H01S5/2222 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3432
摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.
摘要翻译：本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成，掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与第三化合物半导体层中的杂质的取代位置。

5. 发明申请

US20090072253A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER 失效
标题翻译：半导体发光器件，其制造方法和形成下层的方法
公开(公告)号：US20090072253A1
公开(公告)日：2009-03-19
申请号：US12208776
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/24 , H01S5/0207 , H01S5/2201 , H01S5/2222 , H01S5/2226 , H01S5/2227 , H01S5/227 , H01S5/3203 , H01S2304/04
摘要： Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
摘要翻译：本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并且通过外延生长形成在衬底的主表面上，下层沿平行于衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

6. 发明授权

US08320421B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08320421B2
公开(公告)日：2012-11-27
申请号：US12311916
申请日：2008-05-20
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/145 , H01S5/2201 , H01S5/2222 , H01S5/2223 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3077 , H01S5/3211 , H01S5/3432
摘要： A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.
摘要翻译：一种半导体发光器件，被配置为减小电流阻挡层中的漏电流，并且包括由具有第一导电类型的第一化合物半导体层，具有第二导电性的有源层和第二层构成的发光部以及与发光部分侧接触并由具有第一导电类型的第三层和具有第二导电类型的第四层构成的电流阻挡层。

7. 发明申请

US20090072266A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20090072266A1
公开(公告)日：2009-03-19
申请号：US12208855
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L29/24
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/16 , H01S5/1064 , H01S5/2201 , H01S5/221 , H01S5/2222 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3432
摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.
摘要翻译：本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成，掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与第三化合物半导体层中的杂质的取代位置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式