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51. 发明授权

US06847063B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06847063B2
公开(公告)日：2005-01-25
申请号：US10413306
申请日：2003-04-15
申请人： Teruhito Ohnishi , Koichiro Yuki , Shigeki Sawada , Keiichiro Shimizu , Koichi Hasegawa , Tohru Saitoh , Paul A. Clifton
发明人： Teruhito Ohnishi , Koichiro Yuki , Shigeki Sawada , Keiichiro Shimizu , Koichi Hasegawa , Tohru Saitoh , Paul A. Clifton
IPC分类号： H01L21/331 , H01L29/10 , H01L29/737 , H01L31/0328 , H01L29/00
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/7378
摘要： In a semiconductor device acting as an HBT, an emitter/base laminate portion is provided on a Si epitaxially grown layer in the SiGeC-HBT. The emitter/base laminate portion includes a SiGeC spacer layer, a SiGeC core base layer containing the boron, a Si cap layer, and an emitter layer formed by introducing phosphorous into the Si cap layer. The C content of the SiGeC spacer layer is equal to or lower than that of the SiGeC core base layer.
摘要翻译：在作为HBT的半导体器件中，在SiGeC-HBT中的Si外延生长层上设置发射极/基底层叠部分。发射极/基底层叠部分包括SiGeC间隔层，含有硼的SiGeC芯基底层，Si覆盖层和通过将磷引入Si覆盖层而形成的发射极层。 SiGeC间隔层的C含量等于或低于SiGeC芯基层的C含量。

52. 发明授权

US06762106B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06762106B2
公开(公告)日：2004-07-13
申请号：US10326059
申请日：2002-12-23
申请人： Shigetaka Aoki , Tohru Saitoh , Katsuya Nozawa
发明人： Shigetaka Aoki , Tohru Saitoh , Katsuya Nozawa
IPC分类号： H01L21331
CPC分类号： H01L29/7378 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L29/1004 , H01L29/66242 , H01L29/7371
摘要： An Si/SiGe layer including an Si buffer layer, an SiGe spacer layer, a graded SiGe layer and an Si cap layer is epitaxially grown in a region corresponding to a collector opening while a polycrystalline layer is deposited on the upper surface of a nitride film, and side surfaces of an oxide film and the nitride film. In this case, the Si buffer layer is formed first and then other layers such as the SiGe spacer layer are formed, thereby ensuring non-selective epitaxial growth. Then, a polycrystalline layer is deposited over the nitride film.
摘要翻译：包含Si缓冲层，SiGe间隔层，渐变SiGe层和Si覆盖层的Si / SiGe层在对应于集电极开口的区域中外延生长，而多晶层沉积在氮化物膜的上表面上，以及氧化膜和氮化物膜的侧表面。在这种情况下，首先形成Si缓冲层，然后形成诸如SiGe间隔层的其它层，从而确保非选择性外延生长。然后，在氮化物膜上沉积多晶层。

53. 发明授权

US06713790B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06713790B2
公开(公告)日：2004-03-30
申请号：US10212799
申请日：2002-08-07
申请人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
发明人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
IPC分类号： H01L31072
CPC分类号： H01L29/66242 , H01L21/763 , H01L21/8249 , H01L27/0623 , H01L29/7378
摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.
摘要翻译：在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

54. 发明授权

US06537369B1 SiGeC semiconductor crystal and production method thereof 有权
标题翻译： SiGeC半导体晶体及其制造方法
公开(公告)号：US06537369B1
公开(公告)日：2003-03-25
申请号：US09979881
申请日：2001-11-27
申请人： Tohru Saitoh , Yoshihiko Kanzawa , Katsuya Nozawa , Minoru Kubo
发明人： Tohru Saitoh , Yoshihiko Kanzawa , Katsuya Nozawa , Minoru Kubo
IPC分类号： C30B2302
CPC分类号： H01L29/161 , C30B25/02 , C30B29/52 , H01L21/02447 , H01L21/0245 , H01L21/02507 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , Y10T428/12674 , Y10T428/265
摘要： A B-doped Si1−x−yGexCy layer 102 (where 0
摘要翻译：使用UHV-CVD工艺在Si衬底101上外延生长B掺杂的Si1-x-yGexCy层102（其中0

