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1. 发明授权

US06800135B2 ZnO/sapphire substrate and method for manufacturing the same 失效
标题翻译： ZnO /蓝宝石衬底及其制造方法
公开(公告)号：US06800135B2
公开(公告)日：2004-10-05
申请号：US10171631
申请日：2002-06-17
申请人： Jun Koike , Hideharu Ieki
发明人： Jun Koike , Hideharu Ieki
IPC分类号： C30B2302
CPC分类号： H03H9/02574 , C30B23/02 , C30B29/16 , Y10S117/902
摘要： A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1 1-2 0) planes of the ZnO epitaxial film are disposed with an interplanar spacing in the range of about 1.623 to 1.627 Å parallel to the (0 1-1 2) planes of the R-plane sapphire substrate.
摘要翻译： ZnO /蓝宝石衬底包括（0-1-1）面平行于其表面的R平面蓝宝石衬底和形成在R平面蓝宝石衬底上的ZnO外延膜。 ZnO外延膜的（1-12-0）面平行于R平面蓝宝石衬底的（0-1-2）面平面布置，其平面间距约为1.623至1.627。

2. 发明授权

US06537369B1 SiGeC semiconductor crystal and production method thereof 有权
标题翻译： SiGeC半导体晶体及其制造方法
公开(公告)号：US06537369B1
公开(公告)日：2003-03-25
申请号：US09979881
申请日：2001-11-27
申请人： Tohru Saitoh , Yoshihiko Kanzawa , Katsuya Nozawa , Minoru Kubo
发明人： Tohru Saitoh , Yoshihiko Kanzawa , Katsuya Nozawa , Minoru Kubo
IPC分类号： C30B2302
CPC分类号： H01L29/161 , C30B25/02 , C30B29/52 , H01L21/02447 , H01L21/0245 , H01L21/02507 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , Y10T428/12674 , Y10T428/265
摘要： A B-doped Si1−x−yGexCy layer 102 (where 0
摘要翻译：使用UHV-CVD工艺在Si衬底101上外延生长B掺杂的Si1-x-yGexCy层102（其中0

3. 发明授权

US06306213B1 Electro-optical device and method for manufacturing the same 失效
标题翻译：电光装置及其制造方法
公开(公告)号：US06306213B1
公开(公告)日：2001-10-23
申请号：US08962600
申请日：1997-10-31
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： C30B2302
CPC分类号： H01L27/124 , G02F1/13452 , G02F1/13454 , G02F2001/136245 , G09G2310/0281 , H01L27/1214 , H01L27/1274 , H01L29/66757 , H01L29/78666 , H01L29/78675
摘要： An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.
摘要翻译：公开了一种电光装置及其制造方法。该装置包括一对基板和电光转换层（例如夹在其间的液晶层，所述一对基板由其上设置有多个栅极布线的第一基板，多个源极（漏极）线以及包括薄膜晶体管的像素矩阵和面向第一基板的第二基板，其中，在已经建立在第一基板上并且连接到用于X方向和Y方向的矩阵布线的外围电路中，仅一部分的所述外围电路由通过用于有源器件的相同工艺制造的薄膜半导体器件构成，并且其余外围电路由半导体芯片构成。根据本发明的液晶显示器件的特征在于，外围电路不是完全制造成薄膜晶体管，而只是那些具有简单的部分 e器件结构，或由少量器件构成的器件，或包含IC不容易商业化的器件，或包含昂贵的集成电路的器件结构，都由薄膜晶体管制造。根据本发明，以提高的生产成本提供电光装置，生产成本降低。

4. 发明授权

US06527858B1 P-type ZnO single crystal and method for producing the same 失效
标题翻译： P型ZnO单晶及其制造方法
公开(公告)号：US06527858B1
公开(公告)日：2003-03-04
申请号：US09806373
申请日：2001-05-07
申请人： Hiroshi Yoshida , Tetsuya Yamamoto
发明人： Hiroshi Yoshida , Tetsuya Yamamoto
IPC分类号： C30B2302
CPC分类号： H01L29/22 , C30B23/002 , C30B23/02 , C30B29/16 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L31/02963 , H01L33/28 , H01S5/327 , Y10T428/12681 , Y10T428/12792
摘要： A p-type ZnO single crystal having a low resistance; and a method for producing the same providing a substrate (2) in a vacuum chamber (1), supplying to the substrate (2) atomic gases of Zn, O, and N (p-type dopant) and Ga (n-type dopant) in a manner wherein the feeds of N and Ga are controlled in such a manner that the ratio of N:Ga in a crystal is 2:1, and thereby growing a p-type ZnO single crystal containing N and Ga.
摘要翻译：具有低电阻的p型ZnO单晶; 以及在真空室（1）中提供基板（2）的方法，其向所述基板（2）供给Zn，O和N（p型掺杂剂）和Ga（n型掺杂剂）的原子气体），其中以这样的方式控制N和Ga的进料，使得晶体中的N：Ga的比例为2:1，从而生长含有N和Ga的p型ZnO单晶。

