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1. 发明授权

US06455364B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06455364B1
公开(公告)日：2002-09-24
申请号：US09526686
申请日：2000-03-15
申请人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
发明人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
IPC分类号： H01L218249
CPC分类号： H01L29/66242 , H01L21/763 , H01L21/8249 , H01L27/0623 , H01L29/7378
摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.
摘要翻译：在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

2. 发明授权

US06713790B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06713790B2
公开(公告)日：2004-03-30
申请号：US10212799
申请日：2002-08-07
申请人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
发明人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
IPC分类号： H01L31072
CPC分类号： H01L29/66242 , H01L21/763 , H01L21/8249 , H01L27/0623 , H01L29/7378
摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.
摘要翻译：在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

3. 发明授权

US06273959B1 Method of cleaning semiconductor device 失效
标题翻译：半导体器件清洗方法
公开(公告)号：US06273959B1
公开(公告)日：2001-08-14
申请号：US09011787
申请日：1998-02-24
申请人： Teruhito Oonishi , Ken Idota , Masaaki Niwa , Yoshinao Harada
发明人： Teruhito Oonishi , Ken Idota , Masaaki Niwa , Yoshinao Harada
IPC分类号： C23G102
CPC分类号： H01L21/02052 , C11D1/22 , C11D3/042 , C11D11/0047 , Y10S134/902
摘要： There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz processing vessel and heating to no more than 100° C. A silicon wafer is immersed into the cleaning solution for 10 minutes and then washed by demineralized water for about 7 minutes. The surfaces of foreign particles on the wafer are etched by hydrogen fluoride, and n-dodecylbenzenesulfonic acid combines with the etched surfaces by sulfate ester bonding. The apparent diameter of the foreign particles increases and the repulsive force caused by zeta potential etc. increases, so that the foreign particles are unlikely to adhere to the surface of the silicon wafer permitting the foreign particles to be easily washed away in a water cleaning step.
摘要翻译：公开了一种半导体器件清洁方法，包括放置含有24重量％％硫酸，5重量％％过氧化氢，0.02重量％％氟化氢，0.075重量％％正十二烷基苯磺酸和水加入到石英处理容器中并加热至不超过100℃。将硅晶片浸入清洁溶液中10分钟，然后用软化水洗涤约7分钟。晶片上的异物颗粒的表面被氟化氢蚀刻，正十二烷基苯磺酸通过硫酸酯键合与蚀刻表面结合。外来颗粒的表观直径增加，并且由ζ电位等引起的排斥力增加，使得外来颗粒不可能粘附到硅晶片的表面，从而允许外来颗粒在水清洗步骤中容易地被冲走。

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