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1. 发明申请

US20140339913A1 WIRELESS POWER FEEDING SYSTEM AND WIRELESS POWER FEEDING METHOD 有权
标题翻译：无线电源馈电系统和无线电源馈电方法
公开(公告)号：US20140339913A1
公开(公告)日：2014-11-20
申请号：US14345602
申请日：2012-05-25
申请人： Masayoshi Tsuji , Wataru Hattori , Masahiro Tanomura , Shuhei Yoshida
发明人： Masayoshi Tsuji , Wataru Hattori , Masahiro Tanomura , Shuhei Yoshida
IPC分类号： H02J17/00 , B60L11/18 , H02J7/02 , H01F38/14 , H02J5/00
CPC分类号： H02J50/12 , B60L11/182 , B60M7/00 , H01F38/14 , H02J5/005 , H02J7/025 , H02J17/00 , H02J50/05 , H02J50/50
摘要： A wireless power feeding system capable of long distance and highly efficient space transmission of power is provided. A wireless power feeding system includes a power transmitter, a power receiver, and a power receiving body. The power transmitter generates electromagnetic waves. The power receiver is supplied with power by means of the electromagnetic waves received from the power transmitter using a magnetic field resonance phenomenon. The power receiving body is inserted into an electromagnetic field created by the power transmitter and the power receiver, and receives power by means of the electromagnetic field.
摘要翻译：提供能够实现长距离和高效率的电力空间传输的无线馈电系统。无线馈电系统包括电力发送器，电力接收器和电力接收体。电力变送器产生电磁波。电力接收器借助于使用磁场共振现象从电力发射器接收的电磁波被供电。电力接收体被插入到由电力发送器和电力接收器产生的电磁场中，并且通过电磁场接收电力。

2. 发明授权

US07974328B2 Surface-emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US07974328B2
公开(公告)日：2011-07-05
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激光波长λ0的光程长度（L）为0.9×λ0＆nlE; L＆nlE; 1.1×λ0时，表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

3. 发明授权

US06323507B1 Semiconductor photonic element, method of fabricating the same, and semiconductor photonic device equipped therewith 失效
标题翻译：半导体光子元件及其制造方法以及配备有该半导体光子器件的半导体光子器件
公开(公告)号：US06323507B1
公开(公告)日：2001-11-27
申请号：US09488508
申请日：2000-01-20
申请人： Yoshitaka Yokoyama , Koji Kudo , Masayoshi Tsuji
发明人： Yoshitaka Yokoyama , Koji Kudo , Masayoshi Tsuji
IPC分类号： H01L3300
CPC分类号： H01S5/227 , H01S5/0265 , H01S5/2077 , H01S5/2215 , H01S5/2272 , H01S5/4031 , H01S5/4087
摘要： A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure.
摘要翻译：提供半导体光子元件，其在高温和/或高输出操作条件下实现低阈值电流和令人满意的特性。该元件由（a）半导体衬底构成; （b）形成在所述基板的第一表面上以沿特定方向延伸的台面结构; 所述台面结构包括分别位于所述有源层的顶侧和底侧的有源层和一对p型和n型覆层，形成双异质结; （c）用于收缩形成在台面结构的每一侧的注入电流的电流收缩结构，以从电流收缩结构暴露台面结构的顶部; 所述电流收缩结构包括第一电流阻挡部分和第二电流阻挡部分; 所述第一电流阻挡部分具有延伸到所述台面结构的介电阻流层; 所述介质电流阻挡层与所述台面结构的顶部边缘接触; 所述第二电流阻挡部分具有半导体电流阻挡层; 以及（d）形成为覆盖所述台面结构和所述多层电流收缩结构的半导体掩埋层; 半导体掩埋层与台面结构的顶部接触。

4. 发明授权

US5801872A Semiconductor optical modulation device 失效
标题翻译：半导体光调制装置
公开(公告)号：US5801872A
公开(公告)日：1998-09-01
申请号：US598099
申请日：1996-02-07
申请人： Masayoshi Tsuji
发明人： Masayoshi Tsuji
IPC分类号： G02B6/42 , G02F1/015 , G02F1/017 , G02F1/025 , H01L27/15 , H01L31/00 , H01S5/00 , H01S5/026 , H01L31/107
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/01725 , G02F2001/0153 , G02F2001/0157 , G02F2001/0175
摘要： The invention provides a semiconductor optical modulation device which has low power dissipation, high extinction ratio and high speed response features. An n-type InP clad layer, an n.sup.- -type InAlAs-InAlGaAs composition inclination multiple layer, a p-type InP clad layer and a p.sup.+ -type InGaAs contact layer are layered on an n-type InP substrate. The layers are etched up to an intermediate location of the n-type clad layer to form a rib waveguide, and a positive electrode is formed on an upper portion of the rib waveguide. Further, a negative electrode is formed on the substrate.
摘要翻译：本发明提供了具有低功耗，高消光比和高速响应特性的半导体光调制装置。 n型InP包层，n型InAlAs-InAlGaAs组成倾斜多层，p型InP包层和p +型InGaAs接触层层叠在n型InP衬底上。将这些层蚀刻到n型覆盖层的中间位置以形成肋波导，并且在肋波导的上部形成正电极。此外，在基板上形成负极。