55. 发明授权

US06277657B1 Apparatus for fabricating semiconductor device and fabrication method therefor 失效
标题翻译：用于制造半导体器件的装置及其制造方法
公开(公告)号：US06277657B1
公开(公告)日：2001-08-21
申请号：US09530926
申请日：2000-05-08
申请人： Katsuya Nozawa , Minoru Kubo , Tohru Saitoh , Takeshi Takagi
发明人： Katsuya Nozawa , Minoru Kubo , Tohru Saitoh , Takeshi Takagi
IPC分类号： H01L2100
CPC分类号： C30B29/06 , C23C16/481 , C23C16/52 , C30B25/14 , C30B25/165 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si2H6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating &PSgr;, &Dgr;. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.
摘要翻译：晶体生长装置包括真空容器，加热灯，用于控制加热灯的灯控制器，气体入口端口，用于调节气体流量的流量调节器，用于测量基板温度的高温计，以及用于向真空容器供给Si 2 H 6气体等的气体供给单元。用于椭圆测量的装置包括：光源，偏振器，调制器，分析器，分光计/检测器单元和用于计算＆amp; EDG的分析控制单元。在从基板上除去化学氧化物膜的同时，原位椭圆测量可以区分衬底的表面被氧化膜覆盖的相1和衬底的表面部分露出的相2 使得适合于各个相的气体供应被执行和停止。

56. 发明授权

US6140412A Waterproofing agent for ink jet printing paper 失效
标题翻译：喷墨打印纸用防水剂
公开(公告)号：US6140412A
公开(公告)日：2000-10-31
申请号：US287041
申请日：1999-04-06
申请人： Tohru Saitoh , Mitsuru Sasaki
发明人： Tohru Saitoh , Mitsuru Sasaki
IPC分类号： C08G18/08 , C08G18/10 , D21H17/57 , D21H21/16 , C08J3/00 , C08K3/20 , C08L75/00 , D21H11/00 , D21H13/00
CPC分类号： D21H21/16 , C08G18/0814 , C08G18/10 , D21H17/57
摘要： A waterproofing agent for ink jet printing paper comprising an aqueous cationic polyurethane resin solution prepared by dispersing or dissolving in water one or more types of cationic polyurethane resins obtained by neutralizing with acid or quaternizing with a quaternizing agent part or all of the tertiary amino groups of a polyurethane molecule obtained by isocyanate polyaddition reaction of a polyol with at least 2 active hydrogen atoms which can react with isocyanate groups and with a weight average molecular weight of 300-5000, a diol, triol, diamine or triamine compound with a tertiary amino group and a weight average molecular weight of less than 300, and an organic isocyanate with at least 2 isocyanate groups.
摘要翻译：一种用于喷墨打印纸的防水剂，其包含通过将水分散或溶解而制备的阳离子聚氨酯树脂水溶液，所述阳离子聚氨酯树脂溶液通过用酸中和或季铵化季铵化而得到的一种或多种阳离子聚氨酯树脂部分或全部的叔氨基通过多元醇与至少2个可与异氰酸酯基反应并且重均分子量为300-5000的活性氢原子的异氰酸酯加成反应获得的聚氨酯分子，具有叔氨基的二醇，三醇，二胺或三胺化合物重均分子量小于300，有机异氰酸酯具有至少2个异氰酸酯基。

