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    • 2. 发明授权
    • Method of cleaning semiconductor device
    • 半导体器件清洗方法
    • US06273959B1
    • 2001-08-14
    • US09011787
    • 1998-02-24
    • Teruhito OonishiKen IdotaMasaaki NiwaYoshinao Harada
    • Teruhito OonishiKen IdotaMasaaki NiwaYoshinao Harada
    • C23G102
    • H01L21/02052C11D1/22C11D3/042C11D11/0047Y10S134/902
    • There is disclosed a semiconductor device cleaning method involving placing a cleaning solution containing 24 wt. % sulfuric acid, 5 wt. % hydrogen peroxide, 0.02 wt. % hydrogen fluoride, 0.075 wt. % n-dodecylbenzenesulfonic acid, and water into a quartz processing vessel and heating to no more than 100° C. A silicon wafer is immersed into the cleaning solution for 10 minutes and then washed by demineralized water for about 7 minutes. The surfaces of foreign particles on the wafer are etched by hydrogen fluoride, and n-dodecylbenzenesulfonic acid combines with the etched surfaces by sulfate ester bonding. The apparent diameter of the foreign particles increases and the repulsive force caused by zeta potential etc. increases, so that the foreign particles are unlikely to adhere to the surface of the silicon wafer permitting the foreign particles to be easily washed away in a water cleaning step.
    • 公开了一种半导体器件清洁方法,包括放置含有24重量% %硫酸,5重量% %过氧化氢,0.02重量% %氟化氢,0.075重量% %正十二烷基苯磺酸和水加入到石英处理容器中并加热至不超过100℃。将硅晶片浸入清洁溶液中10分钟,然后用软化水洗涤约7分钟。 晶片上的异物颗粒的表面被氟化氢蚀刻,正十二烷基苯磺酸通过硫酸酯键合与蚀刻表面结合。 外来颗粒的表观直径增加,并且由ζ电位等引起的排斥力增加,使得外来颗粒不可能粘附到硅晶片的表面,从而允许外来颗粒在水清洗步骤中容易地被冲走 。