5. 发明授权

US5204539A Avalanche photodiode with hetero-periodical structure 失效
标题翻译：具有异常结构的AVALANCHE光电
公开(公告)号：US5204539A
公开(公告)日：1993-04-20
申请号：US826494
申请日：1992-01-27
申请人： Masayoshi Tsuji , Kikuo Makita
发明人： Masayoshi Tsuji , Kikuo Makita
IPC分类号： H01L31/0352 , H01L31/107
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1075 , Y10S977/76 , Y10S977/761 , Y10S977/815
摘要： An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a multi-quantum barrier layer consisting of alternately provided short-width barrier and well layers. The barrier and well layers include respectively first and second III-group elements which meet the following conditions:E.sub.A E.sub.B +E.sub.gBwhere E.sub.A and E.sub.B are average ionization energies of the first and second III-group elements respectively, and E.sub.gA and E.sub.gB are forbidden band gap energies, respectively.

6. 发明授权

US4877876A Novel indenothiazole derivative and process for preparing the same 失效
标题翻译：新型茚并噻唑衍生物及其制备方法
公开(公告)号：US4877876A
公开(公告)日：1989-10-31
申请号：US107600
申请日：1987-08-31
申请人： Masayoshi Tsuji , Akira Nakagawa , Hisataka Inoue , Terumi Hachiya , Yoshihiro Tanoue , Kouichi Ikesue , Masaru Saita , Takenobu Mizoguchi , Testsuo Aoki , Hironobu Sato , Kanji Nodo
发明人： Masayoshi Tsuji , Akira Nakagawa , Hisataka Inoue , Terumi Hachiya , Yoshihiro Tanoue , Kouichi Ikesue , Masaru Saita , Takenobu Mizoguchi , Testsuo Aoki , Hironobu Sato , Kanji Nodo
IPC分类号： A61K31/425 , A61K31/428 , A61K31/44 , A61K31/535 , A61K31/54 , A61P1/04 , C07D277/60 , C07D295/04 , C07D417/12
CPC分类号： C07D277/60 , C07D417/12
摘要： This invention provides an indenothiazole derivative and a process for manufacturing the same. The said indenothiazole derivative is represented by the following formula: ##STR1## wherein X and Y are identical with, or different from, each other and are each a hydrogen atom, halogen atom, low alkyl group or low alkoxy group; n is an integer of from 0 to 4; R.sub.1 is a hydrogen atom, low alkyl group, unsubstituted or substituted phenyl group; R.sub.2 is a low alkyl group, cycloalkyl group, low alkoxyl group, unsubstituted or substituted phenoxy group, unsubstituted or substituted phenyl group, alkenyl group, heterocyclic group or cycloamino group; R.sub.3 is a hydrogen atom, low alkyl group or acyl group; and R.sub.2 and R.sub.3 may be combined to form a cycloamino group. Further, this invention also provides a tautomer of the compound represented by the above formula (Ia), wherein all the symbols are as defined above except that R.sub.3 is limited to a hydrogen atom.
摘要翻译： PCT No.PCT / JP87 / 00021 Sec。 371日期1987年8月31日 102（e）1987年8月31日PCT PCT 1987年1月14日PCT公布。公开号WO87 / 04434 日本1987年7月30日。本发明提供了茚并噻唑衍生物及其制造方法。所述茚并噻唑衍生物由下式表示：其中X和Y彼此相同或不同，并且各自为氢原子，卤素原子，低级烷基或低级烷氧基; n为0〜4的整数; R1是氢原子，低级烷基，未取代或取代的苯基; R2是低级烷基，环烷基，低级烷氧基，未取代或取代的苯氧基，未取代或取代的苯基，烯基，杂环基或环氨基; R3是氢原子，低级烷基或酰基; 并且可以将R 2和R 3结合形成环氨基。此外，本发明还提供由上述式（Ia）表示的化合物的互变异构体，其中所有符号如上所定义，只是R3限于氢原子。