57. 发明授权

US08436355B2 Thin-film transistor, manufacturing method therefor, and electronic device using a thin-film transistor 有权
标题翻译：薄膜晶体管及其制造方法以及使用薄膜晶体管的电子器件
公开(公告)号：US08436355B2
公开(公告)日：2013-05-07
申请号：US12742137
申请日：2008-11-14
申请人： Takaaki Ukeda , Tohru Saitoh , Kazunori Komori , Sadayoshi Hotta
发明人： Takaaki Ukeda , Tohru Saitoh , Kazunori Komori , Sadayoshi Hotta
IPC分类号： H01L33/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66757
摘要： Disclosed is a method that includes: forming a gate electrode on a substrate, then forming an insulation layer so as to completely cover the gate electrode, thereafter forming a semiconductor layer on the insulation layer, and then forming a crystallization-inducing metal layer on the semiconductor layer; removing the part of at least the crystallization-inducing metal layer that is over a channel region of the semiconductor layer; forming source and drain electrodes at a location which is over source and drain regions respectively located at opposite sides with respect to the channel region of the semiconductor layer and is above the crystallization-inducing metal layer; and heating the crystallization-inducing metal layer so as to form a silicide layer of a crystallization-inducing metal.
摘要翻译：公开了一种方法，其包括：在基板上形成栅电极，然后形成绝缘层，以完全覆盖栅电极，然后在绝缘层上形成半导体层，然后在其上形成结晶诱导金属层半导体层; 去除所述半导体层的沟道区域上的至少所述结晶诱导金属层的一部分; 在源极和漏极区域分别位于相对于半导体层的沟道区的相对侧并位于结晶诱导金属层之上的位置处形成源极和漏极; 并加热结晶诱导金属层，以形成结晶诱导金属的硅化物层。

58. 发明授权

US07129168B2 Method of estimating substrate temperature 失效
公开(公告)号：US07129168B2
公开(公告)日：2006-10-31
申请号：US10691500
申请日：2003-10-24
申请人： Katsuya Nozawa , Tohru Saitoh , Teruhito Ohnishi
发明人： Katsuya Nozawa , Tohru Saitoh , Teruhito Ohnishi
IPC分类号： H01L21/44
CPC分类号： G01K11/02 , Y10S438/933
摘要： A method of estimating substrate temperature according to this invention includes the steps of epitaxially growing a Si-containing layer (103) on a SiGe layer (102) formed on a substrate for temperature estimation (101) constituted of a Si substrate under a reaction control condition; finding a relationship between a rate of growth of the Si-containing layer and a substrate temperature of the substrate for temperature estimation; epitaxially growing a Si-containing layer on a substrate for device fabrication as a subject of substrate temperature estimation under a reaction control condition; and estimating a substrate temperature of the substrate for device fabrication based on the rate of growth of the latter Si-containing layer and the relationship between the rate of growth of the former Si-containing layer (103) and the substrate temperature of the substrate for temperature estimation.

59. 发明申请

US20060126701A1 Method of estimating substrate temperature 失效
标题翻译：基板温度估算方法
公开(公告)号：US20060126701A1
公开(公告)日：2006-06-15
申请号：US10691500
申请日：2003-10-24
申请人： Katsuya Nozawa , Tohru Saitoh , Teruhito Ohnishi
发明人： Katsuya Nozawa , Tohru Saitoh , Teruhito Ohnishi
IPC分类号： G01K13/00
CPC分类号： G01K11/02 , Y10S438/933
摘要： A method of estimating substrate temperature according to this invention includes the steps of epitaxially growing a Si-containing layer (103) on a SiGe layer (102) formed on a substrate for temperature estimation (101) constituted of a Si substrate under a reaction control condition; finding a relationship between a rate of growth of the Si-containing layer and a substrate temperature of the substrate for temperature estimation; epitaxially growing a Si-containing layer on a substrate for device fabrication as a subject of substrate temperature estimation under a reaction control condition; and estimating a substrate temperature of the substrate for device fabrication based on the rate of growth of the latter Si-containing layer and the relationship between the rate of growth of the former Si-containing layer (103) and the substrate temperature of the substrate for temperature estimation.
摘要翻译：根据本发明的估计衬底温度的方法包括以下步骤：在反应控制下由Si衬底构成的用于温度估计的衬底上形成的SiGe层（102）上外延生长含Si层（103）条件; 发现含Si层的生长速率与用于温度估计的衬底的衬底温度之间的关系; 在用于器件制造的衬底上外延生长含Si层，作为在反应控制条件下的衬底温度估计的对象; 以及基于后面的含Si层的生长速率和前述含Si层（103）的生长速度与衬底的衬底温度之间的关系，估计用于器件制造的衬底的衬底温度温度估计。

60. 发明授权

US07049198B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07049198B2
公开(公告)日：2006-05-23
申请号：US10377771
申请日：2003-03-04
申请人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
发明人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/1054 , H01L29/165 , H01L29/167
摘要： An S1-yGey layer (where 0
摘要翻译：按照此顺序形成S 1〜Y Ge层（其中0

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