5. 发明授权

US06270574B1 Method of growing a buffer layer using molecular beam epitaxy 失效
标题翻译：使用分子束外延生长缓冲层的方法
公开(公告)号：US06270574B1
公开(公告)日：2001-08-07
申请号：US09554534
申请日：2000-07-14
申请人： Stewart Edward Hooper
发明人： Stewart Edward Hooper
IPC分类号： C30B2302
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method of growing a Group III-V nitrite buffer layer on a substrate made of a different material by molecular beam epitaxy is provided, which compensates for lattice mismatching between a material of the substrate and a material of a further layer to be grown on the substrate. The method includes the steps of: placing the substrate in a vacuum chamber at a reduced pressure suitable for epitaxial growth and at an elevated temperature; and supplying species to the vacuum chamber to be used in the epitaxial growth including a nitrogen precursor species supplying nitrogen to the substrate to cause epitaxial growth on the substrate of the buffer layer. The elevated temperature is in the range of 300 to 800 ° C., and a supply rate of nitrogen to the substrate is such as to cause epitaxial growth on the substrate of the Group III-V nitride buffer layer of uniform thickness less than 2000 Å at a growth rate in the range of 2 to 10 &mgr;m/hr.
摘要翻译：提供了通过分子束外延在由不同材料制成的衬底上生长III-V族亚硝酸盐缓冲层的方法，其补偿衬底的材料与待生长的另一层的材料之间的晶格失配基质。该方法包括以下步骤：将衬底放置在适于外延生长和升高温度的减压下的真空室中; 以及将物质供应到用于外延生长的真空室中，包括向衬底供应氮气的氮气前体物质，以在缓冲层的衬底上引起外延生长。升高的温度在300至800℃的范围内，并且衬底的氮气供应速率使得在均匀厚度小于2000埃的III-V族氮化物缓冲层的衬底上引起外延生长以2至10mum / hr的范围内的生长速率。

6. 发明授权

US06673478B2 Crystal-growth substrate and a ZnO-containing compound semiconductor device 有权
标题翻译：晶体生长衬底和含ZnO化合物半导体器件
公开(公告)号：US06673478B2
公开(公告)日：2004-01-06
申请号：US10260779
申请日：2002-09-27
申请人： Hiroyuki Kato , Michihiro Sano
发明人： Hiroyuki Kato , Michihiro Sano
IPC分类号： C30B2302
CPC分类号： H01L21/02554 , C30B23/02 , C30B25/18 , C30B29/16 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02516 , H01L21/02609 , Y10T428/265
摘要： In a method of growing a ZnO-containing compound semiconductor single crystal, on a compound single crystal layer of a hexagonal crystal structure having a plurality of (0001) surfaces aligned in a sequence of terraces along a direction of a-axis, a ZnO-containing compound single crystal of a hexagonal crystal structure is grown, having an inclination from the c-axis toward the direction of the a-axis.
摘要翻译：在生长含ZnO化合物半导体单晶的方法中，在具有沿a轴方向的梯田顺序排列的多个（0001）面的六方晶系结构的复合单晶层上，将ZnO- 生长含有六方晶系结构的含氮化合物单晶，具有从c轴向a轴方向的倾斜。

7. 发明授权

US06500258B2 Method of growing a semiconductor layer 失效
标题翻译：生长半导体层的方法
公开(公告)号：US06500258B2
公开(公告)日：2002-12-31
申请号：US09884881
申请日：2001-06-18
申请人： Stewart Edward Hooper , Jonathan Heffernan , Jennifer Mary Barnes , Alistair Henderson Kean
发明人： Stewart Edward Hooper , Jonathan Heffernan , Jennifer Mary Barnes , Alistair Henderson Kean
IPC分类号： C30B2302
CPC分类号： C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： This invention relates to a method of growing a nitride semiconductor layer by molecular beam epitaxy comprising the steps of: a) heating a GaN substrate (S) disposed in a growth chamber (10) to a substrate temperature of at least 850° C.; and b) growing a nitride semiconductor layer on the GaN substrate by molecular beam epitaxy at a substrate temperature of at least 850° C., ammonia gas being supplied to the growth chamber (10) during the growth of the nitride semiconductor layer; wherein the method comprises the further step of commencing the supply ammonia gas to the growth chamber during step (a), before the substrate temperature has reached 800° C.
摘要翻译：本发明涉及通过分子束外延生长氮化物半导体层的方法，包括以下步骤：a）将设置在生长室（10）中的GaN衬底（S）加热至至少850℃的衬底温度; 以及b）在至少850℃的衬底温度下通过分子束外延在GaN衬底上生长氮化物半导体层，在氮化物半导体层的生长期间向生长室（10）供应氨气; 其中所述方法包括在基板温度达到800℃之前，在步骤（a）期间开始向生长室供应氨气的步骤。

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