7. 发明授权

US5539221A Staircase avalanche photodiode 失效
标题翻译：楼梯雪崩光电二极管
公开(公告)号：US5539221A
公开(公告)日：1996-07-23
申请号：US224110
申请日：1994-04-07
申请人： Masayoshi Tsuji , Kikuo Makita
发明人： Masayoshi Tsuji , Kikuo Makita
IPC分类号： H01L31/107 , H01L31/0328 , H01L31/072 , H01L31/109
CPC分类号： H01L31/1075
摘要： An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa.sub.x Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic. Another photodiode with separate photoabsorption and multiplication regions is provided with an electric-field relaxation layer whose bandgap is wider than that of the photoabsorption and has a triple structure with a highly-doped layer sandwiched between lightly-doped layers. This photodiode incorporates in detail on an n-type InP substrate, an avalanche multiplication layer 13 of a periodic multilayer structure graded in composition from n.sup.- -InAlAs to InGa.sub.x Al.sub.(1-x) As, a p.sup.- -InGaAs photoabsorption layer 17, and an InP electric-field relaxation triple layer 16 consisting of n.sup.-, p.sup.+, and p.sup.- layers between the avalanche multiplication layer 13 and the photoabsorption layer 17.
摘要翻译：提供了一种雪崩光电二极管，其由具有从InAlAs至InGaxAl（1-x）As（x> 0.1）组成的周期性多层结构的阶梯APD作为乘法层，以改善暗电流特性。具有分离的光吸收和倍增区域的另一个光电二极管设置有电场弛豫层，其带隙比光吸收宽，并且具有夹在轻掺杂层之间的高掺杂层的三重结构。该光电二极管详细结合在n型InP衬底上，从n-InAlAs至InGaxAl（1-x）As，p-InGaAs光吸收层17的组成中分级的周期性多层结构的雪崩倍增层13和在雪崩倍增层13和光吸收层17之间由n，p +和p-层构成的InP电场弛豫三层16。

8. 发明授权

US07881358B2 Surface emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US07881358B2
公开(公告)日：2011-02-01
申请号：US12518529
申请日：2007-12-18
申请人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/3095
摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ
摘要翻译：表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。此外，光谐振器单元分别与第一层和第二层接触。谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5λ

9. 发明申请

US20090080488A1 SURFACE EMITTING LASER 审中-公开
标题翻译：表面发射激光
公开(公告)号：US20090080488A1
公开(公告)日：2009-03-26
申请号：US12237048
申请日：2008-09-24
申请人： Hiroshi HATAKEYAMA , Naofumi SUZUKI , Kenichiro YASHIKI , Takeshi AKAGAWA , Takayoshi ANAN , Masayoshi TSUJI , Kimiyoshi FUKATSU
发明人： Hiroshi HATAKEYAMA , Naofumi SUZUKI , Kenichiro YASHIKI , Takeshi AKAGAWA , Takayoshi ANAN , Masayoshi TSUJI , Kimiyoshi FUKATSU
IPC分类号： H01S5/187 , H01S5/18
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/06226 , H01S5/105 , H01S5/18308 , H01S5/18327 , H01S5/18358 , H01S5/3095 , H01S5/34306
摘要： A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode.
摘要翻译：一种表面发射激光器，包括半导体衬底，半导体衬底，形成在半导体衬底上的第一反射器，形成在第一反射器上的有源层，形成在有源层的一部分上方的隧道结层，覆盖所述隧道结层，在所述隧道结层上方的区域中形成在所述半导体间隔层上的第二反射器，形成在所述半导体间隔层上的所述第二反射器的周围的第一电极，以及电连接到所述第二反射层的下层有源层，其中在隧道结层的正上方的区域中的半导体间隔层的层厚度比第一电极正下方的区域中的半导体间隔层的层厚度薄。

10. 发明授权

US06350998B1 Ultraspeed low-voltage drive avalanche multiplication type semiconductor photodetector 失效
标题翻译：超低压驱动雪崩倍半型光电探测器
公开(公告)号：US06350998B1
公开(公告)日：2002-02-26
申请号：US09335601
申请日：1999-06-18
申请人： Masayoshi Tsuji
发明人： Masayoshi Tsuji
IPC分类号： H01L31107
CPC分类号： H01L31/03046 , H01L31/1075 , Y02E10/544
摘要： In an avalanche photodiode having a separated electron injection type light absorbing layer/multiplication layer structure, the multiplication layer comprises In(1−x−y)AlxGayAs with the composition thereof being graded from InAlAs on the light absorbing layer side to InGaAs and preferably has a thickness of not more than 0.1 &mgr;m. By virtue of the above construction, very low noise characteristics and ultraspeed characteristics can be attained in photodetectors at 1 &mgr;m wavelength for long distance optional communications.
摘要翻译：在具有分离的电子注入型光吸收层/倍增层结构的雪崩光电二极管中，乘法层包括In（1-xy）Al x Ga y As，其组成从光吸收层侧的InAlAs分级为InGaAs，优选具有厚度不超过0.1毫米。通过上述结构，可以在1mum波长的光电探测器中获得非常低的噪声特性和超速特性，用于长距离可选通信。

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